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This invention relates to a method for amplifying the polarization ratio of a photodetector based on a two-dimensional semi-metallic material and a heterostructure, belonging to the field of photodetection technology. Based on a strategy combining a two-dimensional semi-metallic material and a heterostructure, a BP / MoS2 / WTe2 heterojunction is constructed, where BP is the light-absorbing layer, MoS2 is the barrier layer, and WTe2 is the contact layer. This invention not only achieves selective carrier transport and reduces dark current, but also allows WTe2 to reduce contact resistance and provide a fast carrier extraction channel, realizing asymmetric amplification of the photocurrent, thereby achieving active amplification of the polarization ratio even at zero bias. This invention breaks the limitation of the inherent anisotropy of materials on the magnitude of the polarization ratio, and uses a completely dry transfer process to fabricate polarization detection photodetectors, eliminating the need for additional polarization elements and chemical solution treatment. It boasts advantages such as simple process, low cost, high repeatability, and no pollution.