86298 results about "Optoelectronics" patented technology

A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.

The present invention relates to systems and methods for generating and / or modulating illumination conditions to generate high-quality light of a desired and controllable color, for creating lighting fixtures for producing light in desirable and reproducible colors, and for modifying the color temperature or color shade of light within a prespecified range after a lighting fixture is constructed. In one embodiment, LED lighting units capable of generating light of a range of colors are used to provide light or supplement ambient light to afford lighting conditions suitable for a wide range of applications.

A deflecting unit deflects a light beam emitted by each of a plurality of light-beam emitting units independently to scan surfaces of different bodies to be scanned. Each of a plurality of light-receiving units receives the deflected light beam at a predetermined position in a direction of the deflection. An incident angle of the deflected light beam with respect to a scanning line extending in a direction of scanning on a light-receiving surface of the light-receiving unit is set to be identical for all of the light-receiving units.

A laser scanning system for generating a laser scanning pattern in a scanning field, while amplifying the scan-angle multiplication factor of rotating mirrors employed therein. The laser scanning system employs rotatable laser scanning assembly having an axis of rotation and first and second rotating mirrors with normal vectors that are coplanar with each other and said rotational axis, and which form an acute angle substantially less than 90 degrees so as to provide a laser scanning assembly with a scan angle multiplication factor that is greater than 2.0. A cluster of stationary mirrors mounted about the first and second rotating mirrors, for sweeping a laser beam off the cluster of stationary mirrors after a laser beam has been reflected off the first rotating mirror, then reflected off the second rotating mirror, and then directed outwardly towards an array of pattern mirrors, so as to generate a resultant laser scanning pattern within the scanning field.

A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and / or UV radiation.

A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Provided is a method of fabricating a passivation layer for an organic device, including: forming the organic device on a substrate; and forming a passivation layer on the organic device. Here, forming the passivation layer on the organic device includes forming an inorganic thin film by thin film deposition using pulsed plasma.

An exterior mirror sub-assembly includes a reflective element, a back plate, and a display element having a light source that is activatable to emit light. The display element attaches to a display receiving portion of the back plate and the light source is activatable to emit light through the display receiving portion. The display receiving portion may be configured to orient the display element at a predetermined angle so that light exiting the display element when the light source is activated may be directed (a) generally away from the vehicle when the mirror assembly is mounted to the vehicle so as to be principally viewed by drivers of other vehicles or (b) generally toward the driver of the vehicle when the mirror assembly is mounted to the vehicle so as to be principally viewed by the driver of the host vehicle.

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

A method for fabricating a semiconductor device, includes forming a porous dielectric film above a substrate using a porous insulating material, forming an opening in the porous dielectric film, repairing film quality of the porous dielectric film on a surface of the opening by feeding a predetermined gas replacing a Si—OH group to the opening, and performing pore sealing of the surface of the opening using the same predetermined gas as that used for film quality repairs after repairing the film quality.

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.

A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.