144 results about "Power diode" patented technology

The present invention relates to a gallium oxide power diode with a high breakdown voltage and a preparation method thereof. The preparation method includes: selecting a substrate layer, preparing a drift layer on the upper surface of the substrate layer; preparing a cathode on the lower surface of the substrate layer; preparing an anode on the upper surface of the drift layer; performing a low-temperature annealing process on the device to obtain the gallium oxide power diode; wherein, both the substrate layer and the drift layer are Si- or Sn-doped β-Ga2O3 materials, and the doping concentration of the drift layer is lower than that of the substrate layer, the anode is a Ni / Au metal stack, and a NiO layer with P-type characteristics is formed at the interface between the metal Ni and the drift layer, and the NiO layer and the drift layer form a heterojunction PN junction structure. The preparation method of the present invention can form a heterojunction PN junction structure with a P-type characteristic thin layer NiO layer through low-temperature annealing, can modulate the electric field distribution, improve the interface characteristics between the anode metal and gallium oxide, reduce the reverse leakage current, and increase the breakdown voltage of the device.

The utility model relates to the technical field of battery management, and discloses an ideal diode circuit and a battery management system, and the ideal diode circuit comprises a current collection module which is connected between the negative electrode of a battery interface and the negative electrode of a charging interface and is used for collecting current; one end of the operational amplifier module is connected between the cathode of the battery interface and the current acquisition module, and the other end of the operational amplifier module is connected between the current acquisition module and the cathode of the charging interface; the input end of the MOS driving module is connected with the operational amplification module and the current acquisition module, and the output end of the MOS driving module is connected with the negative electrode of the charging interface; wherein the operational amplification module amplifies and processes an acquisition signal of the current acquisition module, and controls the MOS driving module to act. By designing the current acquisition module, the operational amplification module and the MOS driving module, after the mode is adopted to replace a power diode, the occupied space is compact, and the overall design cost is low.

The utility model provides a single-stage bridgeless conversion device integrating a Buck-Boost circuit and a full-bridge LCC circuit. The single-stage bridgeless conversion device comprises the bridgeless Buck-Boost circuit and the full-bridge LCC circuit. The Buck-Boost circuit comprises three switching tubes Q1, Q2 and Q3, and one of the switching tubes Q3 is multiplexed as an upper tube of the full-bridge LCC circuit. The Buck-Boost circuit is provided with three MOS (Metal Oxide Semiconductor) tubes, so that one MOS tube can be multiplexed as a switch tube Q3 of the LCC circuit. The MOS tubes Q1 and Q2 serve as input rectification MOS tubes to replace diodes, the loss can be obviously reduced, the efficiency can be improved, meanwhile, the voltage stress is equal to the input voltage, the MOS tubes can select 500V MOS tubes with high cost performance, two power diodes are omitted in a main loop, and meanwhile the full-bridge LCC can achieve higher power output and can be wider in application range.

The invention relates to the technical field of electronic device packaging, in particular to a power diode packaging method which comprises the following steps: S1, pretreating silica gel into a fluid state and adjusting the dynamic viscosity value of the silica gel to a preset range; s2, adding fluid protection glue into the coating system for dispensing, and performing thinning operation and leveling operation by using a scraper to form a flexible packaging layer; s3, judging whether the flexible packaging layer has defects or not and the specific types of the defects, repairing the defects and adjusting operation parameters of a coating system to obtain a gluing assembly; s4, the gluing assembly is placed in a curing chamber to be heated and cured, and a packaged product is obtained; and S5, performing rib cutting forming on the packaged product to obtain the packaged power diode. According to the packaging method of the flexible packaging layer, the overall thickness of the power diode is controlled to be below 0.8 mm, meanwhile, mechanical stress in the plastic packaging process is avoided, and the packaging defect rate is reduced.

The invention provides a one-way parallel storage battery capacity checking system, and relates to the field of battery capacity checking, all parallel battery pack modules are connected in parallel and are used for receiving floating charge provided by a one-way AC / DC module in a normal state and supplying power to a direct current load in a capacity checking state; the one-way AC / DC module is directly connected with a direct-current load, is connected with each parallel battery pack module through the automatic seamless connection module, and is used for converting alternating current into direct current, supplying the direct current to each parallel battery pack module to maintain a floating charge state and providing stable power for the direct-current load; and the automatic seamless connection module is used for keeping a floating charge state of the parallel battery pack module in a normal state, and automatically switching a current path according to the voltage change of the parallel battery pack module in a capacity checking state, so that the high-power diode is switched on, the corresponding parallel battery pack module stably discharges to a direct-current load, and voltage backflow is prevented.

The invention provides a switched reluctance motor driving system multi-fault diagnosis method based on current behaviors, and belongs to the field of motor driving system fault diagnosis. According to the method, the installation positions of three inherent current sensors of the motor are reselected without increasing the number of the sensors, the three-phase current value is accurately reconstructed by changing the measurement path and the measurement current branch number of each sensor, and after a fault occurs, the monitored current value of a corresponding device has a large deviation from the theoretical current value, and the fault is detected. Through analysis of the current deviation behavior, rapid diagnosis and positioning of various component faults, including current sensor faults, winding open-circuit faults, power diode open-circuit faults and switch tube open-circuit and short-circuit mixed faults, of the switch reluctance motor driving system can be realized. And the health condition of the switched reluctance motor driving system can be monitored conveniently.

The invention relates to a multi-level power supply unmanned aerial vehicle electrical system, and solves the problem of unsuccessful risk of connecting a storage battery into a power grid after a single generator breaks down. Comprising a dual-redundancy direct-current power supply system, ground 28V and 12V power supplies, a 28V storage battery, a 12V tap power supply of the storage battery, a 12V generator, a ground control switch, a grid-connected control circuit and a power distribution manager, the grid-connected control circuit comprises a bus bar, a grid-connected power switch and a power diode; the bus bar comprises a task bus bar, an uninterrupted bus bar and an engine bus bar; the power distribution manager receives a main / standby generator power supply, ground 28V and 12V power supplies, a 28V storage battery and a 12V tap power supply of the storage battery to realize uninterrupted power supply of an uninterrupted bus bar load and an engine bus bar load respectively. A dual-redundancy power supply system and a mode that the storage battery is directly hung on a power grid are adopted, the voltage of an uninterrupted bus bar and the voltage of an engine bus bar are absolutely reliable, and the safety of the electrical system of the unmanned aerial vehicle is greatly improved.

The utility model provides a single-stage bridgeless conversion device integrated with a Buck-Boost circuit and an AHB flyback circuit. The single-stage bridgeless conversion device is characterized by comprising a bridgeless Buck-Boost circuit and an AHB flyback circuit, the Buck-Boost circuit comprises three switching tubes Q1, Q2 and Q3, and one of the switching tubes Q3 is multiplexed as an upper tube of the AHB flyback circuit. According to the single-stage bridgeless conversion device integrated with the Buck-Boost and AHB flyback circuits, the voltage stress of the switch tube Q3 can be obviously reduced, and the stress of the added switch tubes Q1 and Q2 is equal to the input voltage, so that the type selection of the switch tubes is more favorable, a 500V switch tube with high cost performance can be selected, two power diodes are reduced in a main loop, and the cost performance of the main loop is improved. Therefore, the cost of the power semiconductor device can be reduced. Meanwhile, the working principle of the AHB flyback circuit part is completely the same as that of a conventional AHB flyback circuit, Q3 and Q4 can realize ZVS in a full-load range, a secondary side rectifier diode realizes ZCS, the gain change range is large, and wide voltage input and output can be realized.

The invention discloses a power diode based on an MOF, a preparation method, a 3D chip packaging method and application, belongs to the technical field of electronic materials and power devices, and particularly relates to a composite structure based on an n-Si substrate / an (n-Si)-(ZIF-8) composite layer / an Ag layer, preparation, a 3D chip packaging method and application of the composite structure in the field of power devices. The reverse withstand voltage of the power diode based on the n-Si substrate / ''(n-Si)-(ZIF-8) composite layer'' / Ag layer composite structure exceeds 200V, the forward conduction voltage of the power diode is 0.25-1.5 V, the reverse bias voltage applied to the power diode is 0-200V, the reverse leakage current is basically not increased along with the increase of the reverse bias voltage, and the reverse leakage current is 0.2-2.1 mA (at the reverse voltage-100V). Compared with a conventional power diode based on an n-Si substrate / Ag layer Schottky structure, the performance of the power diode provided by the invention has the advantages that although the forward voltage is basically unchanged, the reverse voltage is increased by 80-400%, the reverse saturation current is reduced by 50-800%, and the highest yield reaches 95%.

A power diode (1), comprising a semiconductor body (10) coupled to an anode metallization (11) and a cathode metallization (12) of the power diode (1), wherein the semiconductor body (10) has a drift region (100) of a first conductivity type and an anode region (101) of a second conductivity type, wherein the anode region (101) comprises: - a contact zone (1011) arranged in contact with the anode metallization (11); - a field stop zone (1012) arranged below the contact zone (1011); - a body zone (1013) arranged below the field stop zone (1012) and above the drift region (100); wherein an electrically activated dopant concentration of the anode region (101) has a profile along a vertical direction (Z) according to which: - a first maximum (31) is present in the contact zone (1011); - a second maximum (32) is present in the field stop zone (1012);and- the dopant concentration decreases continuously from the first maximum (31) to a local minimum (33) and increases continuously from the local minimum (33) to the second maximum (32), the second maximum (32) being in the range from 70% to 130% of the first maximum (31); wherein, according to the profile, the dopant concentration decreases continuously from the second maximum (32) to an inflection point (34) at which the rate of change of the dopant concentration with respect to the vertical direction (Z) has a local maximum, and wherein, during a blocking state of the power diode (1), the electric field ends below the inflection point (34);

The invention discloses an interlaced PFC circuit and a current sharing control method thereof. The interlaced PFC circuit comprises a rectifier bridge; a first PFC branch circuit and a second PFC branch circuit, the first PFC branch circuit and the second PFC branch circuit respectively comprise a power switch tube and a power diode, the anode of the power diode is connected with the drain electrode of the power switch tube and one output end of the rectifier bridge, and the source electrode of the power switch tube is connected with the other output end of the rectifier bridge; one end of the sampling resistor is connected with the source electrode of the power switch tube, and the other end of the sampling resistor is connected with the cathode of the power diode. According to the staggered PFC circuit, a current sampling error cannot be introduced due to the difference of hardware sampling channels, and no-difference control can be realized when the current of the two branches is in a steady state.

The invention relates to a direct current uninterruptible power supply system for an unmanned aerial vehicle, and solves the problems of unstable switching of a main power supply and a standby power supply, power supply interruption, large voltage fluctuation and the like in the prior art. Comprising a main generator, a standby generator, a lithium ion storage battery pack, a task bus bar, an uninterrupted bus bar and a power diode, a standby generator voltage gt; the voltage of the lithium ion storage battery pack is direct current voltage, the main generator is directly connected with the task bus bar to supply power to the task load and is connected with the uninterrupted bus bar through the power diode, the standby generator is connected with the uninterrupted bus bar through the power diode, and the lithium ion storage battery is connected with the uninterrupted bus bar through the power diode. According to the invention, the stability of the power supply is improved, the passive switching of the uninterrupted bus bar power supply is realized, and no controller or software fault risk exists. Meanwhile, the system reduces an electronic control unit, adapts to extreme environments such as plateaus and polar regions, and prolongs the service life of the lithium ion storage battery.

An electronic device and a manufacturing process of the electronic device, in particular to a method for regulating the Schottky barrier height in a silicon carbide power diode, and to the power diode thereof is provided. An example electronic device comprises: a body of semiconductor material having a surface and an N-type electrical conductivity; switching regions of a P-type electrical conductivity, the switching regions extending into the body starting from the surface; surface portions having the P-type electrical conductivity, extending at the surface between the switching regions; ohmic contact regions at the switching regions; and a contact metal layer above the surface and in direct electrical contact with the surface portions and the ohmic contact regions.

The application discloses a high-voltage and high-current power diode module, which comprises a bottom plate, a plurality of unit modules are arranged on the bottom plate, each unit module is composed of an upper unit and a lower unit, ceramic copper-clad plates are arranged in the upper unit and the lower unit, first areas and second areas are arranged on the ceramic copper-clad plates, a plurality of diode chips are mounted on the first areas, the plurality of diode chips are arranged in an array, the second areas are connected with the anodes of the diode chips through aluminum wires, the first areas in the upper unit and the lower unit are commonly connected with an anode power terminal, and the second areas in the upper unit and the lower unit are commonly connected with a cathode power terminal. The application has the advantages of high current-carrying capacity, high voltage resistance, compact module design structure, small size, excellent module heat dissipation and insulation performance.

The application discloses a low-onset-voltage gallium oxide power diode, and mainly solves the problems of high-onset-voltage and low-breakdown-voltage of the existing gallium oxide power diode. The gallium oxide power diode comprises a cathode (4), a substrate (1), a beta-Ga2O3 drift layer (2) and an anode (5) from bottom to top, and is characterized in that: a ferroelectric material PZT dielectric layer (3) formed by an outer circular ring and an inner circular ring is arranged between the beta-Ga2O3 drift layer and the anode, so that when a positive voltage is applied above the PZT, positive charges are generated at the anode interface, electrons are attracted and accumulated to reduce the onset voltage; when a negative voltage is applied above the PZT, negative charges are generated at the anode interface to form a high-resistance area, and the breakdown voltage of the device is improved. The ferroelectric material PZT dielectric layer (3) is a ferroelectric material PZT field ring formed by pulse laser deposition, photolithography and dry etching. The application can effectively reduce the onset voltage of the device, improve the breakdown voltage of the device, and can be used for rectifiers and direct current converters of power electronic systems.

The invention discloses a direct-current-bias-free high-power LED visible light signal transmission method and system, and relates to the technical field of optical communication, and the method comprises the steps: carrying out 64QAM-OFDM modulation and IQ modulation on original audio and video data, carrying out AC coupling peak-to-peak value extraction and DC component filtering, and then carrying out single-power-supply amplification and pre-equalization; and a driving positive voltage signal is generated to drive a high-power LED to emit light, and an optical communication signal is generated. Through a low-loss alternating-current coupling transmission mode, the modulated real signal peak-to-peak value is subjected to coupling transmission and single positive power supply amplification, so that the signal is changed into positive voltage to control the LED light intensity and form an LED optical communication signal, direct-current voltage does not need to be introduced into a digital domain, the problem of bandwidth reduction is avoided, and the signal transmission efficiency is improved. The direct-current bias voltage of the LED can be kept stable, the LED works in a linear modulation area, bandwidth expansion is carried out through the pre-equalization circuit, and the functions of LED illumination and high-speed communication can be considered.

The invention discloses a fast rear-end auxiliary tube control high-end ideal diode based on an NMOS tube, and relates to the technical field of power diodes, the fast rear-end auxiliary tube control high-end ideal diode comprises a circuit, the circuit comprises a power supply VCC, an NMOS main tube V1, a comparator circuit, a bias power supply and a driving circuit; the comparator circuit comprises two independent auxiliary tubes or geminate transistors which have the same parameters and are packaged together and a resistor, the comparator circuit compares the size of an input end power supply VCC and the size of an output end power supply Vout, outputs a comparison signal, transmits an amplification signal to a grid electrode of the NMOS main tube V1 through the driving circuit, and controls the conduction and cut-off of the NMOS main tube V1; the source electrode of the NMOS main tube V1 is connected to a power supply VCC, and the drain electrode of the NMOS main tube V1 is connected to an output end power supply Vout. The fast rear-end auxiliary tube control high-end ideal diode based on the NMOS tube has the beneficial effects that the conduction and cut-off of the high-end ideal diode are accelerated, backward flowing can be prevented, and a pre-stage circuit can be protected.

The application discloses a wide-bandgap power diode with a periodic composite anode, which comprises, from bottom to top, a wide-bandgap semiconductor material substrate layer, a third anode groove, a wide-bandgap semiconductor material epitaxial layer, a periodic first anode groove and a second anode on the wide-bandgap semiconductor material epitaxial layer, a first dielectric layer and a second dielectric layer arranged on the first anode groove and the upper surface of the wide-bandgap semiconductor material epitaxial layer in sequence, the second dielectric layer arranged on the second anode groove and the upper surface of the wide-bandgap semiconductor material epitaxial layer, a third dielectric layer arranged on the third anode groove, and a metal anode and a metal cathode arranged on the upper surface of the wide-bandgap semiconductor material epitaxial layer and the lower surface of the wide-bandgap semiconductor material substrate layer respectively. The application has the performance advantages of high current density, high breakdown voltage, low on-resistance and low reverse leakage current due to the periodic composite anode structure.

This invention discloses a circuit for suppressing back electromotive force (EMF) in a wire-feeding motor, comprising: a protection filter circuit, a half-bridge circuit, a half-bridge drive circuit, and an overvoltage monitoring and braking circuit. The protection filter circuit is connected to the power bus to prevent backflow of EMF into the power bus and to perform filtering. The half-bridge circuit is connected to the protection filter circuit and an external motor. The half-bridge drive circuit is connected to the half-bridge circuit to drive the half-bridge circuit and drive the motor to rotate. The overvoltage monitoring and braking circuit is connected to the protection filter circuit and the half-bridge drive circuit to monitor the voltage of the power bus. When the voltage of the power bus is too high, it performs rapid discharge and simultaneously drives the motor to stop rotating through the half-bridge drive circuit. This invention fundamentally cuts off the path of backflow of the back EMF generated by the motor or inductive load to the power supply by connecting a power diode D1 in series on the bus and utilizing its unidirectional conductivity.

This utility model discloses a high-temperature resistant, high-safety, high-power diode, relating to the field of diode technology. This high-temperature resistant, high-safety, high-power diode, through the arrangement of a first protective shell, a second protective shell, a heat sink, a filter box, a cooling box, a water tank, a first mounting box, a second vent, a second filter plate, a fan, a cooling pipe, a first connection port, a second mounting box, a cooler, a connecting pipe, and a water pump, achieves rapid cooling of the diode body. The heat sink dissipates the heat emitted by the diode body into the surrounding air. The fan, when activated, draws the cooled gas from the cooling box into the first mounting box through the first connection port. The cooled gas in the first mounting box, after being dried and filtered by the second filter plate, enters the first and second protective shells to cool the diode body, improving the cooling efficiency and enabling rapid heat dissipation of the diode body.

The utility model belongs to diode packaging technical field, concretely relates to a plastic package integrated high -power diode. Its including bottom plate, plastic package body, chip group and terminal piece, the first recess is formed with bottom plate both sides, plastic package body sets up on bottom plate, and plastic package body both sides extend to with bottom plate bottom plane level along the first recess downward, chip group sets up between plastic package body and bottom plate, and chip group bottom plane is contacted with bottom plate, and chip group rest surface is contacted with plastic package body, and terminal piece first end is connected with chip group top surface, and second end extends to plastic package body outside through plastic package body. The utility model is used to solve the problem of high -power diode packaging heat conduction effect is not good. Chip group is covered in plastic package body, and chip group is contacted with bottom plate and plastic package body directly, utilizes plastic package body and bottom plate heat dissipation, and heat dissipation path is shortened, improves heat dissipation effect, and plastic package body can bear higher temperature, improves heat dissipation effect, and plastic package body and bottom plate one -off forming shorten the production flow, and improved production efficiency.

This utility model relates to the field of high-voltage electrical system technology, and particularly to a DC copper busbar with single-phase conduction function, comprising: an input copper busbar, an output copper busbar, a power diode, and an insulating material; the input and output copper busbars are arranged in parallel, and the two copper busbars have an overlapping area in a direction perpendicular to the plane of the copper busbars, with a predetermined gap between the input and output copper busbars in the overlapping area; the power diode is disposed within the gap in the overlapping area of ​​the input and output copper busbars, and its two ends are electrically connected to the input and output copper busbars respectively; the insulating material fills the remaining gaps outside the power diode in the overlapping area of ​​the input and output copper busbars. This utility model solves the problems of high cost, reliance on manual operation, and complex structure of existing anti-reverse protection measures.

A method is provided for characterizing junction temperatures of power diodes devices, each of the diode devices being one-to-one connected in antiparallel to each power semiconductor switching devices of a voltage source inverter having processing and measuring capability, the method including: an initialization stage, wherein a heater is thermally coupled with a heatsink and / or with a direct bonded copper element of the voltage source inverter; a temperature setting stage, wherein the temperature of the direct bonded copper element and / or the heatsink is increased up to a maximum operative temperature; a commissioning stage, wherein at each current pulse of a current pulses train sampled data are collected in a sampling period wherein the corresponding power semiconductor switching device connected with at least one of the power semiconductor diode devices is turned-off; an output stage, wherein the processor generates, from the sampled data, processed data for at least one of the power semiconductor diode devices.

The application discloses a hybrid AC-AC converter, comprising: an AC bus on the rectifier side, a converter transformer, a rectifier, an inverter, an AC bus on the inverter side, an AC filter and a DC filter; the rectifier is composed of a high-voltage valve group LCC and a low-voltage valve group MMC, the high-voltage valve group and the low-voltage valve group of the inverter are both in the form of half-bridge sub-module MMC, and a high-power diode valve D is connected in series at the DC outlet of the high-voltage valve group MMC; the rectifier side LCC adopts constant-current control based on the DC voltage of the rectifier side MMC, the rectifier side MMC adopts voltage amplitude-frequency control, and the inverter side MMC adopts constant DC voltage control and constant reactive power control. The application can realize low-frequency transmission of pure new energy power generation bases, well adapt to power fluctuation of the new energy power generation bases, fully utilize the technical maturity of the LCC and the MMC, and reduce engineering cost and power loss compared with a conventional AC-AC converter based on back-to-back MMC.

The utility model relates to the field of industrial electron accelerators, in particular to an anti-interference and adjusting device for a light-emitting photodiode. The device comprises a diode position adjusting plate, a power supply diode mounting plate, an anti-interference assembly and a base body. An active light-emitting diode and a loop photodiode are mounted on the diode position adjusting plate side by side; a photodiode and a loop light emitting diode are mounted on the power supply diode mounting plate side by side; the two anti-interference assemblies are respectively arranged on the diode position adjusting plate and the power supply diode mounting plate, the inner side is provided with an accommodating space, and the outer end is provided with an opening; the base body is provided with an adjusting assembly used for adjusting the position of the diode position adjusting plate. According to the utility model, the diodes can be shielded and protected through the anti-interference assembly, the light emitting interference of the mirror image loop light emitting diodes is prevented, and the diodes can be aligned and adjusted, so that the response accuracy of the diodes is ensured.

The application provides a JBS power diode based on self-assembled Ni nano-islands and a preparation method thereof. The structure of the diode comprises, from bottom to top, a cathode, an N+ substrate, a JBS structure and an anode, the JBS structure comprises an N-drift layer, a PN heterojunction and Ni nano-islands, wherein the N-drift layer is provided with a groove structure, a P-type metal oxide on the inner side and the bottom of the groove forms a PN heterojunction with the N-drift layer; the Ni nano-islands are located on the top of the groove and form a Schottky contact with the N-drift layer; the PN heterojunction is connected in parallel with the Schottky contact. The self-assembled nano-islands formed by the Ni film under rapid thermal annealing are used to replace photoresist as a mask, so that the photoetching step is omitted, the preparation process is greatly simplified, the preparation period is shortened, and the cost is saved.

The invention discloses a flyback power supply circuit based on a planar transformer, and belongs to the technical field of flyback power supplies. One end of an input capacitor Cin1 is connected with the positive electrode of an automobile low-voltage storage battery KL30, the other end of the input capacitor Cin1 is grounded, one end of a transformer primary winding Np of the planar transformer T1 is connected with the positive electrode of the automobile low-voltage storage battery KL30, and the other end of the transformer primary winding Np is connected with the drain electrode of a flyback power supply primary MOSFET Q1; the source electrode of the flyback power supply primary side MOSFET Q1 is grounded, the grid electrode of the flyback power supply primary side MOSFET Q1 is connected with the flyback power supply control chip Flyback IC 1, one end of a transformer auxiliary winding Na of the planar transformer T1 is connected with the anode of the feedback power supply diode Da1, and the other end of the transformer auxiliary winding Na is grounded; the cathode of the feedback power supply diode Da1 is connected with the anode of a feedback power supply filter capacitor Cfb1, and the cathode of the feedback power supply filter capacitor Cfb1 is grounded; the cathode of the feedback power supply diode Da1 and the anode of the feedback power supply filter capacitor Cfb1 are connected with the flyback power supply control chip Flyback IC 1; the planar transformer T1 is provided with a plurality of groups of secondary windings, and each group corresponds to one path of output. The invention has the advantages of low cost, small volume, high reliability and the like.

The invention relates to a low-voltage BMS circuit and system and a vehicle, and belongs to the technical field of vehicle-mounted energy storage, and the low-voltage BMS circuit is characterized in that the positive electrode of a battery cell module is connected to a generator and a complete machine load; the negative electrode of the battery cell module is connected to the power discharging NMOS module and the power charging NMOS module, and is connected to the positive electrodes of the two super capacitors which are connected in series through a unidirectional power diode; the negative electrode of the super capacitor is connected to the generator and the complete machine load through the charge and discharge load throwing switch NMOS and the charge and discharge load throwing NMOS driving circuit module; the voltage acquisition module is connected to the two super capacitors and is used for acquiring voltage values of the two super capacitors; and the MCU is used for controlling the opening and closing states of the charging load throwing switch NMOS and the discharging load throwing switch NMOS based on the voltage values of the two super capacitors. According to the invention, low-cost and reliable BMS protection can be realized.

The utility model relates to the technical field of superconducting magnet systems, in particular to a superconducting magnet energy release module with a temperature control cooling unit. A superconducting magnet energy release module with a temperature control cooling unit is characterized in that the top of the cooling unit is connected with an energy release unit, the energy release unit comprises an energy release unit shell and diodes, and at least one pair of high-power diodes is arranged in the energy release unit shell; the cooling unit comprises a radiator, a fan and a driver, the bottom of the shell of the energy release unit is connected with the top of the radiator through a plurality of bolts, a plurality of cooling fins are arranged in the radiator, the fan is connected below the radiator, and the fan is driven by the driver; and a temperature control switch is arranged on the radiator. Compared with the prior art, the energy release module is composed of the energy release unit and the cooling unit, the cooling unit is an air cooling system, work and stop can be selected according to the temperature of the energy release unit, the working time of the cooling unit is greatly shortened, and the reliability of the energy release module is improved.