3results about How to "High insulation breakdown voltage" patented technology

Wrapped insulated wires and coils that can increase or make equal insulation breakdown voltage even when the insulation coating thickness is the same, or can increase or make equal insulation breakdown voltage even when the insulation coating thickness is reduced to make the insulated wire diameter smaller. The insulated wire (10) has a conductor (1) and an insulating cover (2) provided on the outer periphery of the conductor (1). The insulating cover (2) is composed of multiple insulating layers (2a, 2b, 2c, 2d, 2e) formed by overlapping and winding 2 to 5 insulating strips (11, 12, 13, 14, 15). In this insulated wire (10), the insulating cover (2) is configured such that: (1) when there are a total of 2 or 3 insulating layers formed by overlapping and winding the insulating strips, the total number of windings of each insulating layer is less than or equal to the total number of integer parts of the number of windings of each insulating layer plus 1; or (2) when there are a total of 4 or 5 insulating layers formed by overlapping and winding the insulating strips, the total number of windings of each insulating layer is less than or equal to the total number of integer parts of the number of windings of each insulating layer plus 2. By configuring it in this way, the above-mentioned problem is solved.

The invention discloses a low-on-resistance high-voltage SOI LDMOS power device and a preparation method thereof.The power device comprises a P-type substrate, a BOX layer, a P-Window buried layer, a first N-type drift region, a second N-type drift region, a first P-pillar buried layer and a second P-pillar buried layer, the P-Window buried layer and the BOX layer are arranged on the upper surface of the P-type substrate in the left-right direction, and the first N-type drift region and the second N-type drift region are arranged on the lower surface of the P-type substrate in the left-right direction. The N-type drift region I and the N-type drift region II are respectively overlapped above the P-Window buried layer and the BOX layer, an oxidation tank is arranged on the left side of the N-type drift region I, polycrystalline silicon grows in the oxidation tank, the P-pillar buried layer I and the P-pillar buried layer II are arranged along the vertical direction and extend rightwards from the left side surface of the N-type drift region I into the N-type drift region II, and the P-pillar buried layer II and the P-pillar buried layer II are arranged along the vertical direction. The length of the first P-pillar buried layer is larger than that of the second P-pillar buried layer, and the doping concentration of the first N-type drift region and the doping concentration of the second N-type drift region are different. According to the device structure, the on resistance is effectively reduced, the breakdown voltage is improved, and the performance of the device is well improved.

The present invention provides a cyclic olefin ring-opening copolymer, which comprises a structural unit derived from a norbornene compound having a heteroelement-containing hydrocarbon group and a structural unit derived from a norbornene compound having a heteroelement-free hydrocarbon group. In the copolymer, the content ratio of the structural unit derived from the norbornene compound having a heteroelement-containing hydrocarbon group is 0.01 mol% or more and 15.00 mol% or less, based on the total structural units of the copolymer being 100 mol%.