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Superconducting nanowire single photon detector based on deep silicon etching process and preparation method

The invention provides a superconducting nanowire single photon detector based on a deep silicon etching process and a preparation method. The detector comprises an SOI base which is composed of a back substrate, a buried oxygen layer and top silicon in sequence from bottom to top, a first anti-reflection layer which is disposed on the surface of the top silicon, a second anti-reflection layer which is disposed on the surface of the back substrate, a deep groove which penetrates through the second anti-reflection layer, the back substrate and the buried oxygen layer, an optical cavity structure which is disposed on the surface of the first anti-reflection layer, superconducting nanowires which are disposed between the first anti-reflection layer and the optical cavity structure, and a mirror which is disposed on the surface of the optical cavity structure. By etching the deep groove on the substrate, the distance between a coupling optical fiber and the device is narrowed, the use of a long-focus lens in the traditional back-coupling superconducting nanowire single photon detector is avoided, and alignment coupling between the MU head of an optical fiber and the device is facilitated. The problem concerning long-distance focusing in the optical cavity structure and the influence of the Fabry-Perot cavity of the susbtrate on the absorption efficiency are avoided. The absorption efficiency of target wavelength is improved. The detection efficiency of the device is improved.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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