9results about How to "Avoid capture" patented technology

The invention relates to the technical field of Internet of Vehicles, and discloses a vehicle end data processing method, a monitoring system, a domain controller, a medium and a product. The method comprises the following steps: acquiring a data packet monitoring program corresponding to a vehicle end network and an original socket; loading the data packet monitoring program to a kernel mode space, and binding the data packet monitoring program with the original socket to obtain a target socket; and monitoring each network data packet passing through the target socket, filtering out the target data packet from each network data packet by using the data packet monitoring program, and reading data in the target data packet to the user mode space. By implementing the technical scheme of the invention, memory resources are saved, the performance overhead is saved, the flexibility of data packet filtering is improved, the running stability and running safety of the vehicle-side operating system are improved, and the running effect of the vehicle-side operating system is ensured.

The invention discloses a high-durability FeFET based on a ferroelectric semiconductor channel and an anti-ferroelectric gate dielectric and a preparation method of the high-durability FeFET. A back gate electrode layer, an anti-ferroelectric gate dielectric layer, a ferroelectric semiconductor channel layer, a top gate high-k gate dielectric layer and a top gate electrode layer are sequentially stacked in a FeFET structure, and the anti-ferroelectric gate dielectric layer serves as a back gate dielectric layer; the top gate high-k gate dielectric layer serves as a top gate dielectric layer, the thickness of the back gate dielectric layer is larger than that of the top gate dielectric layer, and an asymmetric double-gate structure is formed. According to the invention, the hafnium oxide-based anti-ferroelectric thin film is used for replacing a ferroelectric thin film as a gate medium of the FeFET, so that the operation voltage is effectively reduced; no interface layer is arranged between the ferroelectric semiconductor channel and the anti-ferroelectric gate dielectric, so that durability failure caused by charge trapping and defect generation associated with the traditional FeFET and the interface layer is inhibited; the out-of-plane spontaneous polarization continuous, precise and adjustable characteristic of a ferroelectric semiconductor channel and the gate storage mode and the channel storage mode which are switched mutually based on the asymmetric double-gate structure of the FeFET are hopeful to enable the FeFET to show higher durability.

The invention discloses an insurance fraud detection method, a related device, equipment and a storage medium, and the method comprises the steps: carrying out the feature extraction based on to-be-detected insurance data, and obtaining a first scale feature, a second scale feature, and a first fusion feature of the first scale feature and the second scale feature; based on the first fusion feature, predicting to obtain a first weight representation and a second weight representation; obtaining a second fusion feature based on a weighted feature of the first scale feature by the first weight representation and a weighted feature of the second scale feature by the second weight representation; performing classification prediction based on the second fusion feature to obtain a detection result of the to-be-detected insurance data; wherein the detection result at least comprises whether the to-be-detected insurance data is suspected of fraud. According to the scheme, the insurance fraud detection efficiency and precision can be improved, and the insurance fraud detection cost is reduced.

A semiconductor structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composite barrier layer. The buffer layer is on the substrate. The channel layer is on the buffer layer. The barrier layer is on the channel layer. The doped compound semiconductor layer is on the barrier layer. The composite barrier layer is on the doped compound semiconductor layer, the composite barrier layer and the barrier layer include the same group III element, and an atomic percentage of the same group III element in the composite barrier layer increases as the composite barrier layer moves away from the doped compound semiconductor layer.

The invention belongs to the technical field of semiconductor devices, and particularly relates to a preparation method of a semiconductor X-ray detector, by adopting a PNN type double built-in electric field configuration with the free electron density increasing step by step, the intensity of built-in electric fields is enhanced, meanwhile, the electron transporting capacity of the built-in electric fields is expanded, and under the condition that no external power supply exists, the performance of the X-ray detector is improved. Self energy supply is achieved through the Compton effect and the photovoltaic effect of the X-rays, and detection of the X-rays is completed. A built-in electric field of the detector is strong enough, absorption of X-ray energy and transport of carriers are better than those of a traditional X-ray detector, and detection is sensitive; as the detector is not provided with a power supply, the detector has the technical effects of no power consumption, low failure rate, light weight, small size and convenience in carrying. The invention also provides a non-transitory readable recording medium storing the program of the method and a system comprising the medium, and the program can be called through a processing circuit to execute the method.

The invention discloses an amphiphilic compound and a pharmaceutical composition thereof. The compound has a structure of formula I, wherein the cyclic disulfide can undergo dynamic covalent disulfide bond exchange with the thiol on the extracellular surface to mediate its entry into the cytoplasm; betaine has cationic and anionic charge groups, and forms a strong hydration layer through electrostatic interaction. The amphiphilic compound with the betaine structure makes the cyclic disulfide easy to be exposed to the surface of the nanocarrier and achieves the effect of anti-protein adsorption, thereby prolonging the blood circulation time. The nanocarrier modified with the functionalized amphiphilic compound can efficiently and stably deliver the drug directly to the cytoplasm through a non-endocytic pathway.

The invention discloses an enhanced AlGaN / GaN HEMT (High Electron Mobility Transistor) device comprising an embedded layer. Comprising a silicon substrate, a nucleating layer, a buffer layer, a P embedding layer, an N embedding layer, a channel layer, a barrier layer, a passivation layer, a source electrode, a drain electrode, a p-GaN layer and a grid electrode, wherein the silicon substrate, the nucleating layer, the buffer layer, the P embedding layer, the N embedding layer, the channel layer, the barrier layer and the passivation layer are stacked from bottom to top; the drain electrode extends from the surface of the passivation layer to the upper surface of the channel layer and is in direct electric contact with the channel layer, the barrier layer and the passivation layer. And the p-GaN layer is embedded into the passivation layer until the p-GaN layer is in contact with the upper surface of the barrier layer. The source electrode extends into the P-type embedded layer from the surface of the passivation layer and is in direct electric contact with the P-type embedded layer, the N-type embedded layer, the channel layer, the barrier layer and the passivation layer. According to the invention, the dynamic on-resistance characteristic of the device is optimized while the off-state voltage endurance capability of the device is improved and the output characteristic is not lost.

The invention discloses an epitaxial structure of a semiconductor power chip and a radio frequency chip, which sequentially comprises a substrate, a channel layer and a barrier layer from bottom to top, and a two-dimensional electron gas layer is formed on the interface of the channel layer and the barrier layer; the rising angle of the valley position of the effective mass of the light hole of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer to the barrier layer direction is alpha, and the rising angle of the valley position of the deformation potential of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer to the barrier layer direction is beta, the descending angle from the peak position of the volume elastic modulus of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer to the direction of the barrier layer is gamma, and the ascending angle from the valley position of the peak rate electric field of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer to the direction of the barrier layer is theta. The current density and the breakdown field strength of the GaN power device are improved, the capacitance and the resistance of the device are reduced, and the voltage withstanding characteristic of the power device is improved.

The application discloses a recess type group III nitride heterojunction high-speed photoelectric detector, and a preparation method thereof. The structure of the detector comprises a substrate, a buffer layer, a channel absorption layer and a barrier layer which are sequentially grown from bottom to top on the substrate, and ohmic contact electrode layers which are respectively arranged at two ends of the barrier layer. A recess exposing the channel absorption layer is arranged between the two ohmic contact electrode layers. The channel absorption layer and the barrier layer are made of unintentionally doped group III nitride, and the channel absorption layer and the barrier layer are a heterostructure in which negative polarization charges or positive polarization charges are generated at an interface. The device has the advantages of low dark current, high gain and fast response, and has a wide application prospect.