524 results about "Compound semiconductor" patented technology

The invention relates to an LED display device based on vertical stacking and a preparation method thereof, the display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one is a non-common-pole contact; the electric connectors comprise common-pole conductive parts and non-common-pole conductive parts, the non-common-pole conductive parts are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive parts are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises an interconnection conductive part, the interconnection conductive parts are located in the corresponding pixel layers, at least one interconnection conductive part comprises a core body, the core body is a compound semiconductor, and the core body is located in the first inner fence. The invention further discloses a preparation method. The production efficiency and quality of the LED display device can be improved.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof. The display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one of the first type of electrode contact and the second type of electrode contact on the driving backboard is a non-common-pole contact; the non-common-pole conductive pieces are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive pieces are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises at least one interconnection conductive part, a compound semiconductor region is arranged in the pixel layer where the interconnection conductive part is located, a backfill hole is formed in the compound semiconductor region, and the backfill hole is filled with the interconnection conductive part. The invention further discloses a preparation method. The stability and reliability of the LED display device can be improved, and the LED display device is more convenient to process.

The invention relates to an LED display device and a preparation method, the LED display device comprises a substrate and a pixel layer, the pixel layer comprises pixel units, the periphery of each pixel unit is at least surrounded by an annular partition groove, each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit, and the outermost annular partition groove of each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit. A compound semiconductor is reserved in the non-overlapping area, or a compound semiconductor is reserved between each pixel unit and the outermost annular partition groove of the adjacent pixel unit, so that the pixel units and the adjacent pixel units are completely separated from each other; the top of each pixel unit is electrically connected with the corresponding second-type electrode contact, the bottom of each pixel unit is electrically connected with the corresponding first-type electrode contact, and the second-type electrode contacts are formed on the periphery of the outermost annular partition groove of the corresponding pixel unit. The invention further discloses a preparation method of the LED display device. The heat dissipation capacity of the LED device can be effectively improved, the LED device can emit light stably, and the photoelectric performance and the reliability of the LED display device are guaranteed.

[Problem] To provide a semiconductor substrate that comprises a group III-V compound semiconductor having few crystal defects above a group IV semiconductor substrate, a semiconductor device, and a method for manufacturing the semiconductor device. [Solution] The semiconductor substrate according to the present disclosure comprises a group IV semiconductor substrate, a first material layer that includes a group III-V material or a group II-VI material provided on the group IV semiconductor substrate, a first two-dimensional substance layer that is provided on the first material layer, and a second material layer that includes a group III-V material provided above the first two-dimensional substance layer.

A compound transistor comprises a first transistor structure and a second transistor structure. The first transistor structure includes a collector layer, a base layer on the collector layer, an emitter layer on a first portion of the base layer, and a base metal contact on a second portion of the base layer. The second transistor structure includes a channel layer directly on a first portion of the emitter layer and a barrier layer on the channel layer. A plurality of electrodes including a source, a gate, and a drain are formed on the barrier layer such that the source is electrically coupled to the base metal contact.

Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

The invention relates to an LED display device and a preparation method, the LED display device comprises a substrate and a pixel layer, the pixel layer comprises pixel units, the periphery of each pixel unit is at least surrounded by an annular partition groove, each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit, and the outermost annular partition groove of each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit. The compound semiconductor is reserved in the non-overlapping region; or, a compound semiconductor is reserved between each pixel unit and the outermost annular partition groove of the adjacent pixel unit, so that the pixel units and the adjacent pixel unit are completely separated from each other; the top of each pixel unit is electrically connected with the second type of electrode contacts, the bottom of each pixel unit is electrically connected with the first type of electrode contacts, the projection area of each pixel unit on the substrate is defined as a first projection area, and the second type of electrode contacts are formed in the first projection area of the corresponding pixel unit. The invention further discloses a preparation method of the LED display device. The photoelectric performance and the reliability of the LED display device can be improved.

The invention relates to an LED display device and a preparation method thereof. The LED display device comprises a substrate, the substrate is a driving wafer, a pixel layer is a compound semiconductor layer, the pixel layer is located on the upper portion of the substrate, pixel units and interconnection conductive parts are arranged in the pixel layer, the tops of the pixel units are electrically connected with corresponding second-type electrode contacts through the interconnection conductive parts, and the second-type electrode contacts are electrically connected with the pixel units through the interconnection conductive parts. The bottoms of the pixel units are electrically connected with the corresponding first type of electrode contacts; wherein the compound semiconductor layer is provided with a second type of electrode filling hole, the second type of electrode filling hole is internally provided with an interconnection conductive piece, and the interconnection conductive piece is a metal piece. The invention further discloses a preparation method. According to the invention, the heat dissipation capability of the whole LED device is effectively improved, the preparation process is simplified, the production cost is reduced, and the production efficiency is improved.

Provided are a radiation detection element, a radiation detector, and a production method for the radiation detection element that make it possible to measure the energy of radiation with favorable accuracy. A radiation detection element according to the present invention includes: a compound semiconductor crystal substrate that comprises cadmium zinc telluride to which indium has been added as an impurity; and a metal electrode that is provided on the surface of the compound semiconductor crystal substrate. The energy resolution for gamma rays of 122 keV emitted from 57Co is no more than 7%.

According to the high-stability laser provided by the invention, the multi-quantum well resonance region is arranged in the laser chip, and the structure ensures that each quantum well in the multi-quantum well resonance region is strictly positioned at the wave crest of a laser standing wave field, so that the maximum gain is formed. When the wavelength is smaller than or larger than the laser wavelength, each quantum well deviates from the wavelength of the standing wave field, and the maximum gain cannot be obtained. Therefore, the structure can effectively suppress oscillation of other wavelengths and ensure that the wavelength of the output laser is stable and unchanged. Secondly, a compound semiconductor material is adopted as a gain material, and the compound semiconductor material has very short upper energy level lifetime and the gain in parabola regular distribution, so that when the laser generates oscillation, only the mode with the maximum gain forms laser oscillation, and no intense mode competition exists, thereby ensuring that the mode of the output laser beam does not generate random jump, and improving the laser output efficiency. Therefore, the intensity of the output laser is stable.

An optoelectronic semiconductor body with a semiconductor layer sequence (2) based on a lll-V compound semiconductor material is specified, wherein: - the semiconductor layer sequence (2) comprises an n-doped layer (21) doped with a group VI dopant; - the semiconductor layer sequence (2) comprises an active region (20) configured to emit and / or absorb radiation; - the semiconductor layer sequence (2) comprises an interlayer (23) between the active region (20) and the n-doped semiconductor layer (21); and - the interlayer (23) comprises phosphorus (P) and at least one further group V material, preferably arsenic (As). An optoelectronic semiconductor chip (1) comprising the same is also specified. Finally, methods of producing the same are also specified.

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

The invention provides a wafer defect double-sided synchronous detection optical module and device, and relates to the technical field of semiconductor material surface defect nondestructive detection. The wafer defect double-sided synchronous detection optical module and the wafer defect double-sided synchronous detection optical module and the wafer defect double-sided synchronous detection optical module have the advantages that detection optical paths can be designed according to characteristics of third-generation compound semiconductor materials and classified statistics of common defects, various optical response mechanisms are integrated, and synchronous detection of the upper surface and the lower surface of a to-be-detected sample is realized.

The invention discloses a compound semiconductor photoresist stripper, and a preparation method, application and cleaning method thereof. The compound semiconductor photoresist stripper comprises the following components by weight: 30-60 parts of a metal protective polar organic solvent; 30-60 parts of an aprotic polar organic solvent; 1-15 parts of a corrosion inhibitor; and 1-15 parts of an anionic surfactant. The invention not only discloses specific components and a preparation method of the compound semiconductor photoresist stripping liquid, but also discloses application of the compound semiconductor photoresist stripping liquid in effective removal of photoresist, and the compound semiconductor photoresist stripping liquid has a good protection effect on a substrate in the application. And corrosion can be effectively prevented. In addition, the two solvents are synergistically used, so that the photoresist can be more effectively removed.

The invention provides a preparation method of an N-polar gallium nitride material, which can be applied to the technical field of compound semiconductor materials. The method comprises the following steps: carrying out ion implantation on a Ga polar Si-based GaN wafer to a specified depth, bonding a GaN functional layer with a target wafer, and carrying out reinforcing annealing; stripping the GaN functional layer and the buffer layer from the Si substrate through stripping annealing; performing repair annealing on the stripped N-polarity GaN functional layer; and finally, removing the residual Si substrate and the buffer layer to obtain the N-polarity gallium nitride material on the target wafer. According to the method, mechanical polishing and chemical mechanical polishing processes are not needed, the GaN functional layer is prevented from being damaged, and therefore an alternative preparation scheme of the N-polarity gallium nitride material is achieved.

The present invention relates to single-crystal spherical carbon nanoparticles that are single-crystals, are spherical, and have an average particle diameter of 1 nm to 30 nm. The single-crystal spherical carbon nanoparticles of the present invention can generate fluorescence with a high fluorescence quantum efficiency when excited by a light in wide wavelength range from ultraviolet light to visible light, and have fluorescence quantum efficiency of 10% or more compared to conventionally known carbon nanoparticles. The single-crystal spherical carbon nanoparticles can be used for drug delivery, because they do not have toxicities to living organisms that compound semiconductors made of cadmium, selenium, tellurium, and the like have. Furthermore, since the single-crystal spherical carbon nanoparticles are spherical, they can be densely packed as electrode materials for solar cells and secondary ion batteries, and can be used for negative electrode for lithium ion batteries or electrode material for solar cells.

A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.

This apparatus for manufacturing a GaAs semiconductor device comprises: a first metal layer forming unit for forming a first metal layer 161 on a GaAs semiconductor structure 11 including a GaAs semiconductor as a Group III-V compound semiconductor containing gallium (Ga) as a Group III element and arsenic (As) as a Group V element; a laser beam irradiation unit for irradiating the first metal layer 161 with a laser beam in order to create an ohmic contact between the GaAs semiconductor structure 11 and the first metal layer 161; and a second metal layer forming unit for forming, on the first metal layer 161, a second metal layer 162 having a higher laser beam reflectance than the first metal layer 161 after irradiation with the laser beam.

A method for producing a nanoparticle is provided, the method comprising: - providing a colloidal substrate particle, - forming a shell comprising a III / V compound semiconductor material on the substrate particle, wherein the substrate particle comprises a material being different from the III / V compound semiconductor material. Further, a nanoparticle and an optoelectronic device are provided.

A photodetector device includes an avalanche photodiode array substrate 10 formed from compound semiconductor. A plurality of avalanche photodiodes 20 arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate 10. A circuit substrate 50 includes a plurality of output units 30 which are connected to each other in parallel to form at least one channel 40. Each of the output units 30 includes a passive quenching element 31 and a capacitative element 32. The passive quenching element 31 is connected in series to at least one of the plurality of avalanche photodiodes 20. The capacitative element 32 is connected in series to at least one of the avalanche photodiodes 20 and is connected in parallel to the passive quenching element 31.

An electronic device includes a substrate, a support body, and a conductive film. The substrate is a piezoelectric substrate or a compound semiconductor substrate including a first main surface with functional elements. The support body is provided at a second main surface of the substrate opposite to the first main surface and has a higher thermal conductivity than the substrate. The conductive film is located in a through hole extending through the support body and has a higher thermal conductivity than the support body.

Light-emitting diode (LED), with: a GaN-based N-type compound semiconductor layer (57, 157); a GaN-based P-type compound semiconductor layer (63, 161); and an active region (59, 89, 159) of a multi-quantum pot structure with alternating laminated InGaN pot layers (71, 171) and junction layers (74, 84a, 84b, 83c, 173, 175, 177, 179), wherein the active region (59, 89, 159) is arranged between the N-type and P-type compound semiconductor layers (57, 157, 63, 161), wherein at least one of the barrier layers (74, 84a, 84b, 83c, 173, 175, 177, 179) in the active region (59, 89, 159) has an InGaN barrier layer (73, 83a, 83b, 83c) and a Si-doped GaN barrier layer (75), a doping concentration of Si in the InGaN barrier layer (73, 83a, 83b, 83c) is lower than that of the Si-doped GaN barrier layer (75) and the Si-doped GaN barrier layer (75) is positioned closer to the P-type compound semiconductor layer (63, 161) than the InGaN barrier layer (73, 83a, 83b, 83c).

The utility model discloses compound semiconductor sputtering equipment and semiconductor equipment, and belongs to the technical field of semiconductors. The compound semiconductor sputtering equipment at least comprises a cavity; the at least one first target material is arranged on the first side in the cavity; the at least one second target material is arranged on the second side in the cavity; the at least one reaction gas source is used for introducing at least one reaction gas into the cavity; and the carrying table is arranged on the third side of the cavity, and a substrate is placed on the carrying table. According to the compound semiconductor sputtering equipment and the semiconductor equipment provided by the utility model, a multi-component compound film can be formed through reaction.

The invention provides a semiconductor laser element with improved service life. This semiconductor laser element is provided with: a first semiconductor layer which is a group III-V compound semiconductor layer containing at least As as a group V element; a second semiconductor layer on the first conductive side, which is a group III-V compound semiconductor layer containing at least P as a group V element, and which is disposed on the first semiconductor layer; a second conductive-side third semiconductor layer disposed on the second semiconductor layer; an active layer disposed between the second semiconductor layer and the third semiconductor layer; a window structure formed across the third semiconductor layer, the active layer, the second semiconductor layer, and the first semiconductor layer; a defect layer having a group III element of the first semiconductor layer and a group III element of the second semiconductor layer between the first semiconductor layer and the second semiconductor layer and including a defect in a region formed in the window structure; and an end surface that includes a defect layer that does not overlap the near-field pattern of the laser light on the end surface, or that overlaps only at the edge of the near-field pattern on the end surface, and that emits the laser light.

A dry etching method for indium-containing III-V compound semiconductor materials, relating to the field of semiconductor laser processing technology, solves the problem of volatile InCl during etching of indium-containing compound semiconductor laser materials in existing technologies. x Deposition leads to decreased etching rates, cavity contamination, and high-temperature assisted etching causes mask loss, morphology degradation, and process instability. This invention addresses these issues by setting a cycle program that alternates between etching and rinsing pulses. During the etching stage, H2 is introduced to suppress the formation of non-volatile InCl3 products and simultaneously convert InCl3 products into InCl2, effectively inhibiting byproduct formation and improving etching efficiency. During the physical rinsing stage, Ar is used to effectively remove non-volatile InCl3 adhering to the surface of the etched material. x The product exposes the semiconductor substrate, promoting chemical pulses to carry out chemical reactions to etch the substrate, effectively preventing cavity contamination and a decrease in etching uniformity, and significantly improving the controllability and repeatability of the etching morphology.

This semiconductor thin film structure comprises an Si layer (102) formed on an insulating layer (101), and a semiconductor layer (103). The Si layer (102) is composed of monocrystalline Si, and the planar orientation of the main surface is (110). The semiconductor layer (103) is composed of a group III-V compound semiconductor. The semiconductor layer (103) is grown through crystallization in a direction parallel to the surface of the insulating layer (101) from a side surface (104) of the Si layer (102). The side surface (104) can be a (-111) plane extending in the [1-12] direction of the Si layer (102). The side surface (104) can also be a (1-11) plane extending in the [1-1-2] direction of the Si layer (102).

A compound semiconductor device includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a passivation layer on the barrier layer, and a contact area recessed into the passivation layer and the barrier layer. The channel layer is partially exposed at a bottom of the contact area. A bi-layer silicide film is disposed on the contact area. A copper contact is disposed on the bi-layer silicide film.

The present invention provides a semiconductor device which has a layered structure comprising a first compound semiconductor layer, a second compound semiconductor layer that is superposed on the first compound semiconductor layer and is formed of a compound semiconductor which is different from that of the first compound semiconductor layer, an insulating layer that is superposed on the second compound semiconductor layer, and a gate electrode that is superposed on the insulating layer and is in contact with the second compound semiconductor layer through an opening provided in the insulating layer. In a cross-section obtained by cutting the semiconductor device along the stacking direction, the wall surface of the opening has two or more level differences.

A method (60) for forming a III-V compound semiconductor structure comprises: providing a GaSb substrate layer having an outer surface (61); and subjecting the outer surface to liquid hot water H2O, HW, at a temperature of the HW in the range of 90 ᵒC to 110 ᵒC, for example, in the range of 95 ᵒC to 105 ᵒC, for example, about 100 ᵒC, for an HW treatment period of at least 30 minutes, for example, 40 to 80 minutes, for example, about 50 minutes, about 60 minutes, or about 75 minutes.

A light emitting device according to one embodiment of the present disclosure includes: a driving substrate; a plurality of light emitting elements including a compound semiconductor and positioned in an array on one surface of the driving substrate, the plurality of light emitting elements each having a first surface facing the driving substrate and a second surface on an opposite side of the first surface and serving as a light exit surface; and a growth substrate forming a boundary with the compound semiconductor constituting the light-emitting elements, the boundary being free of lattice mismatch, and the growth substrate being in contact with the second surfaces of the plurality of light-emitting elements.