124 results about "Forward current" patented technology

The invention discloses a micro-copper pillar bump interconnection resistor electromigration degradation prediction method. The method comprises the following steps: obtaining the net flux of Cu atoms in a Cu6Sn5 layer and a Cu3Sn layer and the net flux of Ni atoms in a Ni-Cu-Sn compound layer under forward current and reverse current; establishing a relationship between the net flux of Ni atoms and the thickness change of the Ni-Cu-Sn compound layer and a relationship between the net flux of Cu atoms and the thickness change of the Cu6Sn5 layer and the Cu3Sn layer; establishing a thickness polarity growth model of the Ni-Cu-Sn compound, the Cu6Sn5 layer and the Cu3Sn layer; establishing a thickness polarity consumption model of the Cu bonding pad, the Sn solder and the Ni layer; and establishing a resistance electromigration degradation model of micro-copper pillar bump interconnection. According to the method, the electromigration degradation prediction of the interconnection resistor of the copper pillar bump plated with the Ni layer can be realized, and a large amount of service life and time and economic cost generated by a failure analysis test are greatly reduced or avoided.

The invention discloses a method for measuring and analyzing residual magnetism characteristics of an iron core. According to the method, a to-be-detected iron core is demagnetized, preset residual magnetism is set, direct-current voltage excitation with opposite polarities, the same amplitude and the same duration is applied to a primary winding of the to-be-detected iron core, and transient current response signals are synchronously collected; two groups of current under positive / negative polarity excitation are extracted, and the residual magnetism direction is judged by comparing the change rate of the current; a curve of equivalent resistance changing along with time is calculated based on forward current and voltage, a resistance value corresponding to a characteristic inflection point moment is selected, the resistance value is substituted into a pre-established residual magnetism-equivalent resistance empirical formula to deduce the magnitude of residual magnetism, and a matched iron core residual magnetism detection and demagnetization integrated system integrates information management, residual magnetism detection, demagnetization and display modules. And closed-loop automation of detection, analysis and demagnetization is realized. According to the method, a magnetic field sensor is not needed, the residual magnetism direction and size can be synchronously obtained in a high-precision and robust mode only through port electric signals, and the method is suitable for on-site off-line or live detection.

A non-isolated bidirectional high-voltage direct current battery charger is made compatible with a ground-fault circuit interrupter (GFCI) at the DC output by adapting the power converter to control, in response to voltage or current sensors, a net current difference between forward current and return current to remain below a threshold of the GFCI. This can be done without compromising safety in the case of actual ground faults.

A temperature sensor device is capable of measuring minute temperature changes while being manufactured at low cost without needing a high performance IC tester. A temperature sensor device includes a temperature sensor circuit 2 and a temperature sensor 1. The temperature sensor 1 includes a PN junction element 15 which is a temperature sensing element, a variable current source which supplies different forward currents of at least two values to the PN junction element 15 and a constant voltage source 16 which outputs a constant voltage having the same temperature properties as a forward voltage of the PN junction element 15.

The application discloses a relay, and belongs to the technical field of electric appliance switches. The relay comprises a first shell, an electromagnetic structure, a moving contact structure and a stationary contact. The electromagnetic structure and the stationary contact are both fixed in the first shell. The electromagnetic structure is provided with two first magnetic parts which are spaced apart along a first direction. The moving contact structure is slidably arranged in the first shell along a second direction. The moving contact structure comprises a moving contact, a first moving magnetic part and a second moving magnetic part which are sequentially and spaced apart along the second direction. The magnetic poles of the first moving magnetic part and the second moving magnetic part are opposite. When a forward current is input into the electromagnetic structure, the two first magnetic parts are both attracted to the first moving magnetic part, and the moving contact and the stationary contact are separated. When a reverse current is input into the electromagnetic structure, the two first magnetic parts are both attracted to the second moving magnetic part, and the moving contact and the stationary contact are in contact. The relay provided by the application is beneficial to increasing the opening distance between the moving contact and the stationary contact, and reducing the risk of electric leakage from the moving contact and the stationary contact to the electromagnetic structure.

The utility model relates to the technical field of medical equipment, and particularly discloses a bipolar nanosecond pulse synchronous output circuit and ablation equipment, which comprise a positive pulse output circuit and a negative pulse output circuit, the positive pulse output circuit comprises a positive pulse charging unit, a positive pulse output control unit, a positive pulse transmission unit and a positive pulse output electrode wire which are electrically connected in sequence; the negative pulse output circuit comprises a negative pulse charging unit, a negative pulse output control unit, a negative pulse transmission unit and a negative pulse output electrode wire which are electrically connected in sequence; the positive pulse transmission unit at least comprises a forward multiplication transmission unit which is used for performing forward voltage multiplication or forward current multiplication on the forward output pulse signal; the negative pulse transmission unit at least comprises a negative multiplication transmission unit which is used for carrying out negative voltage multiplication or negative current multiplication on the negative output pulse signal. The bipolar nanosecond pulse synchronous output circuit provided by the utility model can improve instant pulse energy of nanosecond pulse tumor ablation equipment.

The invention relates to the technical field of solar photovoltaic modules, and particularly discloses a process method for passivating and contacting an auxiliary battery at a module end. The process method comprises the following steps: after battery pieces are subjected to series welding, lamination and packaging to form a battery assembly, the battery assembly is placed in an environment box for illumination, the temperature is set to be 50-75 DEG C, the irradiance is 1000-1500 Wh / m < 2 >, the forward current is 2-5 A, and illumination is carried out for 1-4 h. Under the conditions of high irradiance, medium temperature and low current, the battery piece adopting the LECO technology has a good internal defect repairing effect, contact between a metal electrode and silicon can be optimized again, the FF value and the Voc value of the battery assembly are improved, and therefore the power of the battery assembly is remarkably increased; and the contact resistance and passivation effect can be optimized at the component end in an auxiliary manner, so that the component power is improved, novel equipment does not need to be added on a production line, and the production efficiency is not influenced.

A moving core has a moving core main member made of soft magnetic materials and a permanent magnet member made of hard magnetic materials. A direction of the magnetic pole of the permanent magnet member matches that of a coil when the coil is positively energized with the forward current, and a stator core is non-existent in a range of movement of the permanent magnet member. Since there is the non-existent portion of the stator core in the range of movement of the permanent magnet member, it is possible to prevent generation of a magnetic flux loop of the magnetic field of the permanent magnet and it is possible to prevent a reduction of the attractive force.

The present application relates to the field of device fault diagnosis, and provides a device fault diagnosis method, system and equipment based on phase current and zero sequence voltage, comprising calculating phase current steady-state value and phase current fault transient value, and constructing single-phase open circuit fault flag; when the single-phase open circuit fault flag indicates that there is single-phase open circuit fault, obtaining fault phase flag quantity through phase current intensity coefficient; constructing first inverter fault flag through zero sequence voltage, when the first inverter fault flag indicates that there is fault, constructing second inverter fault flag through phase current unit value, obtaining inverter fault flag through the first inverter fault flag and the second inverter fault flag, determining device positioning threshold, constructing inverter fault positioning flag based on the device positioning threshold, positive current intensity and negative current intensity; obtaining final fault positioning flag, thereby diagnosing device fault of the device.

The application discloses a three-phase voltage source inverter, which comprises: inverter A, B and C three-phase upper and lower working bridge arms V a1 、 b1 、 c1 、 a2 、 b2 、 c2 , corresponding anti-association diodes VD a1 、 b1 、 c1 、 a2 、 b2 、 c2 , upper and lower bridge arm shunt switch devices S1 and S2, three-phase selective switch devices T a1 、 b1 、 c1 、 a2 、 b2 、 c2 in additional dynamic shunt branches; when the inverter AC side three-phase current has a phase with a maximum positive current, the T a2 、 b2 、 c2 corresponding to the additional dynamic shunt branch are turned on, and the S1 of the additional dynamic shunt branch is shunted in parallel to the phase with the maximum positive current; when a phase with a maximum reverse current exists, the T a1 、 b1 、 c1 corresponding to the additional dynamic shunt branch are turned on, and the S1 of the additional dynamic shunt branch is shunted in parallel to the phase with the maximum reverse current. The application reduces the overcurrent of the inverter working bridge arm switch device caused by AC system disturbance, and improves the operation reliability of the inverter.

The application discloses a low-cost heat-enhanced gallium nitride Schottky barrier diode and a preparation method thereof. The diode comprises a transmission layer, a drift layer arranged on the lower surface of the transmission layer, a positive electrode arranged on the middle area of the lower surface of the drift layer, a negative electrode arranged on the middle area of the upper surface of the transmission layer, a first dielectric layer arranged on the lower surface of the remaining drift layer and the sidewall and part of the lower surface of the positive electrode, a second dielectric layer arranged on the upper surface of the remaining transmission layer and the sidewall and part of the upper surface of the negative electrode, a part of a positive electrode thickening layer arranged on the lower surface of the first dielectric layer and the lower surface of the remaining negative electrode, another part of the positive electrode thickening layer exposed to the first dielectric layer, a heat dissipation substrate arranged on the lower surface of the positive electrode thickening layer and a negative electrode thickening layer arranged on the upper surface of part of the second dielectric layer and the upper surface of the remaining negative electrode. The application realizes a full-vertical gallium nitride Schottky barrier diode with greater forward current and higher heat dissipation capacity.

The invention relates to the technical field of IGBT (Insulated Gate Bipolar Translator) structures, and discloses a soft-recoverable IGBT structure, which comprises an MOS (Metal Oxide Semiconductor) gate structure positioned on the front surface of a device, a diode anode structure, an n drift layer for bearing the withstand voltage of the device, and a field stop layer positioned below the n drift layer and used for optimizing an internal electric field of the device, a gradually-doped n-type adjusting layer, an IGBT part, a diode part, a p-type collector region and an n-type cathode region are arranged between the n drift layer and the field stop layer, the IGBT part and the diode part are arranged in anti-parallel, the p-type collector region is located on the back surface of the device and serves as the IGBT part, and the n-type cathode region is located on the back surface of the device and serves as the diode part. By introducing the n-type adjusting layer, excellent soft recovery characteristic and dynamic robustness are realized, low overall loss is maintained, and the device has strong recovery capability under extreme conditions (high VCC, high forward current and high temperature). And the tradeoff and tradeoff triangular relationship limitation among the traditional total loss, reverse recovery softness and diode (FWD) recovery safety working area is broken through.

Examples described herein provide a method that includes, responsive to determining that a direction of a current relative to a power source of a vehicle is a forward current flowing out of the power source, determining whether the forward current exceeds a forward current threshold for a forward overcurrent detection time period by comparing the current to the forward current threshold. The method further includes, responsive to determining that the direction of the current relative to the power source is a reverse current flowing into the power source, determining whether the reverse current exceeds a reverse current threshold for a reverse overcurrent detection time period shorter than the forward overcurrent detection time period by comparing the current to the reverse current threshold. The method further includes controlling, using a gate driver, at least one switch associated with the power source to inhibit the current.

The examples described here provide a method which, in response to the determination that the direction of a current with respect to a vehicle power source is a forward current flowing out of the power source, includes determining whether the forward current exceeds a forward current threshold during a forward overcurrent detection period by comparing the current to the forward current threshold. The method further includes, in response to the determination that the direction of the current with respect to the power source is a reverse current flowing into the power source, determining whether the reverse current exceeds a reverse current threshold during a reverse overcurrent detection period that is shorter than the forward overcurrent detection period by comparing the current to the reverse current threshold.The method further includes controlling at least one switch associated with the power source using a gate driver to block the current.

The invention provides a method for extracting high-frequency characteristics of an indium-phosphorus heterojunction bipolar transistor (HBT). The method comprises the following steps: acquiring S parameter test data of InP HBTs with different sizes; extracting element parameters based on the test S parameters and the T-type small-signal equivalent circuit model of the InP HBT; obtaining a forward current gain and a unidirectional power gain under the radio frequency condition; constructing a frequency extraction model; obtaining a cut-off frequency and a maximum oscillation frequency; and constructing a geometric scalable model of the cut-off frequency and the maximum oscillation frequency based on the change rule of the cut-off frequency and the maximum oscillation frequency along with the size of the device. According to the invention, the method for extracting the cut-off frequency and the maximum oscillation frequency is defined by using the test S parameter; through testing under the multi-size and multi-bias condition, the effectiveness of the method is verified, the precision of the model is improved, and meanwhile, the time for extracting the cut-off frequency and the maximum oscillation frequency is greatly shortened.

The application provides a semiconductor structure and a forming method thereof. The semiconductor structure comprises: a substrate, the substrate comprising a first epitaxial layer and a second epitaxial layer on the first epitaxial layer; a deep well protection column, which is separated from the surface of the first epitaxial layer and extends into the first epitaxial layer and extends to below the second epitaxial layer in the width direction, and the thickness of the first epitaxial layer between the deep well protection column and the substrate is 6-12 μm; a well contact layer, which has the same doping type as the deep well protection column, extends into the deep well protection column from the surface of the deep well protection column and is surrounded by the sidewall and bottom of the deep well protection column; and a metal layer, which is located on the surface of the well contact layer and the sidewall and surface of the second epitaxial layer. The semiconductor structure and the forming method thereof can reduce the surface electric field of the device, increase the forward current and improve the reliability of the device.

A herein disclosed battery system 1 includes two kinds of contactors, i.e., a first contactor 40 and a second contactor 50. The first contactor 40 includes a first positive electrode terminal 42 connected to a positive electrode 11Ap of a battery unit 10, and includes a first negative electrode terminal 44 connected via a positive electrode output terminal 20 to an external load 100. In addition, the second contactor 50 includes a second positive electrode terminal 52 connected to a negative electrode 11Nn of the battery unit 10, and includes a second negative electrode terminal 54 connected via a negative electrode output terminal 30 to the external load 100. Then, the herein disclosed battery system 1 is configured to preferentially turn OFF the contactor, in which a forward electric current flows, during both of an electrical charge and an electrical discharge. Accordingly, the electric current can be safely and promptly interrupted, and thus it is possible to inhibit an malfunction due to welding of the contactor.

The invention relates to the technical field of semiconductor power devices, and discloses a method for optimizing a beta-Ga2O3 Schottky diode interface through hydrogen treatment, and the method comprises the steps: providing a beta-Ga2O3 Schottky diode, the beta-Ga2O3 Schottky diode comprises a beta-Ga2O3 semiconductor substrate, an n-type drift layer located on the beta-Ga2O3 semiconductor substrate, a Schottky anode located on the n-type drift layer and formed by stacking a nickel layer and a gold layer, and an edge terminal surrounding the Schottky anode. The beta-Ga2O3 Schottky diode is subjected to hydrogen treatment in a hydrogen-containing environment, so that hydrogen atoms are preferentially gathered and act on a contact interface of the nickel layer and the n-type drift layer, and the interface state of the interface is passivated. According to the invention, hydrogen treatment passivates interface defects, the Schottky barrier height and ideal factors can be reduced, the forward current density can be improved, and the on-resistance can be reduced, so that the overall electrical performance and energy conversion efficiency of the device can be improved.

A power converter having an integrated input bias self-supply function has an input switch, a controller, an output switch, and an output filter having an inductor. The controller includes control circuitry, a bias drive circuit, and a bias supply circuit. The bias supply circuit includes a bias transistor and a bias diode. The control circuitry and the bias drive circuit produce a bias drive signal indicative of the conductive states of the input and output switches. When the bias drive signal is asserted, the bias transistor is configured to be on and the bias diode is configured to be reverse biased and not conduct any forward current. When the bias drive signal is deasserted, the bias transistor is configured to be off.

Light-emitting device configured to emit radiation, comprising: a substrate (50); an epitaxic structure (20) comprising in succession a first DBR stack (21), a light-emitting stack (22), a second DBR stack (23) and several discrete first and second contact regions (241), wherein the light-emitting device emits coherent light having a far-field angle of less than 15 degrees, at a forward current between a laser threshold current and a saturation current therein, and incoherent light at a forward current less than the laser threshold current, wherein the epitaxial structure (20) is arranged on the substrate (50) and further comprises: several first radiation-emitting areas in a first column; and several second radiation-emitting areas in a second column; a conductive layer (60) on the epitaxial structure (20); wherein the contact areas (241) are arranged in a two-dimensional field and are configured to direct a spatially limited current in the light-emitting device to the several first radiation-emitting areas and the several second radiation-emitting areas; and wherein one of the several first contact areas includes a first latitude (w3') and one of the several second contact areas includes a second latitude (w3) that differs from the first latitude (w3').

The invention relates to the technical field of circuit devices, and particularly provides an amplifier based on double LDOs and a control method thereof, the amplifier comprises two LDOs and two OPAs; the input end of the LDO1 is connected with the VDD, the adjusting end of the LDO1 is connected with the output end of the OPA1, the output end of the LDO1 is connected with the output end Vout, and forward current is output; the input end of LDO2 is connected with the output end, the adjusting end of LDO2 is connected with the output end of OPA2, and the output end of LDO2 is connected with a compensation voltage end V4 to absorb negative current; the OPA1 is used for carrying out voltage following processing on the input Vset so as to transmit the Vset to the adjusting end of the LDO1 and the in-phase input end of the OPA2; the OPA2 is used for collecting the voltage difference value between the output end and the Vset and transmitting the voltage difference value to the adjusting end of the LDO2. Therefore, the problems of low universality, high cost and unstable manufacturing efficiency of an amplifier based on an integrated circuit in the prior art are solved.

The present application relates to a kind of high-voltage Schottky diode with vertical AlGaN / GaN heterojunction and its preparation method, the preparation method includes the following steps: one, epitaxial material growth;Two, re-growth groove production and re-growth;Three, cathode production;Four, dielectric layer growth;Five, anode production.It utilizes the 2DEG (two-dimensional electron gas) in vertical direction formed by re-growth, can significantly improve the forward current of diode;While utilizing the PN junction formed by re-growth, can uniformly disperse peak electric field, improve electric field concentration effect, improve breakdown voltage, and, when reverse, PN junction can be more effectively reduced reverse leakage than Schottky junction.

An ideal diode bridge controller is provided that includes gate drivers to connect to transistors of a bridge rectifier in which the transistors are arranged as high-side transistors and low-side transistors. The gate drivers alternately switch the transistors to cause the bridge rectifier to convert an input voltage of either of two polarities to an output voltage of one of the two polarities. The gate drivers include low-side gate drivers for the low-side transistors, and respective ones of the low-side gate drivers include linear drive circuitry and digital drive circuitry. The linear drive circuitry drives a respective low-side transistor to switch on and off based on forward current through the respective low-side transistor. The digital drive circuitry detects a reverse current through the respective low-side transistor, and causes the respective low-side transistor to switch off in response to the reverse current.

Disclosed herein is a camera module comprising: a circuit board; a frame coupled to the circuit board; an image sensor on the circuit board; a bobbin on the frame, a plurality of lenses being inside the bobbin; a coil wound on the bobbin, the bobbin moving to two directions based on a current applied to the coil; a magnet configured to interact the coil; and a yoke on the frame, the magnet being at an inner side of the yoke, wherein the bobbin moves to a first direction when a forward current is applied to the coil and to a second direction when a reverse current is applied to the coil.

The application discloses a micro-copper column bump interconnection resistance electromigration degradation prediction method, which comprises the following steps: obtaining Cu atom net flux in Cu6Sn5 layers and Cu3Sn layers and Ni atom net flux in Ni-Cu-Sn compound layers under forward current and under reverse current; establishing the relationship between the Ni atom net flux and the thickness change of the Ni-Cu-Sn compound layer and the relationship between the Cu atom net flux and the thickness change of the Cu6Sn5 layer and the Cu3Sn layer; establishing a thickness polarity growth model of the Ni-Cu-Sn compound, the Cu6Sn5 layer and the Cu3Sn layer; establishing a thickness polarity consumption model of a Cu pad, Sn solder and a Ni layer; and establishing a resistance electromigration degradation model of the micro-copper column bump interconnection. The application can realize the electromigration degradation prediction of the resistance of the copper column bump interconnection with a plated Ni layer, and greatly reduces or avoids the time and economic cost generated by a large number of life and failure analysis tests.

The application relates to a GaN-based diode designed by body heat dissipation and a preparation method thereof. ‑ The equivalent resistance of the GaN transmission layer is reduced, so that the forward current of the diode is improved; meanwhile, the heat-conducting material is filled between each conductive unit, so that the heat dissipation capacity of the diode is improved.

The invention provides a light-emitting diode, a light-emitting device and a light-emitting device. According to the invention, the P-type doped first ohmic contact layer is formed on one side of the N-type semiconductor layer, and the first electrode formed by the transparent conductive material is formed above the first ohmic contact layer. The first electrode and the P-type first ohmic contact layer can form forward current conduction from the first ohmic contact layer to the first electrode, and on the other hand, a strong built-in electric field is formed between the heavily-doped P-type first ohmic contact layer and the N-type semiconductor layer, so that the valence band top electron energy level of the P side is higher than the conduction band bottom electron energy level of the N side; therefore, a forward tunneling current from the N-type semiconductor layer to the P-type first ohmic contact layer can be generated under the action of an external electric field, so that the light-emitting diode has good electrical performance; a metal material layer is not formed between the first electrode and the first ohmic contact layer any more, so that light absorption and shielding are reduced, and the light emitting effect of the light emitting diode is improved.

The invention relates to the technical field of circuit control, and provides a control method and device of a three-phase half-bridge circuit. The method comprises the following steps: obtaining an output current of a third-phase bridge arm from a three-phase half-bridge circuit in an interval time period from completion of switching of two-phase bridge arms of the three-phase half-bridge circuit to control of the third-phase bridge arm of the three-phase half-bridge circuit to form a zero vector; determining that the current direction of the output current corresponds to the zero vector, and controlling the switching devices of the upper and lower bridge arms of the third-phase bridge arm to be switched off; wherein the zero vector comprises a 000 vector or a 111 vector, the current direction corresponding to the 000 vector is a forward current, and the current direction corresponding to the 111 vector is a reverse current. According to the control method of the three-phase half-bridge circuit provided by the embodiment of the invention, the switching frequency of the switching device of the three-phase half-bridge circuit can be reduced, and the switching loss is reduced.

The invention discloses an electrocatalytic oxidation method and system and application, and the method comprises the following steps: controlling the electrocatalytic oxidation system to perform treatment at low current density under a reverse current condition, so that transition metal ions are dissolved out from a cathode, and the transition metal ions and low-molecular organic acid in wastewater form a transition metal-organic acid complex; switching the current direction of the electrocatalytic oxidation system into a positive direction, and performing electrocatalytic oxidation by adopting a first current density; and keeping the forward current direction, turning on the pulsed power supply, and carrying out electrocatalytic oxidation by adopting second current density to break the transition metal-organic acid complex, thereby solving the problems of low industrial wastewater degradation efficiency and high treatment cost.

A dust extractor (100) comprising at least one cyclone tank (110), a prefilter arrangement (120), an essential filter arrangement (130), a blower system (140), and a control unit (150) arranged to control a solenoid arrangement configured to actuate a pressure release valve (220, 310, 320) of the dust extractor (100), where the pressure release valve (220) is arranged to connect an internal volume (V) of the cyclone tank (110) to an external volume (E) of the dust extractor (100), the solenoid arrangement comprising a solenoid device (340) and a remanence mitigation circuit (155) configured to generate a reverse current through a coil of the solenoid device (340) after actuation of the solenoid device (340) by a forward current through the coil.