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43971 results about "Nanotechnology" patented technology

Nanotechnology ("nanotech") is manipulation of matter on an atomic, molecular, and supramolecular scale. The earliest, widespread description of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabrication of macroscale products, also now referred to as molecular nanotechnology. A more generalized description of nanotechnology was subsequently established by the National Nanotechnology Initiative, which defines nanotechnology as the manipulation of matter with at least one dimension sized from 1 to 100 nanometers. This definition reflects the fact that quantum mechanical effects are important at this quantum-realm scale, and so the definition shifted from a particular technological goal to a research category inclusive of all types of research and technologies that deal with the special properties of matter which occur below the given size threshold. It is therefore common to see the plural form "nanotechnologies" as well as "nanoscale technologies" to refer to the broad range of research and applications whose common trait is size.

Synergetic functionalized spiral-in-tubular bone scaffolds

An integrated scaffold for bone tissue engineering has a tubular outer shell and a spiral scaffold made of a porous sheet. The spiral scaffold is formed such that the porous sheet defines a series of spiral coils with gaps of controlled width between the coils to provide an open geometry for enhanced cell growth. The spiral scaffold resides within the bore of the shell and is integrated with the shell to fix the geometry of the spiral scaffold. Nanofibers may be deposited on the porous sheet to enhance cell penetration into the spiral scaffold. The spiral scaffold may have alternating layers of polymer and ceramic on the porous sheet that have been built up using a layer-by-layer method. The spiral scaffold may be seeded with cells by growing a cell sheet and placing the cell sheet on the porous sheet before it is rolled.
Owner:UNIV OF CONNECTICUT

Capillary electroflow apparatus and method

The present invention concerns an apparatus for conducting a microfluidic process. The apparatus comprises integral first and second plates. The first plate comprises an array of sample receiving elements for receiving a plurality of samples from an array of sample containers and dispensing the samples. The second plate comprises a planar array of microfluidic networks of cavity structures and channels for conducting a microfluidic process. Also disclosed is a method for processing an array of samples. At least a portion of each sample in an array of sample wells is simultaneously transferred to a corresponding array of microfluidic networks of cavity structures and channels by means of a corresponding array of sample receiving elements that is in integral fluid communication with the array of microfluidic networks. The samples are then processed. Also disclosed is a device for conducting a microfluidic process wherein the device comprising a planar substrate having a planar array of microfluidic networks of cavity structures and channels for conducting a microfluidic process. A plurality of such devices may be present on a continuous sheet. The invention further includes kits for carrying out microfluidic processes comprising an apparatus as described above.
Owner:ACLARA BIOSCIENCES INC

Silicon oxide film formation method

A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO2 film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N2 gas, NO gas, N2O gas, NO2 gas or the like) is added to oxygen atom containing gas (O2 gas, O3 gas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.
Owner:ANELVA CORP +1

Systems and methods of forming particles

The present invention generally relates to systems and methods of forming particles and, in certain aspects, to systems and methods of forming particles that are substantially monodisperse. Microfluidic systems and techniques for forming such particles are provided, for instance, particles may be formed using gellation, solidification, and / or chemical reactions such as cross-linking, polymerization, and / or interfacial polymerization reactions. In one aspect, the present invention is directed to a plurality of particles having an average dimension of less than about 500 micrometers and a distribution of dimensions such that no more than about 5% of the particles have a dimension greater than about 10% of the average dimension, which can be made via microfluidic systems. In one set of embodiments, at least some of the particles may comprise a metal, and in certain embodiments, at least some of the particles may comprise a magnetizable material. In another set of embodiments, at least some of the particles may be porous. In some embodiments, the invention includes non-spherical particles. Non-spherical particles may be formed, for example, by urging a fluidic droplet into a channel having a smallest dimension that is smaller than the diameter of a perfect mathematical sphere having a volume of the droplet, and solidifying the droplet, and / or by exposing at least a portion of a plurality of particles to an agent able to remove at least a portion of the particles.
Owner:PRESIDENT & FELLOWS OF HARVARD COLLEGE

Method for Forming Conformal Nitrided, Oxidized, or Carbonized Dielectric Film by Atomic Layer Deposition

A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.
Owner:ASM IP HLDG BV

Method for forming spacers using silicon nitride film for spacer-defined multiple patterning

A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.
Owner:ASM IP HLDG BV

Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films

The present invention discloses a process for depositing a carbon containing silicon oxide film, or a carbon containing silicon nitride film having enhanced etch resistance. The process comprises using a silicon containing precursor, a carbon containing precursor and a chemical modifier. The present invention also discloses a process for depositing a silicon oxide film, or silicon nitride film having enhanced etch resistance comprising using an organosilane precursor and a chemical modifier.
Owner:VERSUM MATERIALS US LLC

Method of depositing Ru films having high density

A ruthenium film deposition method is disclosed. In one embodiment of the method, a first ruthenium film is deposited by using a PEALD process until a substrate is substantially entirely covered with the first ruthenium film. Then, a second ruthenium film is deposited on the first ruthenium film by using a thermal ALD process having a higher deposition speed than that of the PEALD process. In the method, a ruthenium metal film having a high density is formed in a short time by combining a PEALD process of depositing a ruthenium film at a low deposition speed and a deposition process of depositing a ruthenium film at a higher deposition speed. Accordingly, it is possible to form a ruthenium film having high density, a smooth surface, good adhesiveness, and a short incubation period. Therefore, according to the embodiment, in comparison to cases of using only a PEALD process or an ALD process that has a long incubation period, it is possible to obtain a ruthenium film having a large thickness and a high density in the same time interval. As a result, the ruthenium film formed by the ruthenium film deposition method according to the embodiment is more suitable for electrode structures of semiconductor devices than the ruthenium films formed by using conventional methods.
Owner:ASM KOREA LTD

Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure

High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
Owner:APPLIED MATERIALS INC

Method for selectively depositing a metallic film on a substrate

A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.
Owner:ASM IP HLDG BV

Miniature support for thin films containing single channels or nanopores and methods for using same

Single-channel thin film devices and methods for using the same are provided. The subject devices comprise cis and trans chambers connected by an electrical communication means. At the cis end of the electrical communication means is a horizontal conical aperture sealed with a thin film that includes a single nanopore or channel. The devices further include a means for applying an electric field between the cis and trans chambers. The subject devices find use in applications in which the ionic current through a nanopore or channel is monitored where such applications include the characterization of naturally occurring ion channels, the characterization of polymeric compounds, and the like.
Owner:PRESIDENT & FELLOWS OF HARVARD COLLEGE +1

Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.
Owner:ASM IP HLDG BV

Glucose measuring assembly with a hydrogel

This invention relates to methods for reducing the presence of a compound in an ionically conductive material, e.g., for use in iontophoretic devices, wherein the presence of the compound interferes with detecting a selected analyte. Removal of the compound can typically take place either during or after the manufacture of the ionically conductive material or an assembly comprising this material. Also disclosed are methods for generating selectively permeable barriers on the reactive faces of electrodes. Further, this invention relates to hydrogels comprising one or more biocides, as well as assemblies containing such hydrogels.
Owner:LIFESCAN IP HLDG LLC +1

Controlled delivery of therapeutic agents by insertable medical devices

A medical device and method for transportation and release of a therapeutic agent into a mammalian body are disclosed. The medical device is coated with alternating layers of a negatively charged therapeutic agent and a cationic polyelectrolyte, following a controlled adsorption technique. The method is simple, with minimal perturbation to the therapeutic agent and uses clinically acceptable biopolymers such as human serum albumin. The amount of the therapeutic agent that can be delivered by this technique is optimized by the number of the layers of the therapeutic agent adsorbed on the surface of medical device. There is a washing step between alternate layers of the therapeutic agent and cationic polyelectrolyte carrier, so that the amount of the therapeutic agent on the insertable medical device represents the portion that is stably entrapped and adsorbed on to the medical device. The insertable medical device and method according to this invention are capable of reproducibly delivering therapeutic agent to a site in a mammalian body, and allow for a highly reproducible and controllable release kinetics of the therapeutic agent.
Owner:SCI MED LIFE SYST

Hydrogels and methods of making and using same

The invention is directed to methods of making novel porous and solid polyvinyl alcohol hydrogels. These hydrogels are particularly suited for use in the replacement and augmentation of soft tissue or non-load bearing bone of the face, head and cranium.
Owner:POREX CORP

Multi-array multi-specific electrochemiluminescence testing

Materials and methods are provided for producing patterned multi-array, multi-specific surfaces for use in diagnostics. The invention provides for electrochemiluminescence methods for detecting or measuring an analyte of interest. It also provides for novel electrodes for ECL assays. Materials and methods are provided for the chemical and / or physical control of conducting domains and reagent deposition for use multiply specific testing procedures.
Owner:MESO SCALE TECH LLC

Microparticle coated medical device

A drug-loaded microparticle is applied to a medical device for subsequent application to biological tissues. A method of formulating a drug-loaded microparticle and applying it to the surface of a medical device, such as a stent, is disclosed. The drug-loaded microparticle is formulated by combining a drug with various chemical solutions. Specified sizes of the microparticles and amounts of drug(s) contained within the microparticles may be varied by altering the proportions of the chemicals / solutions. In addition to various drugs, therapeutic substances and radioactive isotopes may also be loaded into the microparticles. The drug-loaded microparticle are suspended in a polymer solution forming a polymer matrix. The polymer matrix may be applied to the entire surface or only selected portions of the medical device via dipping, spraying or combinations thereof.
Owner:ABBOTT CARDIOVASCULAR

Intraluminal prostheses having polymeric material with selectively modified crystallinity and methods of making same

Methods of manufacturing polymeric intraluminal prostheses include annealing the polymeric material to selectively modify the crystallinity thereof. Annealing may be utilized to selectively modify various properties of the polymeric material of an intraluminal prosthesis, including: selectively increasing the modulus of the polymeric material; selectively increasing the hoop strength of the intraluminal prosthesis; selectively modifying the elution rate (increase or decrease) of a pharmacological agent subsequently disposed on or within the annealed polymeric material; selectively increasing / decreasing stress in the intraluminal prosthesis; and selectively modifying the polymeric material such that it erodes at a different rate.
Owner:SYNECOR LLC

Method for forming spacers using silicon nitride film for spacer-defined multiple patterning

A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.
Owner:ASM IP HLDG BV

Solvent-free process based graphene electrode for energy storage devices

PendingUS20140030590A1Inexpensive and durable and highly reliableHigh capacitanceMaterial nanotechnologyHybrid capacitor electrodesGraphene flakeSolvent free
Disclosed is an electrode for an electrochemical energy storage device, the electrode comprising a self-supporting layer of a mixture of graphene sheets and spacer particles and / or binder particles, wherein the electrode is prepared without using water, solvent, or liquid chemical. The graphene electrode prepared by the solvent-free process exhibits many desirable features and advantages as compared to the corresponding electrode prepared by a known wet process. These advantages include a higher electrode specific surface area, higher energy storage capacity, improved or higher packing density or tap density, lower amount of binder required, lower internal electrode resistance, more consistent and uniform dispersion of graphene sheets and binder, reduction or elimination of undesirable effect of electrolyte oxidation or decomposition due to the presence of water, solvent, or chemical, etc.
Owner:GLOBAL GRAPHENE GRP INC

Devices and methods for pattern generation by ink lithography

The present invention provides methods, devices and device components for fabricating patterns on substrate surfaces, particularly patterns comprising structures having microsized and / or nanosized features of selected lengths in one, two or three dimensions and including relief and recess features with variable height, depth or height and depth. Composite patterning devices comprising a plurality of polymer layers each having selected mechanical and thermal properties and physical dimensions provide high resolution patterning on a variety of substrate surfaces and surface morphologies. Gray-scale ink lithography photomasks for gray-scale pattern generation or molds for generating embossed relief features on a substrate surface are provided. The particular shape of the fabricated patterned can be manipulated by varying the three-dimensional recess pattern on an elastomeric patterning device which is brought into conformal contact with a substrate to localize patterning agent to the recess portion of the pattern.
Owner:THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS
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