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76 results about "Lasing threshold" patented technology

The lasing threshold is the lowest excitation level at which a laser's output is dominated by stimulated emission rather than by spontaneous emission. Below the threshold, the laser's output power rises slowly with increasing excitation. Above threshold, the slope of power vs. excitation is orders of magnitude greater. The linewidth of the laser's emission also becomes orders of magnitude smaller above the threshold than it is below. Above the threshold, the laser is said to be lasing. The term "lasing" is a back formation from "laser," which is an acronym, not an agent noun.

Wavelength tunable laser

A wavelength tunable laser comprising a laser diode and a closed external cavity formed by one or more optical resonators either horizontally or vertically coupled to adjacent waveguides. The optical resonator primarily functions as a wavelength selector and may be in the form of disk, ring or other closed cavity geometries. The emission from one end of the laser diode is coupled into the first waveguide using optical lens or butt-joint method and transferred to the second waveguide through evanescent coupling between the waveguides and optical resonator. A mirror system or high reflection coating at the end of the second waveguide reflects the light backwards into the system resulting in a closed optical cavity. Lasing can be achieved when the optical gain overcomes the optical loss in this closed cavity for a certain resonance wavelength which is tunable by changing the resonance condition of the optical resonator through reversed biased voltage or current injection. Multiple optical resonators may be used to reduce the lasing threshold and provide higher power output. With monolithic integration, more optical devices can be integrated with the tunable laser into the same substrate to produce optical devices that are capable of more complex functions, such as tunable transmitters or waveguide buses.
Owner:MIND FUSION LLC +1

Wavelength tunable laser

InactiveUS20050025199A1Increase speedMechanically simple, scaleable and reliableLaser detailsLaser optical resonator constructionResonance wavelengthWaveguide
A wavelength tunable laser comprising a laser diode and a closed external cavity formed by one or more optical resonators either horizontally or vertically coupled to adjacent waveguides. The optical resonator primarily functions as a wavelength selector and may be in the form of disk, ring or other closed cavity geometries. The emission from one end of the laser diode is coupled into the first waveguide using optical lens or butt-joint method and transferred to the second waveguide through evanescent coupling between the waveguides and optical resonator. A mirror system or high reflection coating at the end of the second waveguide reflects the light backwards into the system resulting in a closed optical cavity. Lasing can be achieved when the optical gain overcomes the optical loss in this closed cavity for a certain resonance wavelength which is tunable by changing the resonance condition of the optical resonator through reversed biased voltage or current injection. Multiple optical resonators may be used to reduce the lasing threshold and provide higher power output. With monolithic integration, more optical devices can be integrated with the tunable laser into the same substrate to produce optical devices that are capable of more complex functions, such as tunable transmitters or waveguide buses.
Owner:PETRIE DATA CO +2

Holmium doped 2.1 micron crystal laser

ActiveUS20060146901A1Less-detrimental heatLess conversionActive medium materialOptoelectronicsUp conversion
A Ho:YAG crystal laser is disclosed which is doped with less than 2% holmium to reduce the lasing threshold and up-conversion, thereby increasing the operating efficiency of the laser. The laser does not need sensitizer ions so energy mismatches introduced by the sensitizer ions ale eliminated to the thereby increase the efficiency of the laser while minimizing detrimental thermal loading in the laser caused by up-conversion loss processes. The Ho:YAG crystal laser is directly pumped by a Thulium fiber laser at 1.9 μm at the holmium 5I7 to 5I8 transition to produce an output at 2.1 μm yielding a very low quantum defect. The laser is embodied as a thulium fiber laser pumped oscillator or an amplifier.
Owner:BAE SYST INFORMATION & ELECTRONICS SYST INTERGRATION INC

Q-modulated semiconductor laser with electro-absorptive grating structures

A Q-modulated semiconductor laser comprises a λ / 4-phase-shifted distributed-feedback grating. Two isolated electrodes are deposited on top of the grating, and one electrode is deposited on the back side of the laser substrate as a common ground. The first top-side electrode covers a portion of the grating including the phase-shift region, and provides an optical gain for the laser when a constant current is injected. The second top-side electrode covers the remaining portion of the grating away from the phase-shift region, which acts as a Q-modulator of the laser. An electrical signal is applied on the second electrode to change the absorption coefficient of the waveguide in the modulator section, resulting in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.
Owner:LIGHTIP TECH

Method and device for generating a laser beam, a laser treatment device and a laser detection device

The invention relates to a laser device, comprising a laser material (1) brought into a simmer mode. A controllable source (7, 17) of additional energy (16, 20) supplies energy to the laser material (1), such that in only a desired part of the laser material (1) a lasing threshold is exceeded, and a laser beam (10) is emitted from only a desired part of the laser surface. This device makes possible to provide a laser beam in just the desired part of the laser, which allows a flexible and localized output. The invention further relates to a hair-removing device comprising a laser device according to the invention and further comprising an optical system (6) for focusing the laser beam pulses on a focal spot (12) and for positioning the focal spot in a target position, wherein the optical system (6) comprises a movable lens or a plurality of individually addressable lenses.
Owner:KONINKLIJKE PHILIPS ELECTRONICS NV

Wavelength control of a dual-ring laser

An optical source includes a semiconductor optical amplifier that provides an optical signal, and a photonic chip with first and second ring resonators that operate as Vernier rings. When the optical source is operated below a lasing threshold, one or more thermal-tuning mechanisms, which may be thermally coupled to the first ring resonator and / or the second ring resonator, may be adjusted to align resonances of the first ring resonator and the second ring resonator based on measured optical power on a shared optical waveguide that is optically coupled to the first and second ring resonators. Then, when the optical source is operated above the lasing threshold, a common thermal-tuning mechanism may be adjusted to lock the aligned resonances with an optical cavity mode of the optical source based on a measured optical power on an optical waveguide that is optically coupled to the first ring resonator.
Owner:ORACLE INT CORP

Silica-based germanium electrical injection laser and production method thereof

The invention relates to a silica-based germanium electrical injection laser and a production method thereof. An active layer of the laser forms a p-i-n structure on the basis of an extension germanium-based single crystalline layer on a monocrystal line silicon. A first limiting layer is positioned at the upper part of the active layer, and a second limiting layer is positioned at the lower part of the active layer. Under the injection of large electric current, when the injected electric current is larger than or equal to a laser ejection threshold, the laser utilizes Auger effect and a laser resonant cavity to form positive feedback to adjust the electronic condensation proportion of a germanium L conduction band valley and a germanium inverse-L conduction band valley so as to realize the higher electronic condensation of the germanium inverse-L conduction band valley, therefore, the silica-based germanium electrical injection laser which realizes high efficiency and low working current density and is based on germanium direct bandgap near infrared (-1.55 microns) light emission is achieved.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Elliptic ring microcavity laser with high-resistance area

The invention belongs to the technical field of semiconductor lasers, discloses an elliptic ring microcavity laser with a high-resistance area, and aims to solve the problems that existing elliptic plate microcavity lasers are high in laser emission threshold, low in electro-optical conversion efficiency, high in temperature rise and low in light output power and existing elliptic ring microcavity semiconductor lasers are low in yield and difficult in realization of high light output power. The elliptic ring microcavity laser with the high-resistance area comprises an upper electrode, an upper waveguide layer, an active gain layer, a lower waveguide layer, a substrate and a lower electrode sequentially from top to bottom. The lower electrode is welded onto a copper heat sink, the upper electrode, the upper waveguide layer, the active gain layer and the lower waveguide layer are shaped in elliptic plates, and one end of an ellipse minor axis at the outer boundary of the active gain layer is provided with a semi-elliptic cut. The elliptic ring microcavity laser is characterized in that a central area of the upper waveguide layer is the high-resistance area, and the high-resistance area is formed by means of photomask and protonation before the upper electrode is made on the upper waveguide layer.
Owner:CHANGCHUN UNIV OF SCI & TECH
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