522 results about "Selective deposition" patented technology

Various embodiments described herein relate to methods, apparatuses, and systems for post-development treatment of a metal-containing photoresist mask to improve lithographic performance. After development, the metal-containing photoresist mask may be exposed to one or more of the following treatments: thermal anneal, plasma exposure, exposure to reactive gases, and selective deposition of a protective film. In some embodiments, the metal-containing photoresist mask is exposed to one or more reactive gases to compositionally change the photoresist mask and / or selectively deposit a protective film on top surfaces and sidewalls of the photoresist mask. The treated photoresist mask may exhibit increased line CD for reduced dose-to-size and improved etch resistance.

Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related apparatus.

Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related apparatus.

Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing titanium nitride (TiN) in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as finFETs, GAAs, and the like, without creating a seam. The methods include selective deposition processes using blocking compounds in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.

Methods for selective deposition are described herein. The method includes depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface, and a metal silicide surface. The method further includes selectively depositing a molybdenum film on a second portion of the surface of the substrate, the second portion having no oxide deposited thereon.

A method is presented forming a fully-aligned via (FAV) and airgaps within a semiconductor device. The method includes forming a plurality of copper (Cu) trenches within an insulating layer, forming a plurality of ILD regions over exposed portions of the insulating layer, selectively removing a first section of the ILD regions in an airgap region, and maintaining a second section of the ILD regions in a non-airgap region. The method further includes forming airgaps in the airgap region and forming a via in the non-airgap region contacting a Cu trench of the plurality of Cu trenches.

Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

Provided is a plasma processing method and device capable of controlling the etching mask shape during a single-step process that etches a target material disposed below the etching mask. The plasma processing method includes performing selective deposition on the etching mask in separate phases, which are controlled via a periodic bias voltage signal. By tuning the bias voltage power, duration and timing, the mask height and width can be controlled and stabilized while etching on the substrate proceeds. Thus, the present method provides an etching process that allows fine control of the etching mask shape for small pattern sizes and provides high etching selectivity through deposition.

Method to form low-contact-resistance contacts to source / drain features are provided. A method of the present disclosure includes receiving a workpiece including an opening that exposes a surface of an n-type source / drain feature and a surface of a p-type source / drain feature, selectively depositing a first silicide layer on the surface of the p-type source / drain feature while the surface of the n-type source / drain feature is substantially free of the first silicide layer, depositing a metal layer on the first silicide layer and the surface of the n-type source / drain feature, and depositing a second silicide layer over the metal layer. The selectively depositing includes passivating the surface of the surface of the n-type source / drain features with a self-assembly layer, selectively depositing the first silicide layer on the surface of the p-type source / drain feature, and removing the self-assembly layer.

Method for area selective deposition (ASD) on a substrate containing a growth surface that is exposed and a non-growth surface that is exposed. The method includes cyclical exposures of a deposition gas containing a metal carbonyl precursor, the metal carbonyl precursor decomposing on the growth surface such that a metal film is deposited on the growth surface and carbon monoxide (CO) gas is released, and an inhibitor gas after stopping the flow of the deposition gas to the substrate. The cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate is repeated to selectively form the metal film on the growth surface relative to the non-growth surface, where the inhibitor gas increases the selectivity of the metal film formed on the growth surface when compared to the selectivity of the metal film formed on the growth surface without the inhibitor gas.

Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å / min.

The current disclosure relates to methods and assemblies for selectively depositing metal-containing materials, such as metal oxides, on different surfaces of a semiconductor substrate by cyclic vapor deposition techniques, including atomic layer deposition. The metal-containing material is deposited using a metal precursor having a metal atom bound to an acetamidinato ligand, such as dialkylacetamidinato ligand. The metal-containing material may be deposited on a metal surface relative to a dielectric surface, or to a dielectric surface relative to a metal surface, depending on the process flow. The current disclosure further relates to layers, structures and semiconductor devices deposited according to the methods disclosed herein, as well as to semiconductor processing assemblies configured and arranged to perform said methods.

Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

The present disclosure provides embodiments of processes and methods for stabilizing self-assembled monolayers (SAMs). In the present disclosure, a cyclic vapor deposition process is used to selectively deposit a polymer thin film on a SAM structure formed on a target material. The polymer thin film selectively deposited on the SAM structure stabilizes the SAM structure by: (a) healing defects in the SAM structure and providing blanket coverage over the target material surface, (b) preventing migration of SAM-forming molecules to neighboring non-target surfaces, and (c) increasing the thickness and rigidity of the SAM structure. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the SAM structure.

Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising siliconcontaining films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.

The invention provides a method for depositing silicon nitride on the side wall of a groove structure, and belongs to the technical field of semiconductor manufacturing. The method comprises the following steps of: depositing carbon-containing barrier layers on the top, the side wall and the bottom of a groove structure by utilizing inductively coupled plasma enhanced chemical vapor deposition, and then carrying out directional etching on the side wall of the groove by utilizing ammonia plasma bombardment, so that the carbon-containing barrier layers on the side wall of the groove are accurately removed, and the barrier layers in the top and bottom areas are kept complete; and finally, using inductively coupled plasma to enhance atomic layer deposition, and selectively depositing a silicon nitride film in the side wall area of the groove. The method does not need to depend on traditional photoetching and etching steps, non-target area deposition is avoided, the technological process is simplified, the deposition precision and the critical dimension control capability are improved, and the method has the dual control effects of precise directional etching and selective deposition.

The invention relates to a preparation method of heterostructure porous carbon, which comprises the following steps: (S1) dipping a porous carbon precursor in a solution of a graphitization catalyst, and after dipping, carrying out solid-liquid separation and drying to obtain solid powder; carrying out heat treatment on the solid powder in an inert atmosphere at 800-1100 DEG C to obtain surface-graphitized heterostructure carbon; (S2) chemically activating the heterostructure carbon by using a strong alkali activator to obtain a heterostructure porous carbon intermediate; and (S3) physically activating the heterostructure porous carbon intermediate by using a physical activator to obtain the heterostructure porous carbon. According to the method, the porous carbon precursor is firstly subjected to surface graphitization, and then activated by the strong alkali activating agent to open pores and activated by the physical activating agent to expand pores, so that the heterostructure porous carbon with a graphitized surface and high internal porosity and high activity is prepared, selective deposition is realized during vapor phase silicon deposition, and the problem of floating silicon is fundamentally solved; therefore, the electrochemical performance is excellent.

The invention relates to a novel silicon-carbon material and a preparation method and application thereof, the silicon-carbon material comprises a graphite substrate, a silicon layer coating the outer surface of the graphite substrate and a silicon carbide layer coating the outer surface of the silicon layer, and a graphite-silicon-silicon carbide three-layer composite structure is formed; wherein the silicon layer and the silicon carbide layer are formed by one-time continuous deposition through a chemical vapor deposition process; the silicon carbon material is applied to a negative electrode material of a lithium ion battery. According to the novel silicon-carbon material as well as the preparation method and the application thereof, a single chemical vapor deposition process is adopted, and selective deposition of a silicon material and a silicon carbide material is realized by accurately regulating and controlling the hydrogen content in a deposition atmosphere on the premise of not changing equipment and raw materials; according to the method, the novel silicon carbon material with the SiC coated silicon structure (SiC coated Si / G) is successfully prepared.

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

The invention relates to a selective deposition method and deposition equipment of a metal molybdenum film. The method comprises the following steps: a treatment piece is provided with an exposed active surface and an inert surface, and a deposition selection ratio exists between the active surface and the inert surface; the treated part is placed in a reaction chamber for multiple deposition treatment steps, and the deposition treatment steps comprise the steps that carrier gas carries a molybdenum halide precursor containing no oxygen element to enter the reaction chamber, and the carrier gas and the active surface are adsorbed; after the molybdenum halide precursor and the active surface are adsorbed, carrying out first purging treatment on the treated part; after carrying out the first purging treatment, introducing a reductive co-reactant into the reaction chamber, and reducing the molybdenum halide precursor adsorbed on the active surface into a metal molybdenum layer; after the metal molybdenum layer is reduced, carrying out second purging treatment on the reaction chamber and the treatment piece; and after the multiple deposition treatment steps are carried out, the multiple metal molybdenum layers formed in the multiple deposition treatment steps are used as metal molybdenum films. And the conductivity and the forming quality of the metal molybdenum film are improved.

The disclosure relates to methods of selectively depositing an oxide material layer on a first surface of a semiconductor substrate relative to a second surface of the same substrate, to semiconductor processing assemblies, as well as to oxide material layers, structures and devices comprising an oxide material layer deposited according to the current disclosure. In the method, an oxide material layer is selectively deposited using a first precursor and an oxygen precursor. The second surface may be passivated against deposition of oxide material.

A method of processing a substrate that includes: flowing a gas including a fluorocarbon to a plasma processing chamber; sustaining a plasma generated from the gas; depositing a carbonaceous layer over the substrate by exposing the substrate to the plasma, the substrate having a recess having an aspect ratio between 10:1 and 100:1, the depositing including a pulsed plasma process including: during a first time duration, setting a source power (SP) at a first SP level and a bias power (BP) at a first BP level, where the plasma includes fluorocarbon ions polymerizing on a bottom surface to form the carbonaceous layer, and during a second time duration, setting the SP at a second SP level higher than the first SP level and the BP at a second BP level lower than the first BP level, where the plasma includes fluorine radicals trimming the carbonaceous layer.

Methods of using high-purity alkynes substantially free of residual alkyl halides, water and / or carboxylic acids and their use (e.g., in formulations) for enhanced passivation of metallic substrates.

Provided are methods for low temperature thermal deposition of silicon-containing films. The methods provide selective deposition on a variety of substrates with high deposition rates and short cycle times.

Area selective deposition of aluminum-based films using alkyl aluminum amidinate precursors and methods thereof are provided. Area selective deposition comprises depositing an alkyl aluminum amidinate precursor on a substrate with a first surface portion comprising a metal and a second surface portion comprising a non-metal to form an aluminum-based film on the substrate. The aluminum-based film will be located on the second surface portion of the substrate and when the aluminum-based film is located on the first surface portion, a ratio of an average thickness of the film on the first surface portion to an average thickness of the film on the second surface portion is less than 1.

The present inventive concept relates to area-selective deposition (ASD) area-selective atomic layer deposition (AS-ALD) processes, and applications thereof. Methods of selectively depositing metal oxides and metal oxynitrides, such as TiO2 and TiON, on nitride (SiN) as a growth area vs. oxide (SiO2) as a nongrowth area, and applications thereof in, for example, self-aligned block (SAB) patterning and self-aligned multiple patterning (SAMP) processes are described.

Methods of selectively depositing a passivation layer on a metal surface of a semiconductor substrate are described. Exemplary methods may include exposing the semiconductor substrate having a metal surface and a non-metal surface to a first precursor to form a first portion of the passivation layer on the metal surface, the first precursor including an isonitrile. The exemplary methods may further include exposing the semiconductor substrate comprising a metal surface and a non-metal surface to a second precursor to form the passivation layer on the metal surface. The second precursor may include an amine, an alcohol, or a thiol.

Embodiments of this disclosure relate to a method for selectively depositing polysilicon after forming a fluid polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). A fluid polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and at least one side wall. The fluid polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiO₂) on the bottom. x ) forms a layer, and a silicon (Si) layer or a second silicon oxide (SiO) layer x The ) layer is the first silicon oxide (SiO x It is deposited on top of layers.

A method (200) for selectively forming a low-k dielectric film (140) on an exposed dielectric position (130) in a substrate (10), the method (200) comprising: selectively depositing (210) a metal-containing film (110) on the exposed dielectric position (130) using an area selective deposition method using one or more deposition cycles; providing (220) at least one organic ligand vapor to the deposited metal-containing film (110) at least once to cause a gas phase chemical reaction, thereby obtaining a metal-organic framework (140), the metal-organic framework (140) being a low-k dielectric film (140), wherein the low-k dielectric film (140) has a gap (142) at a position where the metal-containing film is not deposited.