1344results about How to "Stable manufacturing" patented technology

A semiconductor device has through electrodes with property as an electrode and excellent in manufacturing stability. The through electrode composed of a conductive small diameter plug and a conductive large diameter plug is provided on the semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area of a connection plug and its diameter each, and the cross sectional area of the small diameter plug is made smaller than a cross sectional area of the large diameter plug and its diameter each. Further, a projecting portion where the small diameter plug is projected from a silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect.

The present invention provides a microphone device with good frequency characteristics. The microphone device can pick up sound faithfully. In detail there is provided a microphone device comprising a microphone element, a signal processor, and a cover disposed over the microphone element and the signal processor, the cover including a mesh structure occupying 25% or more of at least one surface of the cover.

The present invention relates to an organic electroluminescent device. There is provided an organic electroluminescent device with a good luminescence property and high luminous efficiency in which the organic electroluminescent device has a diffraction grating 2 on the surface of the substrate 1 and an organic EL layer 5 including an emission layer between an anode 4 an a cathode 6 via an intermediate layer 3.

To provide a porous-film layered product which has excellent porousness, has flexibility, and is excellent in handleability and formability; and a process for producing the layered product. [MEANS FOR SOLVING PROBLEMS] The porous-film layered product comprises a base and, superposed on at least one side thereof, a porous layer having many fine interconnecting pores having an average pore diameter of 0.01-10 [mu]m, and is characterized by suffering no interfacial separation between the base and the porous layer when examined in a tape peeling test by the following method. Tape peeling test A 24 mm-wide masking tape [Film Masking Tape No. 603(#25)] manufactured by Teraoka Seisakusho Co., Ltd. is applied to the surface of the porous layer of the porous-film layered product and press-bonded thereto with a roller having a diameter of 30 mm and a load of 200 gf. Thereafter, this sample is subjected to a T-peel test with a tensile tester at a peeling rate of 50 mm/min.

The invention discloses a graphene oxide/polystyrene nano composite and a preparation method thereof. The preparation method includes preparing a graphene oxide nanosheet; using graphene oxide as a solid surfactant to obtain stable Pickering emulsion under actions of coordination and stabilization of salt; and polymerizing the in-situ emulsion to obtain the graphene oxide/polystyrene nano composite. The specific steps of the preparation method include oxidizing natural flake graphite by oxidants to obtain graphite oxide, carrying out ultrasonic exfoliation and centrifugal separation to obtain graphene oxide, adding the graphene oxide into salt solution and stirring the mixed solution to form a uniform dispersed system containing the graphene oxide and salt; and adding styrene into the dispersed system, carrying out ultrasonic treatment to obtain the stable Pickering emulsion, adding initiators into the Pickering emulsion, stirring and polymerizing to obtain the graphene oxide/polystyrene nano composite. The preparation method is good in repeatability, has the advantages of mild reaction conditions, low energy consumption and easiness in operation and brings convenience for industrialized implementation.

A method of preparing silica aero-gel powders having a short preparation time and stable preparation processes. In the method, the silica aerogel powders are generated by using a water glass solution, an inorganic acid, an organosilane compound and an organic solvent. The method includes dispersion-solution generating, gelating and solvent exchanging and drying. In the dispersion-solution generating, a dispersion solution is generated by dispersing the water glass solution and the organosilane compound in the organic solvent. In the gelating and solvent exchanging, silica hydrogel is generated by adding the inorganic acid to the dispersion solution and simultaneously performing gelating and solvent-exchanging. In the drying, the silica aerogel powders are generated by drying the silica hydro-gel.

A multilayered wiring board has electrodes disposed on a first surface and a second surface, alternately layered insulation layers and wiring layers, and vias that are disposed in the insulation layer and electrically connect the wiring layers. The second electrode disposed on the second surface is embedded in the insulation layer exposed on said second surface, and the second wiring layer covered by the insulation layer exposed on said second surface does not have a layer for improving adhesion to the insulation layer.

The invention provides a method for preparing a perovskite solar cell on the basis of a two-dimensional material graphene-phase carbon nitride. The graphene-phase carbon nitride is doped into a perovskite precursor solution to prepare the perovskite solar cell. The method has the following advantages that (1) the raw material required for synthesis of the material is low in cost, and the product is small in toxicity; (2) solvent volatilization during the annealing process is effectively slowed down, so that a perovskite thin film crystal is more uniform and compact; (3) the grain crystal sizeof a perovskite layer is increased, a crystal boundary easy to combine with charge is effectively reduced, and the filling factor of a device is improved; (4) a surface of the perovskite thin film ispassivated, and the hysteresis phenomenon of the device is effectively improved; and (5) the conductivity of the surface of the perovskite thin film is improved, the contact resistance of the interface is reduced, and the short-circuit current of the device is increased. The preparation process is simple and convenient and is low in preparation difficulty; by doping of the graphene-phase carbon nitride, the smoothness and the uniformity of the perovskite thin film can be effectively improved; and by a series of gradient doping, the device performance is remarkably changed.

The invention relates to a lithium negative electrode with a functional protective layer and a lithium sulfur battery. The lithium negative electrode is provided with a functional protective layer which is coated on the surface and includes a conductive polymer. In the lithium sulfur battery, the functional protective layer of the lithium negative electrode is contacted with an electrolyte, so that a stable interface is formed between the electrolyte and a base body of the lithium negative electrode.

A method of manufacturing an electrophotographic seamless belt, includes setting a substantially cylindrical preform made of a thermoplastic resin mixture containing a thermoplastic resin and having an outer diameter “a”, in a seamless belt molding die including a cylindrical cavity having an inner diameter “b”, and stretch blow molding at a predetermined stretch temperature T1 to obtain a stretch-blow-molded part; and cutting the stretch-blow-molded part to obtain a seamless belt. The thermoplastic resin mixture has a temperature T2 at which a parameter S/P calculated from a tensile-stress to strain curve obtained by performing a JIS K7161 test on a sheet test piece made of the thermoplastic resin mixture is 2.0 to 15.0 T2 is set as the predetermined stretch temperature T1. P indicates stress when a stretch magnification is 0.6×(b/a) and S indicates stress when the stretch magnification is 1.6×(b/a) and (b/a)≧1.7.

The invention discloses a nitrogen-doped activated carbon supported noble metal catalyst and an application thereof. The catalyst is composed of a carrier and an active component; the carrier is nitrogen-doped activated carbon; the active component is one of palladium, platinum, rhodium, ruthenium and iridium; and the load of the active component is not higher than 15wt% based on the mass of the carrier. The invention provides the application of the nitrogen-doped activated carbon supported noble metal catalyst to reaction for preparing an alkyl-containing halogenated aromatic aminocompound shown as a formula (II) by carrying out catalytic hydrogenation reduction on an alkyl-containing halogenated aromatic nitrocompound shown as a formula (I) to show that the nitrogen-doped activated carbon supported noble metal catalyst has the characteristics of high hydrogenation reaction rate, high catalytic activity, high selectivity and high stability.

The invention discloses a method for preparing magnetic composite nanoparticles with a core-shell structure. In the method, electrostatic self-assembly and seeded emulsion polymerization are combined, wherein the electrostatic self-assembly is used to synthesize particles with the core-shell structure first and then emulsion polymerization is performed by using the particles with the core-shell structure seeds and using an initiator to prepare the magnetic composite nanoparticles with the sandwich core-shell structure which has three or more layers. The magnetic composite particles prepared by the method have a multi-layer sandwich core-shell structure, wherein in the structure, the core is a polymer microsphere, a Fe3O4 magnetic particle layer is in the middle, and different polymer layers are covered outside. The prepared particles have stable structures, strong and uniformly-distributed magnetism, smooth surfaces, controllable sizes, high stability and low cost, the thicknesses of the covering layers of the prepared particles can be controlled by nanoscale, and the adaptability of the prepared particles is high. Particles with specific surface groups can be prepared according to requirements and can be used in fields of biochemical separation, targeting preparation, immobilized enzyme, immunoassay, catalysis study and the like.

The invention relates to the field of Ti-based amorphous composite materials, in particular to the design and preparation method of endogenous toughness β-Ti solid solution reinforced Ti-based amorphous composite materials. The composition of the composite material is (atomic percentage) TiaAbBcBed, wherein: A is one or several elements of Zr, Nb, Ta, Mo, V, and W, and B is one or several elements of Cu, Ni, Fe, and Co. species, a=30-65; b=26-38; c=1-25; d=0-25. The toughness β-Ti solid solution reinforced Ti-based amorphous composite material with different volume fractions is obtained by adjusting the alloy composition, the size of the β-Ti solid solution is 1-200 μm, and the volume fraction is 0-100. The composite material exhibits excellent comprehensive mechanical properties, and has a certain degree of plastic deformation behavior while having high strength. The compressive yield strength is 1000-1900MPa, the compressive breaking strength is 1200-2300MPa, and the compressive strain is 2-20%; the tensile yield strength of the composite material is 1000-1900MPa, the tensile breaking strength is 1200-2000MPa, and the tensile strain is 2 -20%. It plays an important role in the application of Ti-based amorphous composite materials.

A semiconductor device with reduced parasitic capacitance is provided. The semiconductor device includes a first insulating layer; a first oxide layer over the first insulating layer; a semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer over the semiconductor layer; a second insulating layer over the first insulating layer; a third insulating layer over the second insulating layer, the source electrode layer, and the drain electrode layer; a second oxide layer over the semiconductor layer; a gate insulating layer over the second oxide layer; a gate electrode layer over the gate insulating layer; and a fourth insulating layer over the third insulating layer, the second oxide layer, the gate insulating layer, and the gate electrode layer.

The invention provides a vertical continuous preparing device for carbon nano tube fibers. The vertical continuous preparing device comprises a carbon source injector, a tube furnace and a collecting box communicated with the tube furnace. The carbon source injector comprises a carbon source injection pump, a carbon source injection tube, a carbon source conveying tube and a flow limiting part, wherein one end of the carbon source injection tube is located in the tube furnace, the carbon source injection pump and the carbon source injection tube are communicated through the carbon source conveying tube, and the flow limiting part is arranged between the carbon source conveying tube and the carbon source injection tube. The carbon source injection pump injects a liquid-phase carbon source into the tube furnace through the carbon source conveying tube and the carbon source injection tube, a carbon source injection tube core is further arranged in the carbon source injection tube, one end of the carbon source injection tube core is arranged in the flow limiting part, and the other end of the carbon source injection tube core protrudes and stretches out of the carbon source injection tube. Compared with the prior art, the carbon source injector which is simple in structure and low in cost is adopted so that the liquid-phase carbon source can be uniformly injected and gasified, and finally the purpose of stably and continuously preparing the carbon nano tube fibers is achieved.

A manufacturing method of a Ta sputtering target in which a Ta ingot or billet formed by melting and casting is subject to forging, annealing, rolling processing and the like to prepare a sputtering target, wherein the ingot or billet is forged and thereafter subject to recrystallization annealing at a temperature of 1373K to 1673K. As a result of improving and devising the forging process and heat treatment process, the crystal grain diameter can be made fine and uniform, and a method of stably manufacturing a Ta sputtering target superior in characteristics can be obtained thereby.

Disclosed is a microporous laminated membrane including a nonwoven-fabric substrate and a microporous membrane. The microporous membrane is disposed on at least one side of the nonwoven-fabric substrate. The microporous membrane includes a multiplicity of interconnecting micropores. The micropores have an average pore diameter of from 0.01 to 10 μm. The microporous membrane has an arithmetic mean surface roughness Sa of 0.5 μm or less. The microporous laminated membrane has an air permeability of from 0.5 to 30 seconds. The microporous laminated membrane has a tensile strength of 4.0 N/15 mm or more. The microporous laminated membrane does not undergo interfacial peeling between the substrate and the microporous membrane as a result of a tape peel test.

In a card-making method and system, an authentication card is made from a raw card having a readable and writable information-storing portion formed therein, by forming the image on the front surface and/or back surface of the raw card and writing individual authentication information in the information-storing portion. Processing information of the raw card is written in the information-storing portion. The image is formed based on the processing information read from the information-storing portion. Individual authentication information of the authentication card is written in the information-storing portion after forming the image. In a heat treatment mechanism for cards, heat treatment is applied to a card having an information-storing portion arranged in part of a surface of a card body of a card, by using a light source as a heating source, to thereby fix an image to the card. A light-blocking plate is arranged such that the light-blocking plate is positioned between the card and the light source to block irradiated light to the information-storing portion. An image-forming apparatus incorporating the heat treatment mechanism is also provided.