5 results about "Flip chip interconnect" patented technology

A transistor device package includes a component assembly comprising an interconnect structure, a transistor die having a front surface including gate, drain, and source terminal on a first surface of the interconnect structure, and one or more passive electrical components electrically coupled to the gate, drain, and / or source terminal by the interconnect structure. A thermally conductive flange is attached to a back surface of the transistor die, which is opposite the front surface, by a conductive adhesive. Respective patterns of the conductive adhesive are provided on the first surface of the interconnect structure, and least one of the respective patterns of the conductive adhesive provides an input, output, or ground signal path for the transistor device package. Related fabrication methods are also discussed.

A semiconductor device (100) and manufacturing method thereof are presented. The device has a top side and a bottom side and comprises a leadframe with pads (110A, 112, 114) extending to the bottom side of and exterior to the device. At least one of the pads comprises a leadframe vertical protrusion (110B) extending from the bottom side to the top side. A die (200) is flip-chip arranged in the semiconductor device and comprises terminals (202, 204, 206). At least one of the terminals (202, 204) on the top side of the die and facing the bottom side of the device is electrically connected to a corresponding pad (112, 114). Another one of the terminals (206) on the bottom side of the die faces the top side of the device where a conductive film (102) electrically connects the terminal (206) to the leadframe vertical protrusion (110B) at the top side.

A semiconductor device and manufacturing method thereof are presented. The device has a top side and a bottom side and includes a leadframe with pads extending to the bottom side of and exterior to the device. At least one of the pads includes a leadframe vertical protrusion extending from the bottom side to the top side. A die is flip-chip arranged in the semiconductor device and includes terminals. At least one of the terminals on the top side of the die and facing the bottom side of the device is electrically connected to a corresponding pad. Another one of the terminals on the bottom side of the die faces the top side of the device where a conductive film electrically connects the terminal to the leadframe vertical protrusion at the top side.

A transistor amplifier includes a die comprising a gate terminal, a drain terminal, and a source terminal, a circuitry module on the transistor die and electrically coupled to the gate terminal, the drain terminal, and / or the source terminal, and one or more passive electrical components on a first surface of the circuitry module. The one or more passive electrical components are electrically coupled between the gate terminal and a first lead of the transistor amplifier and / or between the drain terminal and a second lead of the transistor amplifier.

A semiconductor device (100) and a method of manufacturing the same are presented. The device has a top side and a bottom side, and includes a lead frame having pads (110A, 112, 114) that extend to the bottom side of the device and to an exterior of the device. At least one of the pads includes a lead frame vertical protrusion (110B) that extends from the bottom side to the top side. A die (200) is flip-chip disposed in the semiconductor device and includes terminals (202, 204, 206). At least one of the terminals (202, 204) is located on the top side of the die and faces the bottom side of the device, the at least one terminal being electrically connected to a corresponding pad (112, 114). Another one of the terminals (206) located on a bottom side of the die faces the top side of the device, wherein a conductive film (102) electrically connects the terminal (206) to the leadframe vertical protrusion (110B) at the top side.