31results about How to "Excellent manufacturing stability" patented technology

The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101, an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113, and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101. The interconnect component 101 has a constitution where an interconnect layer 103, a silicon layer 105 and an insulating film 107 are sequentially formed. The interconnect layer 103 has a constitution where the interconnect layer 103 has a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor element 113 is electrically connected with the second semiconductor element 111 through the conductive component.

In a lithium secondary battery provided by the present invention, the layer density on a side facing a protective layer (46) in a negative electrode active material layer (44) and / or positive electrode active material layer where the protective layer is formed, the protective layer containing an insulating filler and a binder, is higher than the layer density in a central portion and a side facing a current collector (42) in the negative electrode active material layer and / or positive electrode active material layer where the protective layer is formed.

The manufacturing stability can be improved while effectively inhibiting the short-channel effect in the transistor according to the present invention. A halo impurity having a conductivity type opposite to a first conductivity type of a first impurity is ion-implanted into the silicon substrate 101, and thereafter, the first impurity having the first conductivity type is ion-implanted, and then a laser beam is irradiated on a region where the first impurity is doped under a condition so that the silicon substrate 101 is not melted to form a p-type halo region 113 and a n-type extension region 111. Then, the second impurity having the first conductivity type is ion-implanted into the silicon substrate 101, and a laser beam is irradiated on a region where the second impurity is doped under a condition so that the silicon substrate 101 is not melted to form a n-type source / drain region 109.

The polymerizable composition for an optical material of the present invention includes: (A) a compound having a carbon-carbon triple bond and at least one group selected from an isocyanate group and an isothiocyanate group in a molecule; and (B) a polythiol compound.

A first metal film mainly including Ta is formed on a gate insulating film in a region excluding an n MOS transistor formation region and then a polysilicon film is formed to cover the gate insulating film and the first metal film. A first dummy electrode is formed by selectively removing the gate insulating film and the polysilicon film by etching, and a second dummy gate is formed by selectively removing the gate insulating film, the first metal film and the polysilicon film. An insulating layer is formed to embed the dummy gate electrodes and to expose an upper surface of the dummy gate electrodes. The polysilicon film of the dummy gate electrodes is removed to form recesses in the insulating layer, then a second metal film is formed within the recesses and on the insulating layer, and the second metal film is selectively polished.

There is provided an LSI socket containing a pogo-pin type decoupling capacitor for reducing the potential fluctuation of power supplies and GNDs at the time of testing LSI incorporated in a BGA package. The LSI socket comprises a printed board 102 containing decoupling capacitors 113 corresponding to one or more power supply voltages inside thereof, a pogo-pin supporting casing portion 104 on which the printed board 102 is overlapped into a single piece, and pogo-pins 103 inserted into penetrating holes in which hole positions of through holes 109 drilled in the printed board 102 and casing holes 114 drilled in the pogo-pin supporting casing portion 104 are allowed to be matched, wherein the printed board 102 is disposed on the upper surface side of the pogo-pin supporting casing portion 104 which faces the BGA package, or disposed on the lower surface side of the pogo-pin supporting casing portion 104, at the time of testing the LSI incorporated in the BGA package.

The invention provides an electron injection method of a metal-organic framework thin film. The electron injection method comprises the steps of (1) forming an MOF (Metal-Organic Framework) thin film on the surface of an electrode by use of an MOF precursor solution, and (2) injecting electrons into an electron transfer layer, wherein the preparation method of the MOF precursor solution in the step (1) comprises the steps of (11) dissolving an organic carboxylic acid into water or an alcohol solution to form an organic carboxylic acid solution, (12) adding a metal oxide powder to the organic carboxylic acid solution, and (13) adding an inorganic alkali solution to form a transparent mixed solution. The electron injection method of the MOF thin film has the advantages that the MOF precursor solution is simple to prepare without heating and pressurizing, the preparation process is good in stability, low in cost and suitable for large-scale industrial production, and the MOF thin film is high in electronic injection capability and extremely stable in air.

Aiming at providing a semiconductor device advanced in performance of transistors, and improved in reliability, a semiconductor device of the present invention has a semiconductor element, a frame component provided over the semiconductor element, while forming a cavity therein, and a molding resin layer covering around the frame component, wherein the frame component is composed of a plurality of resin films (a first resin film and a second resin film) containing the same resin, and the cavity allows the active region of the semiconductor element to expose therein.

An aspect of the present invention relates to optical glass, which is oxide glass comprising various cationic components in prescribed amounts without Pb, with a refractive index nd of 1.750 to 1.850, an Abbé number νd of 29.0 to 40.0, and a glass transition temperature of less than 630° C.

An aspect of the present invention relates to optical glass, which is oxide glass comprising various cationic components in prescribed amounts without Pb, with a refractive index nd of 1.750 to 1.850, an Abbé number νd of 29.0 to 40.0, and a glass transition temperature of less than 630° C.

The present invention provides a semiconductor device that shows excellent manufacturing stability and has lower contact resistance, and a method for manufacturing the semiconductor device.The semiconductor device includes an upper interconnect, a lower interconnect, insulating layers interposed between the upper interconnect and the lower interconnect, a connecting portion that is formed in the insulating layers and connects the upper interconnect and the lower interconnect, and an element that is placed in one of the insulating layers and has a conductive layer connected to the connecting portion. The connecting portion is formed over the lower interconnect and the end portions of the conductive layer of the element, and is in contact with the upper face of the lower interconnect and the upper faces and side faces of the end portions of the conductive layer of the element.

Provided are: a method for producing a polymer composition containing a modified chlorinated polyolefin, which exhibits excellent production stability; and a coating material which contains a polymercomposition containing a modified chlorinated polyolefin. According to the present invention, a polymer composition containing a modified chlorinated polyolefin is obtained by copolymerizing polymerizable monomers including (b) a chlorinated polyolefin having an allyloxy group and (c) one or more compounds selected from among (meth)acrylic acid esters, (meth)acrylic acids and styrene in the coexistence of (a) a compound having an allyloxy group and a hydroxyl group.

The invention relates to the technical field of cabinet panels, in particular to a preparation process of an environmental-friendly cabinet board. The environmental-friendly cabinet board comprises adecorative layer, a sandwich plate layer, a foam plate core layer and a bottom plate layer which are sequentially compounded, a resin reinforcement layer is compounded between the sandwich plate layerand the foam plate core layer and between the foam plate core layer and the bottom plate layer, a plurality of conical bulges are arranged on the side surfaces of the resin reinforcement layer compounded with the foam plate core layer, the surface of the environmental protection cabinet board is sprayed with a waterproof and flame retardant paint, so that the cabinet board is environmentally friendly, pollution-free and formaldehyde-free, and has low water absorption, excellent tensile property and impact resistance.

A curing composition is disclosed which is excellent in workability, adhesiveness, rubber properties, shelf life stability, and fast curing properties. The curing composition contains (A) a crosslinkable silyl group-containing organic polymer and (B) a (meth)acrylic polymer which is obtained by polymerizing a (meth)acrylic monomer having a polymerizable unsaturated bond in the presence of a metallocene compound and a crosslinkable silyl group-containing thiol compound, and at least one end of which is bonded with a residue -S-R (wherein R is a group having a crosslinkable silyl group) which is left when a hydrogen atom is removed from the crosslinkable silyl group-containing thiol compound.

A luminescent material and a preparation method thereof are provided. The said luminescent material is represented by the following chemical formula: Ln2−EuxSn2O7, wherein Ln is selected from one of Gd, Y and La, 0.1≦x≦1.5. The said luminescent material has good electrical performance, anti-electron bombardment and stable luminescent property. It is appropriate to be used in field emission light-emitting devices. The said preparation method has simple technique, no pollution, manageable process conditions, low preparation temperature and low equipment requirement, and is beneficial to industry production.

The invention relates to a processing method of a cuttlefish sauce food. The processing method comprises the following steps of a) performing raw material pretreatment: using ice fresh cuttlefish as raw materials, squeezing out cuttlefish sepias, cutting cuttlefish heads into small blocks or squid tentacle granules of which the sizes are equal, and performing refrigerating for standby application;b) performing water retention and dip treatment: putting the cuttlefish diced meat or squid tentacle granules which are accurately weighed in a polyphosphate solution of which the mass concentrationis 1-3%, performing water retention and dip treatment for 1-5h, after the cuttlefish diced meat or squid tentacle granules are dipped for certain time, performing stirring once every 26-36 min, afterthe treated cuttlefish diced meat or squid tentacle granules are taken out, performing water draining on a net sheet; c) performing compounding to obtain a cuttlefish sauce: after the cuttlefish sepias are diluted by a certain quantity of deionized water, uniformly mixing the diluted cuttlefish sepias with the cuttlefish diced meat or squid tentacle granules in a certain proportion, and a thickening agent, and adding a certain amount of table salt for seasoning; and d) performing canning, sterilizing and cooling: loading the compounded cuttlefish sauce into sterilized glass bottles, performingsealing when the glass bottles are hot, performing sterilization under 110-130 DEG C for 10-20min,and after the glass bottles with the cuttlefish sauce are taken out, rapidly performing cooling to room temperature.