250results about How to "Wide bandgap" patented technology

To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved.

A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.

The invention discloses lithium-enriched anti-perovskite sulfides and a solid electrolyte material. The general formula of the lithium-enriched anti-perovskite sulfides is (LimMn)3-xS1-y(XaYb)1-z, wherein m is more than 0 and less than or equal to 1, n is more than or equal to 0 and less than to 0.5, (m+n) is less than or equal to 1, a is more than 0 and less than or equal to 1, b is more than or equal to 0 and less than 1, (a+b) is less than or equal to 1, x is more than or equal to 0 and less than or equal to 0.5, y is more than or equal to 0 and less than or equal to 0.5, z is more than or equal to 0 and less than or equal to 0.5 and x=2y+z; M is H, Na, K, Rb, Mg, Ca, Sr, Ba, Y, La, Ti, Zr, Zn, B, Al, Ga, In, C, Si, Ge, P, S or Se; and X is Fe, Cl, Br or I, and Y is a negative ion. The solid electrolyte material has high ion conductivity and thermal stability and a wide working temperature range, and can be applied to lithium ion batteries, rechargeable metal lithium batteries, lithium liquid flow batteries or lithium ion capacitors.

PbI₂ thin film crystallization control is prerequisite of high-quality perovskite layer for the sequentially solution-processed perovskite solar cells. According to the present invention, an efficient-and-simple method has been developed by adding halogen acid additive to improve perovskite thin-film quality and an efficiency of at least 15.2% is obtained. This approach improves coverage, uniformity and stability of pervoskite thin-film. In addition, a nanofiber scaffold is incorporated into the perovskite layer so as to reduce the amount of grain boundaries, thus substaintially reducing electron recombination within these boundaries.

An n-channel transistor or a p-channel transistor provided with a second gate electrode for controlling a threshold voltage in addition to a normal gate electrode is used for a complementary logic circuit. In addition, an insulated gate field-effect transistor with an extremely low off-state current is used as a switching element to control the potential of the second gate electrode. A channel formation region of the transistor which functions as a switching element includes a semiconductor material whose band gap is wider than that of a silicon semiconductor and whose intrinsic carrier density is lower than that of silicon.

At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer with a barrier semiconductor layer on it. The barrier layer has a wider bandgap than the high resistivity layer and a 2DEG forms between the layers. Source and drain contacts contact the barrier layer, with part of the surface of the barrier layer uncovered by the contacts. An insulating layer is included on the uncovered surface of the barrier layer and a gate contact is included on the insulating layer. The insulating layer forms a barrier to gate leakage current and also helps to increase the HEMT's maximum current drive. The invention also includes methods for fabricating HEMTs according to the present invention. In one method, the HEMT and its insulating layer are fabricated using metal-organic chemical vapor deposition (MOCVD). In another method the insulating layer is sputtered onto the top surface of the HEMT in a sputtering chamber.

To provide a highly reliable liquid crystal display device including flexible substrates and a crystalline oxide semiconductor film for a backplane. The device includes a flexible first substrate, a flexible second substrate facing the first substrate, and a liquid crystal layer sealed between the substrates with a sealing member. The first substrate is provided with a layer including a transistor, an organic resin film over the transistor, a pixel electrode and a common electrode over the organic resin film, which partly overlap with each other with an insulating film provided therebetween, and an alignment film thereover. The transistor includes a crystalline oxide semiconductor film as a semiconductor layer where a channel is formed. Drying treatment is performed on the layer before the liquid crystal layer is sealed between the substrates, and steps from the drying treatment to sealing of the liquid crystal layer are performed without exposure to the air.

Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.

A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of Al_XGa_1−XN (0≦X≦1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.

The present invention provides a novel nitrogen-containing heterocyclic derivative and an organic electronic device using the same. The organic electronic device according to the present invention has excellent properties in terms of efficiency, driving voltage, and a life span.

The invention discloses a loaded multifunctional catalysis composite material, a preparation method thereof and an application of the composite material to catalytic removal of water pollutants. The preparation method includes the steps: preparing a zinc oxide nano-sheet loaded nickel foam (Ni@ZnO) composite material by an electro-deposition method; compounding molybdenum disulfide micro-nano particles on ZnO porous nano-sheets by an electro-deposition method to obtain Ni@ZnO/MoS₂. The composite material Ni@ZnO/MoS₂ combines the advantages of components such as nickel foam, the zinc oxide nano-sheets and molybdenum disulfide from the point of material performances, high catalytic degradation activity and recycled performances are achieved, photo-catalysis and electro-catalysis are combined from the point of material application, and the catalytic activity of the composite material is improved by the aid of synergistic effects of photo-catalysis and electro-catalysis.

A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide conductor containing hydrogen and oxygen vacancy, and a barrier layer which prevents diffusion of hydrogen and oxygen between an oxide conductive layer and the oxide semiconductor layer. The oxide conductive layer and the oxide semiconductor layer are electrically connected to each other through the barrier layer.

In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped.

The invention discloses a bipolar phosphorescent main material containing anthracene derivatives of tetraphenyl silicane and carbazole and an organic electroluminescent device. The organic electroluminescent device has a layered doped structure, wherein a luminescent layer is made from bipolar phosphorescent main material doped series Ir (III) luminescent material which contains the anthracene derivatives of tetraphenyl silicane and carbazole. The series main material has relatively wide band gap, relatively high glass transition temperature (Tg) and excellent bipolarity of hole/electron transmission capability, is applied to the main material of green organic phosphorescent luminophor and also has the potential of red light and blue light application. The phosphorescent main material has the biggest characteristic of bipolar hole and electron transmission property and can be widely applied to the red, green and blue (RGB) base color doped phosphorescent main material. The manufacturing process is simple and the invention provides an excellent material for full-color display and illumination application.