1018results about How to "Improve photoelectric conversion efficiency" patented technology

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, and a photovoltaic module, so as to avoid the electric leakage condition of doped regions with different doping types, thereby improving the photoelectric conversion efficiency. The solar cell comprises a substrate which comprises a front surface and a back surface which are oppositely arranged; the back surface of the substrate comprises a first doped region and a second doped region which are sequentially arranged at an interval, and an insulating region arranged between the first doped region and the second doped region; the doped polycrystalline silicon passivation contact structure is arranged in the first doped region, the doped amorphous silicon structure is arranged in the second doped region, and the passivation layer is arranged in the insulating region; the doped polycrystalline silicon passivation contact structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are sequentially laminated on the back surface of the substrate; the doped amorphous silicon structure comprises a doped amorphous silicon layer, and the doped polycrystalline silicon layer and the doped amorphous silicon layer are different in doping type; wherein the passivation layer is not overlapped with the doped polycrystalline silicon passivation contact structure and the doped amorphous silicon structure respectively along the thickness direction of the substrate.

The invention relates to the field of solar cells, and discloses a buried interface modified trans-perovskite solar cell and a preparation method thereof. The trans-perovskite solar cell structurally comprises a substrate, a conductive layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a metal counter electrode which are sequentially layered, the hole transport layer adopts a hole transport material [4-(3, 6-dimethyl-9H-carbazole-9-yl) butyl] phosphoric acid (Me-4PACz), and the hole transport layer adopts a hole transport material [4-(3, 6-dimethyl-9H-carbazole-9-yl) butyl] phosphoric acid (Me-4PACz). According to bottom-buried interface modification provided by the invention, a hole transport material Me-4PACz is modified by adopting a (2-phenethyl) phosphonic acid small molecule material, the modified Me-4PACz hole transport layer has high perovskite layer coverage rate, the preparation process is simple, the efficiency of the assembled solar cell is high, the stability is obviously improved, and the commercial application value is very good.

The invention relates to a solar cell and a manufacturing method thereof. The solar cell comprises a substrate, a first electrode and a second electrode, the front surface of the substrate comprises a first metallization region and a first non-metallization region, the first metallization region is provided with a first pyramid structure, the first non-metallization region is provided with a second pyramid structure, the spire of the first pyramid structure is higher than that of the second pyramid structure, and the first metallization region is provided with a first diffusion doping region; the back surface of the substrate comprises a second metallization region and a second non-metallization region, a tunneling layer and a semiconductor doping layer are sequentially laminated on one side, far away from the substrate, of the second metallization region, and the second non-metallization region is provided with a third pyramid structure; the first electrode is arranged in the first metallization region, and the first electrode is electrically connected with the first diffusion doping region; and the second electrode is arranged in the second metallization region and is electrically connected with the semiconductor doping layer. The short-circuit current output and the overall photoelectric conversion efficiency of the cell are improved, and the double-sided rate of the cell is improved.

The invention relates to a backside illuminated image sensor and a preparation method thereof, and an electronic device, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate which comprises an isolation layer and a plurality of first isolation structures which are arranged at intervals in a first direction parallel to the surface of the substrate; forming first isolation parts in the substrate, wherein the first isolation parts and the first isolation structures are arranged in a one-to-one manner and extend to the isolation layer through the back surface of the substrate; removing the substrate between the adjacent first isolation parts to obtain side wall semiconductor layers located on the side surfaces of the first isolation parts and first grooves between the adjacent side wall semiconductor layers; the size of the side wall semiconductor layer is gradually increased in the direction close to the isolation layer. And forming a bottom photosensitive layer in the first groove, and epitaxially growing a top photosensitive layer on the bottom photosensitive layer. And forming a second isolation part connected with the first isolation part in a gap between the adjacent top photosensitive layers, thereby improving the photoelectric conversion efficiency and the quantum efficiency.

The invention belongs to the field of photovoltaic glass coatings, and particularly relates to a super-hydrophilic anti-reflection wear-resistant self-cleaning coating for room-temperature curing of photovoltaic glass, which takes nano silicon dioxide sol as a main film-forming agent to cure and form a film and comprises the following raw materials in parts by weight: 55-90 parts of deionized water, 9-20 parts of nano silicon dioxide sol, 1-10 parts of a silane coupling agent and 0.001-1 part of nano titanium dioxide. The coating is prepared from the following components in parts by weight: 0.01-1 part of a surfactant, 0.01-1 part of modified polyvinyl alcohol, 0.01-1 part of water-based acrylic resin, 0.001-1 part of an antistatic agent, 1-5 parts of a curing agent, 1-5 parts of a flatting agent and 0.1-1 part of a wear-resistant agent. The super-hydrophilic anti-reflection wear-resistant self-cleaning coating has super hydrophilicity, the water contact angle is below 10 degrees, the hydrophilicity, the antistatic property, the anti-reflection property, the wear resistance and other properties of glass can be remarkably improved, and when the super-hydrophilic anti-reflection wear-resistant self-cleaning coating is applied to photovoltaic module glass, the photoelectric conversion efficiency in photovoltaic power generation can be improved.

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of solar cells. P-type doped regions and N-type doped regions are alternately arranged on the back surface of the crystalline silicon substrate, a boron diffusion doped layer, a first passivation layer and a first antireflection layer are sequentially arranged in the P-type doped regions, and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second antireflection layer are sequentially arranged in the N-type doped regions from the surface of the crystalline silicon substrate. A traditional TBC battery P region mostly adopts a two-step process of intrinsic amorphous silicon deposition and boron diffusion to form a polycrystalline silicon layer, but the P region does not contain the polycrystalline silicon layer and can be prepared through a one-step boron diffusion process, so that the process steps can be reduced, and the process time can be shortened; and the action of laser and P-region polycrystalline silicon is avoided, the patterning difficulty of the battery is reduced, and the production yield of the battery can be greatly improved.

The invention is applicable to the technical field of back contact solar cells, and provides a back contact solar cell, a photovoltaic module and a photovoltaic system.The back contact solar cell comprises a silicon substrate, a plurality of p-type doped regions and a plurality of n-type doped regions which are sequentially and alternately arranged on the back face of the silicon substrate in the first direction, and p-type fine grids electrically connected with the p-type doped regions; the n-type fine grids are electrically connected with the n-type doped regions, the isolation regions are arranged between the adjacent p-type doped regions and the n-type doped regions, and in the first direction, the ratio C1 of the width of the isolation regions to the width of the n-type doped regions is # imgabs0 #. And the photoelectric conversion efficiency of the solar cell is improved.

The invention discloses a floating type photovoltaic platform device capable of actively adjusting the angle of a photovoltaic module, which comprises floating bodies, a photovoltaic mechanism, a central control system, connecting floating bodies and gravity anchors, and is characterized in that the photovoltaic mechanism is mounted on the floating bodies, the floating bodies are connected with the gravity anchors, the gravity anchors are placed in a water area, the plurality of floating bodies are connected through the connecting floating bodies, and the central control system is connected with the central control system. The central control system is installed on the connecting floating body, the central control system is respectively connected with the floating body and the photovoltaic mechanism, the floating body comprises an adjusting air cushion and a supporting floating body, the adjusting air cushion is arranged on the supporting floating body, the photovoltaic mechanism is arranged on the adjusting air cushion, and the supporting floating body is respectively connected with the connecting floating body and the gravity anchor. The sun position and the illumination intensity are monitored in real time through the central control system, the angle of the photovoltaic mechanism is actively adjusted through the adjusting air cushion, it is ensured that the photovoltaic assembly can receive sunlight at the optimal angle all the time, and therefore the photoelectric conversion efficiency is remarkably improved.

The invention is applicable to the field of photovoltaic technology, and provides a solar cell, a cell assembly and a photovoltaic system.The solar cell comprises a silicon substrate, the silicon substrate is provided with a backlight face and a light facing face which are oppositely arranged, a plurality of grid lines and a plurality of microarrays are arranged on the backlight face side by side in the first direction, and the grid lines extend in the second direction; the microarray comprises a plurality of arranged microstructure units, an included angle is formed between the microarray and the grid line, and the first direction is crossed with the second direction; the length of the silicon substrate in the second direction is L, the range of the two side edges, parallel to the first direction, of the silicon substrate extending towards the center line by L / 9 is an edge area, the included angle in the edge area is alpha, the included angle in the area close to the position of the center line is beta, and the angle of alpha is larger than that of beta. The absorption path of light in the silicon wafer is increased, the diffuse reflection effect of reflected light of backlight surfaces in different areas is promoted, and therefore the absorption efficiency of the light is improved.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, so as to improve the photoelectric conversion efficiency of the solar cell comprising a fragmented cell, greatly reduce the mechanical damage of the fragmented cell, greatly reduce the hidden crack possibility of a photovoltaic module comprising the fragmented cell, and improve the production efficiency of the photovoltaic module. And the product yield is further improved. The preparation method of the solar cell comprises the following steps: providing a whole solar cell; a first laser device is adopted to form positioning grooves in the two ends of the to-be-segmented area respectively; a second laser device is adopted to heat the to-be-segmented area from the positioning groove until the other positioning groove is finished; spraying cooling liquid to the heated to-be-segmented area by adopting a spraying device, so that the whole solar cell is cracked in the to-be-segmented area along the first direction to form at least two segmented cells; the cooling liquid comprises oxidizing substances, and the cross section is a surface hydroxylated silicon surface; and forming a passivation layer on the fracture surface.

The invention relates to a photovoltaic module and a manufacturing method thereof, and the photovoltaic module comprises a battery string which is arranged at one side of a glass front plate, the battery string comprises a plurality of battery pieces which are sequentially arranged in a preset direction, the battery pieces are sequentially connected through welding strips, the first surfaces of the battery pieces face the glass front plate, and the second surfaces of the battery pieces deviate from the glass front plate; the first coating layer is laid on the side, away from the glass front plate, of the battery string, and the first coating layer is in direct contact with the second face of the battery piece so as to fix the battery piece and the welding strip located on the second face of the battery piece; the pre-crosslinking degree of one side, close to the battery piece, of the first film coating layer is 30%-50%; and the packaging adhesive film surrounds the circumferential edge of the battery string, and the packaging adhesive film is obtained by sequentially splicing a plurality of adhesive tapes. The problems of glue permeation, pseudo soldering and the like in the low-temperature film-coated assembly can be effectively solved, the photoelectric conversion efficiency and long-term stability of the photovoltaic assembly can be improved, the production cost of the photovoltaic assembly is reduced, and the market competitiveness of the photovoltaic assembly can be improved.

The back contact solar cell comprises a silicon substrate, a first passivation layer, a protection layer, a first electrode and a second electrode, the silicon substrate is provided with a first surface and a second surface which are opposite to each other, and one side of the second surface of the silicon substrate is provided with a P-type conductive region and an N-type conductive region which are arranged at intervals; the first passivation layer is arranged on the first surface of the silicon substrate, the protection layer is arranged on the side, away from the silicon substrate, of the first passivation layer, the first electrode is electrically connected with the P-type conductive region, and the second electrode is electrically connected with the N-type conductive region. The protection layer can prevent other stacked back contact solar cells or other objects from making contact with the surface of the first passivation layer, and the surface of the first passivation layer is prevented from being scratched or damaged by other objects, so that the passivation effect of the first passivation layer on the first surface is guaranteed, and the photoelectric conversion efficiency of the back contact solar cells is improved. In addition, due to the arrangement of the protective layer, the surface of the first passivation layer can still be well protected when the multiple back contact solar cells are stacked irregularly, and an isolation part does not need to be additionally arranged between every two adjacent back contact solar cells in the sorting and collecting process. The sorting and collecting efficiency of a plurality of back contact solar cells can be improved, the structure is simple, preparation is convenient, and the preparation cost is saved.

The utility model provides a back contact battery piece, a first pole region comprises a first bus grid line and a plurality of first grid line groups arranged at intervals along a first direction, and each first grid line group comprises a plurality of first fine grid lines arranged at intervals along a second direction and a first main grid line connected with the plurality of first fine grid lines; the second pole region comprises a plurality of second grid line groups which are arranged along the second bus grid line and along the first direction at intervals; each second grid line group comprises a plurality of second thin grid lines which are arranged along the second direction at intervals and a second main grid line which is connected with the second thin grid lines; the first main grid lines in at least two adjacent first grid line groups are connected through the first bus grid lines, and / or the second main grid lines in at least two adjacent second grid line groups are connected through the second bus grid lines. The current collection effect of a poor contact area can be improved, and the photoelectric conversion efficiency of the back contact battery piece is improved.

The invention relates to a manufacturing method of a solar cell and the solar cell, the back surface of the solar cell is provided with a first region and a second region, and a second electrode of the solar cell is arranged in the second region; the manufacturing method of the solar cell comprises the following steps: texturing a cell piece; carrying out boron diffusion on the battery piece; performing laser etching on the first region; the first area is subjected to groove type cleaning; and carrying out chain type cleaning on the second area. In the invention, the back surface of the battery piece is selectively etched through laser to remove the borosilicate glass layer in the first area and reserve the borosilicate glass layer in the second area, so that the first area of the battery piece is cleaned and polished in the subsequent preparation steps; the borosilicate glass layer of the second region protects the textured structure of the second region in the subsequent preparation step, so that the tunneling dielectric layer and the doped conductive layer in the second region also have textured structures, thereby increasing the contact area between the second electrode and the doped conductive layer, and improving the photoelectric conversion efficiency of the solar cell.

The invention discloses a solar cell which comprises a silicon substrate, the surface of at least one side of the silicon substrate is provided with a micro-suede of a sand dune-like structure, and a tunneling oxide layer is laminated on the micro-suede; the sand dune-like structure is provided with at least one vertex, and 3-6 curved side edges pass through each vertex; and the side edges are sunken towards the inner part of the sand dune-like structure. The invention also provides a preparation method of the solar cell. According to the solar cell, the surface reflectivity of the solar cell can be effectively reduced, and the characteristics of surface passivation, surface contact and the like are improved, so that the transmission efficiency and the collection efficiency of carriers are improved, and the short-circuit current density and the conversion efficiency of the solar cell are further improved.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact photovoltaic module, which comprises a battery body of which the back surface comprises a plurality of positioning areas which are arranged at intervals along a first direction, and first fine grids and second fine grids which are alternately arranged along a second direction are arranged on the back surface; each interconnection structure is electrically connected with one of the plurality of first fine grids and the plurality of second fine grids; a single interconnection structure electrically connected with the fine grids is used as a target interconnection structure, any fine grid electrically connected with the target interconnection structure comprises a first branch and a second branch, each of the first branch and the second branch comprises an end part close to the target interconnection structure, and the first branch and the second branch are arranged along the direction close to the target interconnection structure. The widths of the end parts of the first branch and the second branch in the second direction are gradually reduced, and the fine grid is one of the first fine grid and the second fine grid; and the insulating strip is positioned on any fine grid which is electrically insulated from the target interconnection structure, and is at least beneficial to improving the photoelectric conversion efficiency of the back contact photovoltaic module.

The invention relates to the technical field of solar cells, in particular to a perovskite solar cell, a preparation method thereof and a photovoltaic module. The invention aims to solve the problem that the cell performance is influenced by non-uniform coverage of the perovskite layer on the hole transport layer. For the purpose, the preparation method of the perovskite solar cell comprises the steps of preparing a hole transport layer on a substrate, preparing an interface modification layer on the hole transport layer, preparing a perovskite layer on the interface modification layer, and sequentially preparing an electron transport layer and an electrode on the perovskite layer to obtain the perovskite cell, the wettability of the hole transport layer can be improved by introducing 3-hydroxyphenylboronic acid into the adjacent interface of the perovskite layer and the hole transport layer, so that the coverage rate of the perovskite layer is increased, meanwhile, the 3-hydroxyphenylboronic acid is coordinated with metal ions in the perovskite layer, non-radiative recombination between the hole transport layer and the perovskite layer interface can be reduced, and the hole transport efficiency is improved. And the carrier transmission efficiency is improved.

The embodiment of the invention relates to the field of solar cells, provides a solar cell and a preparation method thereof, and at least can solve the problem that the performance of a fragmented cell is poor. The solar cell comprises fragmented cells, at least two fragmented cells are formed by segmenting the same whole solar cell along a first direction, and each fragmented cell comprises a first surface, a second surface and a third surface connected with the first surface and the second surface, the first surface is a partial area of the front surface of the whole solar cell, the second surface is a partial area of the back surface of the whole solar cell, and the third surface is a cross section of the fragmented cell after segmentation processing; the crystalline silicon layer is positioned on the third surface; the silicon oxide layer is positioned on the surface of the crystalline silicon layer; and the metal oxide layer is positioned on the silicon oxide layer.

The invention discloses a TOPCon battery capable of reducing UV attenuation and a preparation method thereof, and belongs to the field of TOPCon batteries, the TOPCon battery comprises a silicon substrate, and three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are sequentially deposited on the front surface of the treated silicon substrate to form a front surface antireflection layer; and depositing three silicon nitride layers on the back of the silicon substrate to form a back antireflection layer. The polycrystalline solar cell has the advantages that three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are arranged on the front face of the silicon substrate to serve as the front face antireflection layer, the color stability is high, the surface of the silicon substrate can be better passivated, light reflection can be better reduced, the open-circuit voltage and the short-circuit current of the polycrystalline solar cell are improved, and the service life of the polycrystalline solar cell is prolonged. Therefore, the photoelectric conversion efficiency of the polycrystalline solar cell is effectively improved.

The invention relates to the technical field of solar cell preparation, and discloses a laser patterned polycrystalline silicon passivation cell, a preparation method and a photovoltaic module. The preparation method comprises the following steps: preparing a passivation contact structure and an oxidation film on the surface of a silicon substrate; laser patterning processing is carried out on the surface of the silicon substrate, the passivation contact structure and the non-metallization area of the oxidation film, so that the processed non-metallization area is not subjected to alkali etching resistance, and doping atoms are pushed into the silicon substrate through laser diffusion to form a doping area; performing alkali wash etching to form an alkali wash etching region etched into the silicon substrate, and leaving a doped region on the silicon substrate exposed in the alkali wash etching region; respectively depositing a passivation antireflection film and an antireflection film on the front surface and the back surface of the silicon substrate; and preparing the metal electrode. According to the preparation method, parasitic absorption loss can be avoided, the transverse transmission capability of internal carriers can be enhanced, the light utilization rate and the photoelectric conversion efficiency of the cell are further improved, the process window is larger, and the process steps are simple.

The invention provides a laser-assisted sintering method, a crystalline silicon solar cell and a photovoltaic module, and relates to the technical field of crystalline silicon solar cells. The laser-assisted sintering method comprises the steps that a to-be-sintered area of the crystalline silicon solar cell is divided into N equal parts in the direction perpendicular to a fine grid line, the first to Nth to-be-sintered areas which are arranged in sequence are obtained, and N is a positive integer larger than or equal to 4; and laser is adopted to irradiate the metal grid lines on all the to-be-sintered areas, and bias voltage is loaded on the metal grid lines on all the to-be-sintered areas so that the metal grid lines can be sintered. The crystalline silicon solar cell prepared with the metal grid lines is divided into a plurality of to-be-sintered areas, the bias voltage and the laser output power of each to-be-sintered area are controlled, the sintering effect of the metal grid lines can be effectively improved, the crystalline silicon solar cell forms good ohmic contact, and therefore the photoelectric conversion efficiency of the crystalline silicon solar cell is improved.

The utility model discloses a hybrid passivation back contact cell. The cell comprises a silicon wafer; the heterostructure comprises a first passivation layer which is at least stacked on the first region and a first microcrystalline silicon layer which is fully or partially doped; the first electrode structure is located on the first microcrystalline silicon layer in the heterostructure; the first passivation structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are stacked on the second region; the second electrode structure is located on the doped polycrystalline silicon layer in the first passivation structure; the second passivation structure comprises a second passivation layer at least stacked on the first surface and a second microcrystalline silicon layer which is fully or partially doped, the crystallization rate of the second microcrystalline silicon layer is larger than that of the first microcrystalline silicon layer, and the doping type of the second microcrystalline silicon layer is opposite to that of the first microcrystalline silicon layer. According to the utility model, good passivation and tunneling contact performance can be realized, and the electrical performance and the photoelectric conversion efficiency of the cell are significantly improved.

The invention discloses a solar cell and a photovoltaic module, and belongs to the field of photovoltaic technology. The solar cell comprises a cell body, and the width of the cell body is L1 along a first direction; the pattern area is arranged on the surface of the battery piece body, a plurality of current collection electrodes extending in the second direction are arranged in the pattern area, the current collection electrodes comprise the first current collection electrodes and the second current collection electrodes, the first current collection electrodes and the second current collection electrodes are arranged at intervals in the first direction, and the second direction is different from the first direction; the battery piece body is provided with a first side edge and a second side edge which are oppositely arranged, the first side edge and the second side edge comprise parts extending in the second direction, and the distance between the position, close to the first side edge, of the pattern area and the first side edge is D1; when the polarities of the first collector electrode and the second collector electrode are opposite, L1 / D1 is greater than or equal to 80 and less than or equal to 400; and / or when the polarity of the first collector electrode and the polarity of the second collector electrode are the same, 50 < = L1 / D1 < = 350 is satisfied.

The invention provides a solar cell and a photovoltaic module. The solar cell comprises a silicon substrate. And the first doped polycrystalline silicon layer is arranged on one side of the silicon substrate. Wherein the silicon substrate comprises a first edge and a second edge which are oppositely arranged along a second direction, and a center line which is positioned between the first edge and the second edge and extends along the first direction. The first doped polycrystalline silicon layer comprises a plurality of strip-shaped regions which extend in the first direction and are distributed at intervals in the second direction, the first doped polycrystalline silicon layer strip-shaped regions arranged corresponding to the center line are second strip-shaped regions, and the other first doped polycrystalline silicon layer strip-shaped regions are first strip-shaped regions; the width of the second strip-shaped area in the second direction is larger than that of the first strip-shaped area in the second direction. The first direction intersects the second direction. According to the solar cell disclosed by the invention, the area ratio of the electron collection region to the hole collection region is optimized, and the photoelectric conversion efficiency of the cell is improved.

The invention relates to the technical field of photovoltaic cells, and discloses a back contact solar cell and a preparation method thereof. The preparation method comprises the following steps: providing a substrate layer of a first conductive type having a first surface and a second surface opposite to each other; a first groove is formed in the first surface, and a bulge is formed beside the first groove; performing doping treatment on the inner wall surface of the first groove to form a first doping layer; the first doped layer is of a second conductive type; forming a passivation layer on the surface of the first doping layer; a second groove isolated from the first groove is formed in the protrusion; forming a first tunneling oxide layer on the second groove; forming a second doping layer of the first conduction type in the second groove and on the first tunneling oxide layer; a first electrode and a second electrode are formed, the first electrode penetrates through the passivation layer to be connected with the first doping layer, and the second electrode is connected with the second doping layer. The first groove and the second groove which are relatively isolated are formed by grooving at different positions of the substrate layer, so that efficient current collection is facilitated, short circuit is prevented, and the photoelectric conversion efficiency and the power generation efficiency are improved.

The invention relates to a preparation method of an electrode grid line and a photovoltaic cell, and relates to the field of photovoltaic technology, and the preparation method comprises the following steps: S1, providing a substrate, and forming a polymer layer on the substrate; s2, pressing a groove corresponding to a required electrode pattern on the polymer layer by using a mold to obtain a template; s3, a conductive material is smeared on the polymer layer, the groove is filled with the conductive material, and the redundant conductive material is scraped off; s4, providing a base material, covering the base material with the template, and transferring the polymer layer and the conductive material to the base material at a certain temperature and pressure; s5, stripping the substrate from the polymer layer, dissolving the polymer layer, and leaving the conductive material to be adhered to the base material; and S6, sintering the conductive material to form the electrode grid line. According to the invention, plate coating, high-precision transfer printing, water dissolution and high-temperature sintering technologies are utilized, the production process is efficient, and the accuracy of electrode patterns can be maintained.

The invention relates to a solar cell, a laminated cell and a photovoltaic module, and the solar cell comprises a substrate, a first surface of the substrate comprises a first region and a second region, the first region comprises a first sub-region, a tunneling layer is disposed on the first region, and a doped conductive layer is disposed on the side, away from the substrate, of the tunneling layer. The first passivation layer is arranged on the side, away from the tunneling layer, of the doped conductive layer and on the second area, the first anti-reflection layer is arranged on the side, away from the substrate, of the first passivation layer, the first fine grids are arranged on the first sub-areas in a one-to-one correspondence mode, and at least part of structures of the first fine grids penetrate through the first anti-reflection layer and the first passivation layer. The distance L1 between the first fine grid and the edge of the first sub-region corresponding to the first fine grid in the first direction meets the condition that L1 is larger than or equal to 50 micrometers and smaller than or equal to 800 micrometers, and therefore light parasitic absorption of the doped conductive layer can be reduced, meanwhile, the performance of carrier transverse transmission is guaranteed, and the photoelectric conversion efficiency of the solar cell is improved.

The invention relates to a passivation layer, a perovskite solar cell, a preparation method of the perovskite solar cell, a laminated cell and a photovoltaic module. The passivation layer comprises a compound shown in a formula (I): # imgabs0 #; wherein R1 to R5 are respectively and independently selected from one of hydrogen, halogen, amino, hydroxyl, cyano, sulfydryl, substituted or unsubstituted C1-C8 alkyl and substituted or unsubstituted C1-C8 alkoxy. The carboxyl hydroxyl group in the compound and BX2 with unsaturated coordination number on the surface of the perovskite thin film can form a coordination bond, so that surface defects of the perovskite thin film are effectively passivated, non-radiative recombination on the surface of the perovskite thin film is inhibited, and the photoelectric conversion efficiency of the perovskite solar cell is further improved.

The invention provides a hole transport material, a preparation method thereof and a perovskite solar cell. The chemical structural formula of the hole transport material is # imgabs0 #, wherein each A is independently a heteroatom. A thiophene-methoxy triphenylamine group and a thiophene-methylthio triphenylamine group are introduced into an acridine phosphate side chain, and a series of novel hole transport materials are provided. The hole transport material has higher decomposition temperature, better thermal stability and higher hole mobility, thereby being beneficial to hole extraction and transport. The hole transport material has a deep HOMO energy level matched with perovskite, and can be used in a perovskite solar cell without doping any additive, so that the perovskite solar cell has higher photoelectric conversion efficiency, photovoltaic performance and stability, and the material has repeatability.

The invention belongs to the technical field of solar cells, and provides a photovoltaic cell back surface processing method, a TOPCon cell, a preparation method and a photovoltaic module. According to the photovoltaic cell back surface treatment method, through polishing treatment of the back surface of a silicon substrate, oxidation treatment is carried out on a doped polycrystalline silicon layer in a non-metallization area in sequence, the oxidation treatment depth is controlled to reach the tail of a doped polycrystalline silicon band so as to form a silicon oxide layer in the non-metallization area, and subsequent acid pickling is carried out. The reflectivity of the back surface of the doped polycrystalline silicon band tail in the non-metallization region is higher than that of the back surface of the doped polycrystalline silicon layer in the metallization region; therefore, the back metal electrode adhesion performance and the metal contact performance of the metallization region on the back of the cell can be further improved, the passivation effect and the light secondary reflection absorption effect of the non-metallization region on the back of the cell can be further improved, and parasitic absorption can be reduced, so that the photoelectric conversion efficiency of the cell can be greatly improved.