56results about How to "Uniform film quality" patented technology

To provide a porous-film layered product which has excellent porousness, has flexibility, and is excellent in handleability and formability; and a process for producing the layered product. [MEANS FOR SOLVING PROBLEMS] The porous-film layered product comprises a base and, superposed on at least one side thereof, a porous layer having many fine interconnecting pores having an average pore diameter of 0.01-10 [mu]m, and is characterized by suffering no interfacial separation between the base and the porous layer when examined in a tape peeling test by the following method. Tape peeling test A 24 mm-wide masking tape [Film Masking Tape No. 603(#25)] manufactured by Teraoka Seisakusho Co., Ltd. is applied to the surface of the porous layer of the porous-film layered product and press-bonded thereto with a roller having a diameter of 30 mm and a load of 200 gf. Thereafter, this sample is subjected to a T-peel test with a tensile tester at a peeling rate of 50 mm/min.

A Group III nitride compound semiconductor thin film which can be deposited on any given substrate to have uniform film quality and excellent crystalline, and a deposition method thereof. A semiconductor device and a manufacturing method thereof. A poly-crystalline Group III nitride compound thin film is deposited on a substrate by sputtering at a deposition rate of 15 to 200 nm/hour using a Group III nitride compound target in a plasma atmosphere of gas comprising 10 mole % or more nitrogen. Then, the poly-crystalline Group III nitride compound semiconductor thin film deposited on the substrate is irradiated with an excimer pulsed laser with an energy-density of about 200 mJ/cm2, in an atmosphere of gas with an oxygen content of 2 mole % or less. Thereby, lattice defects such as grain boundaries or dislocations which occur in the thin film are removed.

Disclosed is a method of manufacturing a semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode. When the capacitive insulating film is formed by performing a first step of forming a first dielectric layer on the bottom metal electrode by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric; and a second step of forming a second dielectric layer on the first dielectric layer by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, a film forming temperature in the first step is set so as to be lower than a film forming temperature in the second step.

The invention provides a sputtering apparatus capable of preventing any non-erosive area from remaining on a target, and depositing a film of a uniform quality when performing the responsive sputtering. The sputtering apparatus 2 has at least four targets 241 arranged side by side at predetermined intervals in a vacuum chamber 21, and AC power sources E connected to two targets one by one out of the targets arranged side by side so as to alternately apply the negative potential and the positive potential or the grounding potential thereto, and each AC power source E is connected to the two targets 241 not adjacent to each other.

The present invention provides a plasma treatment apparatus which has a plurality of UR-type plasma guns including reflected electron return electrodes, and can stably form a film having uniform film thickness and film quality. A plasma treatment apparatus according to one embodiment of the present invention sets an electric potential of at least one UR-type plasma gun at a floating potential. In one embodiment of the present invention, all UR-type plasma guns may be set at floating potentials. In other embodiment of the present invention, only one UR-type plasma gun may be grounded, and the other UR-type plasma guns may be set at floating potentials.

A radical source is movably provided in a processing vessel holding a substrate, and the location or driving energy of the radical source is set such that the film formed on the substrate has a uniform thickness. Further, a radical source is provided at a first side of the substrate and a radical flow is formed such that the radical flow flows from the first side of the substrate surface to the other side. By optimizing the condition of the radical flow, the film formed on the substrate has a uniform thickness.

The invention belongs to the technical field of display, and particularly relates to photodiffusion powder, a preparation method of the photodiffusion powder, quantum dot photoresist and a quantum dot color film.The preparation method of the photodiffusion powder comprises the steps that alkoxy silane is subjected to a cohydrolysis condensation reaction under the acidic condition or the alkaline condition, and the photodiffusion powder is obtained.The quantum dot photoresist made of the photodiffusion powder and the quantum dot color film are further disclosed.The photodiffusion powder has an organic chain segment structure and an inorganic structure, and is good in compatibility with all kinds of components in a quantum dot photoresist system, a good dispersion effect is achieved, and the uniformity of the photoresist is increased.The quantum dot color film made of the quantum dot photoresist is even in film quality and high in light utilization rate.

The invention discloses a method for preparing an amorphous indium tin oxide thin film, which comprises the following steps: providing a substrate; and placing the substrate in a cavity of a magnetron sputtering device; Argon-hydrogen mixed gas with a content of 1% to 3% is used as the process gas, and indium tin oxide is used as the target material, the temperature of the substrate is controlled to be -50°C to 100°C, and magnetron sputtering is performed on the substrate An amorphous indium tin oxide film is deposited. The preparation method of this amorphous indium tin oxide thin film adopts the indium tin oxide target material (mass ratio of indium oxide is 85%~93%) used in the conventional crystalline indium tin oxide film, and the volume of hydrogen gas is used in the indium tin oxide coating process The argon-hydrogen mixed gas with a percentage content of 1% to 3% is the process gas. The hydrogen has good dispersibility and is conducive to uniform distribution. There is no need to add expensive testing equipment to monitor the water pressure. The prepared amorphous indium tin oxide film is excellent. stability.

A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.

A sputtering apparatus which does not spoil the non-corrosive area on the target and gives uniform film during the reactive sputtering process is disclosed. The sputtering apparatus 2 comprises:(a) supplying a space to set more than three targets 241 in the vacuum chamber 21. (b)using alternating current power supply E1~E3 to alternatively charge each target 241 with negative potential and positive potential or with the ground potential, which is characterized by using at least one of branched outputs of the alternating current power supply E1~ E3 to connect more than two of targets 241, and placing the switches SW1~ SW3 which are the switches to control charging potential to targets from alternating current supply between targets 241 connected by branched outputs.

A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; depositing an ITO layer at a temperature of about 20-35° C.; etching the ITO layer to form a data line and a drain electrode on the gate insulating layer; and forming an organic semiconductor on the data line, the drain electrode, and the gate insulating layer.

The die as provided is a die in which an upper block is placed on an upper surface of a lower block with a lower surface of the upper block in contact with the upper surface, wherein the lower block includes a manifold and a slit serving as a path for discharging paint from the manifold to the outside, constituted respectively from between the lower block and the lower surface of the upper block by forming a cavity and a space which communicates with the outside from this cavity along a columnar direction, respectively, from one end face of a columnar body with a trapezoidal shape of cross section to the other end face, a paint supply path which communicates with the manifold is formed from an outer side located between the one end face and the other end face of the lower block, a slit space dimension of the slit between front end portions in a paint discharge direction of the lower block and the upper block in a discharge port serving as an open end to the outside is smallest on the one end face side and increases toward the other end face side, and a slit length which is a dimension along the paint discharge direction of a space forming surface of the lower block constituting the slit is largest on at least one of the one end face side and the other end face side and is smallest in a position between both the end faces.

A plasma processing method is provided. In the plasma processing method, a plurality of types of mixed gases is supplied to a plurality of areas on a film deposited on a surface of a substrate. The plurality of types of mixed gases contains a plurality types of noble gases. The plurality of types of mixed gases has different mix proportions of the plurality types of noble gases from each other. The plurality of types of mixed gases is converted to plasma. A plasma process is performed by using the mixed gases converted to the plasma on the film.

The invention discloses a preparation method of a biferroelectric bismuth ferrite/bismuth vanadatephotoelectrochemical film. The method comprises the following steps: 1) performing FTO pretreatment; 2) dissolving bismuth nitrate pentahydrate and potassium iodide in water, and adding metal salt ions and nitric acid to adjust the pH value; 3) dissolving p-benzoquinone in ethanol; 4) mixing the two,and performing electrochemical deposition to obtain a film electrode; and 5) dropwise adding dimethyl sulfoxide in which ferrous acetylacetonate and vanadylacetylacetonate are dissolved into the filmelectrode obtained in the step 4), and carrying out high-temperature heat treatment in a tubular furnace to obtain the biferroelectric doped bismuth ferrite/bismuth vanadatefilm. According to the preparation method of the biferroelectric bismuth ferrite/bismuth vanadatephotoelectrochemical film, the preparation method is simple and easy to implement, the requirement for the size and shape of a bottom electrode is low, the film is uniform in quality, large in specific surface area, accurate in stoichiometric ratio, excellent in photocatalytic performance and high in water photolysis efficiency,and doping modification research is easy to carry out.

The invention relates to a liquid crystal alignment agent and a liquid crystal display element with the object to provide a liquid crystal alignment film making the film components evenly distributed and having improved electrical characteristics and heat resistance and an improved liquid crystal alignment agent as well. The liquid crystal alignment agent comprises at least a polymer chosen from a group consisting polyamide and polyamide imide; the molecule constituting the polymer contains at least one part of a radical group represented by (A') ; in the (A') of the formula RI-(XI)n1-RII-O-XII-COO-(RIIIO)n2-*(A'), R1 represents alkyl with 1-30 carbon atoms or fluroalkyl with 1-30 carbon atoms; RII represents for a single bone, a methylene or an alkylene with 2-30 carbon atoms; RIII represents for an alkylene with 2-5 carbon atoms; XI and XII represent respectively for a two valent alicyclic radical, a two valent heterocyclic radical, a sub-aryl or a two velent miscellaneous aromatic radical; the plural XI radical groups can either be identical or different; n1 represents for an integer of 2-5; n2 represents for an integer of 0-10; "*" represents for a connecting bond.