42results about How to "Increase insulation thickness" patented technology

On a surface of a glass cloth adhered a mica layer sheet, a mixture of inorganic particles having a thermal conductivity of at least 5 W/mK, a resin, and a solvent is applied to form a layer of the mixture of the inorganic particles, the resin, and the solvent; the layer of the mixture is reduced in thickness using a doctor blade, followed by pressurizing to form a high thermally conducting layer; the mica layer sheet on which the high thermally conducting layer is disposed is cut to obtain a mica insulating tape; and the mica insulation tape is wound around a coil conductor. As a result, an insulated coil that is excellent in the voltage endurance characteristics and has a high thermal conductivity is manufactured.

An imaging device for sensing an image of an object includes a negative feedback amplifier, a substrate, a sense electrode, a couple electrode and an insulation protection layer. The sense and couple electrodes are disposed above the substrate. The insulation protection layer covers the sense and couple electrodes. The sense electrode and the object form a sense capacitor. The couple electrode and the object form a couple capacitor. A negative input terminal of the negative feedback amplifier is electrically connected to the sense electrode, and the couple electrode is electrically connected to a signal output terminal of the negative feedback amplifier and a signal input terminal of the imaging device.

An ice-full state sensing device for an ice making apparatus is provided. A panel disposed at a side of an ice maker to support components. An ejection unit includes an ejector supported by the panel to eject ice made by the ice maker. A driving unit rotates the ejection unit clockwise or counterclockwise within a predetermined angle range. A link unit operates in relation to the ejection unit. An ice-full state sensing lever is connected to an end portion of the link unit to sense an ice-full state of an ice bank during a vertical movement thereof by the link unit. Accordingly, the device can perform an ice-full state sensing operation in a narrow space, and the apparatus can be installed in a narrow space.

A touch-sensitive device includes a substrate, a decorative layer, a touch-sensing structure, a media layer and an insulation layer. The decorative layer is disposed on the substrate, the touch-sensing structure is disposed on the substrate, and a part of the touch-sensing structure overlaps the decorative layer. The media layer is disposed at least between the part of the touch-sensing structure and the decorative layer, and the insulation layer is disposed on the substrate and covers the touch-sensing structure.

A touch-sensitive device includes a transparent substrate, a touch-sensing structure, a decorative layer, a metal trace layer, a first insulation layer and a second insulation layer. The touch-sensing structure is disposed on the transparent substrate and located in a touch-sensitive region of the touch-sensitive device. The decorative layer is disposed on a non-touch-sensitive region of the touch-sensitive device, and the metal trace layer is disposed on the non-touch-sensitive region. The first insulation layer is disposed on the transparent substrate and covers the touch-sensing structure and the metal trace layer. The second insulation layer is disposed on the transparent substrate and distributed only in the non-touch-sensitive region to provide a distribution area substantially overlapping the metal trace layer.

The invention relates to a test method for an unshaded corona onset voltage of a medium-voltage crosslinked polyethylene cable. The test method is characterized by comprising the following steps: taking a medium-voltage crosslinked polyethylene unshaded cable head without an insulating jacket tube as a tested main body; in a darkroom, using a power frequency alternating current voltage-resisting device frequently used in the present power system as a test device; performing an alternating current voltage-resisting test on the tested cable head; and in the alternating current voltage-resisting test, observing and recording a test voltage value at the corona starting moment of a cut port of a semi-conductive layer of the cable head, thereby obtaining a corona onset voltage value of the cable. According to the test method provided by the invention, the internal defect and insulation detect of the cable head can be detected and treated in advance; especially, before the cable is used, the insulation detect of the new medium-voltage crosslinked polyethylene cable head is detected as early as possible; the cable accidents are eliminated before the running of the cable; the work reliability of the medium-voltage crosslinked polyethylene cable is increased, so that the medium-voltage crosslinked polyethylene cable accidents are reduced or eliminated; and the power supply reliability of the power system and the power-utilization reliability of the cable users are increased.

A semiconductor device may include a linear gate trench that crosses an active region of a substrate of the semiconductor device. The active region may include a plurality of gate areas at a bottom of the gate trench and junction areas at a surface of the substrate in a central portion and opposite end portions of the active region. A conductive line may be in a lower portion of the gate trench. The conductive line may include a gate line and a capping layer that at least partially isolates the gate line from an upper surface of the conductive line. A sealing line may be in an upper portion of the gate trench. The sealing line may cover the conductive line and a surface of the sealing line may be coplanar with the junction areas.

The present invention discloses a radio frequency integrated circuit and a method for manufacturing the same. The radio frequency integrated circuit is manufactured by forming an inductor and a passivation layer on an insulator substrate of a first substrate, forming an element layer having a multi-layer wiring structure on a semiconductor substrate, an inductor coupling line formed on the top portion of the element layer, first and second via contact plugs formed on the inductor coupling line, and an input/output pad coupled to the second via contact plug on a second substrate, and bonding the first substrate onto the second substrate, so that the inductor of the first substrate can be coupled to the first via contact plug of the second substrate. As a result, the radio frequency integrated circuit includes the inductor having a high Q value, by forming the inductor sufficiently separately from the semiconductor substrate on which the elements have been formed.

A memory includes: a semiconductor substrate (1), a doped source area (2) and a doped drain area (3) set in the semiconductor substrate (1), and a channel area (4) set between said doped source area (2) and said doped drain area (3); a first insulating layer (5) located on the semiconductor substrate (1), a charge memory layer (6) composed of polysilicon located on said first insulating layer (5); an SiGe conducting layer (7) set in said charge memory layer (6).

The invention provides a flat-bottom guide cylinder of a czochralski silicon single crystal furnace. The guide cylinder comprises a guide cylinder side wall part, a guide cylinder transition part anda guide cylinder flat bottom part, wherein the guide cylinder side wall part, the guide cylinder transition part and the guide cylinder flat bottom part are sequentially connected; the guide cylinderside wall part, the guide cylinder transition part and the guide cylinder flat bottom part are of annular structures, the diameter of the guide cylinder flat bottom part is smaller than that of the guide cylinder side wall part, and the guide cylinder flat bottom part and the guide cylinder side wall part are coaxially arranged, so that a gap between the liquid level of a silicon solution and theguide cylinder is reduced. The flat-bottom guide cylinder is provided with the guide cylinder flat bottom, so that the gap drop between the guide cylinder and the liquid level is small, the gas flow rate is increased, volatilized oxygen can be rapidly taken away, the oxygen content of large-size single crystals can be effectively reduced, and the quality of the large-size single crystals is improved.

A method of manufacturing a winding assembly for an electrical machine, the method comprising: selecting (S1) a mathematical function defining the spatial separation between adjacent turns of a winding path, the mathematical function dependent on one or more parameters of the electrical machine and/or of the anticipated operating environment of the electrical machine; forming (S2), by three-dimensional, 3D, printing, an electrically insulating body comprising a channel defining the winding path in accordance with said function, the channel having an inlet and an outlet; heating (S3) the electrically insulating body to a temperature above the melting point of an electrically conducting material; flowing (S4) the electrically conducting material through the inlet to the outlet to fill the channel; and cooling the electrically insulating body to solidify the electrically conducting material within the channel, thereby forming said winding assembly.

A device for insulating an electrically conducting plane having a first electric potential relatively to a second electric potential is provided. The device comprises an insulating substrate including two parallel planar surfaces, and a first conducting outer layer and an electrostatic field reducer. The electrostatic field reducer reduces the value of the electrostatic field in a point of the peripheral edge, the reducer includes at least one conducting area distinct from the first outer layer, positioned on the first surface of the insulating substrate and/or in the insulating substrate. The reducer reduces the value of the electrostatic field in this point relative to the value of the electrostatic field in this point in the absence of the conducting area. The conducting area has a potential with a value strictly comprised between the values of the first and second potentials.