9 results about "Lattice defects" patented technology

This invention provides a highly efficient method for separating or concentrating lattice defect-containing nanoparticles (NDs). [Solution] A method for separating or concentrating lattice defect-containing ND particles, comprising irradiating a dispersion containing at least two types of ND particles selected from nanodiamond (ND) particles having at least one type of lattice defect and ND particles without the lattice defect with at least one type of excitation laser light having an energy greater than or equal to the resonance absorption energy of the lattice defect and at least one type of stimulated emission laser light, thereby selectively moving the ND particles having the lattice defect by the absorption optical pressure generated by the absorption of at least one type of excitation laser light and the stimulated recoil force generated by the action of at least one type of stimulated emission laser light, wherein the excitation laser light transitions electrons in the ground state of the ND particles to an excited state, and the stimulated emission laser light transitions electrons in the excited state to the ground state faster than spontaneous emission to generate stimulated recoil force.

The invention discloses a volatile threshold switching device based on an atomic-scale geometric confinement layer and a preparation method thereof. The device comprises a substrate layer, a bottom electrode layer, a functional active layer, a geometric confinement layer and a top electrode layer which are stacked in sequence, the functional active layer is used for providing active metal ions to form conductive filaments; the functional active layer is made of a two-dimensional layered ferroelectric material; the geometric confinement layer is made of hexagonal boron nitride sheets, and the thickness range of the hexagonal boron nitride sheets is 1-5 hexagonal boron nitride atomic layers. According to the invention, the h-BN material with atomic-scale lattice defects is introduced as the geometric confinement layer, and the diameter of the conductive filament formed by copper ions in the functional active layer is physically limited by using the atomic-scale ion sieve effect of the h-BN material, so that the problem of failure caused by overgrowth of the filament in a traditional device is solved.

The invention relates to the technical field of gallium tetrachloride, in particular to a stable gallium tetrachloride crystal material and a preparation method thereof, the crystal is a triclinic system, the space group is shown in the specification, the crystal structure is a zero-dimensional GaCl4 tetrahedral cluster structure, and Ga < 3 + > and four Cl <-> form edge shared tetrahedral coordination. The stable gallium tetrachloride crystal material has a regular triclinic system structure, accurate and controllable lattice parameters, uniform Ga-Cl bond length and bond angle distribution and no obvious lattice defect, the chemical stability and the thermal stability of the crystal are remarkably improved, the hydrolysis rate is low in a normal-temperature and high-humidity environment, the crystal is not easy to decompose at a high temperature, and the application requirements under extreme working conditions can be met.

Method for localizing charge traps in a crystal lattice comprising the following steps: - Arrange, on a crystal lattice (13), a local probe (11) with an inversion-symmetric lattice defect, wherein energy levels of the lattice defect are non-linearly strongly displaceable by means of charge traps (12) in the crystal lattice (13); - Determining strongly shifted photoluminescence emission spectra (62) using a readout unit (10), wherein each of the photoluminescence emission spectra (62) is determined in a respective scanning operation by means of photoluminescence excitation in the crystal lattice (13); - Determining an integrated spectrum (61) by integrating the photoluminescence emission spectra (62); - Determining jump probabilities (92) from successive photoluminescence emission spectra (62) and determining a charge trap configuration from the jump probabilities (92), wherein the charge trap configuration comprises a set of charge trap states of charge traps (12) adjacent to the local probe (11); - Determining simulated spectra (60) using Monte Carlo simulation based on the determined charge trap configuration and the resulting Stark shift, whereby spatial arrangements of the neighboring charge traps (12) are varied and - Determining an optimal spatial arrangement of the adjacent charge traps (12) by comparing the integrated spectrum (61) with the simulated spectra (60).

The application discloses a preparation method of a quantum dot light-emitting device based on an ion additive, utilizes single halogen Br to synthesize CsPbBr3 metal halide perovskite quantum dot material, and fundamentally avoids inherent problems caused by mixed halogen perovskite nanocrystal material, i.e. halogen phase separation under an electric field. By adding an ion additive, i.e. (2-bromoethyl)diphenyl sulfonium trifluoromethane sulfonate, into the quantum dot, as a kind of anion and cation ligand, the ion additive is strongly combined with the perovskite quantum dot surface and fills the lattice defects on the perovskite quantum dot surface, so that the quantum dot is provided with a more perfect lattice structure and stronger surface stability, defect-induced non-radiation recombination and spectrum shift caused by ripening are effectively inhibited, and the LED device prepared based on the perovskite quantum dot has higher light-emitting efficiency and operation life.

This invention provides a metal halide dual-mode luminescent material and its rapid microwave synthesis method, belonging to the field of luminescent material technology. Through precise ion doping design and controllable synthesis process, the metal halide dual-mode luminescent material of this invention achieves excellent luminescent performance, integrating up-conversion and down-conversion luminescence capabilities in the same system. It can be used in fields such as multi-mode optical anti-counterfeiting, information encryption, and integrated bio-imaging and diagnosis. The rapid microwave synthesis method is efficient and controllable, avoiding component volatilization and lattice defects caused by high-temperature and long-term processing. It achieves atomic-level uniform doping, has good process repeatability, is suitable for large-scale preparation, and meets the requirements of green synthesis and low-cost manufacturing.

The invention provides a high-entropy spinel oxide synthesized by a carbon thermal shock method as well as a preparation method and application thereof, and relates to the technical field of high-entropy spinel oxides. According to the method, calcining treatment is carried out by adopting a carbon thermal shock method, so that the Oswald curing process of crystal grains in the preparation process can be effectively inhibited, and after metal atoms form a high-entropy single phase, no enough time is provided for surface migration and crystal grain growth, so that a nano material with relatively small crystal grain size is obtained, and abundant surface active sites are provided for gas-solid reaction. Secondly, due to the non-equilibrium and non-steady-state characteristics of the carbon thermal shock process, the high-temperature instantaneous state of the material is'frozen 'in the shock cooling process, a large number of non-thermodynamically-balanced lattice defects, especially oxygen vacancies, are easily introduced, and meanwhile, the local reducing atmosphere of the carbon substrate can also promote formation of the oxygen vacancies.

The present application belongs to the technical field of temperature measurement, especially high-temperature temperature measurement, and specifically provides a defect construction method of C-axis preferred orientation AlN film for high-temperature temperature measurement, to improve temperature interpretation accuracy. The present application uses a medium-frequency reactive magnetron sputtering method to realize the preparation of C-axis preferred orientation AlN film, and in the sputtering process, uniform and controllable lattice defects are constructed in the C-axis preferred orientation AlN film through the method of active gas doping. The lattice defect construction method provided by the present application is simple in process, good in stability and repeatability, does not need neutron irradiation, and is low in cost. The C-axis preferred orientation AlN film with uniform and controllable lattice defects as a temperature sensitive material can realize high-temperature temperature measurement and improve temperature interpretation accuracy.

The invention discloses a VC / Al2O3 / FeCoNi phase derived in-situ composite material as well as a preparation method and application thereof, and belongs to the field of electromagnetic wave absorbing materials. The invention aims to solve the problem of how to enhance the magnetic dielectric effect and interface polarization of the MAX phase derivative in electromagnetic attenuation. Iron, cobalt and nickel magnetic metal elements are introduced into MAX phase derived vanadium carbide by a solid-phase reaction method and a molten salt method, the VC / Al2O3 / FeCoNi composite wave-absorbing material with a layered structure is synthesized, and all the magnetic metal elements are uniformly distributed in layered VC with lattice defects. The VC / Al2O3 / FeCoNi composite material prepared by the method disclosed by the invention has a heterogeneous interface structure and abundant vacancy defects, and the unique structural design synchronously realizes triple effects of enhancing magnetic loss, introducing abundant interface polarization and optimizing impedance matching. The invention excavates the potential of the MAX phase derivative in the field of electromagnetic attenuation.