Plasma processes for depositing low dielectric constant films

Abstract

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2-SiH-O-SiH-(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

Description

[0001] This application is a continuation-in-part of co-pending U.S. patent application Ser. No. 09 / 021,788, which was filed on Feb. 11, 1998, a continuation in part of co-pending U.S. patent application Ser. No. 09 / 114,682, which was filed on Jul. 13, 1998, a continuation-in-part of co-pending U.S. patent application Ser. No. 09 / 162,915, which was filed on Sep. 29, 1998; and a continuation-in-part of co-pending U.S. patent application Ser. No. 09 / 189,555, which was filed on Nov. 4, 1998.BACKGROUND OF THE DISCLOSURE

[0002] 1. Field of the Invention

[0003] The present invention relates to the fabrication of integrated circuits. More particularly, the invention relates to a process and apparatus for depositing dielectric layers on a substrate.

[0004] 2. Background of the Invention

[0005] One of the primary steps in the fabrication of modem semiconductor devices is the formation of metal and dielectric films on a substrate by chemical reaction of gases. Such deposition processes are referr...

Examples

example

[0106] The following example and demonstrates deposition of an oxidized organosilane or organosiloxane film having excellent barrier and adhesion properties. This example was undertaken using a chemical vapor deposition chamber, and in particular, a "CENTURA DxZ" system which includes a solid-state RF matching unit with a two-piece quartz process kit, both fabricated and sold by Applied Materials, Inc., Santa Clara, Calif.

Non-Pulsed RF Power

[0107] An oxidized dimethylsilane film was deposited at a chamber pressure of 3.0 Torr and temperature of 15EC from reactive gases which were flowed into the reactor as follows:

4 Dimethylsilane, (CH.sub.3).sub.2SiH.sub.2, at 55 sccm Nitrous oxide, N.sub.2O, at 300 sccm Helium, He, at 4000 sccm.

[0108] The substrate was positioned 600 mil from the gas distribution showerhead and 20 W of high frequency power (13 MHz) was applied to the showerhead for plasma enhanced deposition of an oxidized dimethylsilane layer. The oxidized dimethylsilane material...

[0001] This application is a continuation-in-part of co-pending U.S. patent application Ser. No. 09 / 021,788, which was filed on Feb. 11, 1998, a continuation in part of co-pending U.S. patent application Ser. No. 09 / 114,682, which was filed on Jul. 13, 1998, a continuation-in-part of co-pending U.S. patent application Ser. No. 09 / 162,915, which was filed on Sep. 29, 1998; and a continuation-in-part of co-pending U.S. patent application Ser. No. 09 / 189,555, which was filed on Nov. 4, 1998.BACKGROUND OF THE DISCLOSURE

[0002] 1. Field of the Invention

[0003] The present invention relates to the fabrication of integrated circuits. More particularly, the invention relates to a process and apparatus for depositing dielectric layers on a substrate.

[0004] 2. Background of the Invention

[0005] One of the primary steps in the fabrication of modem semiconductor devices is the formation of metal and dielectric films on a substrate by chemical reaction of gases. Such deposition processes are referr...

Examples

example

[0106] The following example and demonstrates deposition of an oxidized organosilane or organosiloxane film having excellent barrier and adhesion properties. This example was undertaken using a chemical vapor deposition chamber, and in particular, a "CENTURA DxZ" system which includes a solid-state RF matching unit with a two-piece quartz process kit, both fabricated and sold by Applied Materials, Inc., Santa Clara, Calif.

Non-Pulsed RF Power

[0107] An oxidized dimethylsilane film was deposited at a chamber pressure of 3.0 Torr and temperature of 15EC from reactive gases which were flowed into the reactor as follows:

4 Dimethylsilane, (CH.sub.3).sub.2SiH.sub.2, at 55 sccm Nitrous oxide, N.sub.2O, at 300 sccm Helium, He, at 4000 sccm.

[0108] The substrate was positioned 600 mil from the gas distribution showerhead and 20 W of high frequency power (13 MHz) was applied to the showerhead for plasma enhanced deposition of an oxidized dimethylsilane layer. The oxidized dimethylsilane material...

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