203 results about "Strong field" patented technology

The invention discloses a method for removing heavy metal ions in sewage by nanometer hydroxylapatite, belonging to the technical field of heavy metal sewage treatment. The method comprises the following steps: adding nanometer grade hydroxylapatite powder in waste water containing heavy metal ions, wherein, the dosage of the hydroxylapatite powder is 6-8g/L; balancing the mixture for 12-48 hours at a temperature of 23-27 DEG C; and standing the mixture to remove the heavy metal ions in the waste water. The method uses the hydroxylapatite with relatively lower economic value to treat the heavy metal sewage, has high treatment efficiency, low treatment cost, strong field operability and small environment risk, and has heavy metal ion removal rate over 90 percent under conditions that concentration of Cd, Pb or Cu ions does not exceed 60mg/L.

An implantable medical device detects a strong static magnetic field associated with an MRI imaging instrument and operates in a safekeeping operating mode. The device (10) includes an electronic circuit for the detection/stimulation of a cardiac activity (16), a weak field sensor (22) detecting the presence of a first magnetic field of a permanent magnet being located in proximity to the device, a strong field sensor (20) detecting the presence of a second magnetic field of an MRI imaging instrument during the course of an MRI examination. The electronic circuit is placed in a safekeeping operating mode protected from the magnetic field of an MRI imaging instrument when the weak field sensor detects the first magnetic field and the strong field sensor detects the second magnetic field. The strong field sensor is a sensor that is selectively activated on detection of a magnetic field by the weak field sensor.

The invention provides an MES system for engine online assembly control, which is applied to engine assembly. By setting an RFID read-write device, a return control device and an interactive display device on each workstation, data of a passing engine can be read and the state of the engine on a line can be acquired, and the processing result is written into an electronic tag. In addition, a field line and OEM equipment are managed and controlled through an MES management controller, a line controller and an OEM equipment controller. Finally, data produced in the assembly process is uploaded to an MES server. Thus, dynamic monitoring of the assembly process is realized. Compared with the prior art, the MES system of the invention has strong field data acquisition ability and assembly process control ability, is of higher efficiency.

Disclosed is a control device capable of ending strong field control in a structure that performs strong field control and square wave control on the basis of a voltage index, such as a modulation factor. A voltage waveform control unit performs PWM control when a voltage index is less than a threshold, and performs square wave control when the voltage index is equal to or greater than the threshold value. A field adjusting unit performs strong field control when the voltage index is equal to or greater than a predetermined strong field threshold value less than the square wave threshold value. A mode control unit ends the strong field control when a field adjustment command value is equal to or greater than an adjustment command threshold value determined on the basis of a target torque and a voltage/speed ratio in a direction in which field flux is strengthened.

Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes. It is preferred that an energy of the emitted electrons is selected from a range of 1 eV to 50 keV, and preferably 1 eV to 100 eV.

In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

An adaptive dual mode card emulation system (in Card Emulation Mode or PICC design) within an NFC device is disclosed to solve the strong field power delivering issue and also achieve longer communication range. The NFC device may be a NFC tag or an electronic device (such as a smartphone) operated in a card emulation mode. The NFC device comprises an antenna used for wireless communication. The adaptive dual mode card emulation system comprises a passive load modulation (PLM) module, an active load modulation (ALM) module and an automatic power control (APC) module. The APC module couples to both the ALM and PLM modules and selectably enables the ALM or PLM module depending on the strength of received carrier signal sent from an NFC reader.

The invention discloses a crane with a self-dismounting over-lifting device and a dismounting method of the over-lifting device. The crane comprises a front positioning device and a rear positioning device which are respectively arranged on the front and rear of a chassis, wherein the front positioning device comprises a lifting support and an over-lifting positioning bracket arranged on the two sides of the lifting support, and the positioning bracket comprises an over-lifting positioning pin shaft; the rear positioning device comprises a supporting base and a group of supporting frames, and the supporting base is provided with a positioning hole or a guiding groove; one ends of the group of supporting frames are respectively fixedly connected with the over-lifting device, and the other ends of the group of supporting frames are provided with idler wheels; head ends of a first over-lifting arm assembly and a second over-lifting arm assembly are respectively connected with a basic arm of a lifting arm through the pin shaft. The crane and the dismounting method of the over-lifting device provided by the invention have the advantages that a device carried by the crane is utilized for rapidly finishing positioning and dismounting the basic arm of the lifting arm, the dismounting over-lifting time is greatly shortened, the inputs of manpower and material resources are reduced, meanwhile, the dismounting over-lifting required operation area is reduced, and the crane has a strong field adaptability.

The invention provides remote target locating method and system based on a dual-magnetic field sensor array plane. The system comprises an object required to be located, a magnetic sensor array, a magnetic field space analysis device and a background magnetic field compensation sensor. The invention provides the remote target locating method and system based on the dual-magnetic field sensor array plane; a target area is between two magnetic field sensor array planes; a point with the strongest field intensity in the two planes is found out, and then the remote target can be located by utilizing physical and mathematical knowledge combined with magnetic field compensation information. The method is not only suitable for an open environment, but also is suitable for a closed environment, such as a human digestive system, a liquid processing pipeline or some mechanical systems. According to the method, the defects of traditional remote locating are abandoned, and the method has the advantages that the location is accurate, the cost is low, the efficiency is high and the calculation is simple.

The invention discloses a single ZnO:Ga micron wire heterojunction base point light source device and a preparation method thereof, and belongs to the technical field of semiconductor optoelectronic devices. The device comprises a quartz base, a p-GaN substrate, and an AgNPs@ZnO:Ga composite system disposed above the p-GaN substrate, wherein the AgNPs@ZnO:Ga composite system includes a ZnO: Ga single micron wire, and an Ag nano particle layer which is controllably disposed on the surface of the ZnO: Ga single micron wire to form an Ag-coated ZnO:Ga micron wire composite structure. Sputtering or spin-coating the surface of the micron wire with chemically synthesized Ag nanoparticles can suppress the surface defects of ZnO and increase the effective injection rate of micron wire carriers. Further, the surface plasmons of Ag nanoparticles have extremely strong field limit and field enhancement characteristics, can limit the energy to a point, and regulate the carrier recombination area tothe same area to construct a low-dimensional point LED.

The present invention provides an apparatus and method for treating and improving a target object using electrons, by which it is possible to use electrons to uniformly And effectively deal with and improve the target audience. The method uses a cold-cathode electron emitter having the ability to emit electrons from a planar electron-emitting portion according to the tunneling effect, and preferably includes a pair of electrodes and a strong field drift layer comprising nanocrystalline silicon disposed between the electrodes . A target object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes. Preferably, the energy of the emitted electrons is selected from the range of 1 eV to 50 keV, preferably 1 eV to 100 eV.

The invention provides an avalanche photodiode for ultraviolet detection as well as a manufacturing method and working procedure thereof. The avalanche photodiode comprises a substrate, a buffer layer, a light adsorption layer of a wide bandgap semiconductor and at least one pair of Schottky electrodes, wherein the buffer layer and the light adsorption layer of the wide bandgap semiconductor are arranged on the substrate in sequence; and the one pair of Schottky electrodes is horizontally distributed in a back-to-back mode and directly covers on the light adsorption layer of the wide bandgap semiconductor. Aiming at the problems that the quality of wide bandgap semiconductor crystals is generally low and a dual-conductive type doping is difficult to realize, a Schottky junction with high back bias voltage is utilized to realize an ultraviolet sensitive depletion region with a strong electric field; when the electric field in the depletion region reaches a critical breakdown field of the corresponding wide bandgap semiconductor, an avalanche operation can be realized; besides, a horizontal back-to-back Schottky contact structure is adopted so that the strong field in the semiconductor depletion region can be approximately perpendicular to the epitaxial growth direction of a semiconductor thin film, thus the influence of a structural defect in the material on device performances can be reduced and the reliability of a device can be improved.

The invention discloses a high-power circulator. The high-power circulator comprises a metal cavity (1), a ferrite gyromagnet substrate (2) and a medium neck (3), wherein the metal cavity (1) comprises an upper cover and a base, grooves are formed in the upper cover and the base at mirror symmetry positions, the upper cover is mounted on the base, and a cavity is formed between the upper cover and the base; the ferrite gyromagnet substrate (2) is positioned inside the medium neck (3); the medium neck (3) is mounted in the cavity of the metal cavity (1) and is positioned between the groove of the upper cover and the groove of the base, so that the ferrite gyromagnet substrate (2) clings to the metal cavity (1). According to the method disclosed by the invention, the strongest field intensity is firstly concentrated on a gyromagnet substrate area through initial electrical performance design optimization, then multilayer concentric medium circular rings are loaded in the area to form the medium neck with dielectric constant of space variation, then electrical performance optimization and microdischarge simulating optimization are further carried out, and microdischarge electron orbit blocking is realized under the premise of meeting actual electrical performance requirement, so that the microdischarge threshold value power is effectively promoted.

Disclosed is a crescent windmill superstructure surface producing a local complex polarized light field. The substrate of the superstructure is an optical dielectric material. The superstructure surface is of a windmill nano metal structure, and is composed of multiple blades arranged at equal angles, wherein each blade is crescent. The windmill structure binds incident light energy to the superstructure surface, and produces a local strong field at the tip of each crescent blade finally. As the blades of the windmill are arranged at equal angles, incident linearly-polarized light can be converted into local complex polarization. The number of focus points, enhancement factor and local polarization state of a focus field can be regulated by changing the number of blades N and a crescent factor m. The crescent windmill superstructure surface can be used as a polarization converter or a particle manipulation waveguide, and has important application value in fields like light field polarization modulation and nano manipulation.

The invention provides a metal microcavity optical coupling terahertz quantum well photon detector, which comprises a semiconductor substrate, a metal reflective layer, a multi-quantum well structure and a metal grating, wherein the metal grating, the multi-quantum well structure and the metal reflective layer form a metal resonant microcavity with a Fabry-Perot structure, incident photons are enabled to form a resonant mode conforming to the Fabry-Perot structure in the cavity through adjusting the period of the metal grating, the width of a metal strip and the thickness of the multi-quantum well structure, and a strong field region is formed in the metal resonant microcavity, thereby improving the effective strength of incident light, and improving the response rate, the detection sensitivity and the working temperature of the device. The metal microcavity optical coupling terahertz quantum well photo detector has the advantages of simple structure, obvious effect, strong practicability, and is applicable to industrial production.

This invention relates to one biological optical technique, which brings fluorescence label special antibody and test object mass in reverse vibration plane light wave guide lighting by laser through analysis fluorescence signals to judge whether there is antigen. This invention advantages are as: a, with more strong field inside wave guide field than outer one to trigger fluorescence intensity by more than ten times; b, avoiding couple consumption; c, connecting tens of thin tanks to realize rapid multi-channel test.