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5 results about "Optoelectronics" patented technology

Optoelectronics (or optronics) is the study and application of electronic devices and systems that source, detect and control light, usually considered a sub-field of photonics. In this context, light often includes invisible forms of radiation such as gamma rays, X-rays, ultraviolet and infrared, in addition to visible light. Optoelectronic devices are electrical-to-optical or optical-to-electrical transducers, or instruments that use such devices in their operation. Electro-optics is often erroneously used as a synonym, but is a wider branch of physics that concerns all interactions between light and electric fields, whether or not they form part of an electronic device.

Sensor and method for providing high transfer rate in page-based optical data storage

ActiveUS7446297B1without reducing sensitivityefficiently formedSolid-state devicesMaterial analysis by optical meansOptoelectronicsActive layer
A sensor and method for page-based optical data storage. The sensor includes a partially-reflective mirror, a reflective mirror disposed substantially collinear with and spaced apart from the partially-reflective mirror, and an active layer disposed substantially collinear with and between the partially-reflective mirror and the reflective mirror. The partially-reflective mirror has a first and second side and transmits a portion of light incident on the first side. The reflective mirror reflects light incident on the reflective mirror toward the partially-reflective mirror. The active layer absorbs at least a portion of the light oscillating at the resonant frequency.
Owner:ORACLE AMERICAN INC

Probe card

An object of the invention is to provide a probe card capable of properly performing a measurement. A probe card according to the invention includes: probes 100 shaped to allow vertical elastic deformation; a supporting substrate 200 with the probes provided on the lower surface thereof; a main substrate 300 positioned opposing the upper surface of the supporting substrate 200; an intermediate substrate 400 disposed between the supporting substrate 200 and main substrate 300; a supporting member 500 that is a column-shaped member with one end thereof attached to the center of the supporting substrate 200 and the other end thereof attached to the intermediate substrate 400 and holds the supporting substrate 200 so that the supporting substrate 200 is inclinable; and elastic members for holding the supporting substrate 200 so that the supporting substrate 200 is in a horizontal position relative to the main substrate 300, which are provided between the supporting substrate 200 and main substrate 300.
Owner:NIHON DENSHIZAIRYO

Chromogenic humidity sensor

The present invention relates to a humidity sensor, and more particularly, to a resistance film-type real-time chromogenic humidity sensor produced with a polyelectrolyte thin film. The humidity sensor according to the present invention is a chromogenic hygrometer in which a polyelectrolyte nano thin film that absorbs moisture is formed on a reflective layer, and the nano thin film varies terms of color and electrical resistance as moisture is absorbed and the thickness varies. The hygrometer according to the present invention is a dual-function hygrometer, the color and resistance of which vary. Provided is the chromogenic hygrometer in which the sensor made using a PSS-b-PMB thin film varies in color between purple, blue, green, yellow, orange, and red according to humidity at a very high response speed of within one minute.
Owner:POSTECH ACADEMY INDUSTRY FOUNDATION

Light and miniature big-target-surface low-light lens and imaging method thereof

The invention relates to a light and miniature big-target-surface low-light lens, and the lens comprises a front lens group A, a diaphragm B and a rear lens group C, wherein the front lens group A, the diaphragm B and the rear lens group C are sequentially arranged in an incident direction of an optical path. The front lens group A includes a positive meniscus lens A1, a negative meniscus lens A2,a biconcave lens A3 and a biconvex lens A4, wherein the positive meniscus lens A1, the negative meniscus lens A2, the biconcave lens A3 and the biconvex lens A4 are sequentially arranged in an incident direction of the optical path. The biconcave lens A3 and the biconvex lens A4 are in close connection with each other as a first bonding group. The rear lens group C includes a biconcave lens C1, abiconvex lens C2, a biconvex lens C3, a plano-convex lens C4 and a negative meniscus lens C5, wherein the biconcave lens C1, the biconvex lens C2, the biconvex lens C3, the plano-convex lens C4 and the negative meniscus lens C5 are sequentially arranged in an incident direction of the optical path. The biconcave lens C1 and the biconvex lens C2 are in close connection with each other as a secondbonding group. The invention also relates to an imaging method of the lens. The lens is reasonable in design, effectively improves the imaging quality under the requirement of the large target surfaceof the lens, reduces the number of optical lenses, and realizes light and miniature lens. The lens has strong light collecting and light transmitting ability, and the target surface of the lens is large. The lens is high in optical resolution, is large in angle of view, and is large in observable range.
Owner:FUJIAN FORECAM OPTICS CO LTD

Transistor array substrate

InactiveCN102226992AConfirm electricalSemiconductor/solid-state device detailsSolid-state devicesOptoelectronicsElectrical testing
The invention provides a transistor array substrate, comprising a thin film transistor, an insulating layer, a flat layer, two electrical testing pins, electrical measuring elements and pixel electrodes, wherein the thin film transistor is arranged on the transistor array substrate; the insulating layer is arranged at the lowest layer of the transistor array substrate; the flat layer is arranged above the insulating layer; the pixel electrodes are distributed above the flat layer; each pixel electrode comprises an upper pixel electrode, a lower pixel electrode and an electrode bridge for connecting the upper pixel electrode with the lower pixel electrode; the electrical measuring elements are arranged at the periphery of the transistor array substrate; the width of parts of electrical measuring elements is same as that of the electrode bridge; and the two electrical testing pins are arranged on the flat layer and connected with two ends of each electrical measuring element respectively. The transistor array substrate can confirm the electrical property of thin film transistor units accurately in time and guide the production condition quickly when any abnormity occurs.
Owner:AU OPTRONICS CORP