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66 results about "Solder wetting" patented technology
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Methods for forming through-wafer interconnects, intermediate structures so formed, and devices and systems having at least one solder dam structure
ActiveUS20070045779A1Conveniently attachedEliminate cross-contaminationSemiconductor/solid-state device detailsSolid-state devicesVitrificationDevice material
A method for forming through-wafer interconnects (TWI) in a substrate of a thickness in excess of that of a semiconductor die such as a semiconductor wafer. Blind holes are formed from the active surface, sidewalls thereof passivated and coated with a solder-wetting material. A vent hole is then formed from the opposite surface (e.g., wafer back side) to intersect the blind hole. The blind hole is solder filled, followed by back thinning of the vent hole portion of the wafer to a final substrate thickness to expose the solder and solder-wetting material at both the active surface and the thinned back side. A metal layer such as nickel, having a glass transition temperature greater than that of the solder, may be plated to form a dam structure covering one or both ends of the TWI including the solder and solder-wetting material to prevent leakage of molten solder from the TWI during high temperature excursions. Intermediate structures of semiconductor devices, semiconductor devices and systems are also disclosed.
Owner:MICRON TECH INC
Wafer level package and fabrication method
InactiveUS7192807B1Maximize reliabilityMinimizes impedanceSemiconductor/solid-state device detailsSolid-state devicesSolder wettingConductive materials
A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.
Owner:AMKOR TECH SINGAPORE HLDG PTE LTD
Wafer level package and fabrication method
InactiveUS6905914B1Maximize reliabilityMinimizes impedanceSemiconductor/solid-state device detailsSolid-state devicesSolder wettingEngineering
A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.
Owner:AMKOR TECH SINGAPORE HLDG PTE LTD
Interconnections for flip-chip using lead-free solders and having reaction barrier layers
InactiveUS20050224966A1Soft errorCost-effectivePrinted circuit assemblingSemiconductor/solid-state device detailsFlip chip interconnectSolder ball
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion / reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Owner:ULTRATECH INT INC
Semiconductor device having an external electrode
InactiveUS20030025202A1Semiconductor/solid-state device detailsSolid-state devicesDevice materialSolder ball
An external electrode in a semiconductor device includes, from the bottom of a wafer, a wiring pad, first and second barrier metal layers, a solder-wetting film and a solder ball. The first barrier metal layer has a tensile internal stress and a granular crystalline structure, whereas the second barrier metal layer has a compressive internal stress and a pillar crystalline structure. The two-layer structure of the barrier metal film has an excellent barrier function against Sn diffusion from the solder ball and reduces the internal stress of the barrier metal film.
Owner:NEC ELECTRONICS CORP
Method of sealing a hermetic lid to a semiconductor die at an angle
InactiveUS6872984B1Reduce Optical InterferenceSemiconductor/solid-state device detailsSolid-state devicesHermetic sealAsymmetric distribution
The current invention provides a optical MEM device and system with an angled lid for hermetically sealing an active MEMS structure. The lid is sealed through an asymmetric seal formed with sealing rings having an asymmetric distribution of solder wetting surfaces which tilts the lid, when the lid and a substrate are soldered together. The asymmetric distribution wetting surfaces can be provided by forming one or more edge features, by patterning portions of the sealing rings or both. Preferably, the lid is transparent to one or more wavelengths of light in a range of 300 to 3000 Angstroms and hermetically seals a grating light valve structure having a plurality of movable ribbon for modulating light through the lid.
Owner:SILICON LIGHT MACHINES CORP
Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder filling
In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.
Owner:MICRON TECH INC
Electrical circuit apparatus and method for assembling same
InactiveUS6842341B1Easy to assembleEliminate needPrinted circuit assemblingInsulating substrate metal adhesion improvementSolder wettingHeat spreader
An electrical circuit apparatus (300) that includes: a substrate (330) having a ground layer (336), at least one device aperture (332), and at least one solder aperture (334); a heat sink (310); and an adhesive layer (320) for mechanically coupling the heat sink to the ground layer of the substrate such that at least a portion of the substrate device aperture overlaps the heat sink, the adhesive layer having at least one device aperture and at least one solder aperture, wherein aligning the at least one substrate solder aperture with the at least one adhesive layer solder aperture and aligning the at least one substrate device aperture with the at least one adhesive layer device aperture enables solder wetting in a predetermined area between the heat sink and the ground layer of the substrate.
Owner:MOTOROLA SOLUTIONS INC
Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers
InactiveUS20080157395A1Soft errorCost-effectiveSemiconductor/solid-state device detailsSolid-state devicesSolder ballSolder wetting
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion / reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Owner:ULTRATECH INT INC
Solder Interconnect with Non-Wettable Sidewall Pillars and Methods of Manufacture
ActiveUS20110193218A1Semiconductor/solid-state device detailsSolid-state devicesSolder wettingNickel alloy
A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.
Owner:GLOBALFOUNDRIES US INC
Electrical circuit apparatus and methods for assembling same
ActiveUS6861746B1Easy to assembleEliminate needPrinted circuit assemblingInsulating substrate metal adhesion improvementSolder wettingEngineering
An electrical circuit apparatus (300) that includes: a substrate (330) having a ground layer (336), at least one thermal aperture (332), and at least one solder aperture (334); a heat sink (310); and an adhesive layer (320) for mechanically coupling the heat sink to the ground layer of the substrate such that at least a portion of the at least one substrate thermal aperture overlaps the heat sink, the adhesive layer having at least one thermal aperture (322) and at least one solder aperture (324), wherein aligning the at least one substrate solder aperture with the at least one adhesive layer solder aperture and aligning the at least one substrate thermal aperture with the at least one adhesive layer thermal aperture enables solder wetting in a predetermined area between the heat sink and the ground layer of the substrate.
Owner:MOTOROLA SOLUTIONS INC
Methods of fabricating interconnects for semiconductor components
ActiveUS20050186790A1Semiconductor/solid-state device detailsSolid-state devicesGas phaseSolder wetting
In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.
Owner:MICRON TECH INC
Electrical connector for circuit board
ActiveUS8235733B2Increase contactLow profileLine/current collector detailsPrinted circuitsSolder wettingEngineering
In an electrical connector to be attached to a circuit board, a terminal has a contact section on one free end side to contact with a terminal of a mating connector and has a connecting section on the other free end side to be connected by soldering to a circuit portion of a circuit board. The terminal has a holding section and a connecting section. The holding section has a face-contact section, a backside section, and a side-face section. The terminal has a low solder wetting area at least on a part of a circumferential area of the holding section in the longitudinal direction, and the contact section is formed above the upper end of the low solder wetting area on the backside section. The upper end of the low solder wetting area is provided below the upper end at the side-face sections and the contact-face section.
Owner:HIROSE ELECTRIC GROUP +1
Methods of fabricating interconnects for semiconductor components
ActiveUS20050186777A1Semiconductor/solid-state device detailsSolid-state devicesGas phaseSolder wetting
In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.
Owner:MICRON TECH INC
Interconnections for flip-chip using lead-free solders and having reaction barrier layers
InactiveUS7410833B2Soft errorCost-effectivePrinted circuit assemblingSemiconductor/solid-state device detailsSolder wettingSolder ball
Owner:ULTRATECH INT INC
Electrical circuit apparatus and methods for assembling same
InactiveUS20050121774A1Easy to assembleEliminate needSemiconductor/solid-state device detailsSolid-state devicesSolder wettingHeat spreader
An electrical circuit apparatus (300) that includes: a substrate (330) having a ground layer (336), at least one thermal aperture (332), and at least one solder aperture (334); a heat sink (310); and an adhesive layer (320) for mechanically coupling the heat sink to the ground layer of the substrate such that at least a portion of the at least one substrate thermal aperture overlaps the heat sink, the adhesive layer having at least one thermal aperture (322) and at least one solder aperture (324), wherein aligning the at least one substrate solder aperture with the at least one adhesive layer solder aperture and aligning the at least one substrate thermal aperture with the at least one adhesive layer thermal aperture enables solder wetting in a predetermined area between the heat sink and the ground layer of the substrate.
Owner:MOTOROLA SOLUTIONS INC
Electrical circuit apparatus and methods for assembling same
InactiveUS7070084B2Easy to assembleEliminate needSemiconductor/solid-state device detailsSolid-state devicesSolder wettingHemt circuits
An electrical circuit apparatus (300) that includes: a substrate (330) having a ground layer (336), at least one thermal aperture (332), and at least one solder aperture (334); a heat sink (310); and an adhesive layer (320) for mechanically coupling the heat sink to the ground layer of the substrate such that at least a portion of the at least one substrate thermal aperture overlaps the heat sink, the adhesive layer having at least one thermal aperture (322) and at least one solder aperture (324), wherein aligning the at least one substrate solder aperture with the at least one adhesive layer solder aperture and aligning the at least one substrate thermal aperture with the at least one adhesive layer thermal aperture enables solder wetting in a predetermined area between the heat sink and the ground layer of the substrate.
Owner:MOTOROLA SOLUTIONS INC
Semiconductor device and die bonding method therefor
ActiveUS20070138650A1Reduce voidsReduce thermal resistanceSemiconductor/solid-state device detailsSolid-state devicesSolder wettingAlloy
A semiconductor device includes a semiconductor substrate, a first metal film on a back surface of the semiconductor substrate, a second metal film on the first metal film, and a third metal film on the second metal film. The first metal film forms an alloy with a solder. The second metal film causes isothermal solidification of the solder. The third metal film improves solder wetting properties or inhibits oxidation. Further, in a method for die-bonding a semiconductor device, a specific metal is diffused into a solder, when the solder melts, to transform the solder into a high melting point alloy, thereby causing isothermal solidification of the solder. The specific metal is different from the metal of the solder.
Owner:MITSUBISHI ELECTRIC CORP
Integrated circuit device and packaging assembly
InactiveCN102201375AAdjustable stressAvoid solder wettingSemiconductor/solid-state device detailsSolid-state devicesSolder wettingMetallic materials
Owner:TAIWAN SEMICON MFG CO LTD
Electrical circuit board and a method for making the same
InactiveUS6998540B2Improve reliabilityHighly solderablePrinted circuit assemblingPrinted circuit aspectsSolder wettingEngineering
Owner:VISTEON GLOBAL TECH INC
Method for pre-applied thermoplastic reinforcement of electronic components
A method for utilizing one or more pre-formed underfill compositions in the application of surface mount components, most commonly chip scale packages (CSP's), to substrates for use in electronic devices. The pre-formed underfill of the invention is applied directly to the top and / or sides of the CSP before the reflow process and softens during reflow to flow across the circuit / board gap. One underfill composition utilized for this method comprises a thermoplastic film system that provides a coating on the component that is smooth and non-tacky. The film may be applied selectively to parts of the CSP such that it overhangs the top of the component and upon reflow flows over the edge of the CSP to form a connection with the substrate. A second pre-applied underfill composition or solder paste may be applied as an adhesive to provide sufficient tack in order to hold the electronic assembly together during the assembly process and to serve as a flux to facilitate solder wetting.
Owner:HENKEL KGAA
Electrical circuit apparatus and method
InactiveUS20050092814A1Easy to assembleEliminate needPrinted circuit assemblingInsulating substrate metal adhesion improvementSolder wettingEngineering
An electrical circuit apparatus (300) that includes: a substrate (330) having a ground layer (336), at least one device aperture (332), and at least one solder aperture (334); a heat sink (310); and an adhesive layer (320) for mechanically coupling the heat sink to the ground layer of the substrate such that at least a portion of the substrate device aperture overlaps the heat sink, the adhesive layer having at least one device aperture and at least one solder aperture, wherein aligning the at least one substrate solder aperture with the at least one adhesive layer solder aperture and aligning the at least one substrate device aperture with the at least one adhesive layer device aperture enables solder wetting in a predetermined area between the heat sink and the ground layer of the substrate.
Owner:MOTOROLA SOLUTIONS INC
Methods of fabricating interconnects for semiconductor components
ActiveUS20050186770A1Semiconductor/solid-state device detailsSolid-state devicesGas phaseSolder wetting
In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.
Owner:MICRON TECH INC
Electrical connector for circuit board
ActiveUS20110070752A1Prevent solder wickingIncrease contactLine/current collector detailsPrinted circuitsSolder wettingElectrical connector
In an electrical connector to be attached to a circuit board, a terminal has a contact section on one free end side to contact with a terminal of a mating connector and has a connecting section on the other free end side to be connected by soldering to a circuit portion of a circuit board. The terminal has a holding section and a connecting section. The holding section has a face-contact section, a backside section, and a side-face section. The terminal has a low solder wetting area at least on a part of a circumferential area of the holding section in the longitudinal direction, and the contact section is formed above the upper end of the low solder wetting area on the backside section. The upper end of the low solder wetting area is provided below the upper end at the side-face sections and the contact-face section.
Owner:HIROSE ELECTRIC GROUP +1
Solder interconnect with non-wettable sidewall pillars and methods of manufacture
ActiveUS8637392B2Semiconductor/solid-state device detailsSolid-state devicesSolder wettingNickel alloy
A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.
Owner:GLOBALFOUNDRIES US INC
Heat exchanger
InactiveUS20100224351A1Soldering apparatusStationary conduit assembliesPlate heat exchangerSolder wetting
A heat exchanger is provide, in which a fin member and a tube member are joined each other, wherein the fin member includes a solder wetting film layer containing copper, in at least a part of a surface of a fin substrate made of aluminum or an alloy mainly composed of aluminum, where the fin member and the tube member are joined each other, and the tube member includes a solder film layer made of solder containing tin, in at least a part of a surface of a tube substrate made of copper or an alloy mainly composed of copper, where the tube member and the fin member are joined each other, wherein the fin member and the tube member are joined each other, through a diffusion bonding of a copper component of the solder wetting film layer and a tin component of the solder film layer.
Owner:HITACHI CABLE
Interconnection for flip-chip using lead-free solders and having improved reaction barrier layers
InactiveUS20100062597A1Soft errorCost-effectiveSemiconductor/solid-state device detailsSolid-state devicesSolder ballSolder wetting
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion / reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Owner:ULTRATECH INT INC
Method for preparing local soft solder coating on surface of aluminum alloy
InactiveCN105014175ADoes not affect ingredientsEasy to makeWelding/cutting media/materialsWelding/soldering/cutting articlesSolder wettingPollution
The invention relates to a method for preparing a local soft solder coating on the surface of aluminum alloy in the atmospheric environment under the low-temperature condition. According to the method, the local soft solder coating on the surface of aluminum or on the surface of aluminum alloy is prepared in the atmospheric environment under the low-temperature condition through the function of the ultrasonic phonochemistry. By the adoption of the method, the defect that a soft solder wetting coating on the surface of aluminum or the surface of aluminum alloy cannot be prepared easily is overcome. Compared with other coating techniques such as electroplating, the method has the advantages that the technique is simple; the manufacturing cost is low; no pollution is generated; and the local coating can be formed within an extremely short period of time.
Owner:HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL +1
Integrated circuit element, forming method thereof and packaging assembly
InactiveCN102254870ASemiconductor/solid-state device detailsSolid-state devicesElectrical conductorMetallic materials
The invention provides an L-shaped sidewall protection structure formed of a non-metal material on the Cu pillar sidewall to prevent the Cu pillar sidewall from oxidation and increase adhesion between the Cu pillar sidewall and a subsequently formed underfill material. Compared with the conventional immersion Sn method followed by an annealing process, the non-metal sidewall protection structure can adjust substrate stress, prevent solder wetting to the Cu pillar around the perimeter of the UBM layer during the reflow process, and eliminate blue tape residue. This is applicable to fine pitch bump schemes. An L-shaped sidewall protection process is used for Cu pillar bump technology. The L-shaped sidewall protection structure is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer or combinations thereof.
Owner:TAIWAN SEMICON MFG CO LTD
High silicon aluminum matrix composite brazing filler metal and preparation method thereof as well as brazing method
InactiveCN106956092AImprove connection strengthImprove air tightnessWelding/cutting media/materialsWelding/soldering/cutting articlesSilicon oxideAir tightness
The invention discloses a high-silicon-aluminum-based composite brazing filler metal, a preparation method thereof and a brazing method using the brazing filler metal. The brazing filler metal is in the form of a foil, and its composition includes mass fractions of 5-8% Si, 19.6-28.6% Cu, 1.2-2.5% Mg, 0.5-3.5% Ce, and the balance is Al. The preparation method comprises the following steps: mixing materials; electromagnetic induction smelting to prepare brazing filler metal blanks; molten salt protecting refined brazing filler metal; and preparing quenched foil-shaped brazing filler metal. The brazing method using the brazing material comprises the following steps: pretreatment of the surface to be welded; clamping of the weldment and the brazing material; and vacuum brazing. The invention solves the problem that the silicon particles and refractory oxide film on the surface of the high-silicon-aluminum-based composite material hinder the wetting and spreading of the brazing filler metal during the welding process of the high-silicon-aluminum-based composite material, and the prepared foil-shaped solder is closely combined with the high-silicon-aluminum-based composite material, and the welding Good seam formation, strong corrosion resistance, high joint shear strength and air tightness, and can be used in the field of electronic packaging of high-silicon-aluminum matrix composite materials.
Owner:HENAN POLYTECHNIC UNIV
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