19 results about "Waveguide amplifier" patented technology

The invention relates to a thin film lithium niobate-based heterogeneous integrated optical waveguide amplifier chip and a preparation method thereof, the thin film lithium niobate-based heterogeneous integrated optical waveguide amplifier chip comprises a silicon substrate layer, a lower cladding layer, a thin film lithium niobate waveguide layer, an interval cladding layer and a rare earth ion doped gain thin film layer which are sequentially stacked from bottom to top, and the interval cladding layer extends to the lower cladding layer; and the thin-film lithium niobate waveguide layer is coated by the interval cladding. The heterogeneous integrated optical waveguide amplifier chip comprises a thin film lithium niobate (TFLN) waveguide layer and a rare earth ion doped gain thin film layer on the top of the TFLN waveguide layer, and an interval wrapping layer is arranged between the TFLN waveguide layer and the rare earth ion doped gain thin film layer for separation. Wherein the rare earth ion doped gain thin film layer provides optical gain, the TFLN waveguide layer can realize mode constraint, most optical modes can be switched between the rare earth ion doped gain thin film layer and the TFLN waveguide layer only by changing the width of a TFLN strip-shaped waveguide, and high-performance broadband amplification is realized. The photonic integrated circuit has the advantages of wide gain bandwidth, high gain efficiency and good compatibility with the existing photonic integrated circuit.

The invention relates to an erbium-doped thin film lithium niobate heterogeneous integrated optical waveguide amplifier and a preparation method thereof, the optical waveguide amplifier comprises a substrate layer, a silicon dioxide buried oxide layer, an erbium-doped thin film lithium niobate layer, a silicon-rich silicon nitride layer and an upper cladding layer which are sequentially stacked from bottom to top, and the erbium-doped thin film lithium niobate layer and the silicon-rich silicon nitride layer form a composite waveguide. By regulating and controlling the width of the silicon-rich silicon nitride waveguide, the high-power optical waveguide amplifier with a single mode and a large mode volume can be realized, and the multi-mode crosstalk effect can be effectively inhibited. The invention further discloses a preparation method of the erbium-doped thin film lithium niobate heterogeneous integrated optical waveguide amplifier. According to the preparation method of the waveguide amplifier, the silicon-rich silicon nitride waveguide only needs to be etched through single-step exposure, and the problems of etching loss and process consistency existing in the currently reported preparation process of the thin-film lithium niobate optical waveguide amplifier are effectively solved. The scheme provided by the invention has remarkable advantages in the aspects of manufacturing cost, process stability and gain performance of the optical waveguide amplifier.

The application discloses a kind of optical amplifiers based on double-clad doped erbium LiNbO3 waveguide, including double-clad doped erbium LiNbO3 optical amplification waveguide and multimode combiner at its both ends. The design of two-way pumping is used, so that 980nm pumping light is injected from the multimode beam splitter at both ends and converges with 1550nm signal light, to produce stimulated radiation to realize the amplification of signal light power. The structure increases the coupling-in waveguide pump energy through cladding, improves the overlap area of waveguide mode field, and significantly improves the pump efficiency. The total pump energy is improved by multimode transmission mode, so as to improve the overall gain and output power. The doped erbium waveguide amplifier of the application has the advantages of high pump light coupling efficiency and high gain, and has wide application prospect in the field of integrated optoelectronics and optical communication.

A planar waveguide amplifier includes a planar waveguide including a flat plate-like core; a first cladding provided on a first principal face of the core; and a second cladding provided on a second principal face of the core, and signal light and pumping light travel into the planar waveguide so that the signal light and the pumping light propagate inside the core in such a manner that optical paths of the signal light and the pumping light overlap each other, and in a zig-zag manner, and the core is an amplification medium containing a rare-earth element serving as an active ion of a three-level system, and absorbs the signal light on the basis of a reduction in intensity of the pumping light.

This invention discloses a laser alarm, comprising an optical receiving system, an optical scanning system, an optical switch, an optical amplification system, a wavelength division detection system, and a signal processing system. The optical system receives incoming laser light and transmits it to the optical scanning system. The optical scanning system uses a micro-mirror to perform the scanning. After passing through the optical switch, visible light signals directly enter the wavelength division detection system, while near-infrared light signals are amplified before entering the system. In this design, the optical switch, optical amplification system, and wavelength division detection system are integrated onto a single silicon photonic chip, including a silicon-based waveguide switch, a silicon-based waveguide amplifier, an arrayed waveguide grating, and a silicon-based photodetector. The signal processing system is connected to the micro-mirror chip and the silicon-based photodetector acquisition card. This invention achieves miniaturization of the laser alarm, enabling rapid detection of threatening laser signals and acquisition of laser azimuth and wavelength information, with high directional accuracy and a low false alarm rate.

A system and methods for low noise multi-channel optical signal amplification using an optical parametric amplifier are described. A waveguide etched into a ϰ(2) nonlinear optical material, such as thin film lithium niobate (TFLN), provides confined optical parametric amplification using a pump laser to amplify multi-channel optical signals of lower energy. Noise and crosstalk between channels within the OPA waveguide amplifier can be reduced if the OPA waveguide physical dimensions, along with the optical properties of the waveguide material, are adjusted to create a group velocity mismatch (GVM) between the propagating pump light and the amplified signal channels. OPA waveguide designs with larger GVM reduces crosstalk between modes in the waveguide, reducing noise, as measured by the error vector magnitude (EVM), and improving signal fidelity for the amplified optical signals.

This invention provides an optical waveguide amplifier and a method for fabricating it. The optical waveguide amplifier includes a substrate layer, an insulating layer, a passive waveguide layer, and multiple doped layers. The insulating layers are stacked on the substrate layer. The passive waveguide layer and the multiple doped layers are stacked on the insulating layer. An m-layer doped layer is disposed above the passive waveguide layer, and an n-layer doped layer is disposed below it, where m and n are integers, m+n≥2, and m≥0, n≥0. The multiple doped layers are doped with various rare-earth ions. Compared to fiber amplifiers doped with rare-earth elements, the optical waveguide amplifier in this embodiment is smaller, which simplifies the device structure, reduces device size, and lowers costs. Compared to existing on-chip optical waveguide amplifiers, the optical waveguide amplifier in this embodiment can be doped with various rare-earth ions, enabling the amplification of broadband signals and broadening its applicability.

The invention discloses a C-waveband-oriented erbium-doped AlN optical waveguide amplifier and a preparation method thereof, and relates to the technical field of photonic devices. The amplifier comprises a substrate layer, a buried oxide layer, an erbium-doped aluminum nitride waveguide layer and a silicon dioxide coating layer which are sequentially arranged from bottom to top, wherein the erbium-doped aluminum nitride waveguide layer is a strip-shaped waveguide, and the crystal axis orientation is height c-axis orientation. The problem that the luminous efficiency is low due to the temperature quenching effect of an erbium-doped semiconductor material used by an existing optical waveguide amplifier can be solved, and a feasible scheme is provided for achieving the large-scale, integratable and high-gain optical waveguide amplifier.

A photonic circuit Ti: sapphire optical amplifier is provided. Critical aspects of the technique include near perfect mode overlap between the signal and the pump in the amplifier waveguide, and low loss wavelength division multiplexing techniques for separating / combining the signal and the pump. Applications include various amplifier configurations, narrow linewidth photonic circuit lasers, and photonic circuit incoherent amplified spontaneous emission sources.

A tunable microwave source based on dual-wavelength lasing of a single optical whispering gallery microcavity includes a dual-wavelength laser having the single optical whispering gallery microcavity for generating dual-wavelength lasing with adjustable spacing, narrow linewidth and low threshold; an optical fiber or waveguide amplifier for optical signal amplification; an optical filter for optical signal and noise filtration; and a high-speed detector for generating a tunable microwave signal with narrow bandwidth. The dual-wavelength laser includes a pump source, the optical whispering gallery microcavity, an optical waveguide or a tapered optical fiber, a microcavity substrate, and a gold electrode pair. The frequency spacing of the dual-wavelength lasing is tuned by adjusting the external voltage of the gold electrode pair.

Laser amplifier system, including: a waveguide area (A) with a waveguide (10) for guiding laser radiation; an amplifier section (B) with an amplifier (20), wherein the amplifier section (B) is configured such that the laser radiation from a first end (A1) of the waveguide (10) is coupled into an input side (B1) of the amplifier (20); and an intermediate region (C) between the first end (A1) of the waveguide (10) and the input side (B1) of the amplifier (20), wherein the intermediate region (C) is configured to provide a variable thermal lens (30) for controllable adaptation of the laser radiation coupled into the amplifier (20); wherein the provision of the variable thermal lens (30) is effected by optical heating of the intermediate area (C) or the intermediate area (C) for the provision of the variable thermal lens (30) by electrical heating of the intermediate area (C) comprises an ohmic resistance element (32) applied to the intermediate area (C) as a means for local heating of the intermediate area (C).

An optical device comprises a Praseodymium (Pr)-dope waveguide optical amplifier capable of amplifying O-band light. The waveguide optical amplifier may be formed on the substrate (e.g., silicone or glass) and comprises a core defining an optical path through the waveguide optical amplifier, and cladding abutting at least one side of the core. The core comprises a silicon-based material, such as silicon nitride (Si3N4), doped with Praseodymium (Pr) such that, on condition of pump light and O-band signal light being passed through the waveguide optical amplifier, the waveguide optical amplifier amplifies the O-band signal light.

The invention discloses an erbium-ytterbium co-doped polymer optical waveguide amplifier based on a silicon nitride platform and a preparation method thereof, and belongs to the technical field of optical waveguide amplifiers. The erbium-ytterbium co-doped polymer gain-enhanced silicon nitride waveguide consists of a silicon substrate, a silicon dioxide lower cladding, a silicon nitride waveguide core layer, an erbium-ytterbium co-doped polymer gain layer and a polymethyl methacrylate upper cladding from bottom to top in sequence, in the signal light input direction, the silicon nitride waveguide core layer is composed of an input end strip-shaped transmission waveguide, an input end conical waveguide, a strip-shaped transmission waveguide, an output end conical waveguide and an output end strip-shaped transmission waveguide which are sequentially connected and share a central axis structure. And the input end conical waveguide, the strip-shaped transmission waveguide and the output end conical waveguide are jointly coated in the erbium-ytterbium co-doped polymer gain layer to form an amplification region. The polymer optical waveguide amplifier can effectively realize on-chip amplification of signal light on a silicon nitride platform, has the characteristics of simple process, low cost and high integration degree with a silicon-based optical device, and is expected to play a greater role in photon integration on the silicon nitride platform.

The application discloses an on-chip optical waveguide amplifier integrated with wide communication wavebands, and belongs to the technical field of optical communication. The amplifier comprises an input module, an optical detection module, a pumping laser module, a coupling module, an amplification module and an output module which are integrated on the same substrate. The input module demultiplexes input wide-band light into signal light of several different communication wavebands. The optical detection module detects whether the signal light exists. The pumping laser module generates pumping light signals of corresponding wavelengths when the signal light is detected. The coupling module couples the pumping light signals of each communication waveband with corresponding signal light. The amplification module amplifies the coupled signal light. The output module couples the amplified signal light of several different communication wavebands and transmits the signal light into an output optical fiber. The application realizes integrated optical amplification of wide communication wavebands, and has the advantages of compact structure and high integration.

The application provides a waveguide amplifier, a preparation method of the waveguide amplifier and an optical signal amplification system. The waveguide amplifier comprises a substrate layer, at least two support structures arranged at intervals along the width direction of the substrate layer on the upper surface of the substrate layer and extending along the length direction of the substrate layer, an air groove formed between two adjacent support structures, at least one waveguide core region arranged above the corresponding air groove, and a rare earth doped gain layer comprising a first rare earth doped gain layer and a second rare earth doped gain layer. The first rare earth doped gain layer is deposited on the lower surface of the waveguide core region, and the second rare earth doped gain layer is deposited on the upper surface of the waveguide core region. The technical scheme of the application can effectively improve the optical gain provided by the waveguide amplifier, thereby guaranteeing the intensity and quality of the optical signal.

The invention discloses a silicon-based external cavity laser integrated with an on-chip erbium-doped optical waveguide amplifier. The silicon-based external cavity laser comprises a silicon-based external cavity laser body and the erbium-doped optical waveguide amplifier. The silicon-based external cavity laser is used for generating signal light and outputting the signal light into the erbium-doped optical waveguide amplifier; the erbium-doped optical waveguide amplifier receives signal light output by the silicon-based external cavity laser, and the signal light and pump light input into the erbium-doped optical waveguide amplifier jointly act in an erbium-doped medium to obtain amplification gain. By combining the advantages of tunable wide-range wavelength, ultra-narrow linewidth, small size and high integration level of the silicon-based external cavity laser and high gain and low noise of the on-chip erbium-doped optical waveguide amplifier, high-power and high-integration-level narrow linewidth laser output is realized; the problems that a current commercial solid-state laser, an optical fiber laser and a semiconductor space light external cavity laser are large in size and high in power consumption, and a current semiconductor laser is insufficient in output light power and limited in line width compression are solved.

This invention discloses a method for preparing erbium-doped gallium oxide thin films via fog chemical vapor deposition and its applications. The method includes: preparing a solution containing gallium oxide and erbium precursors, adding a stabilizer; forming micron-sized droplets through ultrasonic or pneumatic atomization; depositing the film at a low temperature of 200-600℃ on substrates such as sapphire or silicon using nitrogen or argon as a carrier gas; and annealing to optimize crystal quality. The resulting thin films have an erbium doping concentration of 0.1-5 at.%, a thickness of 100-500 nm, a β-phase structure, a photoluminescence peak at 1.54 μm, a quantum yield of 12.0-20.1%, and a uniformity of 95-99%, making them suitable for fiber optic communication waveguide amplifiers and deep ultraviolet photodetectors. This method is low-temperature efficient, compatible with various substrates, reduces thermal stress, and significantly improves film quality and device performance.

The invention discloses a rare earth doped waveguide amplifier based on a low-limit waveguide structure and a preparation method of the rare earth doped waveguide amplifier. The rare earth doped waveguide amplifier comprises a silicon substrate, a silicon oxide lower cladding, a rare earth doped aluminum oxide lower cladding, a low-loss material core layer and a rare earth doped aluminum oxide upper cladding which are sequentially stacked from bottom to top. Wherein the thickness of the rare earth doped aluminum oxide lower cladding layer is the same as that of the rare earth doped aluminum oxide upper cladding layer, and the refractive index of the rare earth doped aluminum oxide lower cladding layer is the same as that of the rare earth doped aluminum oxide upper cladding layer; the distribution proportion of light field energy on the rare earth doped aluminum oxide lower cladding, the low-loss material core layer and the rare earth doped aluminum oxide upper cladding is controlled by adjusting the structural parameters of the low-loss material core layer. The invention aims to solve the core technical problem that an existing rare earth doped waveguide amplifier, especially a high-constraint waveguide structure, cannot give consideration to high gain, low noise and miniaturization at the same time.

The invention discloses a photoelectric co-packaging structure and a preparation method thereof. The photoelectric co-packaging structure comprises an optical waveguide amplifier, an optical fiber connector, an LED vertical pumping array, an electronic integrated chip, a photonic integrated chip and an evanescent wave interlayer coupling structure, electric signal transmission between the chips is realized through electrical interconnection structures such as TGV and RDL; wherein the evanescent wave interlayer coupling between the optical waveguide amplifier and the photonic integrated chip adopts a gain material as a binder. According to the invention, a spin-coated gain material with matched refractive index is used as a binder for coupling between evanescent wave layers between a glass waveguide and a photonic integrated chip in photoelectric co-packaging based on a glass adapter plate, and an LED vertical pump array is introduced into a packaging structure to provide pump light, so that coupling between evanescent wave layers with a loss compensation function is realized; the gain material can be used as a binder in a scheme that any waveguide passes through evanescent wave interlayer coupling.