20results about How to "Reduce line width" patented technology

The invention relates to the technical field of optoelectronic devices, and discloses a laser and a preparation method thereof, an optical module and electronic equipment. The active region and the ridge waveguide are stacked on the substrate; the first channel and the second channel are located on the two sides of the ridge waveguide; the first waveguide structure is positioned on one side, far away from the ridge waveguide, of the first channel; the second waveguide structure is positioned on one side, far away from the ridge waveguide, of the second channel; and the first waveguide structure and the second waveguide structure are used for coupling the high-order mode to an optical path outside the output port. The channels and the waveguide structures on the two sides of the double-channel ridge waveguide can be used for filtering light modes outside a laser base film, high-order mode filtering is achieved, loss of high-order mode light energy is increased, the influence of the high-order mode light energy on the ridge waveguide is prevented, then the single-mode performance of the laser is improved, the stability of output light of the laser is improved, and the laser quality is improved. The defect that part of high-order modes cannot be eliminated once the size of the ridge waveguide deviates from a design value in the preparation process is avoided.

The invention provides a feature extraction device and a use method thereof. The device comprises a spin torque ferromagnetic resonance device, the spin torque ferromagnetic resonance device comprises a ferromagnetic material layer, a heavy metal material layer and an electrode structure, spin torque ferromagnetic resonance is formed between the ferromagnetic material layer and the heavy metal material layer, and the electrode structure is connected with the ferromagnetic material layer and the heavy metal material layer; the signal input unit is used for inputting a signal to be processed to the spin torque ferromagnetic resonance device; the signal acquisition unit is used for acquiring a signal processed by the spin torque ferromagnetic resonance device; and the current generation unit is used for transmitting direct current to the spin torque ferromagnetic resonance device and enhancing or weakening magnetic relaxation of the spin torque ferromagnetic resonance device so as to regulate and control a signal output by the spin torque ferromagnetic resonance device.

The disclosure provides an external cavity quantum cascade laser testing device and method, the device comprising: an external cavity quantum cascade laser, comprising: a gain chip for generating a first light beam; a diffraction grating for diffracting the first light beam to obtain a first diffracted light beam and a second diffracted light beam, the first diffracted light beam propagating to the gain chip along a second direction for increasing the resonance strength of the gain chip; an infrared spectrometer for testing the second diffracted light beam to obtain a test result; wherein the side of the gain chip away from the diffraction grating is a back cavity surface, the side of the gain chip close to the diffraction grating is a front cavity surface, the back cavity surface and the front cavity surface have a first electric field, the back cavity surface and the diffraction grating have a second electric field, and the relative electric field strength of the second electric field relative to the first electric field is at a maximum value. The disclosure determines the optimal length of the external cavity in the device through the relationship between the relative electric field strength and the distance between the back cavity surface and the diffraction grating, and significantly reduces the output laser linewidth.

The invention discloses a sintering method for effectively reducing the ferromagnetic resonance line width of Bi-substituted garnet ferrite with a high dielectric constant, and belongs to the technical field of ferrite materials, the sintering method is a sintering route of heating-multi-stage high and low temperature alternation-cooling. According to the preparation method, the ferromagnetic resonance line width delta H of the garnet type high-dielectric-constant ferrite is improved, the grain size is increased, abnormal growth of grains after long-time sintering is avoided, the sintering difficulty of the Bi-substituted high-dielectric-constant microwave ferrite is reduced, the sintering quality of the ferrite is improved, and the sintering cost is reduced. The improvement of the batch production reliability and stability of the garnet high-dielectric-constant ferrite is facilitated, the development of a batch production process of high-dielectric-constant products is promoted, and the miniaturization development of microwave ferrite devices in China is assisted.

The invention discloses a narrow-linewidth tunable Raman laser and an emission method, and relates to the field of Raman lasers, the narrow-linewidth tunable Raman laser comprises a half-wave plate, a pumping source and a focusing lens, the pumping source and the focusing lens are respectively arranged on two sides of the half-wave plate, and a laser resonant cavity is arranged on the other side of the focusing lens. A laser resonant cavity is arranged on one side of the laser cavity, a lock cavity frequency multiplier is arranged on the other side of the laser resonant cavity, a shaping lens group is arranged between the laser resonant cavity and the lock cavity frequency multiplier, a dichroic mirror is arranged on the other side of the lock cavity frequency multiplier, and the laser resonant cavity is of a V-shaped cavity structure formed by an input mirror, an output mirror and a reflective blazed grating. A diamond crystal is arranged between the input mirror and the output mirror, the reflection type blazed grating is arranged below the diamond crystal, the stability of the laser resonant cavity is improved through the design of the reflector in the cavity, wavelength adjustment accurate to 0.01 nm is achieved, and loss in the transmission process is reduced through the cavity locking frequency multiplier of an annular cavity structure.

The invention belongs to the technical field of optical sensing, and discloses an optical sensor based on a rare earth doped microbubble cavity, which is characterized in that when the optical sensor is used for predicting the concentration, the rare earth doped microbubble cavity is pumped by utilizing pumping source laser; then injecting an immunoglobulin G solution to be detected into the microfluidic channel of the rare earth doped microbubble cavity, and recording to obtain a changed signal laser spectrum; and comparing the signal laser power with a standard curve of the relationship between the concentration and the signal laser power to find a concentration value corresponding to the same signal laser power, so as to obtain the concentration of the immunoglobulin G solution to be detected. Biomolecules are detected by using an active cavity structure of the rare earth doped microbubble cavity, so that a high-precision biosensor can be realized, the concentration of an immune globulin solution can be predicted, and whether specific binding occurs among various immune globulins can also be predicted.

The present application provides a data handling device supporting parallel processors, which can be used for data transfer between on-chip cache and off-chip memory. The device includes a control module, an arithmetic logic unit and its associated aligned cache, and a data path running in a pipeline manner consisting of a read-in DMA module, a data cache module and an output DMA module. The arithmetic logic unit used for performing calculation operations such as precision conversion is pre-placed at the data interface of the data storage unit of the processor, so that the data output from the data storage unit is first subjected to precision conversion by the arithmetic logic unit, and then transmitted to the data path, thereby minimizing the line width between the data storage module and the data handling module on the processor chip, thereby saving chip power consumption and area.

The invention provides a chip packaging method, a chip packaging module and electronic equipment. The method comprises the steps that a first packaging layer embedded with a first bonding pad layer, at least one first circuit layer and a second bonding pad layer which are electrically connected layer by layer is formed on a wafer, the first side of the first packaging layer makes contact with the wafer, the first bonding pad layer is formed on the first side of the first packaging layer, and the second bonding pad layer is formed on the second side of the first packaging layer; the first circuit layer is exposed from the second side of the first packaging layer, and the line width of the circuit in the first circuit layer is smaller than or equal to 2 microns; a second packaging layer is formed on the second side of the first packaging layer, third bonding pad layers and at least one second circuit layer are embedded in the second packaging layer, the third bonding pad layers are electrically connected layer by layer, the third bonding pad layers are electrically connected with the second bonding pad layers, and the minimum line width of the circuits in the second circuit layer is larger than that of the circuits in the first circuit layer; and removing the wafer in contact with the first side of the first packaging layer, exposing the first bonding pad layer, and electrically connecting the chip to the first bonding pad layer to obtain the chip packaging module.

The method comprises the following steps: providing a substrate; forming a plurality of first electrode structures and a plurality of bit lines in the substrate; wherein the plurality of bit lines extend along a first direction, the first electrode structures and the bit lines are arranged at intervals along a second direction, and the plurality of first electrode structures are arranged in an array; forming an MTJ structure above the first electrode structures; forming an insulating layer above the substrate, wherein the insulating layer covers the substrate and the MTJ structure; forming a plurality of electrode trenches in the insulating layer, wherein the electrode trenches expose the top surface of the MTJ structure and the top surface of the bit lines; and forming a plurality of second electrode structures in the plurality of electrode trenches. The method can reduce the alignment accuracy requirement when preparing the electrode, reduce the process difficulty, and improve the bit line density.

The invention provides a display driving device and a forming method thereof, and the forming method comprises the steps: forming a first wafer, forming a low-voltage module on the first wafer, and enabling the low-voltage module to comprise an SRAM (Static Random Access Memory) for removing brightness unevenness and an SRAM for display; a second wafer is formed, a middle-high voltage module is formed on the second wafer, and the middle-high voltage module comprises a gate driver, a source driver and a one-time programmable memory; and bonding the first wafer and the second wafer. The middle-high voltage module and the low-voltage module are separated, formed on two wafers respectively and then bonded together, and the process between the middle-high voltage module and the low-voltage module is decoupled. And the high-voltage module can adopt a process with relatively loose nodes (larger node values), so that the cost is reduced. And the low-voltage module adopts a process with relatively harsh nodes (small node values), so that the line width is reduced, the requirements on the area and speed power consumption of the low-voltage module are met, and high resolution is realized. The cost is obviously reduced, low power consumption is ensured, and the size design is more flexible.

The present invention relates to the technical field of optoelectronic devices, and discloses a laser and a preparation method thereof, an optical module, and an electronic device, comprising: a substrate; an active region and a ridge waveguide stacked on the substrate; a first channel and a second channel located on both sides of the ridge waveguide; a first waveguide structure located on a side of the first channel away from the ridge waveguide; a second waveguide structure located on a side of the second channel away from the ridge waveguide; the first waveguide structure and the second waveguide structure are used to couple a high-order mode to an optical path outside an output port. In this way, the channels and waveguide structures on both sides of the double-channel ridge waveguide can be used to filter the optical mode outside the laser base film, realize high-order mode filtering, increase the loss of high-order mode light energy, prevent the influence of high-order mode light energy on the ridge waveguide, thereby improving the single-mode performance of the laser, increasing the stability of the laser output light, and avoiding the defect that part of the high-order mode cannot be eliminated once the ridge waveguide size deviates from the design value in the preparation process.

The present application relates to a kind of self-injection terahertz light frequency comb system, wherein, terahertz quantum cascade laser is as light frequency comb source, beat frequency signal generated by self beat frequency is transmitted into first T-type biasing device;First T-type biasing device is used to transmit beat frequency signal to wave divider;Wave divider is used to divide beat frequency signal into two ways, one way is transmitted to circulator and participates in self injection, another way is connected to spectrum analyzer and carries out real-time detection;Circulator is used to keep the one-way transmission of beat frequency signal participating in self injection in loop;Phase shifter is used to phase match beat frequency signal participating in self injection;Second T-type biasing device is used to inject phase-matched beat frequency signal into terahertz quantum cascade laser;Spectrum analyzer is used to detect the self-injection beat frequency signal obtained in real time.The present application can improve the stability of system, meet the requirement as high-frequency optoelectronic oscillator.

The invention discloses a narrow linewidth vertical cavity surface emitting laser regulated by an asymmetric inner cavity, and relates to the field of semiconductor lasers, in particular to a narrow linewidth vertical cavity surface emitting laser regulated by an asymmetric inner cavity and a preparation method thereof. The laser is provided with a first electrode, a P-type Bragg reflection unit, an oxidation restriction layer, an active layer, an expansion layer, an N-type Bragg reflection unit, a substrate and a second electrode in sequence from top to bottom. The P-type Bragg reflection unit comprises a P-type Bragg reflection layer with a preset P-DBR pair number stacked, and the N-type Bragg reflection unit comprises an N-type Bragg reflection layer with a preset N-DBR pair number stacked, thereby solving the problem of large linewidth of the existing vertical cavity surface emitting laser.

The invention provides a method for reducing the line width of a semiconductor quantum dot laser on a silicon substrate, which comprises the following steps of: selecting a master laser and a slave laser to be optimized, and adopting a current pumping source as a driving source; calculating the optical injection locking area range of the slave laser according to the related parameters of the master laser and the slave laser; the injection laser power range and the injection laser wavelength range of the master laser are adjusted under different bias currents, meanwhile, the spectral line width of the slave laser is calculated, and finally the optimal line width value within the optical injection locking area range of the slave laser can be obtained under different bias currents. The method has the beneficial effects that the line width of the slave laser can be obviously reduced, the jumping phenomenon of the ground state line width of the slave laser near an excited state threshold is inhibited, and meanwhile, the re-broadening phenomenon of the line width of two energy states is inhibited.

The present invention discloses a multi-frequency linear array laser three-dimensional precision scanning method based on a metasurface array, including two laser linear array coding measurement modes of multi-frequency discrete and multi-frequency fusion. Based on a multi-frequency laser light source, a rectangular aperture, a filter array and a metasurface array, a refined discrete focus projection or fusion focus projection of a multi-frequency laser linear array on the surface of a target object can be realized. The projected laser linear array on the surface of the target object is imaged through an imaging lens and a photosensitive element, and the surface contour information of the target object is obtained by solving the geometric relationship of triangulation. This method uses a metasurface to replace traditional complex and bulky projection equipment, with a compact structure and strong functionality. It can realize diffraction-limited focus projection of multi-frequency linear array lasers, improve scanning accuracy and measurement resolution, and the coding measurement mode can adapt to the surface of target objects of different materials, taking into account both measurement efficiency and contour reconstruction integrity.

This disclosure provides a side-emitting laser and its fabrication method, which can be applied in the field of optoelectronic devices. The side-emitting laser includes: an N-plane metal electrode disposed on a substrate of the side-emitting laser; a resonant cavity disposed on the N-plane metal electrode; and a P-plane metal electrode disposed on the resonant cavity. The P-plane metal electrode includes: a first gain grating disposed at a first end of the P-plane metal electrode; and a second gain grating disposed at a second end of the P-plane metal electrode opposite to the first end. The resonant cavity includes multiple semiconductor layers, each including a refractive index grating layer. The grating periods of the refractive index grating layer, the first gain grating, and the second gain grating are the same. The refractive index grating layer is used to select the mode of the resonant light to obtain mode light. The refractive index grating layer is also used to combine the first gain grating and the second gain grating to increase the mode light, so that the resonant cavity generates laser light with a linewidth less than 10 kHz.

The invention discloses a display panel and a display device. The display panel comprises a substrate, a gate drive circuit and a plurality of sub-pixel circuits. A grid driving circuit of the display panel comprises a plurality of driving units which are arranged in a cascade mode, effective driving units in the driving units are electrically connected with sub-pixel circuits, virtual driving units in the driving units are disconnected with the sub-pixel circuits, and the virtual driving units do not have an output function. The dummy driving units may input shift signals to the corresponding active driving units. Therefore, the partial structure of the virtual driving unit is similar to that of the effective driving unit, so that the etching uniformity of the gate driving circuit can be improved, the deviation of the line width and the thickness of the lines formed by etching in different areas of the gate driving circuit is reduced, and the reliability of the gate driving circuit is improved. And the load uniformity of the shift signals accessed by the plurality of effective driving units can be improved, so that the stability of the display panel can be improved.

This invention discloses a coplanar waveguide structure, comprising: a top cover film, a substrate, and a bottom cover film sequentially bonded together; the top cover film embeds a top reference ground layer for a microstrip line region; the bottom cover film embeds a bottom ground layer for the microstrip line region; the top reference ground layer for the microstrip line region includes: a microstrip line, a first coplanar waveguide line, a second coplanar waveguide line, an edge reference ground line for the coplanar waveguide region, and a middle reference ground line for the coplanar waveguide region; the edge reference ground line for the coplanar waveguide region is located on both sides of the top cover film; the differential line of the microstrip line region, the first coplanar waveguide line, and the second coplanar waveguide line are located between the edge reference ground line for the coplanar waveguide region; the differential line of the microstrip line region is located at both ends of the top cover film and is divided into two along the middle direction of the top cover film to form the first coplanar waveguide line and the second coplanar waveguide line; transition ground holes are provided at both ends of the middle reference ground line for the coplanar waveguide region. The coplanar waveguide structure of this invention can enhance inter-line coupling.

The present disclosure relates to the technical field of semiconductor manufacturing, and particularly relates to a packaging substrate and a preparation method thereof. The packaging substrate comprises a substrate and two isolated rings; the substrate comprises a bonding surface and a bottom surface; the two isolated rings extend along the direction perpendicular to the substrate and penetrate the bonding surface and the bottom surface, and define a movable cavity in the middle of the bonding surface with a top surface lower than the bonding surface, and a movable cavity ring surrounding the two isolated rings; the bonding surface around the movable cavity ring comprises a bonding ring; between the top of any isolated ring and the bonding surface surrounding the isolated ring, an anti-overflow isolation groove ring is provided for isolation; the bonding surface around the anti-overflow isolation groove ring comprises a solder pad; adjacent anti-overflow isolation groove rings are connected through the movable cavity in the middle. At least one packaging substrate with excellent electrical isolation performance and good thermal matching can be provided, and the signal crosstalk caused by excessive parasitic capacitance can be avoided while realizing the vertical interconnection of multiple independent signals.

The application discloses a display module, comprising: a display area and a non-display area, and the non-display area comprises a visible area and a light shielding area, and the visible area is located between the display area and the light shielding area; wherein the display module comprises a plurality of first wires arranged at intervals, the first wire comprises a first part located in the visible area, a plurality of first hollow areas are arranged on the first part, and a first gap between at least part of two adjacent first parts extends in a snake shape. In the above manner, the application can reduce the probability of exposure of the first wire from the visible area and improve the user visual effect.