7137 results about "Organic Silicon Compounds" patented technology

A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40° C. onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.

A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si-O-Si or Si-N-Si groups with organic side groups attached to the backbone.

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

A method is provided for processing a substrate including providing a processing gas comprising hydrogen gas and an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Silicon composite particles are prepared by sintering primary fine particles of silicon, silicon alloy or silicon oxide together with an organosilicon compound. Sintering of the organosilicon compound results in a silicon-base inorganic compound which serves as a binder. Each particle has the structure that silicon or silicon alloy fine particles are dispersed in the silicon-base inorganic compound binder, and voids are present within the particle.

A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm2 and about 3.2 W/cm2. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH3)3SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

Disclosed are supercapacitors having organosilicon electrolytes, high surface area/porous electrodes, and optionally organosilicon separators. Electrodes are formed from high surface area material (such as porous carbon nanotubes or carbon nanofibers), which has been impregnated with the electrolyte. These type devices appear particularly suitable for use in electric and hybrid electric vehicles.

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

The present invention relates to the development of tracer fluids, more generally, that of aqueous liquids, intended to be injected under pressure in an oil reservoir, for example from an injection well up to a production well.

The object of the invention is to propose a new method of study of a solid medium, i.e. an oil reservoir, by diffusion of a liquid (i.e. injection waters) containing tracers, through said solid medium, which is simple to implement and economical and which remedies the drawbacks of the known tracers for injection waters of oil reservoirs.

This method essentially consisting of injecting, in this solid medium, an injection liquid comprising a nanoparticle-based tracer having average dimensions comprised between 20 and 200 nm, detectable by means of one or several S signals at dilutions of less than or equal to 10⁻⁷, adapted to form a stable colloidal suspension in a saline medium, at least a portion of which is constituted of a core and a coating provided with an adjustable hydrophilic-lipophilic balance (HLB) and comprising at least one organic and/or organosilicon component; recovering the liquid having diffused; and analyzing this liquid having diffused to measure the quantity of tracer by detection of the signal or signals S.

Methods are provided for depositing a low dielectric constant material. In one aspects, a method is provided for depositing a low dielectric constant material including introducing a processing gas comprising hydrogen and an oxygen-containing organosilicon compound, an oxygen-free organosilicon compound, or combinations thereof, to a substrate surface in a processing chamber and reacting the processing gas at processing conditions to deposit the low dielectric constant material on the substrate surface, wherein the low k dielectric material comprises at least silicon and carbon. The processing gas may further include an inert gas, a meta-stable compound, or combinations thereof. The method may further include treating the low dielectric constant material with a hydrogen containing plasma, annealing the deposited low dielectric constant material, or combinations thereof.

A non-aqueous electrolyte secondary battery negative electrode material is provided wherein a negative electrode active material containing a lithium ion-occluding and releasing material which has been treated with an organosilicon base surface treating agent is surface coated with a conductive coating. Using the negative electrode material, a lithium ion secondary battery having a high capacity and improved cycle performance is obtainable.

Hot-filament chemical vapor deposition has been used to deposit copolymer thin films consisting of fluorocarbon and siloxane groups. The presence of covalent bonds between the fluorocarbon and organosilicon moieties in the thin film has been confirmed by Infrared, X-ray Photoelectron (XPS) and solid-state ²⁹Si, ¹⁹F, and ¹³C Nuclear Magnetic Resonance (NMR) spectroscopy. The film structure consists of chains with linear and cyclic siloxane groups and CF₂ groups as repeat units.

The invention discloses a super hydrophobic anti-icing coating and a preparation method thereof, and is realized by preparing a fluorine contained acrylic resin and combining the fluorine contained acrylic resin with organosilicon resin and nano particles. In a scheme of the invention, the fluorine contained acrylic resin has small surface energy and strong hydrophobicity. The organosilicon resin utilizes effect of -CH3 on a surface thereof and small polarity to substantially reduce contact angle hysteresis. The fluorine contained acrylic resin can crosslink and solidify with the nano particles and active groups in the organosilicon resin to form a composite network. The invention can overcome defects of complex technology, high costs and unsuitability for large scale usage of an ordinary method for preparing a super hydrophobic coating; and the prepared coating can realize super hydrophobic anti-icing effect through a regular spraying method.

An object of the invention is to provide a polymerizable liquid-crystal composition for obtaining a liquid-crystal film having good adhesiveness to supporting substrates. A polymerizable liquid-crystal layer of controlled alignment can be formed from the polymerizable liquid-crystal composition, and when the polymerizable liquid-crystal composition is polymerized, it gives a liquid-crystal film.

The polymerizable liquid-crystal composition of the invention contains a polymerizable liquid-crystal compound represented by Formula (1) and a organosilicon compound having a primary amino group.

wherein W is hydrogen, alkyl, alkenyl, halogen, —CN or -(G-Sp)_r-P; P is a polymerizable group; Sp is alkylene; G is a bonding group; and MG is a mesogenic group represented by Formula (2):

wherein T¹ and T² are ringed group; G¹ is a bonding group; and f is an integer of 0 to 4. The symbols in these formulae are defined in detail in claim 2.

A potting composition comprising (A) an organopolysiloxane having a vinyl group at an end of its molecular chain, (B) an organohydrogenpolysiloxane, (C) a platinum group metal catalyst, and optionally, (D) an organosilicon compound having a silicon atom-bonded alkoxy group. The cured product of the composition has a refractive index of 1.41-1.56 at 25° C. and 589 nm (sodium D line). The composition is suited for the embedment and protection of light-emitting semiconductor members. A package in which a light-emitting semiconductor member is embedded and protected with the potting composition undergoes little discoloration and maintains a high emission efficiency in heating tests, thus offering a light-emitting semiconductor device featuring a long life and energy saving.

A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH₄) derivatives having the molecular formula SiRR¹R²R³, disiloxane derivatives having the molecular formula R⁴R⁵R⁶—Si—O—Si—R⁷R⁸R⁹, and trisiloxane derivatives having the molecular formula R¹⁰R¹¹R¹²—Si—O—Si—R¹³R¹⁴—O—Si—R¹⁵R¹⁶R¹⁷ where R and R^1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.

A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

An antireflection film comprising a transparent substrate film having thereon a hard coat, a high refractive index layer and a low refractive index layer, wherein: (i) the high refractive index layer is formed by applying a coating solution containing the following (a) to (c); (ii) the low refractive index layer is formed by applying a coating solution containing the following (d) and (e); (iii) the antireflection film is heat treated, wherein (a) metal oxide particles having an average primary particle diameter of 10 to 200 nm; (b) a metal compound; (c) an ionizing radiation curable resin; (d) an organosilicon compound having a prescribed structure, a hydrolyzed compound of the organosilicon compound, a decomposed compound of the organosilicon compound or a polycondensed compound of the organosilicon compound; and (e) hollow silica particles each having an outer shell, and a void or a porous portion in the inside.

An antimicrobial substrate is disclosed, having adhered to at least a part of its surface an organosilicon quaternary ammonium salt compound, such as 3-(trimethoxysilyl)propyl-dimethyloctadecyl ammonium chloride for example, and having a cationic, preferably hydrophilic, polymer, such as a polyethylene imine or polyhexamethylene biguanide hydrochloride. A method is further disclosed for producing the substrate, as well as a composition for use in the production of the substrate.