13066results about "Welding apparatus" patented technology

A flip chip interconnect system comprises and elongated pillar comprising two elongated portions, one portion including copper and another portion including solder. The portion including copper is in contact with the semiconductor chip and has a length preferably of more than 55 microns to reduce the effect of .alpha. particles from the solder from affecting electronic devices on the chip. The total length of the pillar is preferably in the range of 80 to 120 microns.

Break-away tethers to secure electronic, mechanical, optical, or other microstructures, during release from one substrate and transfer to another. Microstructures are fabricated with integrated tethers attaching them to a first substrate. The structures are undercut by etching and contacted and bonded to a second substrate. First and second substrates are separated, breaking the tethers.

Embodiments of the present invention relate generally to solder bump formation and semiconductor device assemblies. One embodiment related to a method for forming a bump structure includes providing a semiconductor device (10) having a bond pad (12), and forming a first masking layer (20) overlying the bond pad (12). The first masking layer (20) is patterned to form a first opening (22) overlying at least a portion of the bond pad (12). A second masking layer (40) is formed overlying the first masking layer (20), and the second masking layer (40) is patterned to form a second opening (42) overlying at least a portion of the first opening (22). The method further includes forming a stud (30) at least within the first opening (22) and a solder bump (60) at least within the second opening (42).

A bump connection structure and a method of attachment to integrated circuits or packages is provided which comprises a prefabricated core structure coated with solderable metal layers to form a composite bump. Said composite bump is aligned to contact pads of the chip or package which have been coated with solder paste, and the assembly heated to form a metallurgical bond. The prefabricated core structures are comprised of metal, plastic or ceramic of the size and dictated by package standards. The connection structure is preferably lead free.

When a diamond is brazed to a metal substrate, while obtaining a stable joining strength, a joined interface of the diamond is not eroded to provide a good joint with a beautiful view. A brazing-filler material containing at least one selected from a group consisting of gold and silver, and copper as principal components, and further containing 0.001 to 5 mass % of vanadium is used. Preferably, a vanadium content is not more than 2.0 mass %, and more preferably not more than 0.5 mass %. Using this brazing-filler material, unidirectional solidification is performed from a side of diamond to form vanadium carbide in a joined interface in a shape of islands, and thereby an interface having a beautiful view with stable joining strength can be obtained. In addition, strong joining is possible also by a usual solidification method.

Interconnection elements for electronic components, exhibiting desirable mechanical characteristic (such as resiliency, for making pressure contacts) are formed by using a shaping tool (512) to shape an elongate core element (502) of a soft material (such as gold or soft copper wire) to have a springable shape (including cantilever beam, S-shape, U-shape), and overcoating the shaped core element with a hard material (such as nickel and its alloys), to impart to desired spring (resilient) characteristic to the resulting composite interconnection element. A final overcoat of a material having superior electrical qualities (e.g., electrical conductivity and/or solderability) may be applied to the composite interconnection element. The resulting interconnection elements may be mounted to a variety of electronic components, including directly to semiconductor dies and wafers (in which case the overcoat material anchors the composite interconnection element to a terminal (or the like) on the electronic component), may be mounted to support substrates for use as interposers and may be mounted to substrates for use as probe cards or probe card inserts. The shaping tool may be an anvil (622) and a die (624), and may nick or sever successive shaped portions of the elongate elements, and the elongate element may be of an inherently hard (springy) material. Methods of fabricating interconnection elements on sacrificial substrates are described. Methods of fabricating tip structures (258) and contact tips at the end of interconnection elements are also described.

A MEMS vaporizer is described which can be used for electronic cigarettes. The vaporizer mainly composes: a silicon substrate, a micro-channel array, a membrane suspending over the micro-channel array and supported by the silicon substrate, a resistance heater and a resistance temperature sensor are disposed on the membrane. Since the vaporizer is a silicon-based integrated actuator which provides advantages including small size, compact structure, lower power consumption, lower cost, increased reliability, higher precision, and more environmental friendliness.

System for providing an open-cavity semiconductor package. The system includes a method for wire bonding a finger sensor die to an external circuit. The finger sensor die includes a sensor array having one or more die contacts that are wire bonded to one or more external contacts of the external circuit so that a usable portion of the sensor array is maximized. The method comprises steps of forming a ball at a first end of a bonding wire, forming an electrically conductive connection between the ball and a selected external contact of the external circuit, extending the bonding wire to a selected die contact so as to form a wire loop having a low loop height, and forming an electrically conductive stitch connection between a second end of the bonding wire and the selected die contact.

A highly reliable copper circuit-joined board that, in mounting a semiconductor element, a lead frame or the like on a ceramic substrate, enables the semiconductor element, the lead frame or the like to be strongly joined to the substrate without breaking or deformation of the substrate found in conventional joining methods, such as brazing and joining using a copper/copper oxide eutectic crystal. Any one of an interposing layer comprising a brazing material layer comprising silver and/or copper as a main component and an active metal or an interposing layer having a two-layer structure comprising a first interposing layer comprising the brazing material layer or a high-melting metallizing layer and a second interposing layer, having a melting point of 1000.degree. C. or below, comprising Ni, Fe, Cu as a main component in that order from the substrate side, is formed on a ceramic substrate, and a conductor layer, comprising copper as a main component, which, in both the lengthwise and widthwise directions, is at least 0.05 mm shorter than the interposing layer, is formed on the interposing layer to prepare a copper circuit-joined board. The copper circuit-joined board may comprise the base board having thereon an outer layer comprising Ni as a main component. A semiconductor element is mounted on the copper circuit-joined board to prepare a semiconductor device.

There is provided a semiconductor device having a semiconductor chip in which a first protrusion electrode is formed on the semiconductor substrate; and an intermediate substrate which comprises a base substrate, a first external terminal provided in said base substrate, which is joined to said first protrusion electrode, a second external terminal provided in said base substrate, an electrode section being exposed on both surfaces of said base substrate, and a second protrusion electrode formed at one end face of said second external terminal, a plurality of said intermediate substrates being stacked in layers by joining said second protrusion electrode to the other end face of said second external terminal, thus enabling miniaturizing and lightening electronic equipment and realizing high reliability and high performance.

Methods and devices are provided for improved large-scale solar installations. In one embodiment, a junction-box free photovoltaic module is used comprising of a plurality of photovoltaic cells and a module support layer providing a mounting surface for the cells. The module has a first electrical lead extending outward from one of the photovoltaic cells, the lead coupled to an adjacent module without passing the lead through a junction box. The module may have a second electrical lead extending outward from one of the photovoltaic cells, the lead coupled to another adjacent module without passing the lead through a junction box. Without junction boxes, the module may use connectors along the edges of the modules which can substantially reduce the amount of wire or connector ribbon used for such connections.

The invention provides a welding robot device for welding of a plunger pump power end shell. The welding robot device for welding of the plunger pump power end shell comprises a controlling system, a portal frame X-Y-Z coordinate system, a welding system, a space positioner and a tool clamp. The tool clamp is used for clamping the plunger pump power end shell, and a plunger pump shell can be one-time clamped; all welding joints of the plunger pump shell can be positionally changed to a flat welding position or a flat fillet welding position through the space positioner; a welding mechanical arm is connected with a coordinate Z-axis in the portal frame X-Y-Z coordinate system, and welding of welding joints in the different positions can be finished; and synchronized driving of the welding mechanical arm, a coordinate X-axis, a coordinate Y-axis, the coordinate Z-axis and the space positioner can be realized, so that continuity during the welding process is guaranteed, and welding quality and welding efficiency are ensured.

The present invention comprises methods for making three-dimensional (3-D) liquid crystalline polymer (LCP) interconnect structures using a high temperature singe sided liquid crystalline polymer, and low temperature single sided liquid crystalline polymer, whereas both the high temperature LCP and the low temperature LCP are drilled using a laser or mechanical drill or mechanically punch to form a z-axis connection. The single sided Conductive layer is used as a bus layer to form z axis conductive stud conductive stud within the high temperature and low temperature LCP, followed by deposition of a metallic capping layer of the stud that serves as the bonding metal between the conductive interconnects to form the z-axis electrical connection. High temperature and low temperature LCP circuit layers are etched or built up to form circuit patterns and subsequently bonded together to form final 3-D multilayer circuit pattern whereas the low temperature LCP melts to form both dielectric to dielectric bond to high temperature LCP circuit layer, and dielectric to conductive bond, whereas, metal to metal bonding occurs with high temperature metal capping layer bonding to conductive metal layer. The resultant structure is then packaged using two metallized organic cores that are laminated onto either side of the device using a low temperature adhesive with similar electrical properties and subsequently metallized to form the input output terminals and EM shielding.

Separate heating elements are embedded in a printed circuit board near integrated circuit (IC) packages or other parts mounted on the circuit board. Each heating element supplies heat to the part residing near it in response to an input voltage pulse. The heating elements are used to selectively melt solder or adhesives attaching the parts to the circuit board so that they can be easily removed or to temporarily melt solder or cure adhesive when the parts are mounted on the circuit board. The heating elements are also used to supply heat to IC packages for regulating their operating temperatures.

The present invention is directed to a method of joining an amorphous material to a non-amorphous material including, forming a cast mechanical joint between the bulk solidifying amorphous alloy and the non-amorphous material.