288 results about "External cavity" patented technology

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

The invention relates to the technical field of lasers, in particular to a multi-chip vertical external cavity surface emitting laser which comprises a chip set, a first prism, a second prism and an output coupling mirror which are sequentially arranged along a preset central axis. The chipset comprises N gain chips, and the N gain chips output N sub light beams; the N sub-beams pass through the first prism, the sub-beams emitted from the first prism converge towards a preset central axis, the sub-beams are incident to the second prism before convergence and are combined into a resonant beam through the second prism, the resonant beam resonates in a resonant cavity formed by the output coupling mirror and the chip set, and the output coupling mirror and the chip set form a resonant cavity; the output laser is emitted from the output coupling mirror; wherein N is greater than 1. The invention is beneficial for solving the problems that the power of a single chip is limited, the beam combining efficiency is low, only incoherent beam combining can be realized, and a multi-chip beam combining structure is complex.

The invention belongs to the technical field of optical communication, and particularly relates to a narrow linewidth laser based on a cascaded micro-ring resonant cavity. The laser comprises a semiconductor laser inner cavity module, a gain chip module, a phase shifter, a cascade micro-ring resonant cavity module, a thermal tuning module and an outer cavity reflector. The gain chip is combined with an III-V group material at the top of the silicon waveguide through heterogeneous integration, and adopts an InAlGaAs quantum well to provide high gain; the phase shifter is used for matching the lasing wavelength with the resonant wavelength; the cascaded micro-ring resonant cavity is formed by cascading three micro-rings, and tuning of the laser is realized based on a vernier effect; the thermal tuning module is composed of three semi-annular metal strips and a straight waveguide-shaped metal strip. The outer cavity reflector module adopts a Sagnac ring structure; the laser inner cavity, the gain chip, the cascade micro-ring resonant cavity and the outer cavity reflector are directly connected through silicon waveguides. The laser has the characteristics of narrow linewidth and wide tuning range, is easy to highly integrate and interconnect, and has important application value.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on two different gratings and a metal grating with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, an optical waveguide, an annular resonant optical waveguide and a metal BRAGG reflecting grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is abandoned, a top metal grating is adopted, a traditional DFB sandwich type secondary epitaxy manufacturing process is greatly simplified and avoided, the production cost is reduced, particularly, the metal grating is divided into two parts with similar but different grating constants, and the phase positions of the two gratings are pulled by lambda / 2, so that the performance of the DFB is improved. According to the design, the side mode rejection ratio (SMSR) of laser beams can be effectively improved, the laser line width is compressed, a guarantee is provided for stable work of the laser in a high-performance application scene, and the grating reflection efficiency is effectively improved by combining a'mouth-to-mouth 'coupling butt joint mode of the gain chip and the optical waveguide substrate.

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on a bimetallic Bragg grating and a top surface HR reflecting film, which comprises a gain chip, a first high-reflection HR film is plated on the left end surface of the gain chip, and a first anti-reflection AR film is plated on the right end surface of the gain chip. A metal Bragg grating waveguide is arranged on the right side of the gain chip, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. Performance test is carried out on the laser provided by the invention, and test results show that the line width is 0.6 kHz, the SMSR is 63dB, and the threshold current is 22mA, thereby verifying the effectiveness of the laser provided by the invention.

The invention relates to a multi-path high-stability narrow-linewidth external cavity semiconductor laser and application thereof, and belongs to the technical field of lasers. The laser comprises two groups of external cavity light paths, Z-block beam combiners, partial reflectors and isolators, the two groups of external cavity light paths are arranged side by side, and the Z-block beam combiners, the partial reflectors and the isolators are sequentially arranged on the light emitting sides of the two groups of external cavity light paths; the external cavity optical path comprises a gain chip, a collimating lens, a polarization analyzer A, a polarization beam splitter, an F-P etalon and a narrow-band-pass filter which are sequentially arranged along the optical path. The polarization analyzer and the polarization beam splitter are arranged in the external cavity light path, main polarized light is kept to resonate in the external cavity light path, the polarization suppression ratio of the external cavity light path is improved, non-dominant mode noise is suppressed, and the line width is reduced; the mode jump risk is reduced, the device life is prolonged, and the power stability is improved; the beam quality is improved; and the polarization dependent loss in a light path is reduced.

The invention provides a high-power external cavity tunable quantum cascade laser output module. The high-power external cavity tunable quantum cascade laser output module comprises a first lens, a first half-wave plate and a first mid-infrared grid polaroid which are sequentially arranged along a light path of a first laser; a second lens, a second half-wave plate, a second mid-infrared grid polarizer and a third half-wave plate are sequentially arranged along the light path of the second laser; emergent light of the first mid-infrared grid polaroid and the third half-wave plate is converged on different surfaces of the third mid-infrared grid polaroid, the first blazed grating is arranged on a reflection light path of the first mid-infrared grid polaroid, and the second blazed grating is arranged on a reflection light path of the second mid-infrared grid polaroid. According to the invention, the problems of wavelength locking and low polarization beam combination efficiency caused by insufficient polarization state of the quantum cascade laser can be effectively solved, narrow linewidth output and wavelength tuning of the quantum cascade laser can be realized, and even high-power dual-wavelength tunable output can be realized through polarization beam combination structure expansion.

The invention provides a broadband linear frequency modulation microwave source based on ultra-short external cavity modulation light feedback, and relates to the field of microwave photonics. Continuous light generated by the main semiconductor laser is injected into the slave laser after being adjusted, so that the slave laser works in a periodic oscillation state; the slave laser, the electro-absorption modulator and the reflector are integrated to form an ultra-short outer cavity, and the intensity of feedback light is regulated and controlled by an external signal source so as to realize linear scanning of cavity mode frequency. After beam splitting of light output from the laser, one path forms a long external cavity feedback stable signal through the adjustable optical fiber delay line, and the other path outputs a target signal after beat frequency of the photoelectric detector and filtering of the band-pass filter. A high-speed modulator and a high-frequency microwave source are not needed, the broadband advantage of a photonics scheme is reserved, the frequency sweeping bandwidth is further improved to 60 GHz or above, the center frequency and the frequency sweeping range are independently adjustable, the structure is simple, cost is low, integration is easy, and the device is suitable for scenes such as photoelectric radars.

The invention discloses a multi-channel switching self-stabilization type constant-temperature water filtering device and a method thereof.The constant-temperature water filtering device comprises a sealed container, the sealed container comprises at least two independent inner cavities and an outer cavity used for wrapping the inner cavities, the inner cavities are made of high-heat-conduction materials with high heat conduction performance, and the outer cavity is made of high-heat-conduction materials with high heat conduction performance; each inner cavity and each outer cavity are respectively connected with an input pipeline for cooling liquid to enter and an output pipeline for discharging the liquid out of the outer cavity, control valves are arranged on the input pipelines and the output pipelines, and the cooling liquid is driven to sequentially flow through different inner cavities after flowing through the outer cavities by switching the opening and closing states of the control valves. When the cooling liquid flows through the inner cavity, the cooling liquid in the inner cavity exchanges heat with the cooling liquid in the outer cavity through the high-heat-conductivity material to offset random disturbance of the temperature of the cooling liquid input into the inner cavity through the input pipeline.

The invention relates to the field of semiconductor lasers, in particular to a high-power narrow-linewidth hybrid integrated laser, which comprises a wide waveguide laser gain chip and a silicon-based external cavity photon chip, and is characterized in that the silicon-based external cavity photon chip comprises a tip multi-section edge coupler, a bus waveguide, at least three cascaded micro-ring resonators and a feedback assembly; the tip multi-section edge coupler comprises a tip waveguide array and a conical combined waveguide, the tip waveguide array is composed of inverted conical waveguides arranged side by side, and the width of the input end face of each inverted conical waveguide is smaller than that of the output end face of each inverted conical waveguide; and the width of the conical combined waveguide is gradually reduced from the input end to the output end. The invention solves the industrial problem that high power and narrow linewidth are difficult to consider in the hybrid integrated laser, has the advantages of high output power, extremely narrow linewidth, wide tuning range, high coupling efficiency, good process tolerance, high integration level and the like, and provides a high-performance light source for the next generation of coherent optical communication, laser radar and precision measurement system.

This invention discloses a Littrow-type cavity length-compensated mode-hopping-free continuously tunable semiconductor laser, comprising a laser diode (1), a collimating lens (2), and a diffraction grating (3). Mode-hopping-free continuous tunability is achieved through a micro-elastic material base (4). The micro-elastic material base (4) is hollowed out to create a movable block (401) that can be driven by a piezoelectric ceramic (5), an isosceles triangular groove (404), and a pair of waist arms (406), enabling micro-displacement and micro-angle changes in the waist arms (406), thereby achieving continuous tunability of the output laser. This invention achieves mode-hopping-free continuous tunability of the laser output through an innovative combination of a special mechanical structure and the frequency selection characteristics of the grating. The structure is compact and highly stable, ultimately resulting in a mode-hopping-free continuously tunable external cavity semiconductor laser that meets the requirements of high-end precision measurement.

The application discloses a kind of parallel coupling self-imaging external cavity coherent array semiconductor laser, comprising: semiconductor laser chip array, light transmission dielectric layer and external cavity reflection layer;Semiconductor laser chip array includes multiple light emitting units, light transmission dielectric layer and external cavity reflection layer form laser self-imaging external cavity;The non-light emitting area of semiconductor laser chip array light emitting surface is coated with high reflection film, and the feedback light that cannot be injected into the light emitting unit due to incomplete self-imaging at the edge of semiconductor laser chip array can oscillate in self-imaging external cavity multiple times to reform the self-imaging that can be completely injected into the light emitting unit.The application improves the injection of laser outside the light emitting area, can efficiently parallel coupling all light emitting units including edge in chip array, eliminate the edge effect of chip array generated by self-imaging external cavity feedback, enhance the feedback efficiency of self-imaging external cavity, obtain the coherent array laser output of high parallel coupling efficiency, high efficiency optical mutual injection.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on two different gratings and a metal grating with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, an optical waveguide, an annular resonant optical waveguide and a metal BRAGG reflecting grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is abandoned, a top metal grating is adopted, a traditional DFB sandwich type secondary epitaxy manufacturing process is greatly simplified and avoided, the production cost is reduced, particularly, the metal grating is divided into two parts with similar but different grating constants, and the phase positions of the two gratings are pulled by lambda / 2, so that the performance of the DFB is improved. According to the design, the side mode rejection ratio (SMSR) of laser beams can be effectively improved, the laser line width is compressed, a guarantee is provided for stable work of the laser in a high-performance application scene, and the grating reflection efficiency is effectively improved by combining a'mouth-to-mouth 'coupling butt joint mode of the gain chip and the optical waveguide substrate.

The invention discloses an optical fiber laser external cavity spectrum synthesis crosstalk elimination method, which relates to the technical field of laser, and comprises the following four steps of: firstly, designing and constructing a spectrum synthesis system model by taking a reflection-type volume Bragg grating (R-VBG) as a beam combiner, and blocking a crosstalk path through R-VBG wavelength selective transmission and diffraction and grid line vertical design; calculating an optimal grating parameter by combining R-VBG loss and diffraction efficiency correlation and multi-parameter internal relation; a steady-state rate equation is deduced based on a three-energy-level system, and a pumping threshold power change rule and an output characteristic expression are obtained; and finally analyzing the influence of light beam characteristics and thermal deformation on diffraction efficiency, determining a threshold value and controlling temperature, and verifying the system performance through experiments. The method can fundamentally eliminate crosstalk, guarantee the quality of the light beam, balance the cost and loss, adapt to a multi-channel scene, and have a remarkable application value in a multi-field high-power fiber laser.

The application provides a sandwich micro-perforated plate sound absorption structure based on triple periodic minimal surface, comprising: a sandwich layer, comprising a plurality of triple periodic minimal surfaces arranged in an array in the XY direction; a plurality of sandwich layers arranged in an array in the Z direction, and a micro-perforated plate arranged between adjacent sandwich layers, wherein the micro-perforated plate is provided with a plurality of micro-holes; the inner cavities of the plurality of triple periodic minimal surfaces are connected in the XY direction and communicated in the Z direction through the micro-holes, thereby forming an inner cavity series connection system; and the outer cavities of the plurality of triple periodic minimal surfaces are connected in the XY direction and communicated in the Z direction through the micro-holes, thereby forming an outer cavity series connection system. The parallel structure of the inner cavity series connection system and the outer cavity series connection system is entangled and circled with each other, thereby effectively increasing the number of sound absorption peaks, so that the sound absorption effect of medium and low frequencies and wide frequencies is achieved. Meanwhile, the space utilization rate is high, and the structure weight is effectively reduced; and the structure volume can be changed according to the use requirement, and the compatibility is very strong.

We provide a cavity ring-down spectrometer that enables accurate measurement of extremely low-temperature samples. [Solution] The gas absorption spectrometer is a gas absorption spectrometer for measuring a sample gas and comprises a resonator 100A including at least two mirrors, a laser light source that emits laser light for irradiating the resonator 100A, and a photodetector for detecting the light extracted from the resonator. The resonator includes an inner chamber 1A that houses the mirrors 21 and 22 and forms a measurement space 15 into which the sample gas is introduced, an outer chamber 3A disposed outside the inner chamber 1A for vacuum insulation of the measurement space 15 from the outside, and a cooler 9 disposed within the outer chamber 3A, spaced apart from the inner chamber 1A, and having an internal space through which a refrigerant flows.

The invention provides a hybrid integrated semiconductor laser and a bandwidth increasing method, and relates to the field of optoelectronic devices. The hybrid integrated semiconductor laser comprises a semiconductor laser chip and a silicon nitride outer cavity chip, an optical feedback regulation and control structure is integrated in the silicon nitride outer cavity chip, active control over feedback light is achieved, photon-photon resonance and detuning loading effects are further introduced, and the modulation bandwidth of a directly modulated laser is cooperatively improved. The hybrid integrated semiconductor laser provided by the invention not only is simple in structure and high in preparation yield, but also can carry out secondary improvement on the bandwidth of a finished laser, and has the advantages of flexible regulation and control, easy integration and wide applicability.

This invention discloses a coaxial dual-cavity optical detection system, relating to the field of gas detection, which solves the problems of poor portability and low laser utilization in existing equipment. The system includes an air inlet, two coaxially arranged cavities with the inner cavity located inside the outer cavity, a vent, an outlet, a plano-concave mirror, and symmetrical window mirrors. The two cavities are interconnected through the vent, allowing for gas filling and exhaust with a single gas path. Coaxial parallel plano-concave mirrors are installed within the cavities, working in conjunction with an external reflector, convex lens, and detector to guide refracted light incident on the inner cavity into the outer cavity for utilization, forming a closed loop in the optical path of the two cavities. This system significantly reduces longitudinal and lateral dimensions, improving portability; simultaneous dual-cavity detection improves detection accuracy; the utilization of refracted light enhances laser utilization and sensing efficiency; and the increased effective optical path within a limited volume improves gas detection sensitivity, making it suitable for trace gas detection.

The invention discloses a high-performance optical comb laser based on heterogeneous material integration and multi-effect fusion, belongs to the technical field of optical communication and laser devices, and aims to solve the problems that a traditional optical comb laser is difficult to start tuning, low in power efficiency, large in line width or limited in bandwidth and the like. A scheme of heterogeneous integration of a III-V group gain material, a low-loss Si3N4 waveguide and a high-electro-optical coefficient barium titanate (BTO) material is adopted, an outer cavity chip comprises a high-Q-value annular resonant cavity, an electro-optical comb is generated by modulating the annular resonant cavity, then a Kerr comb is excited, and the optical comb is amplified through gain. According to the invention, three mechanisms of electro-optical modulation, Kerr effect and semiconductor light amplification are fused, and based on device topological structure innovation and unit device optimization, the problems are solved, the on-chip frequency comb performance is significantly improved, and the optical comb laser with excellent starting and tuning performance, high power, large bandwidth and narrow line width is realized.

A vertical cavity surface emitter (VCSEL) has a body comprising a vertical stack of stacked semiconductor layers, including: a current-limiting region enclosing a low-resistance current-flow region defined by a high-resistance current-flow region, and a first epitaxial sublayer located near the current-limiting region, wherein the first epitaxial sublayer includes a projection or recess defining a main cavity, and the remainder of the first epitaxial sublayer defines an outer cavity;wherein the projection or recess is defined by a physical step h which is predetermined according to the following equation: qλ0 - mλ1 = n0 h where λ0 is a resonant wavelength of the light in the main cavity, λ1 is a resonant wavelength of the light in the outer cavity, q is a positive half-integer, n0 is the effective refractive index in the main cavity, and m is a constant.;

A processing chamber includes a chamber body, a lid disposed over the chamber body, and one or more first laser devices disposed over the lid. The one or more first laser devices are configured to emit light having a wavelength of about 380 nm to about 600 nm. A first isolation plate is disposed within an internal volume that is at least partially defined by the chamber body. A semi-translucent layer is disposed over the first isolation plate. The semi-translucent layer configured to absorb at least part of the light emitted from the one or more first laser devices.

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

This invention provides a device and method for generating simultaneously emitted three wavelengths of laser light with equal spacing, relating to the field of laser technology. The device includes a pump source, a half-wave plate, an optical isolator, a focusing lens, an input mirror, a Raman crystal, an output mirror, a nonlinear crystal, and a dichroic mirror arranged sequentially along the optical path. The pump light, after its polarization direction is adjusted by the half-wave plate and the optical isolator, is focused onto the Raman crystal. Stimulated Raman scattering generates first and second Stokes beams, which are then converted to sum-frequency light by the sum-frequency effect of the nonlinear crystal. Finally, the dichroic mirror outputs three equally spaced wavelengths of laser light. This invention separates the Raman conversion and sum-frequency processes through an external cavity structure, achieving for the first time the simultaneous emission of three equally spaced wavelengths of laser light, offering advantages such as high output energy, equal wavelength spacing, and simultaneous emission of three wavelengths.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on a top surface HR layer and a planar metal grating and a preparation method, and the laser comprises a gain chip, an optical waveguide, the planar metal grating and a covering layer, the planar metal grating prepared by adopting an electronic evaporation plating process replaces traditional complex three-dimensional etching, so that the controllable precision and flatness of the grating structure are greatly improved, an InP secondary epitaxy process is abandoned, the whole process flow is simplified, the production cost is reduced, the product performance consistency and the product yield are improved, and the production cost is reduced. The reflection filtering efficiency is remarkably improved, the purity of the Bragg reflection spectrum is guaranteed, the narrow linewidth performance of the laser is achieved, the covering layer covers the plane metal grating, the problem that semiconductor secondary epitaxial lattices are not matched is effectively solved, diffraction light can be restrained, light energy overflow is reduced, and the freedom degree is increased through the design of the outer cavity structure.

The utility model provides a double-cavity structure and PEALD equipment thereof, and relates to the technical field of coating equipment. Comprising an outer cavity and an inner cavity mounted in the outer cavity; wherein the inner cavity is internally provided with a carrying table suitable for placing a wafer carrying disc; and the inner cavity is suitable for being connected with a reaction source so as to finish a coating process in the inner cavity. Through the scheme, the film thickness uniformity can be improved, the independence of a reaction region is realized, the precursor utilization rate is improved, and the maintenance process is simplified.

The utility model discloses PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, and belongs to the field of photovoltaic technology. The PECVD equipment comprises a base, a first electrode, a second electrode and a third electrode, wherein the base forms an outer cavity; the multiple cooling devices are vertically stacked and installed in the outer cavity, each cooling device comprises a supporting piece and a cooling tower installed on the supporting piece, and every two adjacent cooling towers are connected in a matched mode through the corresponding two sets of supporting pieces in the vertical direction; and the guide piece is installed in the outer cavity and forms a guide groove, the extending direction of the guide groove is parallel to the stacking direction of the multiple cooling devices, and the supporting piece is in sliding fit with the guide groove. Through the arrangement of the guide piece, the butt joint deviation caused by space limitation is obviously reduced, the hoisting precision and stability are improved, the free movement of the cooling device in the hoisting process is limited, and the shaking of the inner cavity in the hoisting process is reduced, so that the collision damage of internal parts of the inner cavity in the hoisting process is reduced.

The invention relates to the technical field of laser, in particular to a compact spectrum beam combining device which comprises a laser unit, a reflection type conversion mirror, a reflection type diffraction grating, a light path compression assembly and an outer cavity mirror. The optical path compression assembly comprises at least one waveguide structure; in a light path in the spectral beam combining direction, the laser units are distributed on the two sides of an optical axis, and the reflective diffraction grating and the external cavity mirror are both arranged at the optical axis. In a light path in the non-spectral beam combination direction, the position of the laser unit coincides with the position of the reflective diffraction grating; an inclined angle delta theta is formed between the reflective diffraction grating and the optical axis, and the inclined angle delta theta does not exceed 5 degrees; by introducing the optical path compression assembly, the reflection type conversion lens and the reflection type diffraction grating, multiplexing reflection and diffraction are achieved, light passes through the optical path compression assembly four times, the physical size of the whole spectrum beam combining structure is greatly reduced under the condition that the optical path is not changed, and a technical approach is provided for achieving a compact, high-power and high-beam-quality laser.

The invention discloses a double-cavity current indicator which comprises a shell, a piston shaft assembly, a valve assembly, a display film and a shielding film. The shell is provided with a transparent cover and forms a display cavity, the display film is arranged in the display cavity and divides the display cavity into an outer cavity and an inner cavity, the inner cavity is located on the inner side of the display film, and the outer cavity is located on the outer side of the display film; the shielding film is located in the outer cavity and covers the outer side of the display film; the side, close to the air inlet cavity, of the piston cavity communicates with an inner cavity of the display film through a first air channel. The air outlet cavity communicates with the part, located on the outer side of the shielding film, in the outer cavity through a second air channel; the middle part of the shielding film is crossed and divided into a plurality of petal bodies; the display film is of a thin-wall cavity structure, the peripheral wall of the display film is composed of multiple layers of conical folding walls, and the display film is provided with a top wall. The liquid crystal display device has the advantages that the display film is sensitive to differential pressure and fast in response, and display is more obvious due to the design of the shielding film, the display film and the second air channel.

The present invention discloses a non-local particle damping rotating superstructure wide low-frequency vibration reduction device, comprising a mechanical superstructure and an external cavity; the mechanical superstructure is composed of a plurality of unit cell structures periodically arranged in an XY plane, and the unit cell structure is composed of a non-local connection structure, a matrix damping structure, a connection damping structure and a rod; the matrix damping structure is composed of a particle damping group, a baffle, a partition and a matrix damping cavity; the connection damping structure is composed of a particle damping group, a baffle, a partition and a connection damping cavity; the non-local connection structure is composed of a particle damping group, a partition, a baffle and a non-local cavity; a plurality of layers of particle damping groups are arranged in the matrix damping cavity, the connection damping cavity and the non-local cavity, partitions are provided between each layer of particle damping groups, and baffles are detachably installed in each cavity; the external cavity and the mechanical superstructure are connected to each other by a rotating connection rod, and the bottom of the non-local connection structure in the mechanical superstructure is in a suspended state.

The invention discloses a graphene strain structure and a preparation method and application thereof. The structure comprises a structure substrate layer, a step cavity array, a graphene absorption layer, a flexible strain layer, a dielectric layer and a lower electrode layer. The step cavity array comprises a plurality of step cavities arranged on the structure substrate layer, each step cavity sequentially comprises an outer cavity and an inner cavity from an opening to the inside, a step surface is formed between the outer cavity and the inner cavity, and the transverse size of the outer cavity is larger than that of the inner cavity; the graphene absorption layer is arranged on the step surface of each step cavity; the flexible strain layer is attached to the outside of the step cavity array and seals the opening of each step cavity, and a film side electrode layer is deposited on one side, back to the step cavities, of the flexible strain layer; the flexible strain layer and the lower electrode layer are separated and fixed by the dielectric layer, so that the film side electrode layer and the lower electrode layer form a capacitor; the invention also discloses a preparation method of the graphene strain structure. The device is suitable for wide-spectrum electromagnetic energy detection and conversion, and is easy for large-area integration and large-scale manufacturing.