161results about "Cold cathodes" patented technology

A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators. In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.

Integrated circuits, including field emission devices, have a resistor element of amorphous SixC1-x wherein 0<x<1, and wherein the SixC1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.

A tubular or spherical nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino acid.

A field emission cathode device consisting of an electrically conducting material and with a narrow, rod-shaped geometry or a knife edge, to achieve a high amplification of the electric field strength is characterized in that the electron-emitting part of the field emission cathode at least partly has preferred cylindrical host molecules and / or compounds with host compounds and / or cylindrical atomic networks, possibly with end caps with diameters measuring in the nanometer range.

A flat panel display includes an electron emitter plate provided with electron emitters, a phosphor plate provided with phosphors and a space defined by the electron emitter plate and the phosphor plate for form a substantial vacuum atmosphere therebetween, wherein a great number of fine recess structures are formed on the surface of a metal film formed on the electron emitter plate, and fine fibered substances or carbon nanotubes or substances containing the fine fibered substances or carbon nanotubes are arranged on the fine recess structures to form electron emitters.

New, hybrid vacuum electronic devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

A tubular or spherical nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino acid.

A double-sided light-emitting field emission device and method of manufacturing same, said device comprising at least two transparent conductive layers, mixed field emission layers, and transparent package device. Wherein, the mixed field emission layer of field emission source and phosphor are utilized directly to serve as anode and cathode alternatively, such that on applying an AC power supply, roles of anode and cathode are changed alternatively along with frequency, hereby forming double-sided light-emitting structure. Therefore, the applications of said double-sided light-emitting field emission device are pretty wide, and having advantages of protecting field emission source, activating field emission source, reducing field emission arcing effect, having conductive phosphor, and raising illumination.

High voltage high current regulator circuit for regulating current is interposed between first and second terminals connected to an external circuit and comprises at least one main-current carrying cold-cathode field emission electron tube conducting current between the first and second terminals. First and second grid-control cold-cathode field emission electron tubes provide control signals for first and second grids of the at least one main-current carrying cold-cathode field emission electron tube for positive and negative excursions of voltage on the first and second terminals, respectively. The current regulator circuit may be accompanied by a voltage-clamping circuit that includes at least one cold-cathode field emission electron tube. At least two cold-cathode field emission electron tubes, configured to operate at high voltage and high current, are preferably contained within a single vacuum enclosure and are interconnected to provide a circuit function, so as to form a high voltage high current vacuum integrated circuit.

To greatly increase the storage density of a storage apparatus, an electron beam E emitted from a cold cathode 101 is accelerated by an accelerating electrode 102, caused to converge by a convergence electrode 103, deflected by a deflection electrode 104 and applied to a minute region of a storage film 105. The storage film 105 includes, for example, a phase change film 105a. The film is rapidly heated and cooled to change into an amorphous state upon irradiation with an electron beam E with high energy, while being gradually cooled to change into a crystallized state upon irradiation with an electron beam E with approximately intermediate energy, thereby storing data. Upon irradiation with an electron beam E with low energy, the potential difference between a detection electrode 105b and an anode 105c is detected depending on the state, i.e., the amorphous or crystallized state, thereby reading stored data.

A tubular or spherical nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino acid.

An image display apparatus including a rear plate and a face plate disposed opposite to each other, the rear plate being equipped with a plurality of electron-emitting devices, each provided with a pair of electrodes and an electroconductive film including an electron-emitting region disposed between the electrodes, the face plate being equipped with a phosphor for displaying an image and a film exposed on a surface of the phosphor, the film comprising a metal or a metal compound material. A film comprising the same metal or the same metal compound material as the metal or the metal compound material constituting the film exposed on the surface of the phosphor is formed on each of the electroconductive films of the plurality of electron-emitting devices to have a thickness in a range from 0.2 nm to 4.5 nm.

This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

The invention provides a nano vacuum triode with a planar emitting cathode and a manufacturing method of the nano vacuum triode with the planar emitting cathode. The method comprises the steps that a substrate, a back electrode, the planar cold cathode, a first insulation layer, a grid layer, a second insulation layer, a small cylindrical hole, a grid layer step and an anode layer are included; the back electrode is manufactured on the back face of the substrate; the planar cold cathode is manufactured on the front face of the substrate; the first insulation layer is manufactured on the planer cold cathode; the grid layer is manufactured on the first insulation layer; the second insulation layer is manufactured on the indium tin oxide thin film grid layer; the small cylindrical hole penetrates through the first insulation layer, the grid layer and the second insulation layer; the grid layer step is formed by etching the second insulation layer to the grid layer; the anode layer is manufactured on the second insulation layer; the total thickness of the first insulation layer, the indium tin oxide thin film grid layer and the second insulation layer ranges from 10 nanometers to 100 manometers. The defect that the electron emitting density of a tip structure is uneven, and a tip is prone to being damaged is overcome, and meanwhile the defect that the planar cathode needs higher threshold electric field intensity is overcome through the negative electron affinity characteristic of aluminum nitride materials.

Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium. Use of a high amplification factor film as a phosphor biasing electrode, and variability of the phosphor biasing potential to achieve brightness or gray scale control are further described in the disclosure.

An electric field emitting source is equipped with an electron emitting film which comprises a nano-sized electron emitting substance and has a first surface and a second surface constituting the surface opposite thereto, and a cathode which secures one end of the electron emitting film and comprises a first block and a second block respectively corresponding to the first surface and the second surface of the electron emitting film.

New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium. Use of a high amplification factor film as a phosphor biasing electrode, and variability of the phosphor biasing potential to achieve brightness or gray scale control are further described in the disclosure.

The present invention relates to an arrangement for emitting light comprising: a hermetically sealed caving (4) including a transparent or translucent window (10); a layer (3) of a fluorescent substance arranged within said casing covering at least a major part of said window; an electron emitting cathode (1) arranged within said casing for emission of electrons; and an anode (2). Said caving is filled with a has suitable for electron avalanche amplification. Said cathode and anode are, during use, held at electric potentials such that said emitted electrons are accelerated and avalanche amplified in said gas: and said layer is arranged to emit light through raid window in response to being bombarded by avalanche amplified electrons and / or in response to being exposed to ultraviolet light as being emitted in the gas due w interactions between the avalanche amplified electrons and the gas.

The pulse mode electron generator of the invention includes a field emission cathode with electron-emitting micropoints associated with a grid biased by means for positively biasing the grid and an anode attracting electrons emitted by the cathode. The grid is biased by a permanent positive pre-bias voltage generator delivering a rest voltage which is slightly lower than the emission threshold voltage of the cathode and in series with a positive pulse voltage generator delivering a pulse component of sufficient value to exceed the emission threshold voltage of the cathode. This facilitates the pulse mode production of electrons and reduces the power consumption needed to produce the electrons.

The present invention provides an apparatus and method for treating and improving a target object using electrons, by which it is possible to use electrons to uniformly And effectively deal with and improve the target audience. The method uses a cold-cathode electron emitter having the ability to emit electrons from a planar electron-emitting portion according to the tunneling effect, and preferably includes a pair of electrodes and a strong field drift layer comprising nanocrystalline silicon disposed between the electrodes . A target object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes. Preferably, the energy of the emitted electrons is selected from the range of 1 eV to 50 keV, preferably 1 eV to 100 eV.

Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

Integrated circuits, including field emission devices, have a resistor element of amorphous SixC1-x wherein 0<x<1, and wherein the SixC1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.

An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

An emitter has a dielectric layer formed on a conductor, with a thin metal layer over the dielectric. A plurality of conducting centers is in the dielectric layer to allow electrons to pass through the dielectric from the conductor to the thin metal layer via quantum tunneling.

A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer, and an anode plate (50) spaced from the electron emitters. Each electron emitter includes a nano-rod first part (401) and a conical second part (402). The buffer and the nano-rods are made from silicon carbide (SiCX). The combined buffer and nano-rods has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest-the anode plate. The conical parts are made from molybdenum. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the electron emitters traverse the interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.