Two section blue laser diode with reduced output power droop

a laser diode and output power technology, applied in the field of blue laser diodes, can solve the problems of thermal fluctuations, particularly deleterious to maintaining constant optical power output, and the drop in the light output of algainn laser diodes, so as to reduce transient heating and reduce power consumption , the effect of light output drooping

Inactive Publication Date: 2008-04-08
PALO ALTO RES CENT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0020]According to the present invention, an III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.

Problems solved by technology

When a laser device is switched from the OFF to the ON state, transient heating, or heating that changes over time, can cause the light output of AlGaInN laser diodes to drop significantly.
This increased temperature results in a decreased output power for the AlGaInN laser diode.
Thermal fluctuations are especially deleterious to maintaining constant optical power output, especially during pulsed modulation.
This sustained temperature increase results in a further decrease in the output pulse obtained with a constant level of input current.
Due to the poor thermal conductivity of the sapphire substrate and the relatively high electric power consumption of III-nitride baser laser devices, transient heating is an issue to AlGaInN devices.

Method used

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  • Two section blue laser diode with reduced output power droop
  • Two section blue laser diode with reduced output power droop
  • Two section blue laser diode with reduced output power droop

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Embodiment Construction

[0036]In the following detailed description, numeric ranges are provided for various aspects of the embodiments described. These recited ranges are to be treated as examples only, and are not intended to limit the scope of the claims hereof. In addition, a number of materials are identified as suitable for various facets of the embodiments. These recited materials are to be treated as exemplary, and are not intended to limit the scope of the claims hereof.

[0037]Reference is now made to FIG. 3 wherein is described the basic two section III-V nitride based semiconductor alloy diode laser 100 of the present invention. The semiconductor laser structure 100 has a C-face (0001) or A-face (1120) oriented sapphire (Al2O3) substrate 102 on which a succession of semiconductor layers is epitaxially deposited. The laser structure 100 includes a thin buffer layer 103, also known as a nucleation layer, formed on the sapphire substrate 102. The buffer layer 103 acts primarily as a wetting layer, t...

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Abstract

A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.

Description

BACKGROUND OF THE INVENTION[0001]The present invention relates to a blue laser diode and, more particularly, to a two section blue laser diode with an amplifier region and a modulator region to reduce power output variations.[0002]Solid state lasers, also referred to as semiconductor lasers or laser diodes, are well known in the art. These devices generally consist of a planar multi-layered semiconductor structure having one or more active semiconductor layers bounded at their ends by cleaved surfaces that act as mirrors. The semiconductor layers on one side of the active layer in the structure are doped with impurities so as to have an excess of mobile electrons. The semiconductor layers on the other side of the active layer in the structure are doped with impurities so as to have a deficiency of mobile electrons, therefore creating an excess of positively charged carriers called holes. Layers with excess electrons are said to be n-type, i.e. negative, while layers with excess hole...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01S5/026H01S5/323H01S5/343
CPCB82Y20/00H01S5/0265H01S5/34333H01S5/0287H01S5/0625H01S5/06251
Inventor KNEISSI, MICHAELPAOLI, THOMAS L.
Owner PALO ALTO RES CENT INC
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