47results about "Amplifier modifications to extend bandwidth" patented technology

A radio frequency (RF) power amplifier based on transformer matching is provided. The RF power amplifier includes: a first-stage amplification circuit configured with an input terminal and an output terminal, wherein the output terminal of the first-stage amplification circuit is configured to be connected to one terminal of a main coil of a first transformer; the first transformer configured to include the main coil and a secondary coil, wherein one terminal of the secondary coil is grounded and the other terminal of the secondary coil is connected to a medium-low power mode input terminal of a power switch; the second-stage amplification circuit configured with an input terminal for receiving the amplified RF signal from the first-stage amplification circuit, wherein an output terminal of the second-stage amplification circuit is configured to be connected to a high power mode input terminal of the power switch.

The application discloses a kind of ultra-low voltage wideband low noise amplifiers, it is related to radio frequency signal transceiver technical field.Solve the high-frequency gain attenuation problem in the design of current low power supply voltage wideband low noise amplifier, including two-stage common-source amplifier connected in turn;The input stage amplifier is composed of input matching network, source sense asymmetric current sharing structure, cascaded matching network;The output stage amplifier is composed of MOS single-layer common-source structure, output matching network.The application improves the conventional source degeneration inductance structure, proposes a kind of source sense asymmetric current sharing structure, on the one hand, gain compensation of high frequency band is realized under the premise of not increasing power consumption, on the other hand, circuit uses peak inductance technology to realize wideband matching, gain compensation and reduce noise.In addition, the circuit uses active substrate noise reduction technology, adds high output impedance gate ground MOS tube to improve substrate resistance, reduce the noise change due to power consumption reduction.

An amplifier includes a transistor, an input circuit coupled between an amplifier input and a transistor input terminal, and an output circuit coupled between a transistor output and a transistor output terminal. The input circuit includes an input-side harmonic termination circuit having a first inductor and a first capacitor connected in series between the transistor input terminal and ground. The output circuit includes a second inductor, an output-side harmonic termination circuit, and a parallel inductor network. The second inductor is coupled between the transistor output terminal and the amplifier output. The output-side harmonic termination circuit includes a third inductor and a second capacitor connected in series between the amplifier output and ground. The parallel inductor network includes a fourth inductor and a third capacitor connected in series between the amplifier output and ground. The input-side and output-side harmonic termination circuits resonate at harmonic frequencies of the amplifier's operating fundamental frequency.

Methods, systems, and apparatus, including computer programs encoded on computer storage media, for a radio frequency (RF) receiver including a dual-mode low noise amplifier (LNA). One of the methods includes configuring the RF receiver to a wideband mode including operation over a multiple receive frequency (RX) bands including multiple frequencies, receiving, by the RF receiver, an input RF signal, scanning the multiple frequencies to detect a transmitted frequency of the input RF signal, configuring the RF receiver to narrowband mode including operation over a proper subset of the RX bands including a proper subset of the multiple frequencies, and tuning the RF receiver to the transmitted frequency.

The TX / RX switch includes a power amplifier (PA), a low noise amplifier (LNA), and an antenna connection. The PA is connected to a PA matching network with a PA network impedance and a common PA-LNA impedance connected in one or more series-parallel combinations in various embodiments in a transmit mode. The LNA is connected to an LNA matching network with an LNA network impedance and an identical common PA-LNA impedance connected in one or more series-parallel combinations in a receive mode. A mode switch may connect the common PA-LNA impedance in different configurations to enable the transmit and receive modes, respectively. In some embodiments, the mode switch may short or open the connection of the PA matching circuit or the LNA matching circuit to the antenna. In some embodiments, the mode switch may also power on or off the PA or the LNA when the switch is in a mode where the respective amplifier is not selected. Therefore, with certain design constraints on the common PA-LNA impedance, combined with different mode switch configurations of the TX / RX switch components for TX or RX mode, the TX / RX switch operates within the design bandwidth without a transmission line embedded within the TX / RX switch circuitry to achieve optimal power transfer to and from the antenna with reduced noise antenna connection.

Amplifiers with differential transformers for high peaking frequency are described herein. An example amplifier includes a differential transistor pair, an auxiliary transistor pair coupled to the differential transistor pair, a differential transformer coupled between base terminals of the auxiliary transistor pair, and a bias circuit coupled between base terminals of the auxiliary transistor pair. The differential transformer can be embodied as a coupled-line transformer. The bias circuit can include a first bias circuit coupled between a first coupled line of the differential transformer and a base terminal of a first transistor among the auxiliary transistor pair, and a second bias circuit coupled between a second coupled line of the differential transformer and a base terminal of a second transistor among the auxiliary transistor pair.

This disclosure relates to methods and apparatus for amplifying signals using an amplifier circuit system. An example apparatus includes: a transconductance circuit system (205) having an input and an output; a first capacitor (210) having terminals; an amplifier (215) having an input and an output, the input of the amplifier being coupled to the output of the transconductance circuit system and the terminals of the first capacitor; a resistor (220) having a first terminal and a second terminal; and a second capacitor (225) having a first terminal and a second terminal, the first terminal of the second capacitor being coupled to the output of the amplifier and the first terminal of the resistor, and the second terminal of the second capacitor being coupled to the input of the transconductance circuit system and the second terminal of the resistor.

The application discloses a normal distribution weight-based wideband power amplifier circuit real frequency matching method, which is applied to the communication field and aims at the frequency point performance compromise in the existing wideband matching method and the problem that the existing wideband matching method cannot adjust a cost function according to actual application requirements; the application adopts a normal distribution to give different weights to different frequency points in a bandwidth, wherein according to the properties of the normal distribution, proper mean value of the normal distribution can make the central frequency in the bandwidth have the highest weight, and further proper standard deviation can obtain the weights of other frequencies and the ratio of the weight of the central frequency, the method can design a better matching network by using the characteristics that most actual systems conform to the normal distribution, so as to improve the matching network performance of the power amplifier, and further design a radio frequency power amplifier with the characteristics of high bandwidth and high conversion efficiency.

The utility model relates to amplifier technical field, concretely is a kind of wideband power amplifier, including amplifier, upper cover and support frame, the upper cover is connected in amplifier upper end, support frame is connected in the place of amplifier lower end near front and back, the panel is equipped in the front of amplifier, the protective frame is equipped in the upper portion and lower portion of panel, display screen and multiple control buttons are equipped in the middle of panel front, wire clamp is connected in the middle of back near the inside of amplifier, multiple wire grooves are equipped in the upper end and front of wire clamp, isolation plate is equipped in the two sides of back near the outside of amplifier, heat dissipation fin is equipped in the two sides of back and front of the outside of amplifier, heat dissipation fan is connected in the two sides of back and front near the inside of amplifier, first heat dissipation grid is equipped in the two sides of back and panel front of the amplifier, the amplifier back is equipped with multiple plug-in interfaces.

This application provides an analog front-end chip, an analog front-end circuit, and a signal processing device, including: a first operational amplifier module for amplitude adjustment of an electrical signal connected to a first input impedance network; and a second operational amplifier module for amplitude adjustment of an electrical signal connected to a second input impedance network. The second input impedance network has a different impedance than the first input impedance network. The first and second operational amplifier modules are integrated within the same chip. This solves the problem of parasitic capacitance and resistance sensitivity caused by external chip interconnections; avoids the influence of process deviations on the bandwidth of the signal transmission path; and easily achieves high bandwidth performance for the analog front-end circuit. Simultaneously, since all critical signal paths are within a single chip, the temperature characteristics are consistent, resulting in minimal system temperature drift.

The application discloses a kind of high-load wide frequency band large current power amplifier and method for travelling wave distance measuring device test, belong to electric power system test field.The amplifier includes signal conditioning, error amplification, drive, power amplification, current feedback, power supply and output module;Signal conditioning module pre-processes input signal, error amplification module generates error drive signal in conjunction with double feedback, drive module bridge type amplifies signal, power amplification module realizes large current output with multiple MOS parallel connection, current feedback module acquires and processes load current, power supply module is multistage isolation architecture, and output module integrates safety protection.The method is by signal conditioning, error amplification, signal drive, power amplification, current feedback, power supply and safety output steps, and injects 100A peak value, DC to 500kHz wide frequency band fault current travelling wave signal to travelling wave distance measuring complete device.The application realizes high load, wide frequency band, large current and high fidelity output, improves travelling wave distance measuring device test accuracy and reliability.

This invention discloses an operational amplifier based on a cyclic folded cascode architecture, relating to the field of analog circuit technology, to address the problems of low energy efficiency in existing folded cascode amplifiers and limited energy efficiency improvement in cyclic folded cascode structures. It includes a differential input transistor, a current mirror, an adaptive bias circuit, and an output stage. The adaptive bias circuit is connected to the differential input transistor, and the current mirror is connected to both the differential input transistor and the output stage. The adaptive bias circuit includes a flip-flop voltage follower. The current mirror is used for current recycling and zero-point compensation, and the output stage is used to output amplified signals. The adaptive bias circuit includes a flip-flop voltage follower to improve the dynamic performance of the amplifier. Zero-point compensation can improve the phase margin of the circuit, further improving the gain-bandwidth product. Compared to traditional operational amplifiers, the operational amplifier of this invention can achieve higher bandwidth and higher energy efficiency with lower power consumption.

A Josephson parametric device is presented that includes an input port, an output port, and a signal path between the input port and the output port. The signal path includes a first section coupled to the input port and having a first passband, a second section coupled to the output port and having a second passband, and a Josephson junction coupling element for parametric coupling between the first and second sections. The Josephson junction coupling element is coupled to and interposed between the first section and the second section. The Josephson junction coupling element is configured such that, in response to the input port receiving a first signal at a first frequency within the first passband and the Josephson junction coupling element receiving a pump tone, the Josephson junction coupling element converts the first signal to a second signal having a second frequency within the second passband.

The application belongs to the technical field of wireless communication and electronic engineering, and particularly relates to a wideband low-noise amplifier with a frequency domain selection function, which comprises an input direct-current isolation matching network, a first-stage amplification part, an inter-stage high-pass matching network, a second-stage amplification part and an output low-pass matching network which are sequentially connected in series. Through a multi-pole-zero topology design, the wideband rejection, high port isolation, high integration and high selectivity are synergistically optimized. Within the target passband of 8-12 GHz, three transmission poles in the passband ensure excellent gain flatness, and the noise coefficient is stabilized at 0.994-1.101 dB; one transmission zero point is arranged in the lower stopband (<8 GHz) and the upper stopband (>12 GHz) respectively, the low-frequency suppression depth is greater than or equal to 50 dB, and the high-frequency suppression depth is greater than or equal to 30 dB; at the same time, the input return loss is greater than or equal to 11 dB, the output return loss is greater than or equal to 18 dB, and the port matching and isolation performance are excellent. The application is based on a GaAs 0.15 mu m MMIC planar integration process, and compared with a discrete cascade scheme, the volume is reduced by 60%, which is suitable for the development trend of high integration and miniaturization of a radio frequency front end, and can be widely applied to 5G millimeter wave communication, satellite navigation, radio frequency radar and other radio frequency front end systems with extremely high requirements for receiving sensitivity and anti-interference ability.

This ring amplifier lowers output impedance, increases bandwidth, and improves slew rate. [Solution] A ring amplifier 10A in which multiple inverters are connected in series includes a first MOS transistor MP1 that constitutes the output stage inverter INV3d, a second MOS transistor MP2 connected in parallel to the first MOS transistor MP1, a capacitor C3 that feeds back the output signal OUT of the output stage inverter INV3d to the input side of the ring amplifier, and a differential amplifier B1p that attenuates the signal input to the first MOS transistor MP1 and inputs it to the gate of the second MOS transistor MP2.

To present a Josephson parametric device that includes an input port, an output port, and a signal path between the input port and the output port.SOLUTION: A signal path includes a first section coupled to an input port and having a first passband, a second section coupled to an output port and having a second passband, and a Josephson junction coupling element for parametric coupling between the first and second sections. The Josephson junction coupling element is coupled to and interposed between the first and second sections. The Josephson junction coupling element is configured such that the input port receives a first signal at a first frequency within the first passband, and in response to the Josephson junction coupling element receiving a pump tone, the Josephson junction coupling element converts the first signal to a second signal at a second frequency within the second passband.SELECTED DRAWING: Figure 1

The disclosure provides a working state adjustment method and apparatus, a terminal and a storage medium. The method is applied to the terminal. A power amplifier (PA) is arranged on the terminal. The method includes: determining (101) a target channel bandwidth in which the terminal works; determining (102) a target working state in which the PA works among optional working states according to the target channel bandwidth, in which the optional working states correspond to at least two types of working modes respectively; and adjusting (103) the PA to work in the target working state.

This utility model relates to the field of radio frequency communication technology and discloses a multi-band broadband power amplifier module, including a single-chip module, a thermal management module, and a power management module. The single-chip module integrates a dynamic broadband matching module, a multi-stage push-pull amplification module, and a digital predistortion correction module. The output terminal of the dynamic broadband matching module is electrically connected to the input terminal of the multi-stage push-pull amplification module, and the output terminal of the multi-stage push-pull amplification module is electrically connected to the input terminal of the digital predistortion correction module. The output terminal of the digital predistortion correction module is electrically connected to the input terminal of the dynamic broadband matching module. The single-chip module is bidirectionally electrically connected to the thermal management module. In this utility model, by adopting an integrated design, the dynamic broadband matching module, the multi-stage push-pull amplification module, and the digital predistortion correction module are integrated onto a single chip, significantly reducing the overall size, lowering production costs, and improving power amplification efficiency.

To provide an equalizer circuit capable of shaping a multi-value PAM signal.SOLUTION: An equalizer circuit 600 comprises a variable gain equalizer circuit 610. A third transistor MN53 for gain adjustment is inserted between the source of a first transistor MN51 that configures an input differential pair of the variable gain equalizer circuit 610, and a first current source IB51. A fourth transistor MN54 for gain adjustment is inserted between the source of a second transistor MN52 that configures the input differential pair, and a second current source IB52. The gates of the third transistor MN53 and the fourth transistor MN54 are supplied with a first bias voltage Vb1 to be able to control the DC gain of the variable gain equalizer circuit 610.SELECTED DRAWING: Figure 2

To solve a problem that a high-voltage mosFET has a large gate input capacitance, and therefore, there is a limit to high-speed and wideband operation of a high-voltage amplifier using the high-voltage mosFET.SOLUTION: A high-voltage composite mosFET having a gate of a low input capacitance and a source of a low input impedance is devised and applied to a high-voltage amplifier using the high-voltage mosFET. In addition, a circuit for driving a high impedance gate of the composite-type mosFET by the low impedance source of the composite-type mosFET paired with a positive-side output stage and a negative-side output stage of a high-voltage amplification part with respect to an output via a capacitor is added to a high-voltage amplification circuit. Further, the high-voltage composite mosFET having a high performance by adding a capacitor for preventing a transmission has achieved a high-speed and a wideband operation of a stable high-voltage amplifier without increasing a power loss.SELECTED DRAWING: Figure 2-1

Example embodiments relate to wideband class-E amplifiers. One example embodiment includes a class-E radiofrequency, RF, amplifier. The class-E RF amplifier includes a power transistor configured to receive an input signal having a predetermined duty cycle. The power transistor includes an output and an output capacitance Cout. The class-E RF amplifier also includes a class-E network connected to the output of the power transistor. The class-E network is configured to present a frequency-dependent impedance over a given operational frequency band at the output of the power transistor, wherein (i) the combination of the impedance of the class-E network seen at the output of the power transistor and the output capacitance Cout matches, over the operational frequency band, (ii) an impedance profile that has been constructed using a model for a generalized class-E amplifier. The model includes a switching element and a generalized class-E network including a shunt capacitive network connected to an output of the switching element.

The utility model discloses a 0.38GHz-18GHz broadband low harmonic amplifier relates to the amplifier field, the amplifier includes signal input, signal input connects the pre band -stop filter circuit, primary amplification circuit, interstage broadband matching network, final stage amplification circuit and frequency division section harmonic suppression module in proper order, the output of frequency division section harmonic suppression module is connected signal output of the amplifier, the amplifier still includes dynamic bias control circuit, dynamic bias control circuit is connected with the bias node of primary amplification circuit and the bias node of final stage amplification circuit respectively. The utility model discloses through dynamic bias control circuit real -time regulation primary and final stage amplification circuit's bias voltage, combines frequency division section harmonic suppression module adaptive switching filter subunit, accurate suppression full -band harmonic, solved the problem that traditional broadband amplifier harmonic suppression bandwidth is insufficient, the big problem of insertion loss.

This utility model discloses a low-frequency ultra-wideband low-noise amplifier, including a power supply circuit, a feedback circuit, and an input matching circuit, a first-stage amplifier circuit, a second-stage amplifier circuit, and an output matching circuit connected in series. The power supply circuit is connected to the output matching circuit, providing power to the first-stage amplifier circuit, the second-stage amplifier circuit, and the feedback circuit, respectively. The feedback circuit is connected in parallel with the first-stage amplifier circuit, the second-stage amplifier circuit, and the output matching circuit. By connecting the outer loop of the choke inductor and a nearby inner loop in the power supply circuit, the resonant frequency is moved away. In addition, the power supply circuit not only supplies power to the gate of the first RF amplifier transistor but also to the gate and drain of the second RF amplifier transistor.

Disclosed is a bandwidth adjustment circuit and a bandwidth adjustment method of an operational amplifier. The circuit comprises: a bias current generation unit connected with a bias current input terminal of the operational amplifier and used for providing a bias current to the operational amplifier; a current adjustment unit, connected with the bias current generation unit and an output terminal of the operational amplifier, respectively, and used for adjusting the bias current according to an output voltage of the operational amplifier to realize bandwidth adjustment on the operational amplifier. The bandwidth adjustment circuit and the bandwidth adjustment method can dynamically adjust the bandwidth of the operational amplifier according to the output voltage, not only improving stability when the output voltage of the operational amplifier is low, but also ensuring excellent performance of the operational amplifier when the output voltage is high.

The present disclosure relates to an anti-aging bandwidth extension device. A circuit for inductive peaking can include a driver, an inverter, a resistor between an output node of the driver and an input node of the inverter, and a switch. For example, a first node of the resistor can be connected to the output node of the driver, and a second node of the resistor can be connected to the input node of the inverter. The switch can be connected between an output node of the inverter and the first node of the resistor. An input node of the driver can correspond to an input node of the circuit, and the output node of the driver can correspond to an output node of the circuit.

An amplifier system may include at least one alternating current (AC) input source, a first DC-DC converter configured to convert the AC voltage to a first rail voltage, a second DC-DC converter configured convert the AC voltage to a second rail voltage, and a Class D amplifier configured to receive the first rail voltage on a first positive rail from the first DC-DC converter and the second rail voltage on a second negative rail from the second DC-DC converter to reduce rail pumping of the first and second voltage rails.

The application belongs to the field of communication devices, and particularly relates to a wideband power amplifier device for unmanned aerial vehicle communication, which comprises a main body, a fixed bin, a heat conduction plate, at least two grooves, an air pressure bin, a movable shaft, a plurality of tooth grooves, a conduction mechanism and an adjusting probe.

A multimode power amplifier module, a chip and a communication terminal. In the multimode power amplifier module, a control circuit (104) sends a bias signal to a low-frequency power amplifier (102) or a high-frequency power amplifier (106) according to a baseband signal, so as to control the amplification of an accessed low-frequency radio frequency signal or a high-frequency radio frequency signal by the low-frequency power amplifier (102) or the high-frequency power amplifier (106); and a transceiving switch (108) selects a corresponding operation mode to conduct transmission or receiving according to an operation mode selection signal. A power amplification path is reused according to different modes, so that the power amplification path can be shared by different operation modes of a high and low frequency band with the adjustment of the control circuit (104), thus simplifying the complexity in designing the power amplifier module, and reducing the cost of relevant design implementation.

Technologies are disclosed that implement impedance inversion using a combination of transmission lines and lump elements to provide a targeted transformation or inversion. These impedance inverters or transformers use a hybrid approach, combining transmission lines with lump elements, where the transmission lines provide a first fraction of a targeted overall phase shift and the lump elements provide a second fraction of the targeted overall phase shift so that the combination of the elements provides the targeted overall phase shift. The first fraction can be less than 50% and the second fraction can be greater than 50% so that the phase shift is not evenly divided between the components of the hybrid impedance inverters.

The present disclosure provides an instrument amplifier with active protection drive, which introduces an active protection drive circuit outside the instrument amplification core circuit, so that the signal transmission line shielding layer potential follows the output potential of the input buffer circuit, thereby reducing the equivalent potential difference between the signal line core and the shielding layer, reducing the shunt effect caused by the parasitic capacitance, and further improving the effective bandwidth of the high impedance sensor measurement system; At the same time, the phase compensation network is arranged in the feedback loop of the protection drive amplifier, and the loop phase when driving the capacitive load is compensated, which can suppress ringing and oscillation, improve system stability and signal-to-noise ratio, and enhance the applicability and adjustability of the circuit under different cable lengths and parasitic capacitance conditions.