58results about How to "Reduce contact resistance value" patented technology

A padding method for contact hole is provided, which comprises: providing an underlay with at least one open mouth on its surface; forming the adhesion layer on the said underlay; forming the barrier layer on the said adhesion layer; reduction processing to the said barrier layer at bottom of the open mouth of the contact hole; forming W-Plug inside the said open mouth of the contact hole. The padding method in the invention reduces the thickness of the barrier layer at bottom of the contact hole and improves the electrical properties of the contact hole.

An arc start control method is provided for consumable electrode arc welding. According to this method, a welding wire (1), supplied through a welding torch (4), is brought into contact with a work (2) and an initial current is applied to the welding wire (1) (at time t2) and the work (2) that are held in contact with each other (at time t3). Then, an initial arc is generated by moving the welding wire (1) away from the work (2) with the application of the initial current maintained, and thereafter the initial arc is changed to a steady arc, wherein the initial current is increased gradually with a predetermined increase rate (at time t4). Thus when the welding starts, the welding wire (1) is temporarily contacted to the work (2) then separated from the same, in the contraction arc guide method generating arc to guide arc, arc guide badness on the work (20) to be welded coated by the welding wire (1) can be restrained.

The invention discloses a gold alloy target and a preparation method thereof and is mainly applied to manufacturing of ohmic contacts of GaAs-based semiconductor devices. The gold alloy target comprises components in percentage as follows: 9.5-13.5wt% of Ge, 4.2-5.8wt% of Ni and the balance of Au. The density of the target is higher than 99.8%, the oxygen content is lower than 50 ppm, the surface roughness Ra is higher than 0.5 mu m, the target is accurate in component and precise in size, has the tinier organization structure and is prepared with centrifugal casting, hot pressing and machining methods, and the method is short in process, low in cost and suitable for mass production. With the adoption of the method, the machining difficulty caused by alloy brittleness is overcome, and the gold alloy sputtering target with excellent performance can be prepared.

There is provided a condenser microphone in which electromagnetic shielding in the connecting part of a microphone capsule and a microphone main body is made more reliable. In the condenser microphone including a microphone capsule 10 and a microphone main body 20, the microphone capsule 10 being configured so that an electrostatic acoustic-electric converter is accommodated in a metallic capsule housing 11, and an extraction electrode 15 of a backplate 142 is disposed in substantially the central portion of a connection-side opening part 120, and the microphone main body 20 being configured so that a circuit board 22 is disposed at a predetermined depth position in a connection-side opening part 210 of a metallic microphone housing 21 to which the capsule housing 11 is detachably connected, and a field effect transistor 23 and a conductive contacting means for connecting the gate of the field effect transistor 23 to the extraction electrode 15 are disposed; and configured so that the extraction electrode 15 is connected to the gate of the field effect transistor 23 via the conductive contacting means with the connection of the capsule housing 11 to the microphone housing 21, as the conductive contacting means, a conductive elastic material 31 such as a conductive resin foam or a conductive cloth is used, and a ferrite material 32 is disposed on the circuit board 22 so as to surround the conductive elastic material 31.

Provided is a substrate inspecting jig, which can reduce a contact resistance between a contact maker and a connecting electrode unit and which has a stable contact resistance without regard to the number of uses. In order to inspect the electric characteristics of an object substrate, the substrate inspecting jig acquires the electric conductions between a substrate inspecting device body and a plurality of substrate inspection points formed at the wiring pattern of the object substrate. The substrate inspecting jig comprises a group of electrically conductive contacts having two end portions for electric conductions, one of which is forced to contact with one of the substrate inspection points, a contact holder for holding the contact group, and a connecting electrode member including the connecting electrode unit arranged to confront the other end portions of the individual contacts of the contact group and adapted to be connected with the substrate inspecting device body. At least a portion of the side circumference near each of the other end portions is brought, when the other end portions of the contact group and the connecting electrode member are to be connected, into contact with a portion of the confronting connecting electrode unit thereby to establish the electrically conductive state.

The invention discloses an electric connector which comprises a plug and a socket. The socket is composed of a body and a guide pillar, a jack is formed in the body, the guide pillar is arranged in the jack and is connected with the bottom of the body, the plug comprises a plug body matched with the jack and a guide pillar groove matched with the guide pillar, a first elastic part which protrudes towards the other of the jack and the plug body is arranged on any of the peripheral faces of the jack and the plug body, and a second elastic part which protrudes towards the other of the guide pillar and the guide pillar groove is arranged on any of the guide pillar and the guide pillar groove. Through the arrangement of the first elastic part and the second elastic part, the contact area between the plug and the socket is increased, the contact pressure between the plug and the socket is increased, and therefore the contact resistance value is reduced. According to the electric connector, the structures and the diameters of the plug and the socket are not changed, the manufacturing process is quite simple, and the manufacturing cost is reduced.

The invention provides an electrode structure and a manufacturing method thereof, including a base material, an electrode bridge structure, a dielectric layer and a conductive pattern. The dielectric layer is formed on the electrode bridge structure and the substrate and has a plurality of insulating block patterns, each of the insulating block patterns covers a part of the electrode bridge structure to form a plurality of exposed bridge patterns, each of which The insulating block patterns and each of the bridge patterns are alternately arranged in sequence along a predetermined direction. The conductive pattern has a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode is electrically connected to the second electrode, the third electrode and the fourth electrode cover the electrode bridge structure Some bridging patterns are used to reduce the contact resistance value of the electrode bridging structure with respect to the third electrode and the fourth electrode.

The invention relates to an electrochemical battery and a manufacture method thereof. The electrochemical battery using a small-size exterior package container discharges on high current. The electrochemical battery is composed of the exterior container, a battery core (7) and electrolyte, wherein the exterior container is composed of a seat (1) and a cover (6), the battery core (7) is mounted in the seat (1), the electrochemical battery comprises at least one lining membrane (2) and a connection terminal (4), the lining membrane (2) is formed on the inner side surface of the seat (1) and composed of an electronic pipe metal, the connection terminal (4) is arranged on the outer side surface of the seat (1) and electrically connected with the lining membrane (2), and a battery core lead (8) being an extension part of the battery core is welded with the lining membrane (2).

The invention discloses a method for reducing the ohmic contact resistance of an HEMT device and relates to the technical field of methods for preparing nitride. The method comprises the steps that (1) an extension structure grows and a GaN layer and a barrier layer are formed on a substrate in sequence; (2) a SiO2 layer grows on the upper surface of the barrier layer; (3) the SiO2 layer is etched to the upper surface of the barrier layer in a drain-source ohm zone; (4) a GaN material is etched in a source-drain ohm zone and etched to the portion below a heterojunction interface of the GaN layer and the barrier layer; (5) secondary extension is conducted on an n-type heavy doping GaN material in the source-drain ohm zone; (6) SiO2 remaining on the upper surface of the barrier layer is etched off and annealing treatment is conducted through a high-temperature annealing furnace in a pure nitrogen atmosphere or a vacuum atmosphere. According to the method, ohmic contact between the n-type heavy doping GaN and a GaN heterojunction side wall is improved and the contact resistance of the n-type heavy doping GaN and the GaN heterojunction side wall is reduced.

The invention provides a stack-based copper zinc tin sulfur selenide (CZTSSe) thin film solar cell and a manufacturing method of the stack-based CZTSSe thin film solar cell. The manufacturing method of the stack-based CZTSSe thin film solar cell sequentially includes: sequentially forming a sulfide layer, a cuprous selenide layer and a zinc stannide layer on a back electron layer, manufacturing a selenide layer containing sulfur compounds and a selenium sulfide solar energy absorbing layer after selenylation and sulfuration, and depositing an n-type buffering layer and a top electron layer to manufacture the stack-based CZTSSe thin film solar cell, wherein the selenium sulfide solar energy absorbing layer comprises a low-energy-gap copper zinc tin selenide (CZTSe) layer arranged between two high-energy-gap CZTSSe layers in a clamping mode to form a stack-based solar energy absorbing layer. Besides, the invention further provides the stack-based CZTSSe thin film solar cell. Due to the fact that the stack-based solar energy absorbing layer improves the light absorbing rate and reduces the recombination rate of electrons / holes, the photoelectric property of the stack-based CZTSSe thin film solar cell is improved.

The invention discloses a seesaw switch which comprises a switch outer shell body, wherein a static terminal, a dynamic terminal and a lamp base are arranged inside the switch outer shell body, a silver contact is arranged above the static terminal, a seesaw is arranged above the dynamic terminal, a spring and a sliding column are arranged under the lamp base through hole sleeves, the sliding column is pressed on the seesaw by the elasticity of the spring, a button and an indicating lamp which is connected with the spring are arranged above the lamp base, a seesaw support is arranged above the dynamic terminal, a protrusion is arranged at the top part of the seesaw support, a groove matched with the protrusion on the seesaw support is formed under the seesaw, and the protrusion is pressed against the inside of the groove. The seesaw switch has the beneficial effects that the seesaw switch is practical, low in production cost and convenient to use, the friction between the seesaw and the dynamic terminal is lowered, the contact resistance value of a product is effectively controlled, the resistance value is greatly reduced, the temperature rise is reduced, the positioning deviation of the seesaw cannot occur when being repeatedly opened and closed, the using performance of the switch is improved, a layer of arc extinction fireproof grease is coated inside the groove, the flashover phenomenon is eliminated, and the service life of the product is long.

Conductive adhesives, which do not have the problem of migration in conductive metals upon application of a voltage and which exhibit low resistance values, are provided.One embodiment of the present invention relates to a conductive adhesive comprising a conductive filler and a resin, characterized in that the conductive filler comprises an alloy powder of silver and tin and further contains an additive comprising at least one member selected from among a chelator, an antioxidant, and a metal surfactant. Additives that can be used are chelators such as hydroxyquinolines, salicylidene aminothiophenols or phenanthrolines, antioxidants such as hydroquinones or benzotriazoles, and metal surfactants such as organic acids, acid anhydrides or organic acid salts.

The invention discloses a preparation method of a solid electrolyte membrane. The method comprises the following steps: carrying out dip coating on a polymer solution by a nonwoven fabric; then dryingand carrying out hot rolling; finally, preparing the solid electrolyte membrane with compact texture and flat surface. The solid-solid interface formed by bonding the solid electrolyte membrane withan electrode material is small and ionic conductivity is low. Besides, the nonwoven fabric plays a role of a framework in the solid electrolyte membrane, therefore, the solid electrolyte membrane hasgood mechanical property, and particularly tensile strength and toughness are greatly improved; by use of the effect, the breaking rate in the assembling process can be reduced and further the production cost is reduced. The product prepared by the preparation method disclosed by the invention is in a strip shape; centralized winding and discharging operation are facilitated in the production process; the preparation method is especially suitable for batch production and support.

The invention relates to an anisotropic conductive adhesive film and a preparation and application method thereof. The anisotropic conductive adhesive film is composed of conductive particles and non-conductive adhesives, wherein the conductive particles are directionally dispersed inside the non-conductive adhesives; the surface of the conductive particles and the surface of the non-conductive adhesives are grafted with any or at least two of the groups of sulfydryl, carboxyl and amino. Under the premise of anisotropic stability, the anisotropic conductive adhesive film can reduce the line width to 15 mu m and the interval to 15 mu m to meet the requirements on micro packing interval and further to avoid open circuit or short circuit during a hot pressing process. The preparation method of the anisotropic conductive adhesive film is simple and controllable and can flexibly design and adjust the arrangement modes of the conductive particles according to packing interval and line width requirements.

There is provided a condenser microphone in which electromagnetic shielding in the connecting part of a microphone capsule and a microphone main body is made more reliable. In the condenser microphone including a microphone capsule 10 and a microphone main body 20, the microphone capsule 10 being configured so that an electrostatic acoustic-electric converter is accommodated in a metallic capsule housing 11, and an extraction electrode 15 of a backplate 142 is disposed in substantially the central portion of a connection-side opening part 120, and the microphone main body 20 being configured so that a circuit board 22 is disposed at a predetermined depth position in a connection-side opening part 210 of a metallic microphone housing 21 to which the capsule housing 11 is detachably connected, and a field effect transistor 23 and a conductive contacting means for connecting the gate of the field effect transistor 23 to the extraction electrode 15 are disposed; and configured so that the extraction electrode 15 is connected to the gate of the field effect transistor 23 via the conductive contacting means with the connection of the capsule housing 11 to the microphone housing 21, as the conductive contacting means, a conductive elastic material 31 such as a conductive resin foam or a conductive cloth is used, and a ferrite material 32 is disposed on the circuit board 22 so as to surround the conductive elastic material 31.

The invention discloses a high heat-dissipation electrical cabinet comprising an electrical cabinet body. The electrical cabinet body is provided with a bottom plate, a left side plate, a right side plate, a back plate, a top plate and a front door, wherein the bottom plate and the top plate are double-layer hollow structure, while the back plate, the left side plate and the right side plate are double-layer hollow structure as well, and are communicated with each other. A first air inlet communicated with the interior is formed on one side face of the bottom plate. Meanwhile, the upper surface of the bottom plate is provided with an air outlet which is communicated with the air pipe and extends to the position of the inner female terminal of the cabinet body. Second air inlets are formedon the upper end surface of the left side plate and the right side plate, and a plurality of air outlet groups which are parallel to each other are provided on the inner wall of the back plate, the left side plate and the right side plate. Each air outlet group comprises a plurality of air outlets provided at intervals. The air outlets in the left side plate, the back plate and the right side plate are provided in a spiral manner. An exhaust port is formed on the top plate, wherein the upper surface of the exhaust port is communicated with the exhaust pipe, and the end of the exhaust pipe is provided with an air evacuating device. According to the high heat-dissipation electrical cabinet, a draught fan is utilized to fit a cabinet body of double-layer hollow structure.so that vortex airflow is formed in the electrical cabinet to dissipate heat in the interior, and the heat dissipation effect is improved.

The invention discloses a connecting method for carbon fibers and a metal wire connector, and relates to connection for carbon fibers and metal. The connecting method comprises the following steps of (1) slurry coating: heating conductive slurry to 50-150 DEG C and diluting, and coating heads of the carbon fibers and the head of a metal wire with the heated and diluted conductive slurry, and meanwhile, immersing a copper pipe into the heated and diluted conductive slurry; (2) curing: putting the carbon fibers, the metal wire and the copper plate after being coated with slurry into air to be naturally cured for 5-20min; (3) connecting: enabling the cured heads of the carbon fibers and the metal wire to be arranged in the cured copper pipe in a sleeving manner; (5) crimping: putting the carbon fibers and the metal wire, which are arranged in the copper pipe in a sleeving manner, on a terminal crimping machine to be impacted and crimped; and (5) injection molding: coating the crimped copper pipe with a thermal shrinkage sleeve, and putting the overall connector on an injection molding machine to be subjected to overall injection molding. The connecting method is simple to operate, capable of realizing tight and firm connection, and safe and reliable in performance.

The invention provides a high-temperature fuel cell bipolar plate anti-oxidation plating layer, and relates to the technical field of fuel cells. The high-temperature fuel cell bipolar plate anti-oxidation plating layer comprises a composite plating layer, wherein the composite plating layer is composed of a CrN film layer, a silver plating layer and a gold plating layer. The preparation method ofthe anti-oxidation plating layer comprises the steps of 1) selecting a stainless steel plate as a bipolar plate material, and pretreating the stainless steel plate; 2) generating a film and depositing the film on the surface of the stainless steel plate to obtain a CrN film layer; 3) plating a silver plating layer on the CrN film layer; and 4) plating a gold plating layer on the silver plating layer. According to the invention, the contact resistance of the bipolar plate can be reduced, the contact resistance value of the stainless steel plate can be further reduced after silver plating due to good conductivity of silver, and meanwhile, the binding force of the plating layer is very good; and a small amount of thin gold is electroplated or sputtered on the silver layer, so that the problem of infirm combination of a gold-plated plating layer can be well solved, and good conductivity and relatively small contact resistance are obtained.

The invention discloses a method for reducing the ohmic contact resistance of an HEMT device, and relates to the technical field of nitride preparation methods. The method comprises the following steps that (1) epitaxial structure growth is carried out, and a GaN layer and a barrier layer are formed on a substrate in sequence; (2) a SiO2 layer is grown on the upper surface of the barrier layer; (3) the SiO2 layer is etched in a drain and source ohmic area to the upper surface of the barrier layer; (4) etching is carried out on a GaN material in the drain and source ohmic area to the position below a heterojunction interface between the GaN layer and the barrier layer, and then a high-temperature annealing furnace is used for carrying out annealing treatment in a pure nitrogen atmosphere or a vacuum atmosphere; (5) secondary epitaxy of an n-type heavy doping GaN material is carried out in the drain and source ohmic area; (6) residual SiO2 on the upper surface of the barrier layer is removed through corrosion. According to the method for reducing the ohmic contact resistance of the HEMT device, ohmic contact between n-type heavy doping GaN and the side wall of a GaN heterojunction is improved, and the contact resistance between the n-type heavy doping GaN and the side wall of the GaN heterojunction is reduced.

The invention discloses a novel dry electrode for electroencephalogram detection based on a spring structure. The novel dry electrode is simple and convenient to use without time-consuming and complicated preparation work, gets rid of the dependency of a traditional electroencephalogram detection electrode on conductive paste and can achieve long-term electroencephalogram detection. The novel dryelectrode adopts a double-layer circuit board and combines with a metal probe to form a closed Faraday cage, an amplifying circuit is located in the cage, and the interference of environmental electromagnetic signals to electroencephalogram signals can be reduced. By adopting a dry electrode and electrode cap separated mode, surface cleaning conducted on the dry electrode can be facilitated, a long electrode or short electrode can be selected according to the demand to adapt to different head sizes and shapes, and the electrode has the wide application prospect on the aspects of neurogenic disease treatment, brain-computer interfaces and limb rehabilitation.

In the case where a HEMT and a resistor element are monolithically integrated, the resistor element has a low sheet resistance value since the resistor element includes a cap layer. If a resistor having a high resistance value is formed, it is required to extend the resistor for a long distance within a chip. As a result, a chip area is increased. A recessed part is provided by removing a cap layer in a predetermined shape, and resistor element electrodes are connected to both ends of the recessed part. A resistor layer is only a channel layer, and a sheet resistance value is high. Thus, a high resistance value can be obtained with a short distance. Since a sufficiently high resistance value can be obtained without extending a resistor for a long distance within a chip, a chip size can be reduced.

The present invention discloses a method for making a self-aligned metal silicate which can improve the electrical property of the contacting surface. The method comprises the processes of forming a metal layer on a semiconductor substrate after forming isolating area, gate structure, lightly doped source / drain areas and gate clearance barrier; carrying out a high dose ion implantation to form the heavily doped source / drain areas; and then making the self-aligned metal silicate. It can be used in semiconductor devices with the dimension smaller than sub-micron while improving effectively electrical properties of metal silicate and shallow contacting surface.

The present invention relates to a semiconductor device and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the following steps: a fluorine-containing dielectric film is formed on a substrate; the dielectric film contains about or less than 25 percent of free fluoride, about or less than 5 percent of pores and a dielectric constant of about or less than 3.8; a first diffusion blocking layer is deposited between the substrate and the dielectric film; a second diffusion blocking layer is deposited between the dielectric film and a wire. The film is formed in the following way: under the conditions when the pressure is about equal to or less than 3 Thor and the radio frequency is about between 500 watts and 5,000 watts, the gas of four fluorinated silicon and silicon methane is induced into a deposition reaction chamber; wherein, the reaction ratio between the four fluorinated silicon and the silicon methane is about equal to or less than 2.5, so as to form the fluorine-containing dielectric film. The present invention improves the quality of FSG dielectric film; and the semiconductor device that adopts the dielectric film can improve the electrical functions.

The invention relates to the field of foam technology, in particular to a new type of environmentally friendly conductive foam, including: conductive foam, conductive fiber cloth, bonding layer, foam core, double-sided tape, metal fiber, carbon fiber, polyester, copper metal , nickel metal, anti-oxidation layer; the foam core is arranged inside the conductive foam; the adhesive layer is arranged outside the foam core, and the foam core is bonded to the conductive fiber cloth through the adhesive layer; One side of the conductive foam is provided with a double-sided adhesive tape; the outer part of the polyester is provided with copper metal; the outer part of the copper metal is provided with nickel metal; the outer part of the nickel metal is provided with an anti-oxidation layer. Through the above structural improvement, it has the advantages of simple structure, convenient preparation, good wear resistance and high temperature resistance, good electromagnetic shielding effect, no toxic substances will be emitted after long-term use, and green environmental protection, thus effectively solving the current problem. There are problems and deficiencies in the device.

A separator and / or protective layer for a lithium cell. In order to enable rapid charging of the cell and to extend the service life of the cell, the separator and / or the protective layer encompasses a copolymer and / or a polymer blend, the copolymer encompassing at least one repeating unit for constituting a polymer having a lithium-ion transference number >0.7 and at least one mechanically stabilizing repeating unit, and / or the polymer blend encompassing at least one polymer having a lithium-ion transference number >0.7 and at least one mechanically stabilizing polymer. Cells, and copolymers, polymer blends, and polymer electrolytes on the basis of polymers having a lithium-ion transference number >0.7, are also described.

The purpose of the present invention is to provide an electroconductive adhesive in which a low contact resistance value is obtained by adding a morpholine as a corrosion inhibitor, and in which long pot life is obtained by suppressing thickening during storage. An electroconductive adhesive characterized by containing (A) an epoxy resin, (B) an amine-based curing agent and / or a phenol-based curing agent, (C) a morpholine reducing agent, (D) an electroconductive filler, and (E) a silane coupling agent. Preferably, the (C) component is at least one species selected from the group consisting of morpholine, 2,6-dimethylmorpholine, 4-(3-hydroxypropyl)morpholine, 4-methylmorpholine, 4-(4-aminophenyl)morpholine, thiomorpholine, and 1,1-dioxothiomorpholine.

A piezo actuator in the form of a piezo injector, includes a holding body having an inner space, and having a piezo element disposed in an inner space and encompassing multiple piezoelectric plies disposed to form a stack, which element is electrically contactable through the holding body. The holding body has one or more connectors for electrical contacting of the piezo element, as well as one or more connectors and flow conduits for delivering into the inner space a fluid that can be metered by way of an adjusting member encompassing the piezo element, such that in the piezo actuator, the flow conduit connecting the inner space and the connector for the fluid is offset radially outward with respect to the electrical conductors leading through the holding body and substantially constituting the electrical contact system, and is disposed to extend substantially parallel to said conductors; and a plug connection connecting the piezo element to the electrical conductors is disposed between the holding body and piezo element.