159results about "Cold cathodes" patented technology

Integrated circuits, including field emission devices, have a resistor element of amorphous SixC1-x wherein 0<x<1, and wherein the SixC1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.

A tubular or spherical nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino acid.

A double-sided light-emitting field emission device and method of manufacturing same, said device comprising at least two transparent conductive layers, mixed field emission layers, and transparent package device. Wherein, the mixed field emission layer of field emission source and phosphor are utilized directly to serve as anode and cathode alternatively, such that on applying an AC power supply, roles of anode and cathode are changed alternatively along with frequency, hereby forming double-sided light-emitting structure. Therefore, the applications of said double-sided light-emitting field emission device are pretty wide, and having advantages of protecting field emission source, activating field emission source, reducing field emission arcing effect, having conductive phosphor, and raising illumination.

High voltage high current regulator circuit for regulating current is interposed between first and second terminals connected to an external circuit and comprises at least one main-current carrying cold-cathode field emission electron tube conducting current between the first and second terminals. First and second grid-control cold-cathode field emission electron tubes provide control signals for first and second grids of the at least one main-current carrying cold-cathode field emission electron tube for positive and negative excursions of voltage on the first and second terminals, respectively. The current regulator circuit may be accompanied by a voltage-clamping circuit that includes at least one cold-cathode field emission electron tube. At least two cold-cathode field emission electron tubes, configured to operate at high voltage and high current, are preferably contained within a single vacuum enclosure and are interconnected to provide a circuit function, so as to form a high voltage high current vacuum integrated circuit.

To greatly increase the storage density of a storage apparatus, an electron beam E emitted from a cold cathode 101 is accelerated by an accelerating electrode 102, caused to converge by a convergence electrode 103, deflected by a deflection electrode 104 and applied to a minute region of a storage film 105. The storage film 105 includes, for example, a phase change film 105a. The film is rapidly heated and cooled to change into an amorphous state upon irradiation with an electron beam E with high energy, while being gradually cooled to change into a crystallized state upon irradiation with an electron beam E with approximately intermediate energy, thereby storing data. Upon irradiation with an electron beam E with low energy, the potential difference between a detection electrode 105b and an anode 105c is detected depending on the state, i.e., the amorphous or crystallized state, thereby reading stored data.

This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (˜1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (˜100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

The invention provides a nano vacuum triode with a planar emitting cathode and a manufacturing method of the nano vacuum triode with the planar emitting cathode. The method comprises the steps that a substrate, a back electrode, the planar cold cathode, a first insulation layer, a grid layer, a second insulation layer, a small cylindrical hole, a grid layer step and an anode layer are included; the back electrode is manufactured on the back face of the substrate; the planar cold cathode is manufactured on the front face of the substrate; the first insulation layer is manufactured on the planer cold cathode; the grid layer is manufactured on the first insulation layer; the second insulation layer is manufactured on the indium tin oxide thin film grid layer; the small cylindrical hole penetrates through the first insulation layer, the grid layer and the second insulation layer; the grid layer step is formed by etching the second insulation layer to the grid layer; the anode layer is manufactured on the second insulation layer; the total thickness of the first insulation layer, the indium tin oxide thin film grid layer and the second insulation layer ranges from 10 nanometers to 100 manometers. The defect that the electron emitting density of a tip structure is uneven, and a tip is prone to being damaged is overcome, and meanwhile the defect that the planar cathode needs higher threshold electric field intensity is overcome through the negative electron affinity characteristic of aluminum nitride materials.

Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium. Use of a high amplification factor film as a phosphor biasing electrode, and variability of the phosphor biasing potential to achieve brightness or gray scale control are further described in the disclosure.

The present invention relates to an arrangement for emitting light comprising: a hermetically sealed caving (4) including a transparent or translucent window (10); a layer (3) of a fluorescent substance arranged within said casing covering at least a major part of said window; an electron emitting cathode (1) arranged within said casing for emission of electrons; and an anode (2). Said caving is filled with a has suitable for electron avalanche amplification. Said cathode and anode are, during use, held at electric potentials such that said emitted electrons are accelerated and avalanche amplified in said gas: and said layer is arranged to emit light through raid window in response to being bombarded by avalanche amplified electrons and/or in response to being exposed to ultraviolet light as being emitted in the gas due w interactions between the avalanche amplified electrons and the gas.

The pulse mode electron generator of the invention includes a field emission cathode with electron-emitting micropoints associated with a grid biased by means for positively biasing the grid and an anode attracting electrons emitted by the cathode. The grid is biased by a permanent positive pre-bias voltage generator delivering a rest voltage which is slightly lower than the emission threshold voltage of the cathode and in series with a positive pulse voltage generator delivering a pulse component of sufficient value to exceed the emission threshold voltage of the cathode. This facilitates the pulse mode production of electrons and reduces the power consumption needed to produce the electrons.

The present invention provides an apparatus and method for treating and improving a target object using electrons, by which it is possible to use electrons to uniformly And effectively deal with and improve the target audience. The method uses a cold-cathode electron emitter having the ability to emit electrons from a planar electron-emitting portion according to the tunneling effect, and preferably includes a pair of electrodes and a strong field drift layer comprising nanocrystalline silicon disposed between the electrodes . A target object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes. Preferably, the energy of the emitted electrons is selected from the range of 1 eV to 50 keV, preferably 1 eV to 100 eV.

Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

An emitter has a dielectric layer formed on a conductor, with a thin metal layer over the dielectric. A plurality of conducting centers is in the dielectric layer to allow electrons to pass through the dielectric from the conductor to the thin metal layer via quantum tunneling.