42results about How to "Increase insulation thickness" patented technology

On a surface of a glass cloth adhered a mica layer sheet, a mixture of inorganic particles having a thermal conductivity of at least 5 W / mK, a resin, and a solvent is applied to form a layer of the mixture of the inorganic particles, the resin, and the solvent; the layer of the mixture is reduced in thickness using a doctor blade, followed by pressurizing to form a high thermally conducting layer; the mica layer sheet on which the high thermally conducting layer is disposed is cut to obtain a mica insulating tape; and the mica insulation tape is wound around a coil conductor. As a result, an insulated coil that is excellent in the voltage endurance characteristics and has a high thermal conductivity is manufactured.

On a surface of a glass cloth adhered a mica layer sheet, a mixture of inorganic particles having a thermal conductivity of at least 5 W / mK, a resin, and a solvent is applied to form a layer of the mixture of the inorganic particles, the resin, and the solvent; the layer of the mixture is reduced in thickness using a doctor blade, followed by pressurizing to form a high thermally conducting layer; the mica layer sheet on which the high thermally conducting layer is disposed is cut to obtain a mica insulating tape; and the mica insulation tape is wound around a coil conductor. As a result, an insulated coil that is excellent in the voltage endurance characteristics and has a high thermal conductivity is manufactured.

An imaging device for sensing an image of an object includes a negative feedback amplifier, a substrate, a sense electrode, a couple electrode and an insulation protection layer. The sense and couple electrodes are disposed above the substrate. The insulation protection layer covers the sense and couple electrodes. The sense electrode and the object form a sense capacitor. The couple electrode and the object form a couple capacitor. A negative input terminal of the negative feedback amplifier is electrically connected to the sense electrode, and the couple electrode is electrically connected to a signal output terminal of the negative feedback amplifier and a signal input terminal of the imaging device.

An ice-full state sensing device for an ice making apparatus is provided. A panel disposed at a side of an ice maker to support components. An ejection unit includes an ejector supported by the panel to eject ice made by the ice maker. A driving unit rotates the ejection unit clockwise or counterclockwise within a predetermined angle range. A link unit operates in relation to the ejection unit. An ice-full state sensing lever is connected to an end portion of the link unit to sense an ice-full state of an ice bank during a vertical movement thereof by the link unit. Accordingly, the device can perform an ice-full state sensing operation in a narrow space, and the apparatus can be installed in a narrow space.

A touch-sensitive device includes a substrate, a decorative layer, a touch-sensing structure, a media layer and an insulation layer. The decorative layer is disposed on the substrate, the touch-sensing structure is disposed on the substrate, and a part of the touch-sensing structure overlaps the decorative layer. The media layer is disposed at least between the part of the touch-sensing structure and the decorative layer, and the insulation layer is disposed on the substrate and covers the touch-sensing structure.

A touch-sensitive device includes a transparent substrate, a touch-sensing structure, a decorative layer, a metal trace layer, a first insulation layer and a second insulation layer. The touch-sensing structure is disposed on the transparent substrate and located in a touch-sensitive region of the touch-sensitive device. The decorative layer is disposed on a non-touch-sensitive region of the touch-sensitive device, and the metal trace layer is disposed on the non-touch-sensitive region. The first insulation layer is disposed on the transparent substrate and covers the touch-sensing structure and the metal trace layer. The second insulation layer is disposed on the transparent substrate and distributed only in the non-touch-sensitive region to provide a distribution area substantially overlapping the metal trace layer.

Disclosed is a method for modifying an insulating film with plasma using a plasma processing apparatus which introduces a microwave into a processing chamber through a plane antenna having a plurality of holes. Processing gas containing a noble gas and oxygen is introduced into the processing chamber and microwave is introduced into the processing chamber through the plane antenna. Plasma composed mainly of O2+ ions and O(1D2) radicals is generated in a pressure condition within a range of 6.7 Pa to 267 Pa to modify the insulating film with the plasma.

An ice-full state sensing device for an ice making apparatus is provided. A panel disposed at a side of an ice maker to support components. An ejection unit includes an ejector supported by the panel to eject ice made by the ice maker. A driving unit rotates the ejection unit clockwise or counterclockwise within a predetermined angle range. A link unit operates in relation to the ejection unit. An ice-full state sensing lever is connected to an end portion of the link unit to sense an ice-full state of an ice bank during a vertical movement thereof by the link unit. Accordingly, the device can perform an ice-full state sensing operation in a narrow space, and the apparatus can be installed in a narrow space.

A suspended capacitive fingerprint sensor includes a substrate, capacitive sensing units disposed on the substrate and one or more insulation protection layer. Each of the capacitive sensing units includes a fixed electrode, a suspended electrode, and a chamber between the fixed electrode and the suspended electrode. The insulation protection layer covers the capacitive sensing units, so that the capacitive sensing units sense a fingerprint of a finger above the insulation protection layer. A method for manufacturing the suspended capacitive fingerprint sensor is also provided.

A microelectronic assembly can include a microelectronic device having device contacts exposed at a surface thereof and an interconnection element having element contacts and having a face adjacent to the microelectronic device. Conductive elements, e.g., wirebonds connect the device contacts with the element contacts and have portions extending in runs above the surface of the microelectronic device. A conductive layer has a conductive surface disposed at at least a substantially uniform distance above or below the plurality of the runs of the conductive elements. In some cases, the conductive material can have first and second dimensions in first and second horizontal directions which are smaller than first and second corresponding dimensions of the microelectronic device. The conductive material is connectable to a source of reference potential so as to achieve a desired impedance for the conductive elements.

A method for manufacturing a semiconductor physical quantity sensor including a support substrate, a movable electrode, a fixed electrode is provided. The method includes the steps of: preparing a multi-layered substrate; forming a compression stress layer on a part of a surface of the semiconductor layer; forming a trench in the semiconductor layer; and releasing the movable electrode from the substrate by removing the insulation film. In the step of releasing, the part of the semiconductor layer, on which the compression stress layer is disposed, is cambered by the compression stress toward a direction apart from the substrate.

The present invention discloses a radio frequency integrated circuit and a method for manufacturing the same. The radio frequency integrated circuit is manufactured by forming an inductor and a passivation layer on an insulator substrate of a first substrate, forming an element layer having a multi-layer wiring structure on a semiconductor substrate, an inductor coupling line formed on the top portion of the element layer, first and second via contact plugs formed on the inductor coupling line, and an input / output pad coupled to the second via contact plug on a second substrate, and bonding the first substrate onto the second substrate, so that the inductor of the first substrate can be coupled to the first via contact plug of the second substrate. As a result, the radio frequency integrated circuit includes the inductor having a high Q value, by forming the inductor sufficiently separately from the semiconductor substrate on which the elements have been formed.

A method for manufacturing a semiconductor physical quantity sensor including a support substrate, a movable electrode, a fixed electrode is provided. The method includes the steps of: preparing a multi-layered substrate; forming a compression stress layer on a part of a surface of the semiconductor layer; forming a trench in the semiconductor layer; and releasing the movable electrode from the substrate by removing the insulation film. In the step of releasing, the part of the semiconductor layer, on which the compression stress layer is disposed, is cambered by the compression stress toward a direction apart from the substrate.

The invention relates to a test method for an unshaded corona onset voltage of a medium-voltage crosslinked polyethylene cable. The test method is characterized by comprising the following steps: taking a medium-voltage crosslinked polyethylene unshaded cable head without an insulating jacket tube as a tested main body; in a darkroom, using a power frequency alternating current voltage-resisting device frequently used in the present power system as a test device; performing an alternating current voltage-resisting test on the tested cable head; and in the alternating current voltage-resisting test, observing and recording a test voltage value at the corona starting moment of a cut port of a semi-conductive layer of the cable head, thereby obtaining a corona onset voltage value of the cable. According to the test method provided by the invention, the internal defect and insulation detect of the cable head can be detected and treated in advance; especially, before the cable is used, the insulation detect of the new medium-voltage crosslinked polyethylene cable head is detected as early as possible; the cable accidents are eliminated before the running of the cable; the work reliability of the medium-voltage crosslinked polyethylene cable is increased, so that the medium-voltage crosslinked polyethylene cable accidents are reduced or eliminated; and the power supply reliability of the power system and the power-utilization reliability of the cable users are increased.

A semiconductor device may include a linear gate trench that crosses an active region of a substrate of the semiconductor device. The active region may include a plurality of gate areas at a bottom of the gate trench and junction areas at a surface of the substrate in a central portion and opposite end portions of the active region. A conductive line may be in a lower portion of the gate trench. The conductive line may include a gate line and a capping layer that at least partially isolates the gate line from an upper surface of the conductive line. A sealing line may be in an upper portion of the gate trench. The sealing line may cover the conductive line and a surface of the sealing line may be coplanar with the junction areas.

A universal boxcar is provided with load carrying capabilities of a conventional uninsulated boxcar and temperature ratings of an insulated boxcar. The insulated boxcar may be formed with interior dimensions corresponding generally with interior dimensions of an uninsulated boxcar without requiring the use of high cost, high performance insulation. The insulated boxcar may be formed at a reasonable cost and selling price with increased load carrying capacity, increased service life, and reduced maintenance costs as compared to conventional insulated boxcars.

An electrical connector for a circuit board includes an insulated housing, two narrow metal brackets, and a plurality of conductive contacts. The insulated housing has a connection plate, a raised portion, and two coupling portions at two opposite sides of the raised portion. The raised portion defines a plurality of contact grooves. Each coupling portion is formed in front of the raised portion. The two narrow metal brackets are provided for mounting with the coupling portions of the insulated housing. Each narrow metal bracket has a main plate, front and rear interference tabs for being interfered with one coupling portion of the insulated housing, and at least one positioning tab for being fixed onto the circuit board. The conductive contacts are fitted through the contact grooves of the raised portion.

The present invention discloses a radio frequency integrated circuit and a method for manufacturing the same. The radio frequency integrated circuit is manufactured by forming an inductor and a passivation layer on an insulator substrate of a first substrate, forming an element layer having a multi-layer wiring structure on a semiconductor substrate, an inductor coupling line formed on the top portion of the element layer, first and second via contact plugs formed on the inductor coupling line, and an input / output pad coupled to the second via contact plug on a second substrate, and bonding the first substrate onto the second substrate, so that the inductor of the first substrate can be coupled to the first via contact plug of the second substrate. As a result, the radio frequency integrated circuit includes the inductor having a high Q value, by forming the inductor sufficiently separately from the semiconductor substrate on which the elements have been formed.

A memory includes: a semiconductor substrate (1), a doped source area (2) and a doped drain area (3) set in the semiconductor substrate (1), and a channel area (4) set between said doped source area (2) and said doped drain area (3); a first insulating layer (5) located on the semiconductor substrate (1), a charge memory layer (6) composed of polysilicon located on said first insulating layer (5); an SiGe conducting layer (7) set in said charge memory layer (6).

A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.

A semiconductor device may include a linear gate trench that crosses an active region of a substrate of the semiconductor device. The active region may include a plurality of gate areas at a bottom of the gate trench and junction areas at a surface of the substrate in a central portion and opposite end portions of the active region. A conductive line may be in a lower portion of the gate trench. The conductive line may include a gate line and a capping layer that at least partially isolates the gate line from an upper surface of the conductive line. A sealing line may be in an upper portion of the gate trench. The sealing line may cover the conductive line and a surface of the sealing line may be coplanar with the junction areas.

An imaging device for sensing an image of an object includes a negative feedback amplifier, a substrate, a sense electrode, a couple electrode and an insulation protection layer. The sense and couple electrodes are disposed above the substrate. The insulation protection layer covers the sense and couple electrodes. The sense electrode and the object form a sense capacitor. The couple electrode and the object form a couple capacitor. A negative input terminal of the negative feedback amplifier is directly electrically connected to the sense electrode, and the couple electrode is directly electrically connected to one of a signal output terminal of the negative feedback amplifier and a signal input terminal of the imaging device.

A suspended capacitive fingerprint sensor includes a substrate, capacitive sensing units disposed on the substrate and one or more insulation protection layer. Each of the capacitive sensing units includes a fixed electrode, a suspended electrode, and a chamber between the fixed electrode and the suspended electrode. The insulation protection layer covers the capacitive sensing units, so that the capacitive sensing units sense a fingerprint of a finger above the insulation protection layer. A method for manufacturing the suspended capacitive fingerprint sensor is also provided.

The invention provides a flat-bottom guide cylinder of a czochralski silicon single crystal furnace. The guide cylinder comprises a guide cylinder side wall part, a guide cylinder transition part anda guide cylinder flat bottom part, wherein the guide cylinder side wall part, the guide cylinder transition part and the guide cylinder flat bottom part are sequentially connected; the guide cylinderside wall part, the guide cylinder transition part and the guide cylinder flat bottom part are of annular structures, the diameter of the guide cylinder flat bottom part is smaller than that of the guide cylinder side wall part, and the guide cylinder flat bottom part and the guide cylinder side wall part are coaxially arranged, so that a gap between the liquid level of a silicon solution and theguide cylinder is reduced. The flat-bottom guide cylinder is provided with the guide cylinder flat bottom, so that the gap drop between the guide cylinder and the liquid level is small, the gas flow rate is increased, volatilized oxygen can be rapidly taken away, the oxygen content of large-size single crystals can be effectively reduced, and the quality of the large-size single crystals is improved.

A method of manufacturing a winding assembly for an electrical machine, the method comprising: selecting (S1) a mathematical function defining the spatial separation between adjacent turns of a winding path, the mathematical function dependent on one or more parameters of the electrical machine and / or of the anticipated operating environment of the electrical machine; forming (S2), by three-dimensional, 3D, printing, an electrically insulating body comprising a channel defining the winding path in accordance with said function, the channel having an inlet and an outlet; heating (S3) the electrically insulating body to a temperature above the melting point of an electrically conducting material; flowing (S4) the electrically conducting material through the inlet to the outlet to fill the channel; and cooling the electrically insulating body to solidify the electrically conducting material within the channel, thereby forming said winding assembly.

A device for insulating an electrically conducting plane having a first electric potential relatively to a second electric potential is provided. The device comprises an insulating substrate including two parallel planar surfaces, and a first conducting outer layer and an electrostatic field reducer. The electrostatic field reducer reduces the value of the electrostatic field in a point of the peripheral edge, the reducer includes at least one conducting area distinct from the first outer layer, positioned on the first surface of the insulating substrate and / or in the insulating substrate. The reducer reduces the value of the electrostatic field in this point relative to the value of the electrostatic field in this point in the absence of the conducting area. The conducting area has a potential with a value strictly comprised between the values of the first and second potentials.

The invention provides a treatment method of a wrapped-type coaxial-cable surface. The treatment method comprises the following steps of: after finishing the wrapping of an outer wrapping tape of a cable, uniformly coating a layer of insulation silicon oil on the surface of the cable by adopting the insulation silicon oil in the cable coiling process, then placing the cable in a constant-temperature cabinet, and heating the cable for 5 hours in 80-90 DEG C. Compared with the prior art, the treatment method of the wrapped-type coaxial-cable surface, provided by the invention, has the advantages that after the insulation silicon oil layer is coated on the wrapped-type coaxial-cable, the surface of the coaxial cable is more smooth, and meanwhile, the insulation thickness of the cable surface is increased, thus the coaxial cable is more wear-resistant and can resist higher voltage in the machining process.