90 results about "Power diode" patented technology

The utility model relates to the technical field of battery management, and discloses an ideal diode circuit and a battery management system, and the ideal diode circuit comprises a current collection module which is connected between the negative electrode of a battery interface and the negative electrode of a charging interface and is used for collecting current; one end of the operational amplifier module is connected between the cathode of the battery interface and the current acquisition module, and the other end of the operational amplifier module is connected between the current acquisition module and the cathode of the charging interface; the input end of the MOS driving module is connected with the operational amplification module and the current acquisition module, and the output end of the MOS driving module is connected with the negative electrode of the charging interface; wherein the operational amplification module amplifies and processes an acquisition signal of the current acquisition module, and controls the MOS driving module to act. By designing the current acquisition module, the operational amplification module and the MOS driving module, after the mode is adopted to replace a power diode, the occupied space is compact, and the overall design cost is low.

The invention discloses a power diode based on an MOF, a preparation method, a 3D chip packaging method and application, belongs to the technical field of electronic materials and power devices, and particularly relates to a composite structure based on an n-Si substrate / an (n-Si)-(ZIF-8) composite layer / an Ag layer, preparation, a 3D chip packaging method and application of the composite structure in the field of power devices. The reverse withstand voltage of the power diode based on the n-Si substrate / ''(n-Si)-(ZIF-8) composite layer'' / Ag layer composite structure exceeds 200V, the forward conduction voltage of the power diode is 0.25-1.5 V, the reverse bias voltage applied to the power diode is 0-200V, the reverse leakage current is basically not increased along with the increase of the reverse bias voltage, and the reverse leakage current is 0.2-2.1 mA (at the reverse voltage-100V). Compared with a conventional power diode based on an n-Si substrate / Ag layer Schottky structure, the performance of the power diode provided by the invention has the advantages that although the forward voltage is basically unchanged, the reverse voltage is increased by 80-400%, the reverse saturation current is reduced by 50-800%, and the highest yield reaches 95%.

The invention discloses an interlaced PFC circuit and a current sharing control method thereof. The interlaced PFC circuit comprises a rectifier bridge; a first PFC branch circuit and a second PFC branch circuit, the first PFC branch circuit and the second PFC branch circuit respectively comprise a power switch tube and a power diode, the anode of the power diode is connected with the drain electrode of the power switch tube and one output end of the rectifier bridge, and the source electrode of the power switch tube is connected with the other output end of the rectifier bridge; one end of the sampling resistor is connected with the source electrode of the power switch tube, and the other end of the sampling resistor is connected with the cathode of the power diode. According to the staggered PFC circuit, a current sampling error cannot be introduced due to the difference of hardware sampling channels, and no-difference control can be realized when the current of the two branches is in a steady state.

The invention relates to a direct current uninterruptible power supply system for an unmanned aerial vehicle, and solves the problems of unstable switching of a main power supply and a standby power supply, power supply interruption, large voltage fluctuation and the like in the prior art. Comprising a main generator, a standby generator, a lithium ion storage battery pack, a task bus bar, an uninterrupted bus bar and a power diode, a standby generator voltage gt; the voltage of the lithium ion storage battery pack is direct current voltage, the main generator is directly connected with the task bus bar to supply power to the task load and is connected with the uninterrupted bus bar through the power diode, the standby generator is connected with the uninterrupted bus bar through the power diode, and the lithium ion storage battery is connected with the uninterrupted bus bar through the power diode. According to the invention, the stability of the power supply is improved, the passive switching of the uninterrupted bus bar power supply is realized, and no controller or software fault risk exists. Meanwhile, the system reduces an electronic control unit, adapts to extreme environments such as plateaus and polar regions, and prolongs the service life of the lithium ion storage battery.

The application discloses a high-voltage and high-current power diode module, which comprises a bottom plate, a plurality of unit modules are arranged on the bottom plate, each unit module is composed of an upper unit and a lower unit, ceramic copper-clad plates are arranged in the upper unit and the lower unit, first areas and second areas are arranged on the ceramic copper-clad plates, a plurality of diode chips are mounted on the first areas, the plurality of diode chips are arranged in an array, the second areas are connected with the anodes of the diode chips through aluminum wires, the first areas in the upper unit and the lower unit are commonly connected with an anode power terminal, and the second areas in the upper unit and the lower unit are commonly connected with a cathode power terminal. The application has the advantages of high current-carrying capacity, high voltage resistance, compact module design structure, small size, excellent module heat dissipation and insulation performance.

The application discloses a low-onset-voltage gallium oxide power diode, and mainly solves the problems of high-onset-voltage and low-breakdown-voltage of the existing gallium oxide power diode. The gallium oxide power diode comprises a cathode (4), a substrate (1), a beta-Ga2O3 drift layer (2) and an anode (5) from bottom to top, and is characterized in that: a ferroelectric material PZT dielectric layer (3) formed by an outer circular ring and an inner circular ring is arranged between the beta-Ga2O3 drift layer and the anode, so that when a positive voltage is applied above the PZT, positive charges are generated at the anode interface, electrons are attracted and accumulated to reduce the onset voltage; when a negative voltage is applied above the PZT, negative charges are generated at the anode interface to form a high-resistance area, and the breakdown voltage of the device is improved. The ferroelectric material PZT dielectric layer (3) is a ferroelectric material PZT field ring formed by pulse laser deposition, photolithography and dry etching. The application can effectively reduce the onset voltage of the device, improve the breakdown voltage of the device, and can be used for rectifiers and direct current converters of power electronic systems.

The invention discloses a direct-current-bias-free high-power LED visible light signal transmission method and system, and relates to the technical field of optical communication, and the method comprises the steps: carrying out 64QAM-OFDM modulation and IQ modulation on original audio and video data, carrying out AC coupling peak-to-peak value extraction and DC component filtering, and then carrying out single-power-supply amplification and pre-equalization; and a driving positive voltage signal is generated to drive a high-power LED to emit light, and an optical communication signal is generated. Through a low-loss alternating-current coupling transmission mode, the modulated real signal peak-to-peak value is subjected to coupling transmission and single positive power supply amplification, so that the signal is changed into positive voltage to control the LED light intensity and form an LED optical communication signal, direct-current voltage does not need to be introduced into a digital domain, the problem of bandwidth reduction is avoided, and the signal transmission efficiency is improved. The direct-current bias voltage of the LED can be kept stable, the LED works in a linear modulation area, bandwidth expansion is carried out through the pre-equalization circuit, and the functions of LED illumination and high-speed communication can be considered.

The application discloses a wide-bandgap power diode with a periodic composite anode, which comprises, from bottom to top, a wide-bandgap semiconductor material substrate layer, a third anode groove, a wide-bandgap semiconductor material epitaxial layer, a periodic first anode groove and a second anode on the wide-bandgap semiconductor material epitaxial layer, a first dielectric layer and a second dielectric layer arranged on the first anode groove and the upper surface of the wide-bandgap semiconductor material epitaxial layer in sequence, the second dielectric layer arranged on the second anode groove and the upper surface of the wide-bandgap semiconductor material epitaxial layer, a third dielectric layer arranged on the third anode groove, and a metal anode and a metal cathode arranged on the upper surface of the wide-bandgap semiconductor material epitaxial layer and the lower surface of the wide-bandgap semiconductor material substrate layer respectively. The application has the performance advantages of high current density, high breakdown voltage, low on-resistance and low reverse leakage current due to the periodic composite anode structure.

This invention discloses a circuit for suppressing back electromotive force (EMF) in a wire-feeding motor, comprising: a protection filter circuit, a half-bridge circuit, a half-bridge drive circuit, and an overvoltage monitoring and braking circuit. The protection filter circuit is connected to the power bus to prevent backflow of EMF into the power bus and to perform filtering. The half-bridge circuit is connected to the protection filter circuit and an external motor. The half-bridge drive circuit is connected to the half-bridge circuit to drive the half-bridge circuit and drive the motor to rotate. The overvoltage monitoring and braking circuit is connected to the protection filter circuit and the half-bridge drive circuit to monitor the voltage of the power bus. When the voltage of the power bus is too high, it performs rapid discharge and simultaneously drives the motor to stop rotating through the half-bridge drive circuit. This invention fundamentally cuts off the path of backflow of the back EMF generated by the motor or inductive load to the power supply by connecting a power diode D1 in series on the bus and utilizing its unidirectional conductivity.

This utility model discloses a high-temperature resistant, high-safety, high-power diode, relating to the field of diode technology. This high-temperature resistant, high-safety, high-power diode, through the arrangement of a first protective shell, a second protective shell, a heat sink, a filter box, a cooling box, a water tank, a first mounting box, a second vent, a second filter plate, a fan, a cooling pipe, a first connection port, a second mounting box, a cooler, a connecting pipe, and a water pump, achieves rapid cooling of the diode body. The heat sink dissipates the heat emitted by the diode body into the surrounding air. The fan, when activated, draws the cooled gas from the cooling box into the first mounting box through the first connection port. The cooled gas in the first mounting box, after being dried and filtered by the second filter plate, enters the first and second protective shells to cool the diode body, improving the cooling efficiency and enabling rapid heat dissipation of the diode body.

The utility model belongs to diode packaging technical field, concretely relates to a plastic package integrated high -power diode. Its including bottom plate, plastic package body, chip group and terminal piece, the first recess is formed with bottom plate both sides, plastic package body sets up on bottom plate, and plastic package body both sides extend to with bottom plate bottom plane level along the first recess downward, chip group sets up between plastic package body and bottom plate, and chip group bottom plane is contacted with bottom plate, and chip group rest surface is contacted with plastic package body, and terminal piece first end is connected with chip group top surface, and second end extends to plastic package body outside through plastic package body. The utility model is used to solve the problem of high -power diode packaging heat conduction effect is not good. Chip group is covered in plastic package body, and chip group is contacted with bottom plate and plastic package body directly, utilizes plastic package body and bottom plate heat dissipation, and heat dissipation path is shortened, improves heat dissipation effect, and plastic package body can bear higher temperature, improves heat dissipation effect, and plastic package body and bottom plate one -off forming shorten the production flow, and improved production efficiency.

This utility model relates to the field of high-voltage electrical system technology, and particularly to a DC copper busbar with single-phase conduction function, comprising: an input copper busbar, an output copper busbar, a power diode, and an insulating material; the input and output copper busbars are arranged in parallel, and the two copper busbars have an overlapping area in a direction perpendicular to the plane of the copper busbars, with a predetermined gap between the input and output copper busbars in the overlapping area; the power diode is disposed within the gap in the overlapping area of ​​the input and output copper busbars, and its two ends are electrically connected to the input and output copper busbars respectively; the insulating material fills the remaining gaps outside the power diode in the overlapping area of ​​the input and output copper busbars. This utility model solves the problems of high cost, reliance on manual operation, and complex structure of existing anti-reverse protection measures.

A method is provided for characterizing junction temperatures of power diodes devices, each of the diode devices being one-to-one connected in antiparallel to each power semiconductor switching devices of a voltage source inverter having processing and measuring capability, the method including: an initialization stage, wherein a heater is thermally coupled with a heatsink and / or with a direct bonded copper element of the voltage source inverter; a temperature setting stage, wherein the temperature of the direct bonded copper element and / or the heatsink is increased up to a maximum operative temperature; a commissioning stage, wherein at each current pulse of a current pulses train sampled data are collected in a sampling period wherein the corresponding power semiconductor switching device connected with at least one of the power semiconductor diode devices is turned-off; an output stage, wherein the processor generates, from the sampled data, processed data for at least one of the power semiconductor diode devices.

The application discloses a hybrid AC-AC converter, comprising: an AC bus on the rectifier side, a converter transformer, a rectifier, an inverter, an AC bus on the inverter side, an AC filter and a DC filter; the rectifier is composed of a high-voltage valve group LCC and a low-voltage valve group MMC, the high-voltage valve group and the low-voltage valve group of the inverter are both in the form of half-bridge sub-module MMC, and a high-power diode valve D is connected in series at the DC outlet of the high-voltage valve group MMC; the rectifier side LCC adopts constant-current control based on the DC voltage of the rectifier side MMC, the rectifier side MMC adopts voltage amplitude-frequency control, and the inverter side MMC adopts constant DC voltage control and constant reactive power control. The application can realize low-frequency transmission of pure new energy power generation bases, well adapt to power fluctuation of the new energy power generation bases, fully utilize the technical maturity of the LCC and the MMC, and reduce engineering cost and power loss compared with a conventional AC-AC converter based on back-to-back MMC.

The application provides a JBS power diode based on self-assembled Ni nano-islands and a preparation method thereof. The structure of the diode comprises, from bottom to top, a cathode, an N+ substrate, a JBS structure and an anode, the JBS structure comprises an N-drift layer, a PN heterojunction and Ni nano-islands, wherein the N-drift layer is provided with a groove structure, a P-type metal oxide on the inner side and the bottom of the groove forms a PN heterojunction with the N-drift layer; the Ni nano-islands are located on the top of the groove and form a Schottky contact with the N-drift layer; the PN heterojunction is connected in parallel with the Schottky contact. The self-assembled nano-islands formed by the Ni film under rapid thermal annealing are used to replace photoresist as a mask, so that the photoetching step is omitted, the preparation process is greatly simplified, the preparation period is shortened, and the cost is saved.

The invention discloses a flyback power supply circuit based on a planar transformer, and belongs to the technical field of flyback power supplies. One end of an input capacitor Cin1 is connected with the positive electrode of an automobile low-voltage storage battery KL30, the other end of the input capacitor Cin1 is grounded, one end of a transformer primary winding Np of the planar transformer T1 is connected with the positive electrode of the automobile low-voltage storage battery KL30, and the other end of the transformer primary winding Np is connected with the drain electrode of a flyback power supply primary MOSFET Q1; the source electrode of the flyback power supply primary side MOSFET Q1 is grounded, the grid electrode of the flyback power supply primary side MOSFET Q1 is connected with the flyback power supply control chip Flyback IC 1, one end of a transformer auxiliary winding Na of the planar transformer T1 is connected with the anode of the feedback power supply diode Da1, and the other end of the transformer auxiliary winding Na is grounded; the cathode of the feedback power supply diode Da1 is connected with the anode of a feedback power supply filter capacitor Cfb1, and the cathode of the feedback power supply filter capacitor Cfb1 is grounded; the cathode of the feedback power supply diode Da1 and the anode of the feedback power supply filter capacitor Cfb1 are connected with the flyback power supply control chip Flyback IC 1; the planar transformer T1 is provided with a plurality of groups of secondary windings, and each group corresponds to one path of output. The invention has the advantages of low cost, small volume, high reliability and the like.

The invention relates to a low-voltage BMS circuit and system and a vehicle, and belongs to the technical field of vehicle-mounted energy storage, and the low-voltage BMS circuit is characterized in that the positive electrode of a battery cell module is connected to a generator and a complete machine load; the negative electrode of the battery cell module is connected to the power discharging NMOS module and the power charging NMOS module, and is connected to the positive electrodes of the two super capacitors which are connected in series through a unidirectional power diode; the negative electrode of the super capacitor is connected to the generator and the complete machine load through the charge and discharge load throwing switch NMOS and the charge and discharge load throwing NMOS driving circuit module; the voltage acquisition module is connected to the two super capacitors and is used for acquiring voltage values of the two super capacitors; and the MCU is used for controlling the opening and closing states of the charging load throwing switch NMOS and the discharging load throwing switch NMOS based on the voltage values of the two super capacitors. According to the invention, low-cost and reliable BMS protection can be realized.

The present disclosure relates to a system for performing an Additive Manufacturing (AM) fabrication process on a powdered material, deposited as a powder bed and forming a substrate. The system makes use of a laser for generating a laser beam, and an optical subsystem. The optical subsystem is configured to receive the laser beam and to generate an optical signal comprised of electromagnetic radiation sufficient to melt or sinter the powdered material. The optical subsystem uses a digitally controlled mask configured to pattern the optical signal as needed to melt select portions of a layer of the powdered material to form a layer of a 3D part. A power supply and at least one processor are also included for generating a plurality of different power density levels selectable based on a specific material composition and a known absorptivity of the powder particles. The powdered material is used to form the 3D part in a sequential layer-by-layer additive manufacturing process.

The invention provides a single-stage bridgeless conversion device integrating a Buck-Boost circuit and a half-bridge LCC circuit. The single-stage bridgeless conversion device is characterized by comprising the bridgeless Buck-Boost circuit and the half-bridge LCC circuit, the Buck-Boost circuit comprises three switching tubes Q1, Q2 and Q3, and one of the switching tubes Q3 is multiplexed as an upper tube of the half-bridge LCC circuit. According to the single-stage bridgeless conversion device integrating the Buck-Boost circuit and the half-bridge LCC circuit, the voltage stress of the MOS tube Q3 can be obviously reduced, and the stress of the added MOS tubes Q1 and Q2 is equal to the input voltage, so that the type selection of the MOS tubes is more favorable, a 500V MOS tube with high cost performance can be selected, and two power diodes are reduced in a main loop, so that the cost of a power semiconductor device can be reduced. Meanwhile, the working principle of the LCC circuit part is completely the same as that of a conventional LCC circuit, the Q3 and the Q4 can realize ZVS within a certain range, the secondary side rectifier diode realizes ZCS, obvious advantages in thermal design and efficiency are achieved, and product development in practical application is more convenient.

Method for processing a power diode (1) comprising the following: - Providing a semiconductor body (10); - Generating an anode region (102) and a drift region (100) in the semiconductor body (10), wherein the anode region (102) comprises an anode body zone (1023) adjacent to the drift region (100); - Forming both an anode contact zone (1021) and an anode damage zone (1022) in the anode region (102) by a single ion implantation process step, which is followed by a temperature healing process step, wherein: (i) defects caused by the implanted ions can only be partially healed, (ii) the anode damage zone (1022) is formed between the anode contact zone (1021) and the anode body zone (1023); and (iii) the only ion implantation process step is performed with an implantation energy of less than 20 keV.

The application provides a kind of switch reluctance motor drive system multi-fault diagnosis method based on current behavior, belong to motor drive system fault diagnosis field.The method reselects the installation position of the three current sensors inherent to motor without increasing the number of sensors, by changing the measurement path of each sensor and the number of measurement current branches, accurately reconstructing the three-phase current value, after the occurrence of fault, the monitoring current value of the corresponding device and the theoretical current value appear larger deviation, by analyzing this current deviation behavior, the rapid diagnosis and positioning of the multiple component faults of switch reluctance motor drive system can be realized, including current sensor fault, winding open circuit fault, power diode open circuit fault and switch tube open circuit short circuit mixed fault, greatly facilitate the monitoring of the health status of switch reluctance motor drive system.

The present invention provides a semiconductor structure having an oxide epitaxial layer with a large bandgap energy, and a method for forming such a structure. [Solution] The semiconductor structure is (Al x Ga 1-x ) y O z The semiconductor structure includes an epitaxial oxide material such as (wherein 0≦x≦1, 1≦y≦3, and 2≦z≦4). The semiconductor structure may include one or more superlattices containing the epitaxial oxide material. The semiconductor structure may include one or more doped superlattices including a host layer and an impurity layer, the host layer containing the epitaxial oxide material. The semiconductor structure may include one or more gradient layers or regions containing the epitaxial oxide material. The semiconductor structure may be part of a semiconductor device such as an optoelectronic device, light-emitting diode, laser diode, photodetector, solar cell, high-power diode, high-power transistor, transducer, or high-electron-mobility transistor.

The present invention provides a single-stage bridgeless conversion device integrating a Buck-Boost circuit and a full-bridge LCC circuit, the single-stage bridgeless conversion device comprising a bridgeless Buck-Boost circuit and a full-bridge LCC circuit. The Buck-Boost circuit comprises three switching transistors Q1, Q2 and Q3, wherein one of the switching transistors, i.e. Q3, is reused as a high-side transistor of the full-bridge LCC circuit. The provision of the three MOS transistors in the Buck-Boost circuit allows one of the MOS transistors to be reused as the high-side transistor Q3 of the LCC circuit; the MOS transistors Q1 and Q2 are used as input rectifying MOS transistors to replace diodes, such that the loss can be obviously reduced and the efficiency can be improved; in addition, the voltage stress is equal to an input voltage, such that cost-effective 500 V MOS transistors can be selected; moreover, two power diodes are omitted in a main circuit, and the full-bridge LCC can achieve higher power output, thus making the application range wider.

A single-stage conversion device integrating a Buck-Boost circuit and a full-bridge LLC circuit. Said device comprises a Buck-Boost circuit and a full-bridge LLC circuit; and the Buck-Boost circuit comprises two switching transistors Q1 and Q2, the switching transistor Q2 being multiplexed as an upper transistor of the full-bridge LLC circuit. The voltage stress of the switching transistor Q2 of said device is significantly reduced, and the stress of the switching transistor Q1 is equal to an input voltage, and therefore, the type selection of the switching transistors is more facilitated, a 500V MOS transistor which is highly cost-effective can be selected, two power diodes are eliminated in a main loop, and the full-bridge LLC circuit can achieve higher power output, thus achieving a wider application range. Additionally, the working principle of the full-bridge LLC circuit is the same as that of conventional full-bridge LLC circuits, and the switching transistors can achieve zero-voltage switching within a full-load range, thus achieving obvious advantages in thermal design and efficiency, and facilitating product development in practical applications.

The application provides a high-efficiency energy-saving TIG welding power supply system for field operation, and belongs to the technical field of welding. The system comprises a PFC+DC / DC circuit, a super capacitor, a full-bridge inverter circuit, a current detection circuit, a voltage detection circuit and an interactive interface. The system adopts a high-density super capacitor group energy storage module to provide energy for GTAW, and realizes GTAW welding in a field environment without electricity or a small space with difficult power supply. The system adopts a SiC mosfet full-bridge topology to regulate current, and a PFC power factor correction circuit to suppress current pulse amplitude. The system realizes energy saving in the switching process through a new SiC mosfet and a SiC power diode, and reduces energy loss in the switching process of the switching tube.

The application relates to a household appliance power supply. The household appliance power supply comprises a power factor correction circuit and a flyback power supply circuit; the power factor correction circuit is used for adjusting a rectified voltage after bridge rectification into a bus input voltage; the power factor correction circuit comprises a power diode, a filter capacitor and a power factor correction switch tube; the flyback power supply circuit comprises a high-frequency transformer, a first rectifier diode, a second rectifier diode, a third rectifier diode, a first filter capacitor, a second filter capacitor and a third filter capacitor. The household appliance power supply provided by the application can save the power factor correction circuit inductance by combining the primary inductance of the high-frequency transformer and the power factor correction inductance, reduce the area of the PCB, and thus reduce the cost of the controller.

The invention relates to a gallium oxide power diode with a junction termination extension and groove composite terminal structure and a preparation method thereof. The gallium oxide power diode comprises a cathode metal layer, a highly-doped n-type semiconductor substrate, a lowly-doped n-type gallium oxide epitaxial layer, a p-type semiconductor layer, an anode metal layer and a passivation layer which are sequentially stacked from bottom to top, wherein the upper surface of the low-doped n-type gallium oxide epitaxial layer is provided with a groove; the p-type semiconductor layer is arranged on the low-doped n-type gallium oxide epitaxial layer and transversely extends to cover part of the upper surface of the low-doped n-type gallium oxide epitaxial layer, and the p-type semiconductor layer covers the side wall and the groove bottom of the groove when transversely extending, so that a junction terminal extension and groove composite terminal structure is formed; the anode metal layer is arranged above the p-type semiconductor layer; and the passivation layer covers the upper surfaces of part of the low-doped n-type gallium oxide epitaxial layer, the p-type semiconductor layer and the anode metal layer. The gallium oxide power diode can realize high breakdown voltage and high terminal area utilization efficiency.

An over-temperature protection method and device based on IGBT leakage current are characterized in that a sampling branch formed by connecting a power diode and a precision sensing resistor in parallel is arranged in an IGBT blocking voltage channel, and the leakage current is sampled and converted into a voltage signal in a turn-off blocking state; isolating, conditioning and digitizing the signal, and synchronously acquiring bus voltage, load current and PWM (Pulse-Width Modulation) state; opening a steady-state sampling window after dynamic delay according to a PWM turn-off edge, and extracting a steady-state leakage current value through filtering; performing nonlinear compensation on the leakage current based on the bus voltage; estimating a real-time junction temperature and a change trend thereof according to a preset mapping relation between the compensated leakage current and the junction temperature; and finally, executing multi-level threshold judgment according to the junction temperature value, the change rate and the trend, and outputting a corresponding hierarchical protection instruction. According to the invention, a temperature sensor does not need to be additionally arranged, the sensitivity of the leakage current to the junction temperature is fully utilized, rapid online monitoring and grading protection of the IGBT junction temperature are realized, and the method has the advantages of rapid response, low cost and high reliability.

The invention belongs to the technical field of storage battery charging, and discloses a storage battery constant-current and constant-voltage charging method based on solar battery I-V curve characteristics, which comprises the following steps of: determining charging parameters of a storage battery; calculating the number of solar cells connected in series according to the target constant voltage value and the bus voltage to form solar cell strings, and then calculating the number of solar cell strings connected in parallel according to the target constant current value to complete series-parallel combination of the solar cell strings, so that the output voltage and current of the solar cells meet the constant-current and constant-voltage charging requirements of a storage battery; the positive end of each solar cell string is connected with the V-MOS tube, the negative end is connected with the negative end of the bus, the output end of the V-MOS tube is connected with the cathode of the power diode, the anode of each power diode is electrically connected to the anode of the storage battery, and the cathode of the storage battery is connected with the negative end of the bus to form a closed charging loop. By utilizing the I-V curve characteristic of the solar battery, through series-parallel combination and selective access, constant-current and constant-voltage charging of the storage battery is realized, the circuit is simplified, and the efficiency is improved.