A new
DRAM architecture, HPPC
DRAM, is provided to support a high performance and low cost memory
system. The HPPC
DRAM has integrated the following concepts into a single
DRAM chip. First, superset pin definitions backward-compatible to the traditional fast-page-mode DRAM SIMM. This allows one
memory controller to support a memory
system having both a traditional fast-page-mode DRAM and HPPC DRAM of this invention. Secondly, combining a
memory array, a register of 4:1 Mux / Demux function, a RAS buffer / decoder, a CAS buffer / decoder, a burst address counter, a page register /
comparator, a sequencer and a
data buffer into a single DRAM IC
chip. Using these intelligent
peripheral circuits, the HPPC DRAM execute a pipeline cycle request and precharge cycle stealing. Thirdly, a precharge cycle stealing pipeline is implemented to the timing chain of read operation to eliminate the precharge
cycle time which is achieved by executing read drive concurrently to the precharge cycle. This read timing chain shows that a zero
wait state is sustained if there is a page-hit. Fourthly, a precharge cycle stealing pipeline is implemented to the timing chain of write operation to eliminate the precharge
cycle time which is achieved by executing precharge cycle concurrently to address predecoding and data strobing.