2results about How to "Large resistance" patented technology

The application provides a data reading circuit of an MRAM chip, comprising: a to-be-tested storage unit, a first gating transistor connected in series with the to-be-tested storage unit, a reference unit, a second gating transistor connected in series with the reference unit, and a readout amplifier, wherein the reference unit has three optional reference resistance branches, including a working mode branch, a first test mode branch and a second test mode branch, the working mode branch is used for reading data of the to-be-tested storage unit, the first test mode branch is used for screening out fixed failure units and high-resistance state out-of-range failure units with an open-circuit failure type, and the second test mode branch is used for screening out fixed failure units and low-resistance state out-of-range failure units with a short-circuit failure type.

This utility model belongs to the field of power battery safety technology, and discloses a power battery terminal and cell with a fusible protection structure. The terminal includes a terminal body, which comprises a substrate layer and a fusible layer stacked on top of each other. The fusible layer has a hollowed-out fusible area, within which at least one cavity is formed. A high-resistivity material layer is deposited on the inner wall of the cavity. The hollowed-out fusible area of ​​the terminal body of this utility model has a cavity, and the high-resistivity material is deposited on the cavity surface. This reduces the current-carrying area of ​​the terminal and increases the terminal resistance, allowing heat to accumulate rapidly at the terminal to the material's melting point during a short circuit, quickly melting and blocking the current, thus reducing the risk of thermal runaway of the cell.