1086results about How to "Suppress generation" patented technology

A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent:

• • (x) an alkali-soluble group;
  • (y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and
  • (z) a group that decomposes by action of an acid,

wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.

A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

A method for fabricating a recess gate in a semiconductor device includes etching a silicon substrate to form a trench that defines an active region, forming a device isolation layer that gap-fills the trench, forming a hard mask layer over the silicon substrate, the hard mask layer comprising a stack of an oxide layer and an amorphous carbon layer, wherein the hard mask layer exposes a channel target region of the active region, and forming a recess region with a dual profile by first etching and second etching the channel target region using the hard mask layer as an etch barrier, wherein the second etching is performed after removing the amorphous carbon layer.

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NH₃ gas, an NH₃ gas purge step of purging NH₃ gas, and a step of further repeating the deposition step, the anneal step, and the NH₃ gas purge step for at least one time. The deposition step is performed using titanium halide gas and NH₃ gas as material gases and with a deposition temperature of 300° C.-450° C. to form the TiN film by a thickness of 1 nm-5 nm for each deposition step. Thus, a semiconductor device in which generation of irregularly grown objects in the TiN film is suppressed and a manufacturing method thereof can be provided.

A dispersion composition is provided in which the dispersibility of titanium black is high, the sedimentation of titanium black over time is suppressed, and overall dispersibility and storage stability are high. Further, a polymerizable composition is provided in which favorable coating property on a substrate and even film thickness can be obtained, generation of residue in an unexposed region when a pattern is formed can be suppressed, and favorable pattern shape having any steps after exposure/development can be obtained. The dispersion composition contains (A) titanium black, (B) a graft copolymer and (C) a solvent.

A positive resist composition including a base component, an acid-generator component and a fluorine-containing polymer component (F) in a specific amount, the fluorine-containing polymer component (F) including a fluorine-containing polymer (F1) consisting of a structural unit (F-1) represented by general formula (F-1) (R^C represents a hydrogen atom or a methyl group, R¹ and R² represent a hydrogen atom, an alkyl group or a fluorinated alkyl group, R³ represents a fluorine atom or a fluorinated alkyl group, and R⁴ represents an alkyl group or a fluorinated alkyl group) or a fluorine-containing copolymer (F2) containing the structural unit (F-1) and at least one structural unit selected from the group consisting of a structural unit (F-2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (F-3) represented by general formula (F-3) (R^C represents a hydrogen atom or a methyl group, Z represents a single bond or a divalent linking group, and r represents an integer of 0 to 2).

A field effect transistor includes: a first nitride semiconductor layer having a plane perpendicular to a (0001) plane or a plane tilted with respect to the (0001) plane as a main surface; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider bandgap than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; and a source electrode and a drain electrode formed so as to contact at least a part of the second nitride semiconductor layer or the third nitride semiconductor layer. A recess that exposes a part of the second nitride semiconductor layer is formed between the source electrode and the drain electrode in the third nitride semiconductor layer. A gate electrode is formed in the recess and an insulating film is formed between the third nitride semiconductor layer and the gate electrode.

According to the invention, an optical film with adhesive on both sides comprises: an optical film including a polarizing plate; a first pressure sensitive adhesive layer provided on a surface of the optical film at a side configured to be bonded to an image display cell; and a second pressure sensitive adhesive layer provided on a surface of the optical film at a side configured to be bonded to a transparent plate or the touch panel. Further, a protective sheet is releasably attached on each of the first pressure sensitive adhesive layer and the second pressure sensitive adhesive layer. A thickness of the second pressure sensitive adhesive layer is preferably 30 μm or more. In a practical use, the optical film with adhesive on both sides according to the present invention is, for example, disposed between a front transparent plate or a touch panel and an image display cell.

A circuit substrate comprises a glass substrate 16, through-holes 18 formed through the glass substrate 16 and via electrodes 20 buried in the through-holes 18. An opening width of the through-holes 18 is minimum inside the glass substrate and is increased toward both surfaces of the glass substrate 16. Accordingly, the detachment of the via electrodes 20 can be prevented without increasing the surface roughness of the inside walls of the through holes, and stresses generated in the core substrate can be mitigated.

The invention provides a glass member provided with a sealing material layer, which suppresses generation of failures such as cracks or breakage of glass substrates or a sealing layer even when the distance between two glass substrates is narrowed, and thereby makes it possible to improve the sealing property between the glass substrates and its reliability. A glass substrate has a surface provided with a sealing region, on which a sealing material layer having a thickness of at most 15 μm is formed. The sealing material layer includes a fired material of a glass material for sealing containing a sealing glass, a laser absorbent and optionally a low-expansion filler, wherein the total content of the laser absorbent and the low-expansion filler being the optional component in the glass material for sealing is within the range of from 2 to 44 vol %.

A nonaqueous electrolyte secondary battery includes an electrode group having a positive electrode and a negative electrode wound flatly by way of an interposed separator, a positive electrode tab electrically connected to the positive electrode, and projecting from a spiral winding surface of the electrode group, a negative electrode tab electrically connected to the negative electrode, and projecting from the spiral winding surface, and a nonaqueous electrolyte, wherein the nonaqueous solvent contains sultone compound including a ring having at least one double bond, and a distance between the positive electrode tab and the negative electrode tab is 6 mm to 18 mm.

An ozone generating system and an ozone generating method producing ozone at a high concentration and operating at high efficiency, in which a raw material gas with no nitrogen added and mainly containing oxygen is used. The amount of generation of NO_X by-product is null. A raw material gas not containing nitrogen and mainly containing oxygen is supplied to an ozone generator, an AC voltage is applied to produce discharge light having wavelength of 428 nm to 620 nm, a catalytic material containing a photocatalytic material with a band gap energy of 2.0 eV to 2.9 eV is provided on an electrode or a dielectric in a discharge region, gas pressure is kept at 0.1 MPa to 0.4 MPa, and ozone is generated.

An optical pickup apparatus for conducting recording and/or reproducing information of an optical information recording medium, comprises a light source; a converging optical system having an objective lens; and a photo-detector. The converging optical system comprises a plastic lens and a spherical aberration deviation correcting element to correct deviation of a spherical aberration of the converging optical system. A numerical aperture of the objective lens at an image-side is 0.65 or more.

A probe (1A) has a cutting blade portion (2) at a tip end that is brought into contact with a pad electrode (5). The cutting blade has a cutting edge that is in a plane parallel to the direction of sliding of the blade over a pad electrode, when the edge is brought into contact with the electrode. The cutting edge (2a) has a sloping or curved shape that comes closer to the electrode from the front side to the rear side of the blade along the direction of sliding. Thus, as the cutting edge (2a) cuts into an insulating coating (7) formed on the surface of the electrode, the probe ensures satisfactory electrical conduction between the probe (1A) and the electrode because it cuts through the coating without causing swarfs.

A semiconductor nanoparticle phosphor includes a nanoparticle core composed of a group-XIII and -XV semiconductor, a first shell for coating the nanoparticle core, and a second shell for coating the first shell, a difference in a lattice constant between the nanoparticle core and the second shell being smaller than a difference in the lattice constant between the nanoparticle core and the first shell, or the first shell being smaller in the lattice constant than the nanoparticle core and the second shell being greater in the lattice constant than the nanoparticle core, or the first shell being greater in the lattice constant than the nanoparticle core and the second shell being smaller in the lattice constant than the nanoparticle core.

The invention is a fluid bed gasification and combustion processing method for urban garbage. The hearth of a fluid bed garbage furnace (4) is composed of two parts of a low temperature gasification area and a high temperature combustion area, additives (f) such as limestone, kaolin, etc. are added to the garbage furnace (4); acid gases such as chlorine, sulfur, nitrogen, etc. are removed in the furnace; and the generation of dioxin is controlled in the furnace. A water cooling spiral slag cooler (5) and a vibration sieve (6) can be utilized to efficiently reduce heat loss of slag and recycle bed materials. The whole system requires no addition of auxiliary fuel, and has the characteristics of safe reliability, no odor emission, low investment and operating cost, less secondary pollutant discharge, high power generation efficiency, etc.

After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.

The invention discloses a skin whitening composition which comprises a white mulberry root-bark extract, a chamomile extract, a rhodiola rosea extract, a grape seed extract, a licorice extract, a morus australis extract, arbutin, kojic acid dipalmitate, nicotinamide, tetrahydrodiferuloylmethane, a moisturizer and a preservative. The effective skin whitening ingredients of the skin whitening composition can inhibit the activity of tyrosinase, can block the transportation of melanin and can inhibit the formation of melanin; the skin whitening composition can be applied to skin whitening cosmetics and is safe and effective.

The invention discloses a nano ZSM-5 molecular sieve based catalyst and preparation and use methods. The molecular sieve catalyst consists of molecular sieves and metal components, wherein the molecular sieves are nano ZSM-5 molecular sieves with a short b-axis, a medium high silica-alumina ratio, less strong acid, high Lewis acid content, and resistance to hydrothermal deactivation. The preparation method is as follows: mixing a silicon source, an aluminum source, a template agent, a structure promoter, an additive and alkali with water, and stirring to prepare a precursor solution, then crystallizing, separating solid from liquid, and calcinating to obtain molecular sieve raw powder; mixing the molecular sieve raw powder with an ammonium salt solution, stirring, filtering, mixing with the ammonium salt solution for several times, stirring, filtering, and calcinating to obtain hydrogen-type ZSM-5 molecular sieves; mixing with the metal precursor solution, drying and calcinating to obtain the aromatization catalyst. The use method is as follows: transforming oxy-compound raw materials to aromatic hydrocarbon through the catalyst under the reaction conditions. The nano ZSM-5 molecular sieve based catalyst has the characteristics of being high in aromatics yield (reaching up to 99%) and long in service life (the catalyst is alive after 300 hours, and the aromatics selectivity reaches up to 70% after the catalyst is subjected to hydrothermal aging at 760 DEG C for 4 hours).

The generation of residues or flakes of a color filter is suppressed to eliminate conduction failures on an LCD substrate having a color filter on an array substrate. A passivation film formed between a pixel electrode formed in each of a plurality of pixel regions and a TFT for driving the pixel electrode has a multi-layer structure constituted by SiN layers and a SiO layers, and the SiO layer is located at the top of the film. A resin CF layer is formed on the passivation film having such a multi-layer structure. Since the resin CF layer is formed directly on the SiO layer, reduction of the adhesion of the same is suppressed. As a result, the color filter is unlikely to come off when the resin CF layer is formed, and residues of the color filter is unlikely to be generated when a contact hole is formed in the resin CF layer. This suppresses conduction failures and makes it possible to provide a reliable TFT substrate and LCD having high display characteristics.

It is made possible to optimize the effective work function of the metal for a junction and suppress the resistance as far as possible at the interface between a semiconductor or a dielectric material and a metal. A semiconductor device includes: a semiconductor film; a Ti oxide film formed on the semiconductor film, and including at least one element selected from the group consisting of V, Cr, Mn, Fe, Co, Ni, Nb, Mo, Tc, Ru, Rh, Pd, Ta, W, Re, Os, Ir, and Pt; and a metal film formed on the Ti oxide film.

A highly reliable electronic device and a method for manufacturing the same are provided, the electronic device preventing entry of a plating solution via an external electrode and entry of moisture of external environment inside thereof, and generating no soldering defects nor solder popping defects which are caused by precipitation of a glass component on a surface of the external electrode.

The structure is formed of Cu-baked electrode layers 6a and 6b primarily composed of Cu, Cu plating layers 7a and 7b which are formed on the Cu-baked electrode layers 6a and 6b and which are processed by a recrystallization treatment, and upper-side plating layers 9a and 9b formed on the Cu plating layers 7a and 7b.

After the Cu plating layers 7a and 7b are formed, a heat treatment is performed at a temperature in the range of a temperature at which the Cu plating layers 7a and 7b are recrystallized to a temperature at which glass contained in a conductive paste is not softened (both inclusive), so that the Cu plating layers 7a and 7b are recrystallized.

A gas turbine engine has, in a cross section in the axial direction of an annular inner peripheral wall connected to a blade main body of a turbine blade, a concave part and a convex part on the front edge side and the rear edge side. The concave part has a negative curvature and is concave toward the axis, and the convex part has a positive curvature and is convex away from the axis. The flow rate on the upper face of the blade main body can be reduced in the concave part on the front edge side, thus suppressing generation of a shock wave, and the flow rate can be increased in the convex part on the rear edge side following the concave part, thus smoothly changing the flow rate on the upper face of the blade main body and thereby minimizing the pressure loss. In this way, the thickness of the blade main body can be reduced while ensuring the performance of the gas turbine engine, thereby contributing to a reduction in weight.

The present invention provides a heat insulator that is extremely low in environmental load during production and recycling, is superior in handleability and workability, and shows favorable heat-insulating properties over an extended period of time. The present invention relates to vacuum heat insulator, comprising at least a core member and an external packaging member that stores the core member and can keep inside under reduced pressure, wherein the core member is a sheet-shaped fiber aggregate containing a polyester fiber having fiber size of 1 to 6 deniers in an amount of 50 wt % or more.

Apparatus and methods for contrast enhancement and feature identification. In one implementation, an image processing apparatus utilizes latency coding and a spiking neuron network to encode image brightness into spike latency. The spike latency is compared to a saliency window in order to detect early responding neurons. Salient features of the image are associated with the early responding neurons. An inhibitory neuron receives salient feature indication and provides inhibitory signal to the other neurons within an area of influence of the inhibitory neuron. The inhibition signal reduces probability of responses by the other neurons to stimulus that is proximate to the feature thereby increasing contrast within the encoded data. The contrast enhancement may facilitate feature identification within the image. Feature detection may be used for example for image compression, background removal and content distribution.

A linearly polarized antenna includes a dielectric substrate, a ground conductor which is overlapped on one surface of the dielectric substrate, an antenna element made of linearly polarized, which is formed on an opposite surface of the dielectric substrate, a plurality of metal posts in which one end side of each of the plurality of metal posts is connected to the ground conductor, the plurality of metal posts piercing through the dielectric substrate along a thickness direction thereof, another end side of each of the plurality of metal posts being extended to the opposite surface of the dielectric substrate, the plurality of metal posts being provided at predetermined intervals to form a cavity so as to surround the antenna element, and a conducting rim which short-circuits the other end side of each of the plurality of metal posts along a line direction of the plurality of metal posts on the opposite surface side of the dielectric substrate, the conducting rim being provided while extended by a predetermined distance toward a direction of the antenna element, the conducting rim having, e.g., a triangular portion. In the linearly polarized antenna, generation of a surface wave is suppressed by the cavity and the conducting rim, and the antenna can be set to the desired radiation characteristic. Additionally, a frequency characteristic of an antenna gain can have a steep decline (notch) in an RR radio-wave emission prohibited band by utilizing a resonance phenomenon of the cavity. Therefore, the linearly polarized antenna is effective in decreasing radio wave interference with EESS or radio astronomy service.

An area with a low via pattern density is extracted from a semiconductor integrated circuit that includes the first wirings and the second wirings disposed on the upper layer of the first wirings, based on wiring layout information. Then, dummy via patterns connected either to the first wirings or the second wirings are disposed in the peripheral area of the via patterns within the selected area. With this, the dummy via can be disposed even in an area where the wirings are congested.

A multilayer coil component has an element body, a coil, a pair of first external electrodes, a pair of second external electrodes, a first connection conductor, and a second connection conductor. The coil is composed of a plurality of internal conductors arranged in the element body and connected to each other. The first external electrodes are arranged on a first principal face of the element body. The second external electrodes are arranged on the first principal face. The first connection conductor is arranged between the coil and the first external electrodes in the element body and is connected to one end of the coil and to the first external electrodes. The second connection conductor is arranged between the coil and the second external electrodes in the element body and is connected to the other end of the coil and to the second external electrodes.

The present invention provides a method of forming a metal pattern and a metal pattern obtained by the method. The method includes the steps of (I) forming on a substrate a polymer layer in which a polymer having a functional group that interacts with an electroless plating catalyst or a precursor thereof is chemically bonded directly to the substrate in a pattern form, (II) adding the electroless plating catalyst or precursor thereof to the polymer layer, and (III) forming a metal layer in the pattern form by electroless plating. The present invention also provides a method of forming a conductive film, including the steps of (A) forming on a substrate a polymerization initiating layer in which a polymer having, on a side chain thereof, a crosslinking group and a functional group having polymerization initiating capability is immobilized by a crosslinking reaction on the surface of the base material, (B) generating a graft polymer by chemically bonding a polymer having a functional group that interacts with an electroless plating catalyst or a precursor thereof directly onto the entire surface of the polymerization initiating layer, (C) adding the electroless plating catalyst or precursor thereof to the graft polymer, and (D) forming a metal layer by electroless plating.