62 results about "Solder wetting" patented technology

A method for forming through-wafer interconnects (TWI) in a substrate of a thickness in excess of that of a semiconductor die such as a semiconductor wafer. Blind holes are formed from the active surface, sidewalls thereof passivated and coated with a solder-wetting material. A vent hole is then formed from the opposite surface (e.g., wafer back side) to intersect the blind hole. The blind hole is solder filled, followed by back thinning of the vent hole portion of the wafer to a final substrate thickness to expose the solder and solder-wetting material at both the active surface and the thinned back side. A metal layer such as nickel, having a glass transition temperature greater than that of the solder, may be plated to form a dam structure covering one or both ends of the TWI including the solder and solder-wetting material to prevent leakage of molten solder from the TWI during high temperature excursions. Intermediate structures of semiconductor devices, semiconductor devices and systems are also disclosed.

An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

The current invention provides a optical MEM device and system with an angled lid for hermetically sealing an active MEMS structure. The lid is sealed through an asymmetric seal formed with sealing rings having an asymmetric distribution of solder wetting surfaces which tilts the lid, when the lid and a substrate are soldered together. The asymmetric distribution wetting surfaces can be provided by forming one or more edge features, by patterning portions of the sealing rings or both. Preferably, the lid is transparent to one or more wavelengths of light in a range of 300 to 3000 Angstroms and hermetically seals a grating light valve structure having a plurality of movable ribbon for modulating light through the lid.

A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.

An electrical circuit apparatus (300) that includes: a substrate (330) having a ground layer (336), at least one thermal aperture (332), and at least one solder aperture (334); a heat sink (310); and an adhesive layer (320) for mechanically coupling the heat sink to the ground layer of the substrate such that at least a portion of the at least one substrate thermal aperture overlaps the heat sink, the adhesive layer having at least one thermal aperture (322) and at least one solder aperture (324), wherein aligning the at least one substrate solder aperture with the at least one adhesive layer solder aperture and aligning the at least one substrate thermal aperture with the at least one adhesive layer thermal aperture enables solder wetting in a predetermined area between the heat sink and the ground layer of the substrate.

In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.

In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.

A semiconductor device includes a semiconductor substrate, a first metal film on a back surface of the semiconductor substrate, a second metal film on the first metal film, and a third metal film on the second metal film. The first metal film forms an alloy with a solder. The second metal film causes isothermal solidification of the solder. The third metal film improves solder wetting properties or inhibits oxidation. Further, in a method for die-bonding a semiconductor device, a specific metal is diffused into a solder, when the solder melts, to transform the solder into a high melting point alloy, thereby causing isothermal solidification of the solder. The specific metal is different from the metal of the solder.

In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.

In an electrical connector to be attached to a circuit board, a terminal has a contact section on one free end side to contact with a terminal of a mating connector and has a connecting section on the other free end side to be connected by soldering to a circuit portion of a circuit board. The terminal has a holding section and a connecting section. The holding section has a face-contact section, a backside section, and a side-face section. The terminal has a low solder wetting area at least on a part of a circumferential area of the holding section in the longitudinal direction, and the contact section is formed above the upper end of the low solder wetting area on the backside section. The upper end of the low solder wetting area is provided below the upper end at the side-face sections and the contact-face section.

The invention relates to a method for preparing a local soft solder coating on the surface of aluminum alloy in the atmospheric environment under the low-temperature condition. According to the method, the local soft solder coating on the surface of aluminum or on the surface of aluminum alloy is prepared in the atmospheric environment under the low-temperature condition through the function of the ultrasonic phonochemistry. By the adoption of the method, the defect that a soft solder wetting coating on the surface of aluminum or the surface of aluminum alloy cannot be prepared easily is overcome. Compared with other coating techniques such as electroplating, the method has the advantages that the technique is simple; the manufacturing cost is low; no pollution is generated; and the local coating can be formed within an extremely short period of time.

The invention provides an L-shaped sidewall protection structure formed of a non-metal material on the Cu pillar sidewall to prevent the Cu pillar sidewall from oxidation and increase adhesion between the Cu pillar sidewall and a subsequently formed underfill material. Compared with the conventional immersion Sn method followed by an annealing process, the non-metal sidewall protection structure can adjust substrate stress, prevent solder wetting to the Cu pillar around the perimeter of the UBM layer during the reflow process, and eliminate blue tape residue. This is applicable to fine pitch bump schemes. An L-shaped sidewall protection process is used for Cu pillar bump technology. The L-shaped sidewall protection structure is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer or combinations thereof.

The invention discloses a high-silicon-aluminum-based composite brazing filler metal, a preparation method thereof and a brazing method using the brazing filler metal. The brazing filler metal is in the form of a foil, and its composition includes mass fractions of 5-8% Si, 19.6-28.6% Cu, 1.2-2.5% Mg, 0.5-3.5% Ce, and the balance is Al. The preparation method comprises the following steps: mixing materials; electromagnetic induction smelting to prepare brazing filler metal blanks; molten salt protecting refined brazing filler metal; and preparing quenched foil-shaped brazing filler metal. The brazing method using the brazing material comprises the following steps: pretreatment of the surface to be welded; clamping of the weldment and the brazing material; and vacuum brazing. The invention solves the problem that the silicon particles and refractory oxide film on the surface of the high-silicon-aluminum-based composite material hinder the wetting and spreading of the brazing filler metal during the welding process of the high-silicon-aluminum-based composite material, and the prepared foil-shaped solder is closely combined with the high-silicon-aluminum-based composite material, and the welding Good seam formation, strong corrosion resistance, high joint shear strength and air tightness, and can be used in the field of electronic packaging of high-silicon-aluminum matrix composite materials.

A plating solution and a plating method, which does not use a complexing agent and which provides favorable solder wetting properties and an extremely low coupling rate when electrolytic tin plating is performed, and particularly when electrolytic tin plating is performed using a barrel plating method. The present invention provides an electrolytic tin plating solution for chip components, comprising (A) stannous ions, (B) acid, (C) N,N-dipolyoxy-alkylene-N-alkyl amine, amine oxide, or blend thereof and (D) an anti-sticking agent; wherein the pH is 1 or lower.