The invention discloses a P-type gate enhanced device for an
extreme environment and a preparation method of the P-type gate enhanced device. The P-type gate enhanced device comprises a substrate; the middle function layer is stacked on the substrate; the
barrier layer is stacked on the side, away from the substrate, of the middle functional layer, and the source
electrode makes contact with the surface of the
barrier layer; the AlN spacer layer is stacked on one side, far away from the middle functional layer, of the
barrier layer, and the drain
electrode is in contact with the surface of the AlN spacer layer; the P-GaN cap layer is stacked on one side, far away from the barrier layer, of the AlN spacing layer, and the grid
electrode is in contact with the surface of the P-GaN cap layer; the
diamond film layer is stacked on the surface of the P-GaN cap layer and covers the source electrode, the drain electrode and the grid electrode. The AlN spacer layer is added between the P-GaN cap layer and the barrier layer, so that the Fowler-Nordheim tunneling probability of
hot electrons is remarkably suppressed, the lattice damage
chain reaction induced by
electron bombardment is blocked, and the interface
state density is reduced. And the
diamond film layer is arranged, so that the long-term reliability of the device in an
extreme environment can be effectively improved by virtue of ultrahigh
thermal conductivity, extreme
thermal stability and a high
irradiation damage resistance threshold value of the
diamond film layer.