60 results about "Power diode" patented technology

The invention discloses a power diode based on an MOF, a preparation method, a 3D chip packaging method and application, belongs to the technical field of electronic materials and power devices, and particularly relates to a composite structure based on an n-Si substrate / an (n-Si)-(ZIF-8) composite layer / an Ag layer, preparation, a 3D chip packaging method and application of the composite structure in the field of power devices. The reverse withstand voltage of the power diode based on the n-Si substrate / ''(n-Si)-(ZIF-8) composite layer'' / Ag layer composite structure exceeds 200V, the forward conduction voltage of the power diode is 0.25-1.5 V, the reverse bias voltage applied to the power diode is 0-200V, the reverse leakage current is basically not increased along with the increase of the reverse bias voltage, and the reverse leakage current is 0.2-2.1 mA (at the reverse voltage-100V). Compared with a conventional power diode based on an n-Si substrate / Ag layer Schottky structure, the performance of the power diode provided by the invention has the advantages that although the forward voltage is basically unchanged, the reverse voltage is increased by 80-400%, the reverse saturation current is reduced by 50-800%, and the highest yield reaches 95%.

The invention relates to a direct current uninterruptible power supply system for an unmanned aerial vehicle, and solves the problems of unstable switching of a main power supply and a standby power supply, power supply interruption, large voltage fluctuation and the like in the prior art. Comprising a main generator, a standby generator, a lithium ion storage battery pack, a task bus bar, an uninterrupted bus bar and a power diode, a standby generator voltage gt; the voltage of the lithium ion storage battery pack is direct current voltage, the main generator is directly connected with the task bus bar to supply power to the task load and is connected with the uninterrupted bus bar through the power diode, the standby generator is connected with the uninterrupted bus bar through the power diode, and the lithium ion storage battery is connected with the uninterrupted bus bar through the power diode. According to the invention, the stability of the power supply is improved, the passive switching of the uninterrupted bus bar power supply is realized, and no controller or software fault risk exists. Meanwhile, the system reduces an electronic control unit, adapts to extreme environments such as plateaus and polar regions, and prolongs the service life of the lithium ion storage battery.

The application discloses a high-voltage and high-current power diode module, which comprises a bottom plate, a plurality of unit modules are arranged on the bottom plate, each unit module is composed of an upper unit and a lower unit, ceramic copper-clad plates are arranged in the upper unit and the lower unit, first areas and second areas are arranged on the ceramic copper-clad plates, a plurality of diode chips are mounted on the first areas, the plurality of diode chips are arranged in an array, the second areas are connected with the anodes of the diode chips through aluminum wires, the first areas in the upper unit and the lower unit are commonly connected with an anode power terminal, and the second areas in the upper unit and the lower unit are commonly connected with a cathode power terminal. The application has the advantages of high current-carrying capacity, high voltage resistance, compact module design structure, small size, excellent module heat dissipation and insulation performance.

This invention discloses a circuit for suppressing back electromotive force (EMF) in a wire-feeding motor, comprising: a protection filter circuit, a half-bridge circuit, a half-bridge drive circuit, and an overvoltage monitoring and braking circuit. The protection filter circuit is connected to the power bus to prevent backflow of EMF into the power bus and to perform filtering. The half-bridge circuit is connected to the protection filter circuit and an external motor. The half-bridge drive circuit is connected to the half-bridge circuit to drive the half-bridge circuit and drive the motor to rotate. The overvoltage monitoring and braking circuit is connected to the protection filter circuit and the half-bridge drive circuit to monitor the voltage of the power bus. When the voltage of the power bus is too high, it performs rapid discharge and simultaneously drives the motor to stop rotating through the half-bridge drive circuit. This invention fundamentally cuts off the path of backflow of the back EMF generated by the motor or inductive load to the power supply by connecting a power diode D1 in series on the bus and utilizing its unidirectional conductivity.

This utility model discloses a high-temperature resistant, high-safety, high-power diode, relating to the field of diode technology. This high-temperature resistant, high-safety, high-power diode, through the arrangement of a first protective shell, a second protective shell, a heat sink, a filter box, a cooling box, a water tank, a first mounting box, a second vent, a second filter plate, a fan, a cooling pipe, a first connection port, a second mounting box, a cooler, a connecting pipe, and a water pump, achieves rapid cooling of the diode body. The heat sink dissipates the heat emitted by the diode body into the surrounding air. The fan, when activated, draws the cooled gas from the cooling box into the first mounting box through the first connection port. The cooled gas in the first mounting box, after being dried and filtered by the second filter plate, enters the first and second protective shells to cool the diode body, improving the cooling efficiency and enabling rapid heat dissipation of the diode body.

The utility model belongs to diode packaging technical field, concretely relates to a plastic package integrated high -power diode. Its including bottom plate, plastic package body, chip group and terminal piece, the first recess is formed with bottom plate both sides, plastic package body sets up on bottom plate, and plastic package body both sides extend to with bottom plate bottom plane level along the first recess downward, chip group sets up between plastic package body and bottom plate, and chip group bottom plane is contacted with bottom plate, and chip group rest surface is contacted with plastic package body, and terminal piece first end is connected with chip group top surface, and second end extends to plastic package body outside through plastic package body. The utility model is used to solve the problem of high -power diode packaging heat conduction effect is not good. Chip group is covered in plastic package body, and chip group is contacted with bottom plate and plastic package body directly, utilizes plastic package body and bottom plate heat dissipation, and heat dissipation path is shortened, improves heat dissipation effect, and plastic package body can bear higher temperature, improves heat dissipation effect, and plastic package body and bottom plate one -off forming shorten the production flow, and improved production efficiency.

This utility model relates to the field of high-voltage electrical system technology, and particularly to a DC copper busbar with single-phase conduction function, comprising: an input copper busbar, an output copper busbar, a power diode, and an insulating material; the input and output copper busbars are arranged in parallel, and the two copper busbars have an overlapping area in a direction perpendicular to the plane of the copper busbars, with a predetermined gap between the input and output copper busbars in the overlapping area; the power diode is disposed within the gap in the overlapping area of ​​the input and output copper busbars, and its two ends are electrically connected to the input and output copper busbars respectively; the insulating material fills the remaining gaps outside the power diode in the overlapping area of ​​the input and output copper busbars. This utility model solves the problems of high cost, reliance on manual operation, and complex structure of existing anti-reverse protection measures.

The application discloses a hybrid AC-AC converter, comprising: an AC bus on the rectifier side, a converter transformer, a rectifier, an inverter, an AC bus on the inverter side, an AC filter and a DC filter; the rectifier is composed of a high-voltage valve group LCC and a low-voltage valve group MMC, the high-voltage valve group and the low-voltage valve group of the inverter are both in the form of half-bridge sub-module MMC, and a high-power diode valve D is connected in series at the DC outlet of the high-voltage valve group MMC; the rectifier side LCC adopts constant-current control based on the DC voltage of the rectifier side MMC, the rectifier side MMC adopts voltage amplitude-frequency control, and the inverter side MMC adopts constant DC voltage control and constant reactive power control. The application can realize low-frequency transmission of pure new energy power generation bases, well adapt to power fluctuation of the new energy power generation bases, fully utilize the technical maturity of the LCC and the MMC, and reduce engineering cost and power loss compared with a conventional AC-AC converter based on back-to-back MMC.

The application provides a JBS power diode based on self-assembled Ni nano-islands and a preparation method thereof. The structure of the diode comprises, from bottom to top, a cathode, an N+ substrate, a JBS structure and an anode, the JBS structure comprises an N-drift layer, a PN heterojunction and Ni nano-islands, wherein the N-drift layer is provided with a groove structure, a P-type metal oxide on the inner side and the bottom of the groove forms a PN heterojunction with the N-drift layer; the Ni nano-islands are located on the top of the groove and form a Schottky contact with the N-drift layer; the PN heterojunction is connected in parallel with the Schottky contact. The self-assembled nano-islands formed by the Ni film under rapid thermal annealing are used to replace photoresist as a mask, so that the photoetching step is omitted, the preparation process is greatly simplified, the preparation period is shortened, and the cost is saved.

The invention relates to a low-voltage BMS circuit and system and a vehicle, and belongs to the technical field of vehicle-mounted energy storage, and the low-voltage BMS circuit is characterized in that the positive electrode of a battery cell module is connected to a generator and a complete machine load; the negative electrode of the battery cell module is connected to the power discharging NMOS module and the power charging NMOS module, and is connected to the positive electrodes of the two super capacitors which are connected in series through a unidirectional power diode; the negative electrode of the super capacitor is connected to the generator and the complete machine load through the charge and discharge load throwing switch NMOS and the charge and discharge load throwing NMOS driving circuit module; the voltage acquisition module is connected to the two super capacitors and is used for acquiring voltage values of the two super capacitors; and the MCU is used for controlling the opening and closing states of the charging load throwing switch NMOS and the discharging load throwing switch NMOS based on the voltage values of the two super capacitors. According to the invention, low-cost and reliable BMS protection can be realized.

The present disclosure relates to a system for performing an Additive Manufacturing (AM) fabrication process on a powdered material, deposited as a powder bed and forming a substrate. The system makes use of a laser for generating a laser beam, and an optical subsystem. The optical subsystem is configured to receive the laser beam and to generate an optical signal comprised of electromagnetic radiation sufficient to melt or sinter the powdered material. The optical subsystem uses a digitally controlled mask configured to pattern the optical signal as needed to melt select portions of a layer of the powdered material to form a layer of a 3D part. A power supply and at least one processor are also included for generating a plurality of different power density levels selectable based on a specific material composition and a known absorptivity of the powder particles. The powdered material is used to form the 3D part in a sequential layer-by-layer additive manufacturing process.

The invention provides a single-stage bridgeless conversion device integrating a Buck-Boost circuit and a half-bridge LCC circuit. The single-stage bridgeless conversion device is characterized by comprising the bridgeless Buck-Boost circuit and the half-bridge LCC circuit, the Buck-Boost circuit comprises three switching tubes Q1, Q2 and Q3, and one of the switching tubes Q3 is multiplexed as an upper tube of the half-bridge LCC circuit. According to the single-stage bridgeless conversion device integrating the Buck-Boost circuit and the half-bridge LCC circuit, the voltage stress of the MOS tube Q3 can be obviously reduced, and the stress of the added MOS tubes Q1 and Q2 is equal to the input voltage, so that the type selection of the MOS tubes is more favorable, a 500V MOS tube with high cost performance can be selected, and two power diodes are reduced in a main loop, so that the cost of a power semiconductor device can be reduced. Meanwhile, the working principle of the LCC circuit part is completely the same as that of a conventional LCC circuit, the Q3 and the Q4 can realize ZVS within a certain range, the secondary side rectifier diode realizes ZCS, obvious advantages in thermal design and efficiency are achieved, and product development in practical application is more convenient.

Method for processing a power diode (1) comprising the following: - Providing a semiconductor body (10); - Generating an anode region (102) and a drift region (100) in the semiconductor body (10), wherein the anode region (102) comprises an anode body zone (1023) adjacent to the drift region (100); - Forming both an anode contact zone (1021) and an anode damage zone (1022) in the anode region (102) by a single ion implantation process step, which is followed by a temperature healing process step, wherein: (i) defects caused by the implanted ions can only be partially healed, (ii) the anode damage zone (1022) is formed between the anode contact zone (1021) and the anode body zone (1023); and (iii) the only ion implantation process step is performed with an implantation energy of less than 20 keV.

The application provides a kind of switch reluctance motor drive system multi-fault diagnosis method based on current behavior, belong to motor drive system fault diagnosis field.The method reselects the installation position of the three current sensors inherent to motor without increasing the number of sensors, by changing the measurement path of each sensor and the number of measurement current branches, accurately reconstructing the three-phase current value, after the occurrence of fault, the monitoring current value of the corresponding device and the theoretical current value appear larger deviation, by analyzing this current deviation behavior, the rapid diagnosis and positioning of the multiple component faults of switch reluctance motor drive system can be realized, including current sensor fault, winding open circuit fault, power diode open circuit fault and switch tube open circuit short circuit mixed fault, greatly facilitate the monitoring of the health status of switch reluctance motor drive system.

The present invention provides a semiconductor structure having an oxide epitaxial layer with a large bandgap energy, and a method for forming such a structure. [Solution] The semiconductor structure is (Al x Ga 1-x ) y O z The semiconductor structure includes an epitaxial oxide material such as (wherein 0≦x≦1, 1≦y≦3, and 2≦z≦4). The semiconductor structure may include one or more superlattices containing the epitaxial oxide material. The semiconductor structure may include one or more doped superlattices including a host layer and an impurity layer, the host layer containing the epitaxial oxide material. The semiconductor structure may include one or more gradient layers or regions containing the epitaxial oxide material. The semiconductor structure may be part of a semiconductor device such as an optoelectronic device, light-emitting diode, laser diode, photodetector, solar cell, high-power diode, high-power transistor, transducer, or high-electron-mobility transistor.

The present invention provides a single-stage bridgeless conversion device integrating a Buck-Boost circuit and a full-bridge LCC circuit, the single-stage bridgeless conversion device comprising a bridgeless Buck-Boost circuit and a full-bridge LCC circuit. The Buck-Boost circuit comprises three switching transistors Q1, Q2 and Q3, wherein one of the switching transistors, i.e. Q3, is reused as a high-side transistor of the full-bridge LCC circuit. The provision of the three MOS transistors in the Buck-Boost circuit allows one of the MOS transistors to be reused as the high-side transistor Q3 of the LCC circuit; the MOS transistors Q1 and Q2 are used as input rectifying MOS transistors to replace diodes, such that the loss can be obviously reduced and the efficiency can be improved; in addition, the voltage stress is equal to an input voltage, such that cost-effective 500 V MOS transistors can be selected; moreover, two power diodes are omitted in a main circuit, and the full-bridge LCC can achieve higher power output, thus making the application range wider.

The application provides a high-efficiency energy-saving TIG welding power supply system for field operation, and belongs to the technical field of welding. The system comprises a PFC+DC / DC circuit, a super capacitor, a full-bridge inverter circuit, a current detection circuit, a voltage detection circuit and an interactive interface. The system adopts a high-density super capacitor group energy storage module to provide energy for GTAW, and realizes GTAW welding in a field environment without electricity or a small space with difficult power supply. The system adopts a SiC mosfet full-bridge topology to regulate current, and a PFC power factor correction circuit to suppress current pulse amplitude. The system realizes energy saving in the switching process through a new SiC mosfet and a SiC power diode, and reduces energy loss in the switching process of the switching tube.

The invention relates to a gallium oxide power diode with a junction termination extension and groove composite terminal structure and a preparation method thereof. The gallium oxide power diode comprises a cathode metal layer, a highly-doped n-type semiconductor substrate, a lowly-doped n-type gallium oxide epitaxial layer, a p-type semiconductor layer, an anode metal layer and a passivation layer which are sequentially stacked from bottom to top, wherein the upper surface of the low-doped n-type gallium oxide epitaxial layer is provided with a groove; the p-type semiconductor layer is arranged on the low-doped n-type gallium oxide epitaxial layer and transversely extends to cover part of the upper surface of the low-doped n-type gallium oxide epitaxial layer, and the p-type semiconductor layer covers the side wall and the groove bottom of the groove when transversely extending, so that a junction terminal extension and groove composite terminal structure is formed; the anode metal layer is arranged above the p-type semiconductor layer; and the passivation layer covers the upper surfaces of part of the low-doped n-type gallium oxide epitaxial layer, the p-type semiconductor layer and the anode metal layer. The gallium oxide power diode can realize high breakdown voltage and high terminal area utilization efficiency.

An over-temperature protection method and device based on IGBT leakage current are characterized in that a sampling branch formed by connecting a power diode and a precision sensing resistor in parallel is arranged in an IGBT blocking voltage channel, and the leakage current is sampled and converted into a voltage signal in a turn-off blocking state; isolating, conditioning and digitizing the signal, and synchronously acquiring bus voltage, load current and PWM (Pulse-Width Modulation) state; opening a steady-state sampling window after dynamic delay according to a PWM turn-off edge, and extracting a steady-state leakage current value through filtering; performing nonlinear compensation on the leakage current based on the bus voltage; estimating a real-time junction temperature and a change trend thereof according to a preset mapping relation between the compensated leakage current and the junction temperature; and finally, executing multi-level threshold judgment according to the junction temperature value, the change rate and the trend, and outputting a corresponding hierarchical protection instruction. According to the invention, a temperature sensor does not need to be additionally arranged, the sensitivity of the leakage current to the junction temperature is fully utilized, rapid online monitoring and grading protection of the IGBT junction temperature are realized, and the method has the advantages of rapid response, low cost and high reliability.

The invention belongs to the technical field of storage battery charging, and discloses a storage battery constant-current and constant-voltage charging method based on solar battery I-V curve characteristics, which comprises the following steps of: determining charging parameters of a storage battery; calculating the number of solar cells connected in series according to the target constant voltage value and the bus voltage to form solar cell strings, and then calculating the number of solar cell strings connected in parallel according to the target constant current value to complete series-parallel combination of the solar cell strings, so that the output voltage and current of the solar cells meet the constant-current and constant-voltage charging requirements of a storage battery; the positive end of each solar cell string is connected with the V-MOS tube, the negative end is connected with the negative end of the bus, the output end of the V-MOS tube is connected with the cathode of the power diode, the anode of each power diode is electrically connected to the anode of the storage battery, and the cathode of the storage battery is connected with the negative end of the bus to form a closed charging loop. By utilizing the I-V curve characteristic of the solar battery, through series-parallel combination and selective access, constant-current and constant-voltage charging of the storage battery is realized, the circuit is simplified, and the efficiency is improved.

Provided in the present invention are a single-stage bridgeless conversion apparatus integrating Buck-Boost and half-bridge LCC circuits. The single-stage bridgeless conversion apparatus comprises a bridgeless Buck-Boost circuit and a half-bridge LCC circuit. The Buck-Boost circuit comprises three switch transistors Q1, Q2 and Q3, wherein the switch transistor Q3 is shared as a high-side transistor of the half-bridge LCC circuit. In the single-stage bridgeless conversion apparatus integrating Buck-Boost and half-bridge LCC circuits, the voltage stress on the MOS transistor Q3 can be remarkably reduced, while the stress on the added MOS transistors Q1 and Q2 is equal to an input voltage, such that favorable conditions are provided for MOS transistor selection, cost-effective 500 V MOS transistors can be selected, and two power diodes are also omitted from a main circuit, thus reducing the costs of power semiconductor devices. In addition, the operating principle of the LCC circuit part is exactly the same as that of a conventional LCC circuit, wherein Q3 and Q4 can achieve ZVS within a certain range and a secondary rectifier diode achieves ZCS, thereby offering significant advantages in thermal design and efficiency, and better facilitating product development in practical applications.

The invention relates to a novel ScAlN semiconductor material with extremely high hole mobility and a preparation method and application thereof, the material has an ScAlN digital alloy structure and is formed by periodically and alternately stacking basic repetitive units (ScN) m / (AlN) n along an epitaxial growth direction; wherein (ScN) m represents ScN of m atomic layers, and (AlN) n represents AlN of n atomic layers; the value of m is 3 or 5, and the value of n is 1; the number of repetition cycles of the basic repetition units is x, and x is a natural number larger than or equal to 1. According to the structure, the unique octahedral coordination tendency of Sc atoms is utilized, the number of ScN layers and sorting are periodically introduced and limited in AlN crystal lattices, local symmetric breaking and hybrid orbit reconstruction are induced to occur in the crystal lattices, valence band top electron state distribution is remodeled while a wide band gap is kept, and the hole mobility is improved; the structure can be applied to an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with an enhanced p-channel vertical trench gate structure and a p-type GaN power diode device based on an AlN substrate through a pulse growth mode of a periodic switch specific MO source of an MOCVD (Metal-Organic Chemical Vapor Deposition) process.

The invention belongs to the technical field of high-voltage power distribution of new energy automobiles, and particularly relates to a multi-branch power flexible switching circuit and a multi-branch power flexible switching method. Each circuit branch comprises an electric box group, a manual maintenance switch MSD, a direct current discharging relay, a power diode, a direct current charging relay I, a pre-charging relay, a pre-charging resistor, a current sensor, a direct current charging relay II and a gun base; the manual maintenance switch MSD, the direct-current discharge relay and the power diode are sequentially connected in series; the direct-current charging relay I is connected in parallel with the direct-current discharging relay and the power diode; the pre-charging relay, the pre-charging resistor and the direct-current discharging relay are connected in parallel; the current sensor and the direct current charging relay II are sequentially connected in series; according to the device, opening and closing control is carried out on circuit branches through the high-voltage sampling unit HVB, different electric box groups are selected for discharging, and the problem that a multi-branch power supply discharging scheme is single is solved.

1. The name of the design product: power diode module (SJY-M07). 2. The use of the design product: bypass diode for photovoltaic module junction box. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

The invention relates to a power decoupling no-electrolytic capacitor totem-pole bridgeless Sepic circuit control method, a main circuit is a totem-pole bridgeless Sepic circuit, and the totem-pole bridgeless Sepic circuit comprises a first power diode D1, a second power diode D2, a first inductor L1, a first power MOS tube S1, a second power MOS tube S2, an intermediate capacitor CB, a third power diode D3, a second inductor L2, an output capacitor Co and an equivalent output load Ro. And the totem-pole bridgeless Sepic circuit works in a DCM mode to realize automatic power factor correction. On the basis of a traditional totem-pole bridgeless Sepic circuit, by changing the control mode of two MOS tubes of the traditional totem-pole bridgeless Sepic circuit, power decoupling is achieved, input secondary low-frequency ripples are transferred to an intermediate capacitor of the totem-pole bridgeless Sepic circuit, and output voltage is free of the secondary low-frequency ripples. According to the control method, no electrolytic capacitor can be realized without changing the original main circuit structure, and the PFC performance is not changed.

The invention discloses a high-voltage-resistant gallium oxide heterojunction diode based on nickel oxide grown through nickel thermal oxidation magnetron sputtering and a preparation method of the high-voltage-resistant gallium oxide heterojunction diode. The gallium oxide heterojunction diode provided by the invention can be applied to a scene with high withstand voltage and low conduction loss. The preparation method comprises the following steps: cleaning a gallium oxide single crystal substrate; forming a back metal electrode layer on the back surface of the cleaned gallium oxide single crystal substrate; rapid annealing is carried out in a nitrogen atmosphere, so that ohmic contact is formed between the back metal electrode and the gallium oxide single crystal substrate; growing a nickel oxide semiconductor layer on the front surface of the gallium oxide single crystal substrate through nickel thermal oxidation magnetron sputtering, wherein the material in the nickel oxide semiconductor layer is NiOx; and forming a top electrode layer on the surface of the nickel oxide semiconductor layer. According to the invention, the nickel oxide thin film is grown through a metal nickel thermal oxidation magnetron sputtering method, and the NiOx-Ga2O3 heterojunction power diode device with a 2kV withstand voltage level is prepared under the condition of keeping low specific on-resistance.

The application discloses a multi-junction end-extended silicon carbide power diode. + The power diode is in a central-symmetrical cylindrical structure and comprises, from bottom to top, an n + type SiC substrate layer, an i type SiC epitaxial layer, a p + type SiC layer arranged in a concentric circle shape at the outer periphery of the p + type SiC layer, a p type JTE layer arranged on the top surface of the p + type SiC layer, a nano permanent magnetic particle layer arranged on the top surface of the p type JTE layer, a plurality of concentric circular groove structures etched along the p type JTE layer, and a SiO2 filling layer filled in the groove structures, and a p type SiC doped area formed between adjacent groove structures. The application combines an external magnetic field formed by the nano permanent magnetic particle and an internal magnetic field formed by the p type SiC doped area on the basis of the JTE terminal structure, and introduces the groove structure into the p type JTE layer to form a regularly arranged p type SiC doped area, thereby effectively improving the withstand voltage of the power diode.

The invention discloses a battery system supporting sharing of battery packs in different states and a control method, and relates to the technical field of electric forklift batteries. The system comprises a battery system main body, an external support frame and an internal PDU control system, the main body comprises two battery packs with independent states, and the two battery packs can work independently or cooperatively; the supporting frame is provided with fork grooves and supports single-pack / overall battery replacement. The PDU control system comprises a BMS, multiple relays, a pre-charging resistor and a power diode, and voltage and temperature collection, relay control and safety protection are achieved. According to the control method, switching is triggered based on an SOC value, voltage abnormity or a battery fault, seamless switching is completed through cooperation of a BMS and a VCU and cooperation of relay action and time delay, and power failure or manual operation is not needed; the method is compatible with battery packs in different states, solves the problem of shutdown due to single pack failure, improves the battery replacement flexibility and the system safety, and reduces the use cost.

The application discloses a gallium oxide field termination power diode based on SOG, which comprises a cathode metal electrode, a substrate layer and a drift layer arranged in sequence from bottom to top; a plurality of P-type SOG dielectric structures are arranged on the drift layer, and an anode metal electrode is arranged between the surface of the P-type SOG dielectric structure and the intervals of the plurality of P-type SOG dielectric structures. The application further provides a preparation method of the gallium oxide field termination power diode based on SOG. The P-type SOG dielectric structure formed by B-doped SOG is used as a field termination, the electric field distribution in the device channel can be modulated, the peak value of the edge electric field of the anode metal electrode is reduced, the breakdown voltage of the device is improved, and the reverse leakage current of the anode metal electrode can be greatly reduced. In addition, the P-type SOG dielectric structure is used to form a P-type dielectric in a physical spin-on SOG mode, damage caused by a glow introduced during equipment deposition is avoided, the preparation process is simple and easy to implement, and the manufacturing cost is effectively reduced.