The invention relates to the technical field of
perovskite device preparation, in particular to a
perovskite film
transfer printing method. Comprising the following steps: preparing a
perovskite thin film layer on a
silicon wafer substrate; sequentially depositing a first
metal oxide thin film layer and a second
metal oxide thin film layer with medium and high tensile stress on the surface of the perovskite thin film layer by adopting an
atomic layer deposition process to jointly form a gradient stress thin
film structure; adhering a viscous
transfer printing carrier on the surface of the second
metal oxide thin film layer, and applying external force to bend and deform the
silicon wafer substrate; and when the
strain energy release rate exceeds the interface
adhesive force between the perovskite thin film layer and the
silicon wafer substrate, the perovskite thin film layer is stripped from the silicon wafer substrate and transferred to a target substrate,
hot pressing operation is performed to remove the viscous
transfer printing carrier, and meanwhile,
residual stress in the gradient stress thin
film structure is released. The method has the advantages that
dry transfer printing of the perovskite thin film is achieved, and damage to the perovskite thin film is avoided; the aluminum oxide film can passivate the surface defects of the perovskite film, and the performance of a subsequently prepared device can be improved.