The invention provides a
silicon-on-insulator and a manufacturing method thereof, and the manufacturing method of the
silicon-on-insulator comprises the steps: providing a device substrate, and forming a
buried oxide layer on the device substrate; executing multiple
ion implantation processes to form an
embrittlement layer at the target stripping depth; the
ion implantation process is a single
hydrogen ion implantation process, and the implantation energy in the multiple
ion implantation processes is sequentially increased. According to the multi-time
ion implantation technology, the technology is optimized through a step-by-step and low-dosage strategy, the precision is remarkably improved, for example,
ion implantation is conducted in three times, the total dosage is not changed, the implantation dosage is low each time, and lattice damage accumulation of single-time ion implantation is reduced. The continuity of the
buried oxide layer is improved, and the thickness deviation is controllable. The distribution of
oxygen ions can be accurately controlled by combining multiple times of ion implantation with gradient implantation energy adjustment: overlapped
oxygen concentration peaks are formed in the longitudinal direction by adjusting each time of implantation energy, and a uniform
buried oxide layer is fused after annealing.