670 results about "Compound semiconductor" patented technology

The invention relates to an LED display device based on vertical stacking and a preparation method thereof, the display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one is a non-common-pole contact; the electric connectors comprise common-pole conductive parts and non-common-pole conductive parts, the non-common-pole conductive parts are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive parts are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises an interconnection conductive part, the interconnection conductive parts are located in the corresponding pixel layers, at least one interconnection conductive part comprises a core body, the core body is a compound semiconductor, and the core body is located in the first inner fence. The invention further discloses a preparation method. The production efficiency and quality of the LED display device can be improved.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof. The display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one of the first type of electrode contact and the second type of electrode contact on the driving backboard is a non-common-pole contact; the non-common-pole conductive pieces are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive pieces are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises at least one interconnection conductive part, a compound semiconductor region is arranged in the pixel layer where the interconnection conductive part is located, a backfill hole is formed in the compound semiconductor region, and the backfill hole is filled with the interconnection conductive part. The invention further discloses a preparation method. The stability and reliability of the LED display device can be improved, and the LED display device is more convenient to process.

The present invention relates to gas detection devices, and in particular to volatile substance sensors, such as respiratory alcohol device sensors. A semiconductor gas sensor device according to the present invention includes a laser structure and an optical waveguide resonator formed in the same compound semiconductor including at least one light emission layer and one light propagation layer. The optical waveguide resonator is formed in the light propagating layer, and a majority thereof is separated from a remainder of the light propagating layer. The laser structure is disposed adjacent a portion of the optical waveguide resonator and is arranged to transmit electromagnetic radiation of a particular wavelength band to the optical waveguide resonator arranged to resonate at the particular wavelength band.

The invention discloses a semiconductor structure and a preparation method thereof. The preparation method of the semiconductor structure comprises the following steps: providing a first substrate; forming a compound semiconductor layer on the first substrate; forming an active layer on the compound semiconductor layer; bonding a second substrate on the surface of the active layer; an etching process is adopted to remove the compound semiconductor layer and the first substrate so as to expose the active layer, and the etching selection ratio of the active layer to the compound semiconductor layer is larger than that of the active layer to the first substrate; and forming a metal wiring layer on the surface of the active layer. According to the semiconductor structure preparation method, the stress damage to the wafer in the wafer thinning process can be reduced, so that the product yield can be improved.

A power module includes: a lead frame having a base region and leads; a plurality of substrates each having a first metallized side attached to the base region of the lead frame, a second metallized side opposite the first metallized side, and an insulating body that electrically isolates the first and second metallized sides from one another; at least one semiconductor die attached to the second metallized side of each substrate; and a mold compound encapsulating the semiconductor dies and part of the lead frame. The semiconductor dies are electrically interconnected within the power module to form part of a power electronics circuit. The base region of the lead frame is electrically isolated from the power electronics circuit by the insulating body of the substrates. The leads of the lead frame protrude from one or more side faces of the mold compound and form terminals of the power module.

The invention relates to an LED display device and a preparation method, the LED display device comprises a substrate and a pixel layer, the pixel layer comprises pixel units, the periphery of each pixel unit is at least surrounded by an annular partition groove, each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit, and the outermost annular partition groove of each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit. A compound semiconductor is reserved in the non-overlapping area, or a compound semiconductor is reserved between each pixel unit and the outermost annular partition groove of the adjacent pixel unit, so that the pixel units and the adjacent pixel units are completely separated from each other; the top of each pixel unit is electrically connected with the corresponding second-type electrode contact, the bottom of each pixel unit is electrically connected with the corresponding first-type electrode contact, and the second-type electrode contacts are formed on the periphery of the outermost annular partition groove of the corresponding pixel unit. The invention further discloses a preparation method of the LED display device. The heat dissipation capacity of the LED device can be effectively improved, the LED device can emit light stably, and the photoelectric performance and the reliability of the LED display device are guaranteed.

The invention provides a semiconductor device. The semiconductor device comprises a substrate; a compound semiconductor layer disposed on the substrate; and a source electrode and a drain electrode provided on the compound semiconductor layer. The source electrode includes a plurality of source fingers arranged parallel to each other. The drain electrode comprises a plurality of drain electrode finger parts which are arranged in parallel, wherein the source electrode finger parts and the drain electrode finger parts are arranged in a crossed mode. The semiconductor device further includes a field plate structure extending outwardly from each of the drain fingers. The field plate structure includes a first field plate and a plurality of second field plates. The first field plate directly contacts the flat side segment of each of the drain fingers. A plurality of second field plates surround a fingertip segment of each of the drain fingers.

A described example includes: a heat slug coupled to a package substrate, the heat slug configured to conduct a current between terminals of the package substrate; a first magnetic shield mounted to a top surface of the package substrate, the first magnetic shield including a die mount area; a semiconductor die flip chip mounted to the die mount area; a second magnetic shield mounted to the package substrate, the second magnetic shield having a cantilever portion extending over a portion of the semiconductor die including a Hall element; electrical connections of wire bonds or ribbon bonds between bond pads of the semiconductor die and leads on the package substrate; and mold compound covering the electrical connections, the semiconductor die, the first magnetic shield, and the second magnetic shield, while a portion of the heat slug is exposed forming a thermal pad for a semiconductor device package.

An epitaxially-grown substrate includes: a substrate made of a III-V-group compound semiconductor containing Ga or In as a III-group element; a sacrificial layer epitaxially grown on the substrate; and a semiconductor layer epitaxially grown on the sacrificial layer. The sacrificial layer includes a layer made of a mixed-crystal semiconductor containing Al or In as a III-group element, a composition ratio of Al or In varies in a thickness direction, and a location indicating a local maximum value of the composition ratio of Al or In is positioned inside other than a lower surface and an upper surface of the sacrificial layer.

[Problem] To provide a semiconductor substrate that comprises a group III-V compound semiconductor having few crystal defects above a group IV semiconductor substrate, a semiconductor device, and a method for manufacturing the semiconductor device. [Solution] The semiconductor substrate according to the present disclosure comprises a group IV semiconductor substrate, a first material layer that includes a group III-V material or a group II-VI material provided on the group IV semiconductor substrate, a first two-dimensional substance layer that is provided on the first material layer, and a second material layer that includes a group III-V material provided above the first two-dimensional substance layer.

A compound transistor comprises a first transistor structure and a second transistor structure. The first transistor structure includes a collector layer, a base layer on the collector layer, an emitter layer on a first portion of the base layer, and a base metal contact on a second portion of the base layer. The second transistor structure includes a channel layer directly on a first portion of the emitter layer and a barrier layer on the channel layer. A plurality of electrodes including a source, a gate, and a drain are formed on the barrier layer such that the source is electrically coupled to the base metal contact.

Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

There is provided an imaging device that can suppress deterioration in characteristics. An imaging device includes: a support substrate that includes a first compound semiconductor; a photoelectric conversion layer that is provided on a first surface side of the support substrate and includes a second compound semiconductor having a composition different from a composition of the first compound semiconductor; a first protective layer that is provided in a trench penetrating the support substrate and the photoelectric conversion layer and is provided on a first side surface of the photoelectric conversion layer; and a second protective layer that is provided in the trench and is provided on a second side surface of the support substrate. The first protective layer and the second protective layer have different compositions. A first interface state generated between the first side surface and the first protective layer is smaller than an interface state generated between the first side surface and the second protective layer in a case where the second protective layer is in contact with the first side surface. A second interface state generated between the second side surface and the second protective layer is smaller than an interface state generated between the second side surface and the first protective layer in a case where the first protective layer is in contact with the second side surface.

The invention relates to the field of infrared photoelectric detector research, in particular to a room-temperature uncooled infrared photoelectric detector based on an InGaAs triangular barrier structure. The semiconductor device sequentially comprises a substrate, an n-type doped III-V compound semiconductor layer, an i-type semiconductor layer, a delta-p-type doped III-V compound semiconductor layer, an i-type semiconductor layer and an n-type doped III-V compound semiconductor layer from bottom to top, wherein the n-type doped III-V compound semiconductor layer is provided with an electrode; the problems that a traditional semiconductor type photoelectric detector is large in background noise and low in sensitivity due to the fact that the traditional semiconductor type photoelectric detector is influenced by the room temperature can be solved, and infrared detection of the room temperature is achieved.

The invention relates to an LED display device and a preparation method, the LED display device comprises a substrate and a pixel layer, the pixel layer comprises pixel units, the periphery of each pixel unit is at least surrounded by an annular partition groove, each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit, and the outermost annular partition groove of each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit. The compound semiconductor is reserved in the non-overlapping region; or, a compound semiconductor is reserved between each pixel unit and the outermost annular partition groove of the adjacent pixel unit, so that the pixel units and the adjacent pixel unit are completely separated from each other; the top of each pixel unit is electrically connected with the second type of electrode contacts, the bottom of each pixel unit is electrically connected with the first type of electrode contacts, the projection area of each pixel unit on the substrate is defined as a first projection area, and the second type of electrode contacts are formed in the first projection area of the corresponding pixel unit. The invention further discloses a preparation method of the LED display device. The photoelectric performance and the reliability of the LED display device can be improved.

The invention relates to an LED display device and a preparation method thereof. The LED display device comprises a substrate, the substrate is a driving wafer, a pixel layer is a compound semiconductor layer, the pixel layer is located on the upper portion of the substrate, pixel units and interconnection conductive parts are arranged in the pixel layer, the tops of the pixel units are electrically connected with corresponding second-type electrode contacts through the interconnection conductive parts, and the second-type electrode contacts are electrically connected with the pixel units through the interconnection conductive parts. The bottoms of the pixel units are electrically connected with the corresponding first type of electrode contacts; wherein the compound semiconductor layer is provided with a second type of electrode filling hole, the second type of electrode filling hole is internally provided with an interconnection conductive piece, and the interconnection conductive piece is a metal piece. The invention further discloses a preparation method. According to the invention, the heat dissipation capability of the whole LED device is effectively improved, the preparation process is simplified, the production cost is reduced, and the production efficiency is improved.

An electro-optical modulation chip (100) capable of monolithically integrating an active optical device, and a preparation method. The electro-optical modulation chip (100) comprises, from top to bottom, a compound semiconductor active layer (103), a germanium thin film layer (104) and an electro-optical material waveguide layer (105), wherein the electro-optical material waveguide layer (105) forms corresponding waveguide structures (12) by means of photoetching and etching; the germanium thin film layer (104) forms a germanium absorption layer (104-2) and a germanium substrate growth layer (104-1) by means of photoetching and etching; and the germanium thin film layer (104) is prepared by the ion scissors technology. On the one hand, high-speed and high-responsivity O / C waveband optical detection can be achieved, and on the other hand, a growth substrate matching the lattice of a compound semiconductor is provided for the compound semiconductor, achieving simultaneous integration of an optical gain semiconductor device.

Provided are a radiation detection element, a radiation detector, and a production method for the radiation detection element that make it possible to measure the energy of radiation with favorable accuracy. A radiation detection element according to the present invention includes: a compound semiconductor crystal substrate that comprises cadmium zinc telluride to which indium has been added as an impurity; and a metal electrode that is provided on the surface of the compound semiconductor crystal substrate. The energy resolution for gamma rays of 122 keV emitted from 57Co is no more than 7%.

According to the high-stability laser provided by the invention, the multi-quantum well resonance region is arranged in the laser chip, and the structure ensures that each quantum well in the multi-quantum well resonance region is strictly positioned at the wave crest of a laser standing wave field, so that the maximum gain is formed. When the wavelength is smaller than or larger than the laser wavelength, each quantum well deviates from the wavelength of the standing wave field, and the maximum gain cannot be obtained. Therefore, the structure can effectively suppress oscillation of other wavelengths and ensure that the wavelength of the output laser is stable and unchanged. Secondly, a compound semiconductor material is adopted as a gain material, and the compound semiconductor material has very short upper energy level lifetime and the gain in parabola regular distribution, so that when the laser generates oscillation, only the mode with the maximum gain forms laser oscillation, and no intense mode competition exists, thereby ensuring that the mode of the output laser beam does not generate random jump, and improving the laser output efficiency. Therefore, the intensity of the output laser is stable.

An optoelectronic semiconductor body with a semiconductor layer sequence (2) based on a lll-V compound semiconductor material is specified, wherein: - the semiconductor layer sequence (2) comprises an n-doped layer (21) doped with a group VI dopant; - the semiconductor layer sequence (2) comprises an active region (20) configured to emit and / or absorb radiation; - the semiconductor layer sequence (2) comprises an interlayer (23) between the active region (20) and the n-doped semiconductor layer (21); and - the interlayer (23) comprises phosphorus (P) and at least one further group V material, preferably arsenic (As). An optoelectronic semiconductor chip (1) comprising the same is also specified. Finally, methods of producing the same are also specified.

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

To provide a light detection device with a plurality of avalanche photodiodes formed on a semiconductor substrate composed of compound semiconductor, improving both light detection sensitivity and light detection time resolution.SOLUTION: A light detection device comprises a first layer 10 composed of compound semiconductor, and a second layer 50 composed of silicon. The first layer 10 includes a plurality of avalanche photodiodes 20 disposed in a two-dimensional layout and operating in Geiger mode. The second layer 50 incudes a plurality of output units 30 which are overlapped on the first layer. Each output unit 30 has a quenching element 31. The quenching element 31 is serially connected to at least one of the plurality of avalanche photodiodes 20.SELECTED DRAWING: Figure 6

An optical semiconductor element includes, a substrate having a silicon layer, and a semiconductor element made of a III-V compound semiconductor and bonded to the silicon layer. The silicon layer has a waveguide, a recess, a terrace, and a connecting portion. The recess is a recessed part lower than a surface of the waveguide, a surface of the terrace, and a surface of the connecting portion and is provided between the waveguide and the terrace. The semiconductor element is bonded on the waveguide, the recess, and the connecting portion and has a first tapered portion protruding in a direction in which the waveguide extends. The connecting portion crosses the recess and is connected to the waveguide and the terrace.

The invention provides a wafer defect double-sided synchronous detection optical module and device, and relates to the technical field of semiconductor material surface defect nondestructive detection. The wafer defect double-sided synchronous detection optical module and the wafer defect double-sided synchronous detection optical module and the wafer defect double-sided synchronous detection optical module have the advantages that detection optical paths can be designed according to characteristics of third-generation compound semiconductor materials and classified statistics of common defects, various optical response mechanisms are integrated, and synchronous detection of the upper surface and the lower surface of a to-be-detected sample is realized.

To provide a combined semiconductor inspection system which simultaneously has characteristics such as high efficiency and high accuracy and can be applied to various complicated semiconductor products. The integrated semiconductor inspection system 1 includes a multi-axis sample stage 10, an optical metrology subsystem 12, an X-ray metrology subsystem 14, and a processing device 16. The optical metrology subsystem includes a light source generator 120, an input optical element group 122, a receiving optical element group 124, and an optical receiver 126. The optical receiver receives an optical test signal and generates corresponding optical spectrum information. The X-ray metrology subsystem includes an X-ray generator 140, an X-ray optical element group 142, and an X-ray detector 144. The X-ray detector receives the X-ray test signal and generates corresponding X-ray spectrum information. The processing device is configured to perform a fitting analysis process based on the optical spectrum information and the X-ray spectrum information, and obtain structural parameters of the test sample as an analysis result.

The invention discloses a compound semiconductor photoresist stripper, and a preparation method, application and cleaning method thereof. The compound semiconductor photoresist stripper comprises the following components by weight: 30-60 parts of a metal protective polar organic solvent; 30-60 parts of an aprotic polar organic solvent; 1-15 parts of a corrosion inhibitor; and 1-15 parts of an anionic surfactant. The invention not only discloses specific components and a preparation method of the compound semiconductor photoresist stripping liquid, but also discloses application of the compound semiconductor photoresist stripping liquid in effective removal of photoresist, and the compound semiconductor photoresist stripping liquid has a good protection effect on a substrate in the application. And corrosion can be effectively prevented. In addition, the two solvents are synergistically used, so that the photoresist can be more effectively removed.

Integrated circuits can include semiconductor devices with back-side field plates. The semiconductor devices can be formed on substrates that have conductive layers located within the substrates. The conductive layers can include at least one of a conducting material or a semi-conducting material that modifies an electric field produced by the semiconductor devices. The semiconductor devices can include one or more semiconductor layers that include one or more materials having a compound material that includes at least one Group 13 element and at least one Group 15 element.

The invention provides a preparation method of an N-polar gallium nitride material, which can be applied to the technical field of compound semiconductor materials. The method comprises the following steps: carrying out ion implantation on a Ga polar Si-based GaN wafer to a specified depth, bonding a GaN functional layer with a target wafer, and carrying out reinforcing annealing; stripping the GaN functional layer and the buffer layer from the Si substrate through stripping annealing; performing repair annealing on the stripped N-polarity GaN functional layer; and finally, removing the residual Si substrate and the buffer layer to obtain the N-polarity gallium nitride material on the target wafer. According to the method, mechanical polishing and chemical mechanical polishing processes are not needed, the GaN functional layer is prevented from being damaged, and therefore an alternative preparation scheme of the N-polarity gallium nitride material is achieved.

The present invention relates to single-crystal spherical carbon nanoparticles that are single-crystals, are spherical, and have an average particle diameter of 1 nm to 30 nm. The single-crystal spherical carbon nanoparticles of the present invention can generate fluorescence with a high fluorescence quantum efficiency when excited by a light in wide wavelength range from ultraviolet light to visible light, and have fluorescence quantum efficiency of 10% or more compared to conventionally known carbon nanoparticles. The single-crystal spherical carbon nanoparticles can be used for drug delivery, because they do not have toxicities to living organisms that compound semiconductors made of cadmium, selenium, tellurium, and the like have. Furthermore, since the single-crystal spherical carbon nanoparticles are spherical, they can be densely packed as electrode materials for solar cells and secondary ion batteries, and can be used for negative electrode for lithium ion batteries or electrode material for solar cells.

A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.