56 results about "Forward current" patented technology

The invention discloses a method for measuring and analyzing residual magnetism characteristics of an iron core. According to the method, a to-be-detected iron core is demagnetized, preset residual magnetism is set, direct-current voltage excitation with opposite polarities, the same amplitude and the same duration is applied to a primary winding of the to-be-detected iron core, and transient current response signals are synchronously collected; two groups of current under positive / negative polarity excitation are extracted, and the residual magnetism direction is judged by comparing the change rate of the current; a curve of equivalent resistance changing along with time is calculated based on forward current and voltage, a resistance value corresponding to a characteristic inflection point moment is selected, the resistance value is substituted into a pre-established residual magnetism-equivalent resistance empirical formula to deduce the magnitude of residual magnetism, and a matched iron core residual magnetism detection and demagnetization integrated system integrates information management, residual magnetism detection, demagnetization and display modules. And closed-loop automation of detection, analysis and demagnetization is realized. According to the method, a magnetic field sensor is not needed, the residual magnetism direction and size can be synchronously obtained in a high-precision and robust mode only through port electric signals, and the method is suitable for on-site off-line or live detection.

A temperature sensor device is capable of measuring minute temperature changes while being manufactured at low cost without needing a high performance IC tester. A temperature sensor device includes a temperature sensor circuit 2 and a temperature sensor 1. The temperature sensor 1 includes a PN junction element 15 which is a temperature sensing element, a variable current source which supplies different forward currents of at least two values to the PN junction element 15 and a constant voltage source 16 which outputs a constant voltage having the same temperature properties as a forward voltage of the PN junction element 15.

The utility model relates to the technical field of medical equipment, and particularly discloses a bipolar nanosecond pulse synchronous output circuit and ablation equipment, which comprise a positive pulse output circuit and a negative pulse output circuit, the positive pulse output circuit comprises a positive pulse charging unit, a positive pulse output control unit, a positive pulse transmission unit and a positive pulse output electrode wire which are electrically connected in sequence; the negative pulse output circuit comprises a negative pulse charging unit, a negative pulse output control unit, a negative pulse transmission unit and a negative pulse output electrode wire which are electrically connected in sequence; the positive pulse transmission unit at least comprises a forward multiplication transmission unit which is used for performing forward voltage multiplication or forward current multiplication on the forward output pulse signal; the negative pulse transmission unit at least comprises a negative multiplication transmission unit which is used for carrying out negative voltage multiplication or negative current multiplication on the negative output pulse signal. The bipolar nanosecond pulse synchronous output circuit provided by the utility model can improve instant pulse energy of nanosecond pulse tumor ablation equipment.

A moving core has a moving core main member made of soft magnetic materials and a permanent magnet member made of hard magnetic materials. A direction of the magnetic pole of the permanent magnet member matches that of a coil when the coil is positively energized with the forward current, and a stator core is non-existent in a range of movement of the permanent magnet member. Since there is the non-existent portion of the stator core in the range of movement of the permanent magnet member, it is possible to prevent generation of a magnetic flux loop of the magnetic field of the permanent magnet and it is possible to prevent a reduction of the attractive force.

The present application relates to the field of device fault diagnosis, and provides a device fault diagnosis method, system and equipment based on phase current and zero sequence voltage, comprising calculating phase current steady-state value and phase current fault transient value, and constructing single-phase open circuit fault flag; when the single-phase open circuit fault flag indicates that there is single-phase open circuit fault, obtaining fault phase flag quantity through phase current intensity coefficient; constructing first inverter fault flag through zero sequence voltage, when the first inverter fault flag indicates that there is fault, constructing second inverter fault flag through phase current unit value, obtaining inverter fault flag through the first inverter fault flag and the second inverter fault flag, determining device positioning threshold, constructing inverter fault positioning flag based on the device positioning threshold, positive current intensity and negative current intensity; obtaining final fault positioning flag, thereby diagnosing device fault of the device.

The invention relates to the technical field of IGBT (Insulated Gate Bipolar Translator) structures, and discloses a soft-recoverable IGBT structure, which comprises an MOS (Metal Oxide Semiconductor) gate structure positioned on the front surface of a device, a diode anode structure, an n drift layer for bearing the withstand voltage of the device, and a field stop layer positioned below the n drift layer and used for optimizing an internal electric field of the device, a gradually-doped n-type adjusting layer, an IGBT part, a diode part, a p-type collector region and an n-type cathode region are arranged between the n drift layer and the field stop layer, the IGBT part and the diode part are arranged in anti-parallel, the p-type collector region is located on the back surface of the device and serves as the IGBT part, and the n-type cathode region is located on the back surface of the device and serves as the diode part. By introducing the n-type adjusting layer, excellent soft recovery characteristic and dynamic robustness are realized, low overall loss is maintained, and the device has strong recovery capability under extreme conditions (high VCC, high forward current and high temperature). And the tradeoff and tradeoff triangular relationship limitation among the traditional total loss, reverse recovery softness and diode (FWD) recovery safety working area is broken through.

The application provides a semiconductor structure and a forming method thereof. The semiconductor structure comprises: a substrate, the substrate comprising a first epitaxial layer and a second epitaxial layer on the first epitaxial layer; a deep well protection column, which is separated from the surface of the first epitaxial layer and extends into the first epitaxial layer and extends to below the second epitaxial layer in the width direction, and the thickness of the first epitaxial layer between the deep well protection column and the substrate is 6-12 μm; a well contact layer, which has the same doping type as the deep well protection column, extends into the deep well protection column from the surface of the deep well protection column and is surrounded by the sidewall and bottom of the deep well protection column; and a metal layer, which is located on the surface of the well contact layer and the sidewall and surface of the second epitaxial layer. The semiconductor structure and the forming method thereof can reduce the surface electric field of the device, increase the forward current and improve the reliability of the device.

The invention relates to the technical field of semiconductor power devices, and discloses a method for optimizing a beta-Ga2O3 Schottky diode interface through hydrogen treatment, and the method comprises the steps: providing a beta-Ga2O3 Schottky diode, the beta-Ga2O3 Schottky diode comprises a beta-Ga2O3 semiconductor substrate, an n-type drift layer located on the beta-Ga2O3 semiconductor substrate, a Schottky anode located on the n-type drift layer and formed by stacking a nickel layer and a gold layer, and an edge terminal surrounding the Schottky anode. The beta-Ga2O3 Schottky diode is subjected to hydrogen treatment in a hydrogen-containing environment, so that hydrogen atoms are preferentially gathered and act on a contact interface of the nickel layer and the n-type drift layer, and the interface state of the interface is passivated. According to the invention, hydrogen treatment passivates interface defects, the Schottky barrier height and ideal factors can be reduced, the forward current density can be improved, and the on-resistance can be reduced, so that the overall electrical performance and energy conversion efficiency of the device can be improved.

A power converter having an integrated input bias self-supply function has an input switch, a controller, an output switch, and an output filter having an inductor. The controller includes control circuitry, a bias drive circuit, and a bias supply circuit. The bias supply circuit includes a bias transistor and a bias diode. The control circuitry and the bias drive circuit produce a bias drive signal indicative of the conductive states of the input and output switches. When the bias drive signal is asserted, the bias transistor is configured to be on and the bias diode is configured to be reverse biased and not conduct any forward current. When the bias drive signal is deasserted, the bias transistor is configured to be off.

Light-emitting device configured to emit radiation, comprising: a substrate (50); an epitaxic structure (20) comprising in succession a first DBR stack (21), a light-emitting stack (22), a second DBR stack (23) and several discrete first and second contact regions (241), wherein the light-emitting device emits coherent light having a far-field angle of less than 15 degrees, at a forward current between a laser threshold current and a saturation current therein, and incoherent light at a forward current less than the laser threshold current, wherein the epitaxial structure (20) is arranged on the substrate (50) and further comprises: several first radiation-emitting areas in a first column; and several second radiation-emitting areas in a second column; a conductive layer (60) on the epitaxial structure (20); wherein the contact areas (241) are arranged in a two-dimensional field and are configured to direct a spatially limited current in the light-emitting device to the several first radiation-emitting areas and the several second radiation-emitting areas; and wherein one of the several first contact areas includes a first latitude (w3') and one of the several second contact areas includes a second latitude (w3) that differs from the first latitude (w3').

The invention relates to the technical field of circuit devices, and particularly provides an amplifier based on double LDOs and a control method thereof, the amplifier comprises two LDOs and two OPAs; the input end of the LDO1 is connected with the VDD, the adjusting end of the LDO1 is connected with the output end of the OPA1, the output end of the LDO1 is connected with the output end Vout, and forward current is output; the input end of LDO2 is connected with the output end, the adjusting end of LDO2 is connected with the output end of OPA2, and the output end of LDO2 is connected with a compensation voltage end V4 to absorb negative current; the OPA1 is used for carrying out voltage following processing on the input Vset so as to transmit the Vset to the adjusting end of the LDO1 and the in-phase input end of the OPA2; the OPA2 is used for collecting the voltage difference value between the output end and the Vset and transmitting the voltage difference value to the adjusting end of the LDO2. Therefore, the problems of low universality, high cost and unstable manufacturing efficiency of an amplifier based on an integrated circuit in the prior art are solved.

The present application relates to a kind of high-voltage Schottky diode with vertical AlGaN / GaN heterojunction and its preparation method, the preparation method includes the following steps: one, epitaxial material growth;Two, re-growth groove production and re-growth;Three, cathode production;Four, dielectric layer growth;Five, anode production.It utilizes the 2DEG (two-dimensional electron gas) in vertical direction formed by re-growth, can significantly improve the forward current of diode;While utilizing the PN junction formed by re-growth, can uniformly disperse peak electric field, improve electric field concentration effect, improve breakdown voltage, and, when reverse, PN junction can be more effectively reduced reverse leakage than Schottky junction.

An ideal diode bridge controller is provided that includes gate drivers to connect to transistors of a bridge rectifier in which the transistors are arranged as high-side transistors and low-side transistors. The gate drivers alternately switch the transistors to cause the bridge rectifier to convert an input voltage of either of two polarities to an output voltage of one of the two polarities. The gate drivers include low-side gate drivers for the low-side transistors, and respective ones of the low-side gate drivers include linear drive circuitry and digital drive circuitry. The linear drive circuitry drives a respective low-side transistor to switch on and off based on forward current through the respective low-side transistor. The digital drive circuitry detects a reverse current through the respective low-side transistor, and causes the respective low-side transistor to switch off in response to the reverse current.

The application relates to a GaN-based diode designed by body heat dissipation and a preparation method thereof. ‑ The equivalent resistance of the GaN transmission layer is reduced, so that the forward current of the diode is improved; meanwhile, the heat-conducting material is filled between each conductive unit, so that the heat dissipation capacity of the diode is improved.

The invention provides a light-emitting diode, a light-emitting device and a light-emitting device. According to the invention, the P-type doped first ohmic contact layer is formed on one side of the N-type semiconductor layer, and the first electrode formed by the transparent conductive material is formed above the first ohmic contact layer. The first electrode and the P-type first ohmic contact layer can form forward current conduction from the first ohmic contact layer to the first electrode, and on the other hand, a strong built-in electric field is formed between the heavily-doped P-type first ohmic contact layer and the N-type semiconductor layer, so that the valence band top electron energy level of the P side is higher than the conduction band bottom electron energy level of the N side; therefore, a forward tunneling current from the N-type semiconductor layer to the P-type first ohmic contact layer can be generated under the action of an external electric field, so that the light-emitting diode has good electrical performance; a metal material layer is not formed between the first electrode and the first ohmic contact layer any more, so that light absorption and shielding are reduced, and the light emitting effect of the light emitting diode is improved.

The present disclosure relates to a joint motor cogging compensation method and device. The method comprises: performing a step response test on the joint motor, adjusting the motor control parameters based on the test results; controlling the joint motor to run at a first preset step size, recording the current feedback value corresponding to each preset step position point corresponding to the first preset step size, determining the period length of the cogging torque based on the variation characteristics of the current feedback value; determine the sampling step size based on the period length, control the motor to rotate at least one round in the forward and reverse directions respectively, record the forward current and reverse current of each sampling position point corresponding to the sampling step size; calculate the compensation current reference value of each sampling position point to obtain the mapping relationship between the sampling position point and the compensation current reference value; according to the current joint motor position and the mapping relationship, the target compensation current is calculated by using the interpolation algorithm, and the target compensation current is applied to the control loop of the joint motor. The present scheme improves the running smoothness of the joint motor.

A voltage regulator feedback circuit includes a first comparator, a second comparator and a logic circuit. The first comparator is configured to generate an overshoot signal based on a comparison of a voltage regulation target signal to a feedback voltage signal. The second comparator is configured to generate a forward current signal based on a comparison of the current sense amplifier voltage to a reference voltage. The logic circuit is configured to generate a breaking signal based on the overshoot signal and the forward current signal. A gate signal of a transistor connected between a second end of the inductor and a reference ground is generated based at least in part on the breaking signal and is configured to cause the transistor to open based at least in part on the breaking signal having a true value.

A bipolar electrical circuit comprising: - a first terminal (B1, B3) and a second terminal (B2, B4) for electrical connection, designed to receive a potential difference according to a predefined polarity (V) for supplying current to the bipolar electrical circuit, - an electrical warning device (1), coupled to the first (B1, B3) and second (B2, B4) terminals, and configured to operate under a reversed polarity (Vinv) with respect to the predefined polarity (V) when it is supplied with current, the electrical circuit comprising a one-way current switch (3) interposed between one of the terminals and the electrical warning device (1), this switch (3) being oriented in the forward direction of current only for the reversed polarity (Vinv). Figure 1.

Forming plural bumps on a substrate in such a manner that the bumps have uniform heights. A plating apparatus for forming bumps on a substrate is provide. The plating apparatus comprises: a substrate holder constructed to hold the substrate; a plating tank constructed to store plating liquid and the substrate holder; an anode arranged in the inside of the plating tank in such a manner that the anode faces the substrate held by the substrate holder; an electric power source constructed to supply electric current flowing between the substrate and the anode; and a controller; wherein the controller is constructed to make the electric power source output electric current that comprises a first period during that positive-direction electric current is supplied for depositing metal on the substrate from the plating liquid, a second period during that at lest one reverse-current pulse, that flows in a direction opposite to a direction of the positive-direction electric current, is supplied, and a third period during that supplying of electric current is stopped, wherein the third period is a period in the middle of a transition from the reverse-current pulse to the positive-direction electric current.

A power converter may include: a first terminal, a second terminal and a third terminal, and an AC terminal for coupling an AC voltage; a first controllable unidirectional switching circuit; a second controllable unidirectional switching circuit; a controllable bidirectional switching circuit; a first diode connected in a forward current direction between the third terminal and the first controllable unidirectional switching circuit; and a second diode connected in a forward current direction between the second controllable unidirectional switching circuit and the third terminal.

The application discloses a super-junction carrier storage type IGBT device, which comprises a super-junction structure formed on the top surface of a first N-type epitaxial layer, and the doping concentration of an N-type column is greater than that of the first N-type epitaxial layer. The body region of the device unit structure is formed in the surface region of the N-type column. The N-type column at the bottom of the body region constitutes a carrier storage layer. The first N-type epitaxial layer at the bottom of the carrier storage layer serves as a drift region. The thickness of the super-junction structure is set according to the thickness of the carrier storage layer, and the thickness of the carrier storage layer is set according to the required current capacity when the IGBT device is forward conducting. The thickness of the super-junction structure and the total withstand voltage of the IGBT device are independent. The application can avoid the adverse effect of the super-junction structure on the forward conducting current capacity of the device when the device withstand voltage is improved, thereby maximizing the forward conducting current capacity of the device by using the super-junction structure, and independently adjusting the reverse withstand voltage and the forward current conducting capacity of the device.

The present invention forms a plurality of bumps at a uniform height on a substrate.　A plating device for forming a plating film on a substrate includes: a substrate holder for holding the substrate; a plating tank for storing a plating solution together with the substrate holder; an anode disposed in the plating tank so as to face the substrate held by the substrate holder; a power supply for supplying a plating current between the substrate and the anode; and a control unit. The control unit causes the power supply to output a plating current that repeats a forward current period in which a forward current for causing a metal to be deposited on the substrate from the plating solution is supplied, a reverse current period in which a reverse current pulse flowing in the opposite direction to the forward current is supplied, and a current pause period in which the supply of current is paused partway during a transition from the reverse current pulse to the forward current. The control unit controls the length of the current pause period such that the width of fluctuation of the plating voltage after the reverse current pulse is supplied falls within a predetermined range.

The invention provides an electromagnetic focusing type shock wave adjusting device and method. The adjusting device comprises a trigger adjusting module, a discharging module and a power source capacitor module. The trigger adjustment module is used for responding to a trigger level signal corresponding to the received adjustment demand information and controlling a target silicon controlled thyristor in the discharge module to be conducted; the discharging module is used for responding to the conduction of the target silicon controlled thyristor, switching on a target capacitor in the power supply capacitor module, and enabling forward current generated by the discharging of the target capacitor to flow to the target coil, so that the target coil is matched with the vibrating diaphragm to generate electromagnetic focusing type shock waves corresponding to the target pulse width; and the power supply capacitor module is used for responding to that the target capacitor is switched on and generating current by discharging the target capacitor so as to enable the current to flow to the discharging module. By means of the device, the pulse width of the electromagnetic focusing type shock wave is adjusted according to the number of the connected capacitors, and the applicability, comprehensiveness and efficiency of adjusting the electromagnetic focusing type shock wave are improved.

The present invention forms a plurality of bumps on a substrate at a uniform height. The present invention provides a plating device for forming a plated film on a substrate, and includes a substrate holder configured to hold the substrate, a plating tank configured to house a plating solution together with the substrate holder, an anode disposed in the plating tank in opposition to the substrate held by the substrate holder, a power source configured to supply a plating current between the substrate and the anode, and a control unit configured to cause the plating current to be output from the power source in a cycle that repeatedly includes a forward current period in which a forward current for causing metal to precipitate from the plating solution onto the substrate is supplied, a reverse current period in which a reverse current pulse that flows in a direction opposite to the forward current is supplied, and a current stop period in which the supply of the current is stopped midway through a transition from the reverse current pulse to the forward current. The control unit is further configured to control the length of the current stop period in such a manner that the variation in the plating voltage after the supply of the reverse current pulse is contained within a prescribed range.

The invention discloses a solar cell structure with matched thermal expansion coefficients for space and a welding method. The solar cell structure comprises a gallium arsenide triple-junction cell layer, a transition layer, a glass sealing alloy layer and a silver layer, the method comprises the following steps: 1, preparing a solar cell; secondly, forward current welding is conducted; thirdly, reverse current welding is conducted; according to the invention, the electrode different-side design is adopted, the lower electrode is moved to the back silver layer, the ratio of the electrode on the front side of the cell is reduced, the effective light receiving area of the cell is increased, the thermal expansion coefficient of the adopted glass sealing alloy layer is close to that of the gallium arsenide triple-junction cell layer, the glass sealing alloy layer has low thermal conductivity, heat transfer on the surface of a welding spot is effectively blocked, and the service life of the cell is prolonged. The risk of gallium arsenide triple-junction cell layer cracking caused by thermal expansion mismatching is eliminated, and the yield and the structural stability are ensured; and by adopting a positive and negative current welding method, the magnetization problem caused by welding current on the glass sealing alloy layer is eliminated, the magnetism is reduced to nT or below, and high-precision application of the space is adapted.

The application discloses a high-depth-width-ratio TSV structure, a preparation method and application thereof. The preparation method comprises the following steps: providing a hole structure, the depth-width ratio of the hole structure is greater than 2 and the aperture is smaller than 100 um; and forming a TSV structure in the hole structure by adopting a pulse reverse electrodeposition method, the pulse reverse electrodeposition comprises a forward current and a reverse current, the current density of the forward current is 1.0 mA / cm 2 The preparation method provided by the application eliminates the protrusions at the through-hole openings by the pulse reverse electrodeposition, and then deposits the dense TSV structure. In the pulse reverse electrodeposition, specific deposition conditions and processes are set, so that the hole structure with high depth-width ratio and small diameter is fully filled, and the holes are avoided. The preparation method provided by the application can be widely applied to the processing and manufacturing processes of various MEMS devices and semiconductor devices, and has wide application prospect.

The utility model relates to the field of batteries, particularly provides a battery testing device, and aims to solve the problem that the testing result of an existing testing device is inaccurate. Therefore, the battery testing device comprises a plurality of current probes and a plurality of current leads, wherein the current lead comprises a positive current lead and a negative current lead; the forward current wires comprise a plurality of forward current transmission wires and a plurality of forward current output wires; the plurality of forward current transmission wires are connected with the current probe and form a plurality of contact points with one ends of the plurality of forward current output wires; the negative current lead comprises a plurality of negative current transmission leads and a plurality of negative current output leads; the plurality of negative current transmission wires are connected with the current probe and form a plurality of contact points with one ends of the plurality of negative current output wires. Through the above implementation mode, the main grid at the edge position and the main grid at the middle position of the battery can transmit current through different contact points, the problem of local brightness is avoided, and the test result is more accurate.

A state estimation system for a power conversion semiconductor apparatus in an embodiment includes an analysis processing unit and an estimation processing unit. The analysis processing unit projects points indicating a combination of a voltage detection value in first time history data of a voltage between the pair of main terminals detected when the pair of main terminals are forward-biased and when the pair of main terminals are reverse-biased and a current detection value in second time history data of detection values of both a forward current and a reverse current between the pair of main terminals onto a coordinate plane including a voltage axis and a current axis on the basis of the first time history data and the second time history data in the power conversion semiconductor apparatus including the pair of main terminals and derives a distribution of the projected points on the coordinate plane. An estimation processing unit estimates a state of the power conversion semiconductor apparatus on the basis of a distribution of the projected points.

The application discloses a low-cost full-vertical gallium nitride Schottky barrier diode and a preparation method thereof. The diode comprises a transmission layer, a drift layer located at the lower surface of the transmission layer, a positive electrode located at the middle of the lower surface of the drift layer, a negative electrode located at the middle of the upper surface of the transmission layer, a first dielectric layer located at the lower surface of the remaining drift layer and the sidewall and part of the lower surface of the positive electrode, a second dielectric layer located at the upper surface of the remaining transmission layer and the sidewall and part of the upper surface of the negative electrode, a positive electrode thickening layer located at the lower surface of the first dielectric layer and the lower surface of the remaining negative electrode, a conductive substrate located at the lower surface of the positive electrode thickening layer, an additional positive electrode located at the middle of the lower surface of the conductive substrate, and a negative electrode thickening layer located at the upper surface of part of the second dielectric layer and the upper surface of the remaining negative electrode. The application realizes a full-vertical device structure with full longitudinal conduction, improves the forward current density of the device, and reduces the on-resistance.

The application discloses a solid-state alternating current circuit breaker based on zero-voltage on-off of thyristor and a control method thereof. The forward branch of the solid-state alternating current circuit breaker is formed by series connection of a thyristor and a first fast mechanical switch, the thyristor is forward current, the negative branch is formed by series connection of at least one diode and a second fast mechanical switch, the diode is negative current, the thyristor breaks current and does not bear voltage, and the thyristor is zero-voltage on and zero-voltage off during operation; the diode bears current and voltage, and the withstand voltage level of the diode is higher than that of the phase voltage peak value; the fast mechanical switch bears voltage and does not break current, and the withstand voltage level of the fast mechanical switch is higher than that of the phase voltage peak value, and the fast mechanical switch is zero-current closing and zero-current opening during operation. According to the application, the thyristor and the fast mechanical switch can be controlled according to the voltage and current polarity and in a specific time sequence, the voltage borne by the thyristor is much lower than the voltage borne by the diode, and when the voltage level of the alternating current system increases, the number of the thyristors can remain unchanged, and the economy is improved.