379 results about "Intermediate structure" patented technology

A semiconductor processing system includes an intermediate structure disposed between an atmospheric pressure entrance transfer chamber and a vacuum common transfer chamber. The intermediate structure includes a transfer passage for a target substrate to pass therein. The transfer passage includes a first buffer chamber a middle transfer chamber and a second buffer chamber detachably connected. An additional processing apparatus is detachably connected to the middle transfer chamber. The intermediate structure is selectively arranged in first or second state. In the first state, the additional processing apparatus performs a vacuum process, while the first buffer chamber is a load-lock chamber. In the second state, the additional processing apparatus performs an atmospheric pressure process, while the second buffer chamber is a load-lock chamber.

A system and method for an automatic conversion of web pages to shared structured web pages. An input web page is augmented with syntactic elements of a server-based software tool to create and customize group-writeable web pages. Sub-regions of the web page that are to be individually-editable items are identified, and syntactic elements are added to show where these editable regions begin and end, and where clickable buttons will appear that trigger the editing of an individual item, the addition of a new item, or other editing features. Also, syntactic elements are added that act as templates for the layout of any item to be added or modified. The conversion process includes parsing the Web page into an intermediate structure, adding information to individual tokens about the structures in which the tokens play a part, and them generating the new page while making one or more final passes through the intermediate structure from beginning to end.

A method for forming through-wafer interconnects (TWI) in a substrate of a thickness in excess of that of a semiconductor die such as a semiconductor wafer. Blind holes are formed from the active surface, sidewalls thereof passivated and coated with a solder-wetting material. A vent hole is then formed from the opposite surface (e.g., wafer back side) to intersect the blind hole. The blind hole is solder filled, followed by back thinning of the vent hole portion of the wafer to a final substrate thickness to expose the solder and solder-wetting material at both the active surface and the thinned back side. A metal layer such as nickel, having a glass transition temperature greater than that of the solder, may be plated to form a dam structure covering one or both ends of the TWI including the solder and solder-wetting material to prevent leakage of molten solder from the TWI during high temperature excursions. Intermediate structures of semiconductor devices, semiconductor devices and systems are also disclosed.

An apparatus and method for attaching photovoltaic solar panels to a roof system surface. Thin film flexible panels are attached using a hook and loop system in which either the hook or loop material is attached to the underside of panel, and the other of the hook and loop material is attached the roof. Solar panels that are encased in a frame are attached using the hook and loop material directly to the roof system structure, or to an intermediate structure, which is in turn attached to the roof system surface. The method also determines the amount of mated hook and loop material that must be attached to each installed panel to ensure that the installed panels will be able to withstand the wind pressure uplift force required, and to ensure that in the event unexpected and exceessive uplift force is ever encountered, the panels separate at the hook and loop interface

Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a continuous layer of semiconductor material having a relaxed lattice structure.

A lithographic apparatus comprises a substrate table to hold a substrate, a reference structure and a measurement system to measure a position of the substrate table with respect to the reference structure. The measurement system comprises a first measurement system to measure a position of the substrate table with respect to an intermediate structure and a second measurement system to measure a position of the intermediate structure with respect to the reference structure. The intermediate structure may be connected or connectable to a drive mechanism to drive the substrate table. A distance between the substrate table and the intermediate structure, and a distance between the intermediate structure and the reference structure may be small which results in a highly accurate position measurement.

A lead with segmented electrodes can be made using one or two mold methods. In one method, segmented electrodes are individually disposed on pins on an interior surface within a mold. Each of the segmented electrodes has at least one opening formed in the exterior surface of the segmented electrode. The lead body is then molded between the electrodes. In a two mold method, segmented electrodes are inserted into electrode slots of a first mold and an interior portion of a lead body is formed. The resulting intermediate arrangement is placed into a second mold to form an exterior portion of the lead body. In another two mold method, a sacrificial ring is formed around the segmented electrodes in a first mold and the resulting intermediate structure is inserted in a second mold to form the lead body. The sacrificial ring is then removed.

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Methods of bonding together semiconductor structures include annealing metal of a feature on a semiconductor structure prior to directly bonding the feature to a metal feature of another semiconductor structure to form a bonded metal structure, and annealing the bonded metal structure after the bonding process. The thermal budget of the first annealing process may be at least as high as a thermal budget of a later annealing process. Additional methods involve forming a void in a metal feature, and annealing the metal feature to expand the metal of the feature into the void. Bonded semiconductor structures and intermediate structures are formed using such methods.

A method of producing a semiconductor structure having at least one support substrate and an ultrathin layer. The method includes bonding a support substrate to a source substrate, detaching a useful layer along a zone of weakness to obtain an intermediate structure including at least the transferred useful layer and the support substrate, and treating the transferred useful layer to obtain an ultrathin layer on the support substrate. The source substrate includes a front face and a zone of weakness below the front face that defines the useful layer, and the useful layer is sufficiently thick to withstand heat treatments without forming defects therein so that it can be reduced in thickness to form the ultrathin layer. The resulting ultrathin layer is suitable for use in applications in the fields of electronics, optoelectronics or optics.

Described herein are devices and methods which incorporate a surface mounted “base structure” for use with one or more components allowing various resistance-based exercises to be performed, for example, exercises incorporating bars, benches, handles and resistance bands. The device can be made modular such that an intermediate structure can interchangeably cooperate with various components allowing a myriad of different exercises to be performed, utilizing the same single intermediate structure. The device can comprise additional designs and features to enhance the safety and stability of the device and the connections of the various components to the device.

The invention relates to a chemical reactor with a nanometric superstructure, comprising at least one member wherein at least one reaction chamber is arranged, and said reaction chamber being filled at least partially with a high specific surface area material having a specific surface area greater than 5 m²/g, and characterised in that said high specific surface area material is selected from nanotubes or nanofibres.

These nanotubes or nanofibres are preferably selected in the group consisting of carbon nanofibres or nanotubes, β-SiC nanofibres or nanotubes, TiO₂ nanofibres or nanotubes.

They may be deposited on an intermediate structure selected in the group consisting of glass fibres, carbon fibres, SiC foams, carbon foams, alveolar β-SiC foams, said intermediate structure filling the reaction chamber of said reactor at least partially.

An apparatus and method for attaching photovoltaic solar panels to a roof system surface. Thin film flexible panels are attached using a hook and loop system in which either the hook or loop material is attached to the underside of panel, and the other of the hook and loop material is attached the roof. Solar panels that are encased in a frame are attached using the hook and loop material directly to the roof system structure, or to an intermediate structure, which is in turn attached to the roof system surface. The method also determines the amount of mated hook and loop material that must be attached to each installed panel to ensure that the installed panels will be able to withstand the wind pressure uplift force required, and to ensure that in the event unexpected and excessive uplift force is ever encountered, the panels separate at the hook and loop interface. For roof system surfaces using a multiply layer membrane material, the hook or loop material can be directly attached to the membrane during its manufacturing process to eliminate the need of doing so at the job site.

Methods of fabricating semiconductor devices or structures include bonding a layer of semiconductor material to another material at a temperature, and subsequently changing the temperature of the layer of semiconductor material. The another material may be selected to exhibit a coefficient of thermal expansion such that, as the temperature of the layer of semiconductor material is changed, a controlled and/or selected lattice parameter is imparted to or retained in the layer of semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a layer of semiconductor material having an average lattice parameter at room temperature proximate an average lattice parameter of the layer of semiconductor material previously attained at an elevated temperature.

A portable electronic device that provides compact configurations for audio elements are disclosed. The audio elements can be drivers (e.g., speakers) or receivers (e.g., microphones). In one embodiment, an audio element can be mounted on or coupled to an intermediate structure (e.g., a flexible electrical substrate) having an opening therein to allow audio sound to pass there through. In another embodiment, an audio chamber can be formed to assist in directing audio sound between an opening an outer housing and a flexible electronic substrate to which the audio element is mounted or coupled thereto. In still another embodiment, a barrier, such as a mesh barrier, can be provided in an opening of an outer housing so that undesired foreign substances can be blocked from further entry into the opening in the outer housing.

A micro-transfer printed intermediate structure comprises an intermediate substrate and one or more pixel structures disposed on the intermediate substrate. Each pixel structure includes an LED, a color filter, and a fractured pixel tether physically attached to the pixel structure. A fractured intermediate tether is physically attached to the intermediate substrate. A method of making an intermediate structure source wafer comprises providing a source wafer having a patterned sacrificial layer including sacrificial portions separated by anchors, disposing an intermediate substrate over the patterned sacrificial layer, and disposing one or more pixel structures on the intermediate substrate entirely on or over each sacrificial portion. Each pixel structure includes an LED, a color filter, and a fractured pixel tether physically attached to the pixel structure to form an intermediate structure.

A system and method for handling conflicts during structure synchronization. Conflicts are identified as the structure moves through the synchronization process. An intermediate structure is generated on a format of a target structure. A proposal for resolution of the identified conflicts is created. The conflicts and proposed resolutions are presented to a user. Proposals accepted by the user are applied to the intermediate structure.