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8944results about How to "Suppress generation" patented technology
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Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
ActiveUS8563443B2Accelerates the carbonization processHigh conformalitySemiconductor/solid-state device manufacturingChemical vapor deposition coatingDielectricHalogen
A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.
Owner:ASM JAPAN
Modulation of stem and progenitor cell differentiation, assays, and uses thereof
InactiveUS20030235909A1Modulate their differentiationIncrease speedOrganic active ingredientsSenses disorderAssayPlacenta
The present invention relates to methods of modulating mammalian stem cell and progenitor cell differentiation. The methods of the invention can be employed to regulate and control the differentiation and maturation of mammalian, particularly human stem cells along specific cell and tissue lineages. The methods of the invention relate to the use of certain small organic molecules to modulate the differentiation of stem or progenitor cell populations along specific cell and tissue lineages, and in particular, to the differentiation of embryonic-like stem cells originating from a postpartum placenta or for the differentiation of early progenitor cells to a granulocytic lineage. Finally, the invention relates to the use of such differentiated stem or progenitor cells in transplantation and other medical treatments.
Owner:SIGNAL PHARMA LLC +2
Method of manufacturing semiconductor device
InactiveUS20110171775A1Without deteriorating reliability of deviceHigh bonding strengthSolid-state devicesSemiconductor/solid-state device manufacturingSemiconductorPlasma polymerization
A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.
Owner:RENESAS ELECTRONICS CORP
Method for depositing metal-containing film using particle-reduction step
InactiveUS20160168699A1Reduce surface roughnessSolve the lack of resistanceChemical vapor deposition coatingPlasma techniqueAMINO BASENitride
A method for forming a metal oxide or nitride film on a substrate by plasma-enhanced atomic layer deposition (PEALD), includes: introducing an amino-based metal precursor in a pulse to a reaction space where a substrate is placed, using a carrier gas; and continuously introducing a reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of the precursor and the pulse of RF power do not overlap, wherein conducted is at least either step (a) comprising passing the carrier gas through a purifier for reducing impurities before mixing the carrier gas with the precursor, or step (b) introducing the reactant gas at a flow rate such that a partial pressure of the reactant gas relative to the total gas flow provided in the reaction space is 15% or less.
Owner:ASM IP HLDG BV
Positive resist composition and pattern-forming method
ActiveUS20080248425A1Suppress generationPhotosensitive materialsRadiation applicationsPolymer scienceActinic Rays
A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent:(x) an alkali-soluble group;(y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and(z) a group that decomposes by action of an acid,wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.
Owner:FUJIFILM CORP
Shower plate, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the shower plate
InactiveUS20090286405A1Improve stabilityConvenience to workElectric discharge tubesSemiconductor/solid-state device manufacturingEngineeringElectron
Provided is a shower plate in which there's no need for a cover plate. The shower plate 105 is disposed in a processing chamber 102 of a plasma processing apparatus, for discharging a plasma excitation gas to generate plasma in the processing chamber 102, and the shower plate 105 includes a horizontal hole 111 for introducing the plasma excitation gas into the shower plate 105 from a gas inlet port 110 of the plasma processing apparatus; and a vertical hole 112 communicating with the horizontal hole 111, wherein the shower plate 105 is formed as a single body.
Owner:TOKYO ELECTRON LTD +1
Electrostatic chuck member, method of manufacturing the same, and electrostatic chuck device
InactiveUS20090056112A1Good effectComplicated processingSleeve/socket jointsWave amplification devicesEngineeringMechanical engineering
A plurality of protruded portions is formed through embossing and is distributed and arranged regularly or irregularly on an electrostatic chuck surface, and has a circular or almost circular top surface shape and a roundness (R) of 0.01 mm or more is applied to an edge part defined by an intersection of the top surface and a side surface and a portion to which the roundness is applied occupies a quarter of a height h of the protruded portion or more.
Owner:SHINKO ELECTRIC IND CO LTD
Plasma processing apparatus with insulated gas inlet pore
ActiveUS7712435B2Low reliabilityReduce throughputElectric discharge tubesSemiconductor/solid-state device manufacturingGas passingProduct gas
A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the reaction chamber; and a gas inlet pipe coupled to the gas inlet pore for introducing the gas into the reaction chamber. The gas inlet pipe is grounded and insulated from the gas inlet pore, wherein an insulation member is placed inside the gas inlet pipe and the gas inlet pore.
Owner:ASM JAPAN
Manufacturing method of a silicon carbide semiconductor device
InactiveUS8071482B2Smooth curveImprove breakdown voltageSemiconductor/solid-state device detailsSolid-state devicesSemiconductorDry etching
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.
Owner:FUJI ELECTRIC CO LTD
Power control unit
InactiveUS20060180363A1Eliminate needSimple structureAuxillary drivesDigital data processing detailsEngineeringDrive motor
A hybrid vehicle includes an engine and a drive motor which adds power to power generated by the engine in a superimposed manner to assist the engine. A power control unit includes: a fourth rotor sensor as a vehicle speed sensor which detects vehicle speed of the hybrid vehicle; an accelerator sensor which detects an amount of accelerator operation; and an ECU having an assist map which determines an output command reference value for the drive motor based on the vehicle speed and the amount of accelerator operation. The ECU outputs, to the drive motor, a corrected output command value which is calculated by adding an additional value corresponding to a rate of change in the amount of accelerator operation, to the output command reference value obtained from the assist map.
Owner:HONDA MOTOR CO LTD
Modulation of stem and progenitor cell differentiation, assays, and uses thereof
InactiveUS7498171B2Increase speedWell formedOrganic active ingredientsSenses disorderProgenitorAssay
The present invention relates to methods of modulating mammalian stem cell and progenitor cell differentiation. The methods of the invention can be employed to regulate and control the differentiation and maturation of mammalian, particularly human stem cells along specific cell and tissue lineages. The methods of the invention relate to the use of certain small organic molecules to modulate the differentiation of stem or progenitor cell populations along specific cell and tissue lineages, and in particular, to the differentiation of embryonic-like stem cells originating from a postpartum placenta or for the differentiation of early progenitor cells to a granulocytic lineage. Finally, the invention relates to the use of such differentiated stem or progenitor cells in transplantation and other medical treatments.
Owner:SIGNAL PHARMA LLC +2
Solid-state imaging device, method for producing same, and camera
ActiveUS20070210395A1Suppress generationImprove migration abilityTelevision system detailsSolid-state devicesPhotovoltaic detectorsPhotodetector
A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
Owner:SONY CORP
Planar coil and contactless electric power transmission device using the same
InactiveUS20100277004A1Avoid it happening againImprove productivityBatteries circuit arrangementsElectromagnetic wave systemElectric power transmissionEddy current
This invention has an object to a planar coil, a contactless electric power transmission device using the same. This planar coil is configured to suppress an eddy current developed between adjacent turns of wire for minimizing adverse effects on ambient electrical appliances resulting from heat generation. The planar coil 1 in the present invention is formed of spiral shaped wire 7 coated with thinned insulative film, in which adjacent turns of the wire 7 are spaced in radial direction at such a predetermined interval to suppress an eddy current. This planar coil 1 is preferably employed as a power transmission coil or power receiving coil.
Owner:PANASONIC CORP
Color imaging apparatus
ActiveUS20120293695A1Accurate estimateSuppress generationTelevision system detailsTelevision system scanning detailsColor imageAverage filter
A color imaging apparatus comprising: a single-plate color imaging element including color filters arranged on pixels arranged in horizontal and vertical directions where all colors are arranged in each line in the directions; weighted average filters with filter coefficients set in a local area extracted from a mosaic image acquired from the color imaging element corresponding to the weighted average filters so that proportions of sums of the filter coefficients of each color in the lines in the horizontal and vertical directions are equal; a weighted average calculation unit that calculates weighted average values of each color; a demosaicking processing unit that calculates a pixel value of another color at a pixel position of a target pixel of demosaicking processing and that interpolates a pixel value of the target pixel based on a color ratio or a color difference of the calculated weighted average values to calculate the pixel value.
Owner:FUJIFILM CORP
Negative electrode and non-aqueous electrolyte secondary battery using the same
InactiveUS20080096110A1Good charge and discharge cycle performanceImprove cycle performanceNon-aqueous electrolyte accumulatorsElectrode carriers/collectorsPorous substrateConductive materials
The negative electrode for a non-aqueous electrolyte secondary battery of the present invention includes a conductive porous substrate, and a conductive material and an active material filled in pores of the porous substrate. The active material contains at least one of a metal element and a semi-metal element capable of reversibly absorbing and desorbing lithium.
Owner:PANASONIC CORP
Method for fabricating recess gate in semiconductor device
InactiveUS20090087960A1Suppress generationReduce line widthTransistorSolid-state devicesEtchingOxide
A method for fabricating a recess gate in a semiconductor device includes etching a silicon substrate to form a trench that defines an active region, forming a device isolation layer that gap-fills the trench, forming a hard mask layer over the silicon substrate, the hard mask layer comprising a stack of an oxide layer and an amorphous carbon layer, wherein the hard mask layer exposes a channel target region of the active region, and forming a recess region with a dual profile by first etching and second etching the channel target region using the hard mask layer as an etch barrier, wherein the second etching is performed after removing the amorphous carbon layer.
Owner:SK HYNIX INC
Substrate treatment device
InactiveUS20080135516A1Prevent particle generationExcellent etching propertiesAfter-treatment apparatusPolycrystalline material growthSpray nozzleProduct gas
It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
Owner:KOKUSA ELECTRIC CO LTD
Plasma processing apparatus and method
ActiveUS20130162142A1Suppress generationElectric discharge tubesElectric arc lampsHigh frequency powerHalogen
A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.
Owner:TOKYO ELECTRON LTD +1
Conductive, plasma-resistant member
InactiveUS20070248832A1Improve corrosion resistanceSuppress particle contaminationMolten spray coatingNatural mineral layered productsDisplay deviceFlat panel display
An electrically conductive, plasma-resistant member adapted for exposure to a halogen-based gas plasma atmosphere includes a substrate having formed on at least part of a region thereof to be exposed to the plasma a thermal spray coating composed of yttrium metal or yttrium metal in admixture with yttrium oxide and / or yttrium fluoride so as to confer electrical conductivity. Because the member is conductive and has an improved erosion resistance to halogen-based corrosive gases or plasmas thereof, particle contamination due to plasma etching when used in semiconductor manufacturing equipment or flat panel display manufacturing equipment can be suppressed.
Owner:SHIN ETSU CHEM IND CO LTD
Modulation of stem and progenitor cell differentiation, assays, and uses thereof
The present invention relates to methods of modulating mammalian stem cell and progenitor cell differentiation. The methods of the invention can be employed to regulate and control the differentiation and maturation of mammalian, particularly human stem cells along specific cell and tissue lineages. The methods of the invention relate to the use of certain small organic molecules to modulate the differentiation of stem or progenitor cell populations along specific cell and tissue lineages, and in particular, to the differentiation of embryonic-like stem cells originating from a postpartum placenta or for the differentiation of early progenitor cells to a granulocytic lineage. Finally, the invention relates to the use of such differentiated stem or progenitor cells in transplantation and other medical treatments.
Owner:CELULARITY INC +2
Atmospheric transfer chamber, processed object transfer method, program for performing the transfer method, and storage medium storing the program
InactiveUS20060207971A1Improve operation ratePrevent qualityDecorative surface effectsSemiconductor/solid-state device manufacturingCooling UnitsProduct gas
An atmospheric transfer chamber, connected to an object processing chamber for processing a target object by using a plasma of a halogen-based gas, for transferring the target object therein, the atmospheric transfer chamber includes a dehumidifying unit for dehumidifying air in the atmospheric transfer chamber. The dehumidifying unit includes a desiccant filter, a cooling unit for cooling the air introduced into the atmospheric transfer chamber, and an air conditioner. The atmospheric transfer chamber is connected to a reaction product removal chamber for removing reaction products of a halogen-based gas attached to the target object, wherein halogen in reaction products attached to the target object is reduced.
Owner:TOKYO ELECTRON LTD
Solid-state imaging device, drive method thereof and electronic apparatus
ActiveUS20090303371A1Improve charging capacityHigh sensitivityTelevision system detailsTelevision system scanning detailsPhotoelectric conversionEngineering
A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.
Owner:SONY CORP
Semiconductor device and manufacturing method thereof
ActiveUS20050153573A1Suppress generationTransistorSolid-state devicesDeposition temperatureDevice material
A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NH3 gas, an NH3 gas purge step of purging NH3 gas, and a step of further repeating the deposition step, the anneal step, and the NH3 gas purge step for at least one time. The deposition step is performed using titanium halide gas and NH3 gas as material gases and with a deposition temperature of 300° C.-450° C. to form the TiN film by a thickness of 1 nm-5 nm for each deposition step. Thus, a semiconductor device in which generation of irregularly grown objects in the TiN film is suppressed and a manufacturing method thereof can be provided.
Owner:RENESAS ELECTRONICS CORP +1
Image display apparatus
InactiveUS20120013582A1Enhance the imageLess streakingCathode-ray tube indicatorsElectric discharge lampsElectrical resistance and conductanceResistor
An image display apparatus comprises a face plate including a common electrode extending in an outside of an image region along a one side of the image region, n first resistor members connected to the common electrode and connected to each of anodes in the divisional regions corresponding thereto, and a second resistor member connecting between one and the other of the first resistor members. R1 is an average resistance value of each first resistor member per length of one pixel including at least one of the light emitting members. R1all is a resistance value of each first resistor member for a total length in the image region. R2 is a resistance value of the second resistor member. And, a relationship of 0.1×R1<R2<R1all is met.
Owner:CANON KK
Thin film transistor and display device
InactiveUS20110095288A1Generation of a leak current may be suppressedIncrease brightnessTransistorSemiconductor/solid-state device manufacturingHydrogenDisplay device
There is provided a thin film transistor capable of suppressing generation of a leak current in an oxide semiconductor film. A thin film transistor 1 includes a gate electrode 12 on a substrate 11, and includes a gate insulating film 13 so as to cover the gate electrode 12 and the substrate 11. An oxide semiconductor film 14 is formed in a region corresponding to the gate electrode 12 on the gate insulating film 13, and a source electrode 15A and a drain electrode 15B are provided with a predetermined interval in between on the oxide semiconductor film 14. A protective film 16 is formed over a whole surface of the substrate 11 so as to cover a channel region 14A of the oxide semiconductor film 14, the source electrode 15A, and the drain electrode 15B. The protective film 16 is composed of an aluminum oxide film, and this aluminum oxide film is formed by an atomic layer deposition method. An entry of hydrogen into the oxide semiconductor film 14 is suppressed by the protective film 16.
Owner:JOLED INC
Dispersion composition, polymerizable composition, light-shielding color filter, solid-state image pick-up element, liquid crystal display device, wafer level lens, and image pick-up unit
ActiveUS20110124824A1Good shading effectGood dispersionPhotomechanical apparatusNon-linear opticsLiquid-crystal displayTitanium
A dispersion composition is provided in which the dispersibility of titanium black is high, the sedimentation of titanium black over time is suppressed, and overall dispersibility and storage stability are high. Further, a polymerizable composition is provided in which favorable coating property on a substrate and even film thickness can be obtained, generation of residue in an unexposed region when a pattern is formed can be suppressed, and favorable pattern shape having any steps after exposure / development can be obtained. The dispersion composition contains (A) titanium black, (B) a graft copolymer and (C) a solvent.
Owner:FUJIFILM CORP
Display device and electrical appliance using the same
InactiveUS20070046874A1Quality improvementDifficult and inconvenientCathode-ray/electron-beam tube vessels/containersNon-linear opticsLiquid-crystal displayDisplay device
A liquid crystal display device comprising a pair of substrates, a liquid crystal display panel having a liquid crystal layer positioned between the substrates, a transparent protective plate arranged on a front surface side of the display panel, and an optically transparent layer between the display panel and the protective plate, and wherein the protective plate includes fine concavity and convexity configurations on at least a surface thereof toward the display panel.
Owner:HITACHI LTD
Light-emitting device, method for manufacturing the same, and cellular phone
ActiveUS8610155B2Keep for a long timeGeneration of defective coverage due to steps can be suppressedDischarge tube luminescnet screensFinal product manufactureElectricityEngineering
Owner:SEMICON ENERGY LAB CO LTD
Active dry sensor module for measurement of bioelectricity
InactiveUS20090156925A1Component can be removedAvoid dangerElectroencephalographySensorsEngineeringReagent
An active dry sensor module for measurement of bioelectricity is disclosed. The active dry sensor module of the present invention excludes the use of a conductive gel, thereby not supplying unpleasantness and discomfort to a reagent and preventing the interference of the signal due to a noise component. Further, the active dry sensor module of the present invention amplifies the biomedical signal to a desired level, thereby precisely and easily measuring the biomedical signal.
Owner:NEUROSKY
Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver
ActiveUS7141825B2Inhibit migrationImprove reliabilitySolid-state devicesSemiconductor devicesAlloyLight emitting device
A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.
Owner:STANLEY ELECTRIC CO LTD
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