Bipolar phosphorescent main material containing anthracene derivatives of tetraphenyl silicane and carbazole and organic electroluminescent device

A technology of anthracene derivatives and tetraphenylsilicon, which is applied in the field of organic electroluminescent phosphorescent host materials and light-emitting devices, can solve problems such as low glass transition temperature, unsuitable HOMO/LUMO, and unachievable low triplet energy. The effect of high-quality materials and simple manufacturing process

Active Publication Date: 2011-04-27
陕西蒲城海泰新材料产业有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned host materials still have certain defects, such as inappropriate HOMO / LUMO, low glass transition temperature (Tg) or low triplet energy, which cannot realize higher performance blue light devices, etc.

Method used

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  • Bipolar phosphorescent main material containing anthracene derivatives of tetraphenyl silicane and carbazole and organic electroluminescent device
  • Bipolar phosphorescent main material containing anthracene derivatives of tetraphenyl silicane and carbazole and organic electroluminescent device
  • Bipolar phosphorescent main material containing anthracene derivatives of tetraphenyl silicane and carbazole and organic electroluminescent device

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Embodiment 1

[0041] The present invention selects compound 1 (or compound 2, compound 3, compound 4) as the substrate of the light-emitting layer, and tris(2-phenylpyridine) iridium [abbreviated as Ir(ppy) 3 ] as phosphorescent doped materials, using a heating co-evaporation process for high-performance electrophosphorescent devices. The substrate 1 is made of glass or transparent plastic, and the transparent conductive film 2 is a 20Ω / sqITO (indium tin oxide) film as the anode. After the substrate is cleaned, the high-purity O 2 Plasma (plasma bombardment) treatment under the atmosphere for 10 minutes, and then in high vacuum (3 ~ 2 × 10 -4 pa), deposit a hole injection layer 3 with a thickness of 45nm on the transparent conductive film 2, select TCTA (4,4', 4''-tricarbazolyl triphenylamine; then deposit holes on the hole injection layer 3 The hole transport layer 4 is selected from NPB [N, N'-bis(1-naphthyl)-N, N'-diphenylbenzidinediamine] with a thickness of 25nm; and then the light-em...

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Abstract

The invention discloses a bipolar phosphorescent main material containing anthracene derivatives of tetraphenyl silicane and carbazole and an organic electroluminescent device. The organic electroluminescent device has a layered doped structure, wherein a luminescent layer is made from bipolar phosphorescent main material doped series Ir (III) luminescent material which contains the anthracene derivatives of tetraphenyl silicane and carbazole. The series main material has relatively wide band gap, relatively high glass transition temperature (Tg) and excellent bipolarity of hole/electron transmission capability, is applied to the main material of green organic phosphorescent luminophor and also has the potential of red light and blue light application. The phosphorescent main material has the biggest characteristic of bipolar hole and electron transmission property and can be widely applied to the red, green and blue (RGB) base color doped phosphorescent main material. The manufacturing process is simple and the invention provides an excellent material for full-color display and illumination application.

Description

technical field [0001] The invention belongs to the field of organic electroluminescent phosphorescent host materials and light-emitting devices, and in particular relates to phosphorescent host materials of anthracene derivatives containing tetraphenylsilicon and carbazole, and organic electroluminescent devices of the series of host materials. Background technique [0002] Phosphorescent organic light-emitting diodes (OLEDs) have attracted great attention in the industry because of their ability to utilize triplet and singlet excitons, and their internal quantum efficiency can theoretically reach 100%. In order to obtain higher electrophosphorescence efficiency, heavy metal phosphorescent materials are usually doped into host materials to reduce concentration quenching and triplet-triplet annihilation. The host material provides a hole and electron recombination center to generate an electronic excited state, and then transfers the energy of the excited state of the host t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06C07F7/10H01L51/54H01L51/50
Inventor 张玉祥高昌轩薛震孙军张宏科高仁孝刘骞峰
Owner 陕西蒲城海泰新材料产业有限责任公司
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