3208 results about "Molecular physics" patented technology

An organic molecule is disclosed comprising:a first chemical moiety with a structure of formula I,andtwo second chemical moieties, each at each occurrence independently from another consisting of a structure of formula II,wherein the first chemical moiety is linked to each of the two second chemical moieties via a single bond.

The invention provides a wide bandgap semiconductor heteroepitaxial layer growth process parameter adjustment method and system, and relates to the technical field of semiconductors, and the method comprises the steps: obtaining substrate parameters, constructing a digital twin model, predicting an initial strain evolution trend, and determining an optimal initial process parameter; acquiring multi-source data through an in-situ ellipsometer, a reflective high-energy electron diffraction sensor and an acoustic emission sensor in the growth process, and calculating a strain tensor field and defect density distribution by adopting a deep neural network; layered progressive process parameter optimization is executed; and adjusting the growth process according to an optimization result. According to the method, accurate regulation and control of process parameters can be realized, the defect density is reduced, and the quality of the wide bandgap semiconductor heteroepitaxial layer is improved.

The invention discloses a process and a device for continuously synthesizing vitamin D3 through photocatalysis, and relates to the technical field of process on-line monitoring and intelligent control. Photochemical reaction requirements under raw materials with different concentrations are matched through multi-band illumination weight dynamic distribution; when the concentration of the 7-dehydrocholesterol fluctuates, the illumination ratio of 290nm to 305nm wavebands is adjusted in real time by a reinforcement learning algorithm, so that the conversion of a pre-vitamin D3 intermediate is more efficient, and the competitive consumption of a by-product path is reduced; the reaction retention time is further optimized through synchronous flow rate adjustment, and local excessive irradiation caused by sudden concentration increase is avoided; the environment temperature and humidity change is incorporated into a state vector, and the control module generates a compensation instruction accordingly; and if the humidity changes suddenly, pulse type flow compensation is triggered to counteract reaction efficiency attenuation. A closed-loop response mechanism reduces the dependence on physical temperature control equipment, and is especially suitable for mobile production scenes.

The invention relates to the technical field of quantum computing and molecular electronic devices, in particular to a probabilistic bit device based on polyfluoroaryl methyl free radicals and a preparation method of the probabilistic bit device. According to the probabilistic bit device, the coupling efficiency of molecules and electrodes is improved by virtue of the characteristic that the paramagnetic unpaired electron spin state of tri (polyfluoroaryl) methyl free radical molecules can be used as a random expansion physical entropy source and high electronegativity and stability formed by modification of a plurality of strong electron-withdrawing fluorine atoms in the molecules. During the operation period of the device, the spin fluctuation can efficiently regulate and control tunneling current passing through molecules, promote random conversion between output high and low current states, show excellent random binary fluctuation characteristics, and simultaneously have high sensitivity and long coherence time. Compared with the prior art, the device has remarkable advantages in the aspects of device stability, energy efficiency ratio and external field controllability. The preparation method is simple and convenient to operate, mild in reaction condition and beneficial to large-scale production.

The invention discloses a high-reliability PbS quantum dot film, a preparation method thereof and a photoelectric device. The preparation method comprises the following steps: 1) obtaining a first quantum dot solution; 2) adding medium-chain and long-chain amine; 3) adding an anti-solvent; 4) obtaining medium-chain and long-chain amine modified PbS quantum dot solids; 5) obtaining a second quantum dot solution; (6) forming a PbS quantum dot coating; 7) forming a mercaptan solution; 8) coating the PbS quantum dot coating with a mercaptan solution; (9) annealing treatment; 10) forming a new PbS quantum dot coating, and coating the new PbS quantum dot coating with a mercaptan solution; according to the PbS quantum dot thin film and the preparation method thereof, through the induction and synergistic effect of halogen atoms, the binding capacity of halogenated mercaptan ligands and the surface of the PbS quantum dot thin film is enhanced, the surface defect state of the PbS quantum dots is effectively inhibited, and the reliability of the PbS quantum dot thin film and a photoelectric device under the conditions of high temperature, high humidity and long-time illumination is remarkably improved.

The invention relates to an organic molecule for the application in optoelectronic devices. According to the invention, the organic molecule hasa first chemical moiety with a structure of Formula I:anda second chemical moiety with a structure of Formula II:wherein W is the binding site of a single bond linking the first chemical moiety to the second chemical moiety,L is selected from a direct bond and a linking group with a structure of Formula BN-I:wherein the dashed lines denote the binding sites as indicated in Formula I, and # represents the binding site of the first chemical moiety to the second chemical moiety.

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode which are stacked in sequence. The material of the hole transport layer comprises a biomolecular material which is fixed on a self-assembly monomolecular layer material through an intermolecular force, and the biomolecular material comprises one or more of guanine, adenine, thymine, uracil, cytosine, hydroxymethylcytosine, xanthine, hypoxanthine, 6-mercaptopurine and corrin. According to the perovskite cell provided by the invention, the biomolecular material with a plurality of nitrogen heterocyclic structures and amino groups is added to generate multipoint hydrogen-bond interaction and pi-pi accumulation with the tail end of the SAM, so that the orderliness of molecular arrangement is improved, and the dipole direction and strength of the whole interface are regulated and controlled; and a coordination bond or hydrogen bond network is formed by the coordination compound and uncoordinated cations or anions in perovskite, so that interface defects are effectively passivated, and the thermal stability and the humid and hot life of a device are enhanced.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a specific front surface structure and a cell assembly thereof, and the specific front surface structure comprises a tunneling oxide layer and a specific doped amorphous silicon layer which are sequentially arranged on the front surface of a silicon substrate, a low-doped amorphous silicon layer, a high-doped amorphous silicon layer and an oxygen-doped amorphous silicon layer are sequentially arranged in the specific doped amorphous silicon layer along the direction far away from the tunneling oxide layer, and the specific doped amorphous silicon layer is doped with a P element and contains an H element; the P doping concentration C1 of the low-doping amorphous silicon layer and the P doping concentration C3 of the oxygen-doping amorphous silicon layer are respectively smaller than the P doping concentration C2 of the high-doping amorphous silicon layer, and the specific front structure enables the back contact cell to absorb incident light within 400 nm, and the highest absorptivity exceeds 85%. The back contact battery disclosed by the invention can still keep good performance after being exposed to ultraviolet rays for a long time, the UV reliability of the battery is improved, meanwhile, high light transmittance is realized, and relatively high battery efficiency is also realized.

The invention discloses a silicon single crystal growth interface deformation detection method, system, equipment and medium, and relates to the technical field of silicon single crystal growth soft measurement modeling. Comprising the following steps: acquiring a process parameter set in a silicon single crystal production process; the process parameters in the process parameter set serve as nodes, mutual information indexes between the nodes serve as edges, and a graph structure model is constructed; performing multi-layer neighborhood aggregation operation on the graph structure model to obtain initial features; performing attention mechanism operation on the initial features to obtain aggregated features; and carrying out weighting operation on the aggregation characteristics by adopting a long-short-term memory network to obtain a deformation detection result of the silicon single crystal growth interface. According to the method, the modeling expressive power of a complex dynamic process is improved, and the sensitivity and the response speed of an abnormal deformation evolution trend are also remarkably enhanced.

The invention provides a method for detecting an external vesicle marker through high-flux nano plasma exciting light immune color development, and belongs to the technical field of human extracellular vesicles. After a serum sample is subjected to centrifugal treatment, the serum sample and a CD81 capture antibody substrate are incubated, and the particle size distribution of the vesicles is monitored in real time; a zwitterionic polymer modified gold nanoparticle LAM detection probe and a polyethylene glycol modified silver nanoparticle LprG detection probe are prepared to be specifically combined with a vesicle surface antigen, a chromogenic enhancement solution is adopted to induce a plasma resonance signal, and full-hole scanning imaging is carried out; and constructing a double-layer game optimization model to cooperatively optimize the detection sensitivity and the signal stability, carrying out weighted summation on normalized signals of the particle size subgroups to obtain comprehensive detection signal intensity, comparing the comprehensive detection signal intensity with a threshold value, and outputting a final judgment result. The technical problem that quantitative accuracy is affected by signal intensity deviation caused by vesicle particle size difference in outer vesicle marker detection is solved.

A system for controlling a translocation speed of a molecule through a nanopore may include a fluid chamber containing a solution with a magnetic susceptibility that is different from the magnetic susceptibility of the molecule, a nanopore situated in the fluid chamber, and at least one magnetic component configured to create a magnetic field gradient within the solution to control the translocation speed of a molecule through the nanopore. A system for controlling a translocation speed of a molecule through a nanopore may include a nanopore at least one magnetic component situated to create a magnetic field that causes the molecule to experience a rotational torque as it passes through the nanopore.

The invention belongs to the technical field of liquid crystal display, and discloses a multi-gray-scale cholesteric liquid crystal display device and a driving method thereof, according to the multi-gray-scale cholesteric liquid crystal display device and the driving method thereof, cholesterol liquid crystal of a pixel unit is controlled to be in a P state, an FC state and an intermediate stable state between the P state and the FC state through driving voltage, and the liquid crystal display effect is improved. And gray scale display of the pixel unit is realized. The driving time sequence of the bistable cholesterol liquid crystal is optimized, the proper driving voltage is selected, the cholesterol liquid crystal is controlled to be in an intermediate stable state through the driving voltage, and the display state of the cholesterol liquid crystal between the full-transmission state and the full-reflection state is increased, so that the gray scale number of the cholesteric phase display device is greatly increased on the premise that the number of sub-pixels is not increased, and the display effect of the cholesteric phase display device is improved. The display effect is improved.

The invention discloses an organic all-dielectric nonlinear metasurface based on a quasi-continuous domain bound state, the organic all-dielectric nonlinear metasurface is formed by periodically arranging a plurality of unit cell units, and each unit cell unit comprises a substrate layer, an intermediate dielectric layer and a resonant unit structure layer which are sequentially arranged from bottom to top, the cross section of the resonance unit structure layer is in an L shape, the L shape is a square surface without a rectangular angle, and the intermediate dielectric layer is made of an organic nonlinear material. By designing the organic all-dielectric nonlinear metasurface structure, the asymmetry degree of the resonance unit structure is changed, perfect absorption of fundamental frequency light and local enhancement of an electric field are achieved, the second harmonic generation efficiency is improved, and the problems that an existing metal nonlinear metasurface is low in damage threshold and low in second-order nonlinear conversion efficiency are solved.

The invention discloses an aggregation-induced emission near-infrared photothermal molecule as well as a preparation method and application of the aggregation-induced emission near-infrared photothermal molecule, and belongs to the technical field of biomedicine. The invention provides the preparation method of the aggregation-induced emission near-infrared photothermal molecule, the synthesis process is simple and efficient, and the obtained novel near-infrared photothermal molecule has better luminescence performance or photothermal performance of a near-infrared second region. Meanwhile, the near-infrared aggregation-induced emission protein nanoparticles provided by the invention are simple in preparation process and excellent in performance, and can effectively cross nasal mucosa and target an A beta plaque part, so that AD visualization and photo-thermal / hypoxia relief combined treatment are realized.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

The invention relates to a UCNPs probe-based in-situ dynamic monitoring molecular interaction method, which comprises: S1, providing a UCNPs probe, the core layer of the UCNPs probe being a rare earth up-conversion nanocrystal, the shell layer of the UCNPs probe being an anti-quenching inert material, and the anti-quenching inert material coating the surface of the rare earth up-conversion nanocrystal; the surface of the anti-quenching inert material is modified with ligand molecules, and the ligand molecules are used for being specifically combined with target molecules in a to-be-detected sample; s2, mixing or contacting the UCNPs probe with a to-be-detected sample containing target molecules to construct a to-be-analyzed molecular interaction system; s3, irradiating the molecular interaction system by adopting near-infrared pulse laser, and collecting the change of the fluorescence lifetime tau of the UCNPs along with the time t and the change of the fluorescence intensity I along with the time t in real time to obtain a tau-t curve and an I-t curve; and S4, according to the tau-t curve and the I-t curve, realizing in-situ dynamic monitoring on the molecular interaction state. According to the method, a molecular binding / dissociation event is directly converted into a quantifiable and anti-interference optical signal, and the technical defect that in-situ dynamic monitoring of molecular interaction cannot be achieved in a traditional technology is overcome.

The invention relates to the technical field of semiconductor photoelectrons, and discloses a vertical-cavity surface-emitting laser with an inverted structure and a preparation method of the vertical-cavity surface-emitting laser. The vertical cavity surface emitting laser with the inverted structure comprises a heterogeneous substrate, wherein a heat dissipation functional layer, a metal adhesion layer and a metal bonding layer are arranged on the surface of the heterogeneous substrate from bottom to top; the epitaxial structure comprises a p-type electrode, an ITO current expansion layer, a SiO2 current limiting layer, a first dielectric DBR layer, a p-type GaN layer, an electron blocking layer, a quantum well active region, an n-type GaN layer, a second dielectric DBR layer and an n-type electrode from bottom to top; and the p-type electrode is positioned at the bottom of the epitaxial structure and is bonded with the metal bonding layer to form an inverted structure. According to the vertical cavity surface emitting laser with the inverted structure provided by the invention, the heat dissipation function layer and the inverted structure design effectively improve the heat dissipation capability and the current uniformity of the device, and the service life, the performance stability and the reliability of the device are remarkably improved.

The invention discloses a bionic shaddock peel vibration reduction and energy absorption structure and a preparation method thereof, and relates to the technical field of aircrafts, a gradient chiral shaddock structure GCCS comprises a contact layer, a transition layer and a supporting layer, each layer comprises three bionic chiral shaddock structures, the three structures comprise a bionic chiral grapefruit structure-L type, a bionic chiral grapefruit structure-Q type and a bionic chiral grapefruit structure-D type. Three bionic shaddock peel dot matrix structures with porous characteristics and chiral spiral characteristics are created on the basis of a shaddock peel surface microstructure and chiral spiral characteristics existing at tendrils of natural climbing plants; the three bionic chiral grapefruit structures are combined into the gradient grapefruit chiral structure with negative honeycomb gradient change by reference to a macroscopic gradient strategy, and compared with a traditional lattice structure, the gradient grapefruit chiral structure is more excellent in mechanical bearing performance and vibration reduction performance.

The invention provides a semiconductor epitaxial growth parameter inversion method, a semiconductor epitaxial growth parameter inversion system, a semiconductor epitaxial growth parameter detection device and a related product, and relates to the technical field of semiconductor detection. The gas phase transmittance of a detection light path is further obtained, quantitative compensation is carried out on the actually measured reflection spectrum in the semiconductor epitaxial growth process, the compensated target reflection spectrum is closer to the real optical response of a semiconductor epitaxial film, and therefore spectral shape distortion and system errors caused by gas phase absorption superposition are effectively weakened. And the accuracy and the stability of the inverted growth parameters are obviously improved. Furthermore, the quantitative compensation value can be adaptively updated according to the fluctuation of the working condition, the inversion deviation introduced by the drift of the working condition is reduced, the consistency and comparability of the process are improved, and more reliable end point control and parameter closed-loop optimization can be conveniently realized.

This application relates to a monolithically integrated multi-wavelength topological cavity surface-emitting laser (PCSEL) array. According to one embodiment, a monolithically integrated PCSEL array includes multiple PCSELs formed from the same semiconductor layer, at least one layer of which is formed as a photonic crystal layer, or the laser also includes a separate photonic crystal layer. The photonic crystal layer includes multiple supercell structures, each with substructures having multiple independent one-dimensional parameters. At least two independent one-dimensional parameters of one or more substructures are modulated to be greater than or less than their equilibrium position to open the Dirac point of the supercell's bandgap at the equilibrium position. Around any point in the photonic crystal layer, the modulation of the two independent one-dimensional parameters of the supercell forms a vortex structure, which corresponds in parameter space to one or more turns around the equilibrium position. The supercell lattice constants of the two lasers can be different to emit lasers of different wavelengths.

The invention provides a method for analyzing femtosecond laser-induced damage behaviors on the surface of a Zn-doped KDP crystal, and belongs to the technical field of engineering optics based on computer data processing. The method comprises the following steps: firstly, respectively analyzing the influence of the Zn doping amount on the band gap and electroacoustic coupling of the KDP crystal through an ultraviolet-visible absorption spectrum and a Brillouin light scattering spectrum; then constructing a one-dimensional model, respectively simulating the electron density, lattice temperature and time evolution of electron temperature on the surface of the Zn-doped KDP crystal under femtosecond laser irradiation through an electron density accumulation rate equation and a double-temperature model, and theoretically analyzing the influence of the Zn doping amount on the damage behavior of the surface of the KDP crystal. And a theoretical model for calculating the femtosecond laser induced damage threshold is established, so that the optimal doping amount of Zn is determined in a lossless manner. A real sample is not contacted, so that the sample utilization rate is improved; the simulation process is more stable and controllable, and the data repeatability is high; and the research period can be shortened, and optimal doping amount screening is accelerated.

The invention relates to the technical field of liquid crystal devices, and particularly discloses a normally-on flexible liquid crystal dimming film and a preparation method thereof. The structure of the normally-on flexible liquid crystal dimming film sequentially comprises a first flexible transparent substrate, a first vertical alignment layer, a dye liquid crystal layer, a second vertical alignment layer and a second flexible transparent substrate from top to bottom, wherein the materials of the first vertical alignment layer and the second vertical alignment layer are selected from side chain type transparent polyimide materials; the dye liquid crystal layer comprises black dichroic dye and negative phase liquid crystal. By accurately controlling the orientation arrangement of liquid crystal molecules, a high-precision pretilt angle is realized, the light modulation amplitude in a visible light broadband range reaches 45% or above, and the photoelectric property is equivalent to that of a normally dark (forward) mode liquid crystal dimming film.

The invention relates to the technical field of microelectronics, in particular to a unimolecular memristor based on a viologen derivative and a preparation method of the unimolecular memristor. The unimolecular memristor based on the viologen derivative comprises an electrode pair and an organic functional molecule, and the organic functional molecule is selected from the viologen derivative and assembled between the electrode pair through an amide condensation reaction. According to the organic functional molecule provided by the invention, functional modification is performed on the basis of a viologen molecular structure, so that an energy barrier of reversible oxidation-reduction reaction of a viologen unit is effectively reduced, and the performance of the single-molecule memristor is remarkably improved; meanwhile, the on-off ratio of the device is also improved by one order of magnitude. According to the preparation method provided by the invention, the stability and repeatability of a monomolecular device can be ensured, and the conductive stability and durability of the molecular junction of the organic functional molecule are effectively improved. The method is simple and convenient to operate, reaction conditions are easy to control, and large-scale production of molecular devices is facilitated.

A gate structure is formed on a substrate at the junction of a well region and a drift region, the gate structure on the drift region is doped to form a first doped region and a second doped region which are adjacent to each other, the first doped region is doped with first type ions, and the second doped region is doped with second type ions; the conduction types of the second type ions and the first type ions are different, so that the first doped region and the second doped region form a reverse biased PN junction, an electric field caused by the interconnection structure can be balanced and dispersed in the direction from the drain electrode to the source electrode, and the high voltage of the interconnection structure can be effectively isolated; besides, the first doped region and the second doped region form a reverse-biased PN junction to disperse the high potential difference between the first doped region and the second doped region, so that the electric field intensity and the potential peak value on the surface of the device are effectively reduced, the segmented voltage division effect is beneficial to optimization of electric field distribution on the surface of the device, electric field concentration is reduced, and the performance of the device is improved. Therefore, the breakdown voltage of the semiconductor structure is improved.

The invention provides a laser crystal heterogeneous bonding method and an optical element, and relates to the technical field of laser, and the method comprises the steps: carrying out the ultra-precise surface treatment of the to-be-bonded surfaces of a laser crystal and a heterogeneous material based on the laser crystal and the heterogeneous material; respectively depositing at least one transition layer on the two to-be-bonded surfaces after surface treatment through a physical or chemical deposition method; the outermost layers of the two transition layers are made of the same material; carrying out ion beam activation treatment on the two surfaces to be bonded on which the transition layers are deposited so as to form high-activity surfaces; and aligning the two activated surfaces to be bonded in a vacuum environment at room temperature and applying pressure, and realizing room-temperature bonding through electrostatic force and chemical bond action to obtain a bonding body of the laser crystal and the heterogeneous material. According to the invention, thermal-mechanical property and chemical property differences among heterogeneous materials are overcome, and high-strength, low-stress and high-optical-quality bonding is realized.

The invention provides an electrostatic protection structure, a preparation method and an electrostatic protection circuit. The electrostatic protection structure comprises a substrate, a well region which is formed on the substrate and has a second doping type, a gate structure which is formed on the surface of the well region, and a drain region and a source region which are formed in the well region at two sides of the gate structure, the drain region at least comprises a first drift region with a first doping type, a first heavily doped region with the first doping type and a second heavily doped region with a second doping type, wherein the first heavily doped region and the second heavily doped region are formed in the first drift region at intervals; and the source region at least comprises a second drift region with the first doping type and a third drift region with the second doping type which are arranged at intervals, a fourth heavily doped region with the first doping type formed in the second drift region, and a fourth heavily doped region with the second doping type formed in the third drift region. A positive feedback loop is formed in the electrostatic protection structure, so that the amplified ESD current is discharged.

A crystal pulling method and system for fabricating a large-diameter silicon single crystal, and a silicon single crystal and a medium. The method can comprise: performing global two-dimensional simulation on a crystal pulling process, and acquiring a global temperature distribution, a velocity field distribution and an initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus and a preset crystal pulling parameter; on the basis of the global temperature distribution and the velocity field distribution, determining a boundary condition, and on the basis of the boundary condition, performing local three-dimensional simulation on the crystal pulling process to determine a target solid-liquid interface value; adjusting the preset crystal pulling parameter until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold range, and using the adjusted preset crystal pulling parameter as a reference crystal pulling parameter; on the basis of the reference crystal pulling parameter, simulating and calculating a simulated defect during the crystal pulling process; on the basis of the simulated defect, iteratively optimizing the reference crystal pulling parameter until the simulated defect meets a preset condition, and using the optimized reference crystal pulling parameter as a target crystal pulling parameter; and fabricating a defect-free silicon single crystal.

The invention belongs to the technical field of liquid crystal alignment agents, and particularly relates to a liquid crystal alignment agent, a liquid crystal alignment film and a liquid crystal display element. The liquid crystal alignment agent comprises polyamic acid, a main chain of the liquid crystal alignment agent contains short side chain diamine and carbonate bonds, the short side chain diamine can slow down direct collision between film surfaces, carbonyl on a short side chain enhances absorption of ultraviolet light, and the compressive strength of a liquid crystal alignment film and the cracking alignment performance of the liquid crystal alignment film are improved; the carbonic ester bond can improve the voltage holding rate thermal stability of the liquid crystal alignment film and can improve the anchoring force of the liquid crystal alignment film and liquid crystals, the liquid crystal alignment agent with high compressive strength, voltage holding rate, high thermal stability and low linear polarization ultraviolet exposure is finally obtained, the stability of the high voltage holding rate improves the residual image of a display device, and the display effect is improved. And due to high compressive strength, the undesirable phenomenon of ZARA of the liquid crystal display device can be reduced.

The invention relates to the technical field of photoinitiators, and provides a triplet-triplet energy transfer (TTET) free radical I type photoinitiation system, a photocuring composition and application thereof. The system comprises a boron dialkylated dipyrromethene free radical I type photoinitiator and a long wave absorption photosensitizer, the photosensitizer is preferably an osmium (II) complex, and the mass ratio of the photosensitizer to the photoinitiator is preferably 1: 5-1: 200. Under the irradiation of a 650-750 nm light source (preferably a 690 nm LED), the photosensitizer enters a triplet state through intersystem crossing and generates TTET to the photoinitiator, so that the photoinitiator is uniformly split in the triplet state to generate free radicals, thereby initiating polymerization / cross-linking curing of monomers such as (methyl) acrylate and the like. The embodiment shows that the double bond conversion rate of the TPGDA can reach more than 80% within 10 minutes under the conditions of LED at 690 nm and 80 mW / cm < 2 >.

A long-persistent luminescence emitter containing a polymer that contains, relative to the total molar amount of an electron donor structural unit and an electron acceptor structural unit therein, 70 mol % or more of an electron donor structural unit and less than 30 mol % of an electron acceptor structural unit, or containing a polymer that contains, relative to the total molar amount of an electron donor structural unit and an electron acceptor structural unit therein. 70 mol % or more of an electron acceptor structural unit and less than 30 mol % of an electron donor structural unit. The emission decay after stopping light irradiation to the emitter is power law decay.