Perovskite thin-film photovoltaic cell and manufacturing method thereof

A thin-film photovoltaic cell, perovskite technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of acid and alkali resistance of the ZnO electron transport layer, long-term stability of the battery, and electron-hole recombination. Conducive to the promotion of technology, reducing production costs, and the effect of simple production processes

Active Publication Date: 2014-06-18
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although it can be made on a flexible substrate, the ZnO electron transport layer is not resistant to acid and alkali. If it is actually used in industrial production, there will be problems with the long-term stability of the battery, and sometimes it may even react with perovskite.
All currently reported perovskite batteries require an electron transport layer. If there is no electron transport layer, the battery is basically inefficient, and the electron-hole recombination is very serious, resulting in very low efficiency.

Method used

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  • Perovskite thin-film photovoltaic cell and manufacturing method thereof
  • Perovskite thin-film photovoltaic cell and manufacturing method thereof
  • Perovskite thin-film photovoltaic cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1) Wash. In the test, the FTO conductive glass substrate should be cleaned and dried first. First, cut the conductive glass to the required size with a glass knife, clean it with a detergent, and then rinse it with deionized water. Then place it in an ultrasonic cleaner to clean it with acetone, ethanol, and ionized water in sequence, and finally dry it with nitrogen to obtain a substrate with a clean surface required for the experiment.

[0033] 2) Perovskite solution configuration. CH 3 NH 3I and PbCl 2 Dissolve in dimethylformamide at a molar ratio of 3:1, stir at room temperature for 24 hours and set aside;

[0034] 3) Preparation of perovskite light-absorbing layer. Spin-coat a layer of 2 micron thick CH on the FTO with controlled spinner speed 3 NH 3 PB 3-x Cl x The perovskite light-absorbing layer was then annealed at 100 degrees Celsius for forty-five minutes.

[0035] 4) Preparation of hole transport layer. On the thin film covered with perovskite l...

Embodiment 2

[0039] 1) Wash. With embodiment 1.

[0040] 2) Perovskite solution configuration. With embodiment 1.

[0041] 3) Preparation of perovskite light-absorbing layer. Spin-coat a layer of perovskite light-absorbing layer with a thickness of 1.5 μm on the FTO with a spinner, and then anneal at 100 °C for forty-five minutes.

[0042] 4) Preparation of hole transport layer. With embodiment 1.

[0043] 5) Electrode preparation. With embodiment 1.

[0044] 6) Test. At AM1.5, the effective area of ​​the active layer is 0.09 cm 2 The battery is tested under the conditions. The obtained photoelectric conversion efficiency parameters are, open circuit voltage 0.99 V, short circuit current density 21.33 mA / cm 2 , fill factor 0.55, conversion efficiency 11.55%.

Embodiment 3

[0046] 1) Wash. With embodiment 1.

[0047] 2) Perovskite solution configuration. With embodiment 1.

[0048] 3) Preparation of perovskite light-absorbing layer. A perovskite light-absorbing layer with a thickness of 1 μm was spin-coated on the FTO with a spinner, and then annealed at 100 °C for forty-five minutes.

[0049] 4) Preparation of hole transport layer. With embodiment 1.

[0050] 5) Electrode preparation. With embodiment 1.

[0051] 6) Test. At AM1.5, the effective area of ​​the active layer is 0.09 cm 2 The battery is tested under the conditions. The obtained photoelectric conversion efficiency parameters are, open circuit voltage 1.04 V, short circuit current density 21.35 mA / cm 2 , fill factor 0.61, conversion efficiency 13.44%.

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Abstract

The invention relates to a perovskite thin-film photovoltaic cell and a manufacturing method of the perovskite thin-film photovoltaic cell. The perovskite thin-film photovoltaic cell is composed of a conducting transparent substrate, a perovskite light-absorbing layer, a hole transfer layer and a metal electrode. The perovskite thin-film photovoltaic cell has the advantages that the structure is quite simple, a traditional electron transfer layer which needs high-temperature sintering is omitted due to the fact that a perovskite material serves as the light-absorbing layer and achieves the electron transfer function, and a porous layer is not needed either; the perovskite material is high in light-absorbing performance, the whole cell is manufactured at a low temperature, the complicated processes such as high-temperature sintering are not needed, and therefore the manufacturing cost of the cell is effectively reduced; the great promotion function is achieved on the flexibility of the cell and the large-sized reel-to-reel printing manufacturing of the cell; the whole manufacturing technology of the cell is simple, the popularization of the technology is facilitated, high photoelectric converting efficiency (approximate to 14 percent) and good device stability are obtained particularly, and therefore the industrial application prospect is achieved.

Description

technical field [0001] The invention relates to a thin-film photovoltaic cell of a light-absorbing material with a perovskite structure and a preparation method thereof, belonging to the field of optoelectronic materials and devices. Background technique [0002] With the depletion of traditional fossil fuels and increasingly serious environmental problems, the demand for clean energy is becoming more and more urgent. Solar energy has great application value as a clean energy, and the development of a solar cell with high photoelectric conversion efficiency, simple process, low cost and high stability has great strategic significance. From traditional silicon solar cells to the third-generation solar cells represented by dye-sensitive solar cells and organic cells, rapid development has been achieved and some applications have also been obtained. Traditional silicon batteries are relatively expensive, and dye-sensitized batteries have many limitations in preparation technol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549H10K71/12H10K85/341H10K30/81Y02P70/50
Inventor 方国家柯维俊王静雷红伟陶洪刘琴
Owner WUHAN UNIV
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