312 results about "Compound semiconductor" patented technology

The invention relates to an LED display device based on vertical stacking and a preparation method thereof, the display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one is a non-common-pole contact; the electric connectors comprise common-pole conductive parts and non-common-pole conductive parts, the non-common-pole conductive parts are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive parts are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises an interconnection conductive part, the interconnection conductive parts are located in the corresponding pixel layers, at least one interconnection conductive part comprises a core body, the core body is a compound semiconductor, and the core body is located in the first inner fence. The invention further discloses a preparation method. The production efficiency and quality of the LED display device can be improved.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof. The display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one of the first type of electrode contact and the second type of electrode contact on the driving backboard is a non-common-pole contact; the non-common-pole conductive pieces are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive pieces are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises at least one interconnection conductive part, a compound semiconductor region is arranged in the pixel layer where the interconnection conductive part is located, a backfill hole is formed in the compound semiconductor region, and the backfill hole is filled with the interconnection conductive part. The invention further discloses a preparation method. The stability and reliability of the LED display device can be improved, and the LED display device is more convenient to process.

The invention relates to an LED display device and a preparation method, the LED display device comprises a substrate and a pixel layer, the pixel layer comprises pixel units, the periphery of each pixel unit is at least surrounded by an annular partition groove, each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit, and the outermost annular partition groove of each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit. A compound semiconductor is reserved in the non-overlapping area, or a compound semiconductor is reserved between each pixel unit and the outermost annular partition groove of the adjacent pixel unit, so that the pixel units and the adjacent pixel units are completely separated from each other; the top of each pixel unit is electrically connected with the corresponding second-type electrode contact, the bottom of each pixel unit is electrically connected with the corresponding first-type electrode contact, and the second-type electrode contacts are formed on the periphery of the outermost annular partition groove of the corresponding pixel unit. The invention further discloses a preparation method of the LED display device. The heat dissipation capacity of the LED device can be effectively improved, the LED device can emit light stably, and the photoelectric performance and the reliability of the LED display device are guaranteed.

Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

The invention relates to an LED display device and a preparation method, the LED display device comprises a substrate and a pixel layer, the pixel layer comprises pixel units, the periphery of each pixel unit is at least surrounded by an annular partition groove, each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit, and the outermost annular partition groove of each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit. The compound semiconductor is reserved in the non-overlapping region; or, a compound semiconductor is reserved between each pixel unit and the outermost annular partition groove of the adjacent pixel unit, so that the pixel units and the adjacent pixel unit are completely separated from each other; the top of each pixel unit is electrically connected with the second type of electrode contacts, the bottom of each pixel unit is electrically connected with the first type of electrode contacts, the projection area of each pixel unit on the substrate is defined as a first projection area, and the second type of electrode contacts are formed in the first projection area of the corresponding pixel unit. The invention further discloses a preparation method of the LED display device. The photoelectric performance and the reliability of the LED display device can be improved.

The invention relates to an LED display device and a preparation method thereof. The LED display device comprises a substrate, the substrate is a driving wafer, a pixel layer is a compound semiconductor layer, the pixel layer is located on the upper portion of the substrate, pixel units and interconnection conductive parts are arranged in the pixel layer, the tops of the pixel units are electrically connected with corresponding second-type electrode contacts through the interconnection conductive parts, and the second-type electrode contacts are electrically connected with the pixel units through the interconnection conductive parts. The bottoms of the pixel units are electrically connected with the corresponding first type of electrode contacts; wherein the compound semiconductor layer is provided with a second type of electrode filling hole, the second type of electrode filling hole is internally provided with an interconnection conductive piece, and the interconnection conductive piece is a metal piece. The invention further discloses a preparation method. According to the invention, the heat dissipation capability of the whole LED device is effectively improved, the preparation process is simplified, the production cost is reduced, and the production efficiency is improved.

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

The invention provides a wafer defect double-sided synchronous detection optical module and device, and relates to the technical field of semiconductor material surface defect nondestructive detection. The wafer defect double-sided synchronous detection optical module and the wafer defect double-sided synchronous detection optical module and the wafer defect double-sided synchronous detection optical module have the advantages that detection optical paths can be designed according to characteristics of third-generation compound semiconductor materials and classified statistics of common defects, various optical response mechanisms are integrated, and synchronous detection of the upper surface and the lower surface of a to-be-detected sample is realized.

The invention discloses a compound semiconductor photoresist stripper, and a preparation method, application and cleaning method thereof. The compound semiconductor photoresist stripper comprises the following components by weight: 30-60 parts of a metal protective polar organic solvent; 30-60 parts of an aprotic polar organic solvent; 1-15 parts of a corrosion inhibitor; and 1-15 parts of an anionic surfactant. The invention not only discloses specific components and a preparation method of the compound semiconductor photoresist stripping liquid, but also discloses application of the compound semiconductor photoresist stripping liquid in effective removal of photoresist, and the compound semiconductor photoresist stripping liquid has a good protection effect on a substrate in the application. And corrosion can be effectively prevented. In addition, the two solvents are synergistically used, so that the photoresist can be more effectively removed.

The present invention relates to single-crystal spherical carbon nanoparticles that are single-crystals, are spherical, and have an average particle diameter of 1 nm to 30 nm. The single-crystal spherical carbon nanoparticles of the present invention can generate fluorescence with a high fluorescence quantum efficiency when excited by a light in wide wavelength range from ultraviolet light to visible light, and have fluorescence quantum efficiency of 10% or more compared to conventionally known carbon nanoparticles. The single-crystal spherical carbon nanoparticles can be used for drug delivery, because they do not have toxicities to living organisms that compound semiconductors made of cadmium, selenium, tellurium, and the like have. Furthermore, since the single-crystal spherical carbon nanoparticles are spherical, they can be densely packed as electrode materials for solar cells and secondary ion batteries, and can be used for negative electrode for lithium ion batteries or electrode material for solar cells.

This apparatus for manufacturing a GaAs semiconductor device comprises: a first metal layer forming unit for forming a first metal layer 161 on a GaAs semiconductor structure 11 including a GaAs semiconductor as a Group III-V compound semiconductor containing gallium (Ga) as a Group III element and arsenic (As) as a Group V element; a laser beam irradiation unit for irradiating the first metal layer 161 with a laser beam in order to create an ohmic contact between the GaAs semiconductor structure 11 and the first metal layer 161; and a second metal layer forming unit for forming, on the first metal layer 161, a second metal layer 162 having a higher laser beam reflectance than the first metal layer 161 after irradiation with the laser beam.

A method for producing a nanoparticle is provided, the method comprising: - providing a colloidal substrate particle, - forming a shell comprising a III / V compound semiconductor material on the substrate particle, wherein the substrate particle comprises a material being different from the III / V compound semiconductor material. Further, a nanoparticle and an optoelectronic device are provided.

An electronic device includes a substrate, a support body, and a conductive film. The substrate is a piezoelectric substrate or a compound semiconductor substrate including a first main surface with functional elements. The support body is provided at a second main surface of the substrate opposite to the first main surface and has a higher thermal conductivity than the substrate. The conductive film is located in a through hole extending through the support body and has a higher thermal conductivity than the support body.

Light-emitting diode (LED), with: a GaN-based N-type compound semiconductor layer (57, 157); a GaN-based P-type compound semiconductor layer (63, 161); and an active region (59, 89, 159) of a multi-quantum pot structure with alternating laminated InGaN pot layers (71, 171) and junction layers (74, 84a, 84b, 83c, 173, 175, 177, 179), wherein the active region (59, 89, 159) is arranged between the N-type and P-type compound semiconductor layers (57, 157, 63, 161), wherein at least one of the barrier layers (74, 84a, 84b, 83c, 173, 175, 177, 179) in the active region (59, 89, 159) has an InGaN barrier layer (73, 83a, 83b, 83c) and a Si-doped GaN barrier layer (75), a doping concentration of Si in the InGaN barrier layer (73, 83a, 83b, 83c) is lower than that of the Si-doped GaN barrier layer (75) and the Si-doped GaN barrier layer (75) is positioned closer to the P-type compound semiconductor layer (63, 161) than the InGaN barrier layer (73, 83a, 83b, 83c).

The utility model discloses compound semiconductor sputtering equipment and semiconductor equipment, and belongs to the technical field of semiconductors. The compound semiconductor sputtering equipment at least comprises a cavity; the at least one first target material is arranged on the first side in the cavity; the at least one second target material is arranged on the second side in the cavity; the at least one reaction gas source is used for introducing at least one reaction gas into the cavity; and the carrying table is arranged on the third side of the cavity, and a substrate is placed on the carrying table. According to the compound semiconductor sputtering equipment and the semiconductor equipment provided by the utility model, a multi-component compound film can be formed through reaction.

The invention provides a semiconductor laser element with improved service life. This semiconductor laser element is provided with: a first semiconductor layer which is a group III-V compound semiconductor layer containing at least As as a group V element; a second semiconductor layer on the first conductive side, which is a group III-V compound semiconductor layer containing at least P as a group V element, and which is disposed on the first semiconductor layer; a second conductive-side third semiconductor layer disposed on the second semiconductor layer; an active layer disposed between the second semiconductor layer and the third semiconductor layer; a window structure formed across the third semiconductor layer, the active layer, the second semiconductor layer, and the first semiconductor layer; a defect layer having a group III element of the first semiconductor layer and a group III element of the second semiconductor layer between the first semiconductor layer and the second semiconductor layer and including a defect in a region formed in the window structure; and an end surface that includes a defect layer that does not overlap the near-field pattern of the laser light on the end surface, or that overlaps only at the edge of the near-field pattern on the end surface, and that emits the laser light.

A dry etching method for indium-containing III-V compound semiconductor materials, relating to the field of semiconductor laser processing technology, solves the problem of volatile InCl during etching of indium-containing compound semiconductor laser materials in existing technologies. x Deposition leads to decreased etching rates, cavity contamination, and high-temperature assisted etching causes mask loss, morphology degradation, and process instability. This invention addresses these issues by setting a cycle program that alternates between etching and rinsing pulses. During the etching stage, H2 is introduced to suppress the formation of non-volatile InCl3 products and simultaneously convert InCl3 products into InCl2, effectively inhibiting byproduct formation and improving etching efficiency. During the physical rinsing stage, Ar is used to effectively remove non-volatile InCl3 adhering to the surface of the etched material. x The product exposes the semiconductor substrate, promoting chemical pulses to carry out chemical reactions to etch the substrate, effectively preventing cavity contamination and a decrease in etching uniformity, and significantly improving the controllability and repeatability of the etching morphology.

This semiconductor thin film structure comprises an Si layer (102) formed on an insulating layer (101), and a semiconductor layer (103). The Si layer (102) is composed of monocrystalline Si, and the planar orientation of the main surface is (110). The semiconductor layer (103) is composed of a group III-V compound semiconductor. The semiconductor layer (103) is grown through crystallization in a direction parallel to the surface of the insulating layer (101) from a side surface (104) of the Si layer (102). The side surface (104) can be a (-111) plane extending in the [1-12] direction of the Si layer (102). The side surface (104) can also be a (1-11) plane extending in the [1-1-2] direction of the Si layer (102).

An optical device is provided with a first optical waveguide (100) and a second optical waveguide (120). The first optical waveguide (100) is provided with a lower cladding layer (101) and a first core (102) composed of Si. The second optical waveguide (120) is provided with a second core (121) composed of a compound semiconductor, and a cladding layer (122) composed of silicon oxide is formed on the second core (121). The second optical waveguide (120) overlaps the first optical waveguide (100) and is formed along the first optical waveguide (100). The second core (121) is supported in contact with the top of the first core (102).

Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.

The application discloses a transistor device, a semiconductor epitaxial structure and a preparation method thereof. The transistor device comprises a substrate, a compound semiconductor composite structure generating a two-dimensional electron gas, which is arranged on the substrate; a first cap layer arranged on the compound semiconductor composite structure; an insertion layer arranged on the first cap layer; a second cap layer arranged on the insertion layer; the band gap of the material of the insertion layer is greater than the band gap of the material of the first cap layer and the second cap layer; along the direction from the first cap layer to the second cap layer, the band gap of the material of the insertion layer first increases and then decreases; and a gate metal arranged on the second cap layer. In this way, the on-state gate leakage is reduced, the gate voltage resistance and the voltage swing of the device are increased, and the gate reliability of the device is improved.

This optical modulator includes a light absorbing layer (102) formed on a substrate (101). The light absorbing layer (102) is formed in a core shape extending in a predetermined direction on the substrate (101). The light absorbing layer (102) has a multiple quantum well structure made of a compound semiconductor. The multiple quantum well structure of the light absorbing layer (102) gradually changes such that the photoluminescence wavelength of the light absorbing layer (102) gradually increases from the light incident side toward the light emission side. The spacing between the photoluminescence wavelength on the light incident side and that on the light emission side of the light absorbing layer (102) can be 10 nm or more.

A light receiving element is used to receive an optical signal. The light receiving element includes a substrate having a silicon layer, and a photodiode formed of a III-V compound semiconductor and bonded to the silicon layer. The silicon layer includes a waveguide, a recess, an air gap, and a wall, the wall is provided between the recess and the air gap, the waveguide is connected to the wall, the waveguide and the recess are provided outside the photodiode, and the air gap is provided at a position overlapping the photodiode. The substrate includes a silicon substrate and a silicon oxide layer. The photodiode includes a light-absorbing layer.

To provide a photoelectric conversion element capable of achieving high voltage while avoiding reduction in photoelectric conversion efficiency.SOLUTION: The photoelectric conversion element includes a plurality of light absorption layers stacked on each other along a first axis and each including a compound semiconductor, and a tunnel junction layer provided between adjacent light absorption layers among the plurality of light absorption layers, the plurality of light absorption layers have band gaps different from each other, and the band gaps monotonically change along the first axis.SELECTED DRAWING: Figure 1

An integrated multiplexing measurement system for measuring semiconductor devices (compound semiconductors) includes a main body, a fringe interferometer device, a white light interferometer probe, and a color conjugate focus measurement probe. The fringe interferometer device, the white light interferometer probe, and the color conjugate focus measurement probe are disposed in the main body. The fringe interferometer device is used to measure the warpage, concavity, color, brightness distribution, shape, and distribution of high-nitrogen areas of semiconductor devices. The white light interferometer probe and the color conjugate focus measurement probe are disposed together. The white light interferometer probe measures the surface roughness and surface depth of semiconductor devices. The color conjugate focus measurement probe (dispersion probe) measures the surface roughness and thickness of semiconductor devices.

The present invention provides a compound semiconductor substrate that has: a quaternary light-emitting layer which is composed of (AlxGa1-x)yIn1-yP (wherein 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1) and in which at least an n-type cladding layer, an active layer, and a p-type cladding layer are sequentially stacked on an n-type GaP substrate; and a p-type GaP layer which is a window layer and is superposed on a second main surface of the quaternary light-emitting layer, the second main surface being on the opposite side of a first main surface which is on the n-type GaP substrate side. This compound semiconductor substrate is characterized in that, in the active layer, the p-type impurity concentration is 9 × 1015 (Atoms / cm3) or less, and the n-type impurity concentration is 7 × 1015 (Atoms / cm3) or less. Consequently, the present invention provides: a compound semiconductor substrate which has a quaternary light-emitting layer of AlGaInP, and which enables a light-emitting element to have good life characteristics of luminance during energization if applied thereto; and a method for producing the compound semiconductor substrate.

The invention provides a semiconductor device and a method for manufacturing the same, wherein a base electrode and surrounding wiring can be connected without crossing an emitter mesa while suppressing increase in base resistance. A base layer containing a compound semiconductor of a second conductivity type opposite to the first conductivity type is disposed on a surface facing the first direction of a collector layer containing a compound semiconductor of the first conductivity type. At least one emitter mesa containing a first conductivity type compound semiconductor and having a heterojunction with the base layer is disposed in a local region of the surface of the base layer facing the first direction. A collector electrode is disposed on a surface of the collector layer facing a second direction opposite to the first direction. An emitter electrode is disposed on a surface of the emitter mesa facing the first direction. The base electrode is disposed in a region where the emitter mesa is not disposed in a surface of the base layer facing the first direction. The base electrode includes a first layer and a second layer, which partially overlap each other, do not include a closed pattern in plan view, and continuously surround the emitter mesa as a whole.

A semiconductor optical device includes a substrate having an optical waveguide, a gain section formed of a compound semiconductor having an optical gain and bonded to an upper surface of the substrate, the gain section having a first mesa, and a first wiring line electrically connected to the gain section. The first mesa of the gain section is optically coupled to the optical waveguide. The substrate includes a first layer, a second layer, and a third layer. The first layer has a higher thermal conductivity than the second layer. The second layer is stacked on the first layer. The third layer is stacked on the second layer. A recess provided in the substrate extends through the third layer to the second layer in the thickness direction. The first wiring line extends from the first mesa of the gain section to the recess.

A power amplifier capable of appropriately suppressing an output voltage according to a temperature is provided. A first member including a semiconductor region is joined to a second member including a semiconductor region of a compound semiconductor system on a first surface of the first member. The second member includes an amplification circuit including a semiconductor element of a compound semiconductor system, and a plurality of clamp diodes connected in multiple stages and inserted between an output port of the amplification circuit and a ground line. The first member includes a switch connected between a lead-out point that is a point halfway through the plurality of clamp diodes connected in multiple stages and the ground line, a temperature sensor, and a switch control circuit that performs on-off control of the switch based on a measurement result of the temperature sensor. The lead-out point is connected to the switch via a path including an inter-member connection wiring composed of a metal pattern disposed on an interlayer insulating film from the first surface of the first member to a surface of the second member, or a path crossing an interface at which the first member and the second member are joined.

A compound semiconductor substrate and a method for manufacturing the compound semiconductor substrate including the steps of forming an electronic traveling layer consisting of a first nitride semiconductor, forming a barrier layer consisting of a second nitride semiconductor with a wider band gap than a band gap of the first nitride semiconductor on the electronic traveling layer, and forming a cap layer with an organometallic vapor phase epitaxy on the barrier layer and in contact with the barrier layer. The cap layer has a C concentration of 5*1017 atoms / cm3 or more and 1*1020 atoms / cm3 or less, and consists of a nitride semiconductor. During the step forming the cap layer, source gas of the nitride semiconductor forming the cap layer and hydrocarbon gas are introduced to a top surface of the barrier layer.