2results about How to "Avoid capture" patented technology

A semiconductor structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composite barrier layer. The buffer layer is on the substrate. The channel layer is on the buffer layer. The barrier layer is on the channel layer. The doped compound semiconductor layer is on the barrier layer. The composite barrier layer is on the doped compound semiconductor layer, the composite barrier layer and the barrier layer include the same group III element, and an atomic percentage of the same group III element in the composite barrier layer increases as the composite barrier layer moves away from the doped compound semiconductor layer.

The application discloses a recess type group III nitride heterojunction high-speed photoelectric detector, and a preparation method thereof. The structure of the detector comprises a substrate, a buffer layer, a channel absorption layer and a barrier layer which are sequentially grown from bottom to top on the substrate, and ohmic contact electrode layers which are respectively arranged at two ends of the barrier layer. A recess exposing the channel absorption layer is arranged between the two ohmic contact electrode layers. The channel absorption layer and the barrier layer are made of unintentionally doped group III nitride, and the channel absorption layer and the barrier layer are a heterostructure in which negative polarization charges or positive polarization charges are generated at an interface. The device has the advantages of low dark current, high gain and fast response, and has a wide application prospect.