The invention relates to the field of photovoltaic technology, and discloses an interface optimization method for a front-surface seed-layer-free
electrode of a photovoltaic
cell and a photovoltaic device. The method comprises the following steps: placing a
silicon substrate in PECVD (
Plasma Enhanced
Chemical Vapor Deposition) equipment, and depositing a SiOxNy composite
passivation layer with the thickness of 1-10nm on the surface of a transparent conducting layer on the front surface of the
silicon substrate through
plasma in-situ deposition; printing low-temperature sintered
copper paste of which the
sintering temperature is less than or equal to 200 DEG C onto the surface of the SiOxNy composite
passivation layer; and curing the printed low-temperature sintered
copper paste to obtain the front
copper electrode. According to the method, a front seed layer is abandoned, direct combination of a front
copper electrode and a front transparent conducting layer of a
silicon substrate is achieved, an efficient interface inhibition
passivation tunneling layer (namely a thin SiOxNy composite passivation layer) is constructed to block a copper-silicon mutual expansion path, interface contact characteristics are optimized, low-temperature
sintering type copper paste is matched,
contact resistance is reduced, stability is improved, the whole process is low in temperature, and the method is suitable for large-scale production. The method is compatible with an HJT battery manufacturing
system and is low in metallization cost.