92 results about "Waveguide amplifier" patented technology

A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.

The present invention is an optical coupler comprising a plurality of optical fibers that have unclad (core-exposed) ends and tapered cladding regions extending to cladded ends. The core-exposed ends are arranged in a bundle, and the cladded ends can be arranged as needed. The optical coupler can efficiently couple between waveguides of different core areas and shapes. For example, it may be used to connect a multimode collection fiber having a core area of greater than 50 .mu.m to a planar waveguide amplifier having waveguide strips with heights of 5 .mu.m or less.

The invention belongs to the technical field of polymer optical waveguide amplifier manufacturing and particularly relates to a method for manufacturing an organic polymer flexible optical waveguide amplifier by ultraviolet nanoimprint lithography. The method includes spin coating a polymer bottomcladding material on a silicon or polymer template which is high-precision and has a projecting waveguide pattern, performing ultraviolet nanoimprint curing, spin coating a soluble complex material core material with an obtained thin film which has polymer grooves to serve as a substrate, performing vacuum drying, then spin coating a polymer topcladding material, and obtaining the polymer waveguide amplifier after ultraviolet curing. According to the organic polymer optical waveguide amplifier and the manufacturing method thereof, not only is the refractivity of the polymer core material and the polymer cladding materials easily controlled, but also thickness of each layer of materials is easily controlled. The organic polymer optical waveguide amplifier is low in cost, finished product rate is high, the accuracy is high, and the organic polymer optical waveguide amplifier is suitable for mass production.

The present invention provides methods and apparatuses for controlling a gain of an optical fiber amplifier. Gain circuitry operates in an opened loop configuration and uses a predetermined function relating a power variation of at least one wavelength region with a pump power adjustment for at least one optical pump. Two approximate linear relationships between the input signal power variations and the required pump power adjustments are utilized in controlling the Raman fiber amplifier. Each approximate linear relationship includes at least one linear coefficient that relates a power variation for a specific wavelength region and a power adjustment of a specific Raman pump. The dynamic gain control technique is applicable to an Erbium-doped fiber/waveguide amplifier. Also, a dynamic gain control technique controls a backward-pumped Raman amplifier, in which the power variation is determined at one geographical location and the optical pumps are controlled at another geographical location.

An optical amplifier with integrated optical waveguide, pump source and other, optional components for amplifying an input optical signal. The amplifier includes a circulator and an optical signal reflective surface disposed at an end opposite an optical signal input receiving end of the waveguide which enables an optical signal to pass through the waveguide a second time exposing the optical signal to further amplification. The disclosed amplifier offers cost advantages and a higher gain without sacrificing other performance characteristics.

Electroluminescent waveguide amplifier and methods for amplifying optical data signals in a fiber optical telecommunications system to achieve signal enhancement that compensates for losses incurred by attenuation, optical splitting, and routing through the optical communication system. The waveguide amplifier (30) includes an electroluminescent active layer (38) having a host medium doped with luminescent dopant atoms capable of amplifying a propagating optical data signal (45) by stimulated emission of photons (41). Confining and insulating cladding layers (36, 40) surround the active layer (38) and confine the propagating optical data signals (45) being amplified to the active layer (38) and cladding layers (36, 40).

A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics.

The invention is applicable to the technical field of amplifiers and provides a dielectric-free high-frequency extensible-broadband high-performance waveguide amplifier. The waveguide amplifier comprises an upper cavity, sheets and a lower cavity which are integrated, wherein the sheets are positioned between the upper cavity and the lower cavity. A metal ridge is formed on wide sides of the lower cavity, and the metal ridge and the sheets form an imbalance-to-balance conversion structure, so that conversion from a waveguide field mode to a coplanar waveguide field mode is achieved. The waveguide amplifier has the advantages that bad influences such as dielectric loss, resonance and the like caused by dielectric substrates can be eliminated completely, performances of the millimeter wave amplifier designed based on a circuit are improved greatly, and particularly, the higher the frequency is, the more obvious the advantages displayed by the amplification circuit are.

A preparing process of optical waveguide of phosphate glass, containing two steps. First, melting phosphate glass with erbium. Second, preparing optical waveguide using the glass by the way of ion exchange. The chemistry proerty of it is stability. It contains good surface optical quality in the process of ion exchange. Surface of optical waveguide refractive index delta n is 0.005-0.04. Transmit loss of wave-guide is under 1dB/cm. Waveguide laser and orthoron made from the glass is valuable of application in the field of telecommunication.

The present invention provides methods and apparatuses for controlling a gain of an optical fiber amplifier. Gain circuitry operates in an opened loop configuration and uses a predetermined function relating a power variation of at least one wavelength region with a pump power adjustment for at least one optical pump. Two approximate linear relationships between the input signal power variations and the required pump power adjustments are utilized in controlling the Raman fiber amplifier. Each approximate linear relationship includes at least one linear coefficient that relates a power variation for a specific wavelength region and a power adjustment of a specific Raman pump. The dynamic gain control technique is applicable to an Erbium-doped fiber/waveguide amplifier. Also, a dynamic gain control technique controls a backward-pumped Raman amplifier, in which the power variation is determined at one geographical location and the optical pumps are controlled at another geographical location.

The invention provides a preparation method of an erbium-doped lithium niobate optical waveguide amplifier. The method is that erbium-doped lithium niobate is used as a gain medium; the phosphonium ion irradiation method is carried out; an optical waveguide structure is manufactured on the surface of an erbium-doped lithium niobate crystal; two end surfaces of the optical waveguide are plated with films; specific wavelength is selected to amplify an optical signal; meanwhile, pumping light and signal light are coupled into the optical waveguide, so as to amplify the optical signal.

The invention relates to a method for synthesizing an ultraviolet-writable fluorine-containing erbium-containing polymer waveguide amplifier material and belongs to the field of synthesis of polymer near-infrared light-emitting materials. According to the method, a fluorine-containing active monomer containing an olefin double bond and an epoxy group, an erbium-containing complex and epoxypropyl methacrylate are subjected to ternary polymerization to prepare a fluorine-containing erbium-containing polymer near-infrared light-emitting material so that the compounding of an erbium ion and the polymer at the molecular level is achieved and the fluorescence quenching caused by uneven concentration of a rare earth complex due to phase separation generated by uneven doping is avoided. Polymer optical waveguide amplifier micro-patterns with stripe structures are prepared by carrying out lithography development on a polymer film obtained by a spin coating through a direct ultraviolet-writing technology, compared with the traditional process, copying processes such as evaporating a metal film layer and ion etching are not needed and thus the process steps are reduced and meanwhile, the cost is decreased and the method is an advantageous method for producing a polymer waveguide amplifier.

The invention relates to a strip-shaped optical waveguide amplifier by adopting a novel organic polymer material as an optical waveguide envelope, and adopting an organic-inorganic hybrid material doped with LaF3: Er, Yb nano-particles which are modified by an oleic acid surface as a sandwich layer, as well as the preparation method thereof. The optical waveguide amplifier is composed of a silicon substrate, a lower envelope, the sandwich layer and an upper envelope, wherein the lower envelope and the upper envelope adopt the novel organic polymer material; the sandwich layer adopts the organic-inorganic hybrid material doped with the LaF3:Er, Yb nano-particles which are modified by the oleic acid surface; the refractive index of the sandwich layer is larger than the refractive index of the lower envelope and the upper envelope; a plurality of strip-shaped waveguide grooves are formed on the lower envelope; the strip-shaped waveguide grooves are filled with the organic-inorganic composite materials of the sandwich layer, so as to form a buried structure. The method for making the optical waveguide amplifier is simple; the refractive index difference between the polymer sandwich layer and the envelope material is easy to control; and the thickness of each layer of material is easy to control. The optical waveguide amplifier has the advantages of low cost, good gain performance and high yield, and is suitable for mass production.

The invention provides a method used for preparing erbium-doped hybridization SiO2 optical waveguide amplifier by direct writing of ultraviolet. The method of the invention is characterized by comprising the steps as follows: step 1: a thermal oxidation method is used for generating a lower wrapping layer on a single-crystal Si underlay; step 2: an organic/inorganic hybridized sol-gel method is used to prepare the erbium-doped photosensitive SiO2 material; step 3: the photosensitive hybridized SiO2 film is rotatablely coated on the lower wrapping layer and taken as a core layer; step 4: front baking and solidifying operations are carried out; step 5: the exposure is carried out by using the ultraviolet to pass through a mask; device patterns are directly copied to the core layer; step 6: developing and rear baking operations are carried out so as to obtain the bar-shaped erbium-doped waveguide amplifier.

The invention discloses a manufacturing method for a waveguide amplifier with an erbium-doped tantalum oxide ridge structure. The amplifier made by the method comprises a substrate, a silica lower cladding, an erbium-doped lithium niobate film layer, a silica buffer layer, an erbium-doped tantalum oxide ridge waveguide structure, and a silica upper cladding. A silicon substrate lithium niobate film is used as a chip. The erbium-doped tantalum oxide whose refractive index is close to the refractive index of the lithium niobate is used as the ridge structure. In a communication band, through amplification effect of erbium ions, optical loss caused by processes of optical transmission and modulation can be made up. Compared with a dry etching technology, the manufactured ridge structure is low in process cost, and high in finished product rate, and stability of a device is improved. The manufacturing method is advantaged by simple manufacturing process, small device dimensions, small bending radius, and good stability.

The present invention relates to a input light signal waveguide amplifier which is comprised of silica or silica-related material co-doped with silicon nanoclusters and rare earth elements, and more particularly, to a pumping light h 100 waveguide amplifier with higher efficiency enhanced by top-pumping method and focusing means for pumping light. The waveguide amplifier of the present invention comprises of: (a) a substrate; (b) an optical waveguide including: a lower cladding layer formed on the substrate; a core layer which is made of silica or silica-related material co-doped with silicon nanoclusters and rare earth elements on the lower cladding layer and has a refractive index higher than that of the lower cladding; and an upper cladding layer formed on the core layer; and (c) a light source, spaced apart from the waveguide, for optically pumping the waveguide, wherein the waveguide amplifier operates by exciting the rare earth elements through electron-hole combinations in the silicon nanoclusters.

The invention discloses a rare earth ion-doped bismuth oxychloride semiconductor material and a preparation method thereof, belonging to the technical field of light-emitting materials. The general formula of the semiconductor material is Bi0.89Ho0.01Yb0.1NdxOCl, wherein X is equal to 0-0.03, and x is more than or equal to 0 and less than or equal to 0.03. The preparation method comprises the steps of mixing the raw materials of KCl, Nd2O3, Yb2O3, Ho2O3, Bi(NO)3-5H2O and deionized water, and preparing halogen bismuth oxide semiconductor fluorescent powder doped with several rare earth ions byvirtue of a hydrothermal method. The halogen bismuth oxide semiconductor fluorescent powder prepared by virtue of the preparation method has stable physical and chemical properties, the preparation method is simple and low in raw material cost, the halogen bismuth oxide semiconductor fluorescent powder has excellent up-conversion luminescence performance and an adjustable color and further has potential application values in the fields of fluorescent lamps, optical waveguide amplifiers and the like.