The invention discloses and proposes a high-efficiency quantum dot light emitting diode with a self-assembly polymer hole transmission layer structure. Except a positive electrode and a negative electrode, the high-efficiency quantum dot light emitting diode comprises a three-layer structure: a hole transmission layer, a quantum dot light emitting layer and an electron transmission layer, wherein one end of the quantum dot light emitting layer is connected with the hole transmission layer, the other end of the quantum dot light emitting layer is connected with the electron transmission layer, the electron transmission layer is organic nanoparticles after doped, the hole transmission layer is formed by doping a monomer, a polymer, small-molecule, inorganic oxidized metal nanoparticles or a two-dimensional nanometer material into poly(3,4- ethylenedioxythiophene monomer), a quantum dot is quantum dots of zinc sulfide, zinc selenide, cadmium sulfide, cadmium selenide, cadmium telluride, mercury sulfide, mercury selenide, mercury telluride or core-shell nanometer structured cadmium selenide-zinc sulfide, cadmium sulfide-zinc sulfide, cadmium sulfide-zinc selenide and graphene thereof and the like, and the negative electrode is glass or polyethylene terephthalate (PET) with a layer of indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) or graphene.