733results about "Amplifier modifications to extend bandwidth" patented technology

The invention provides a broadband low-noise amplifier based on a three-coil coupling transformer. The broadband low-noise amplifier comprises an input matching network, a common-source differential output driving stage amplifier, an inter-stage matching network, a common-source differential output power stage amplifier and an output matching network which are connected in sequence, broadband matching is realized by using the input matching network and the inter-stage matching network, and the effective transconductance of the transistor is improved; through the cross-coupled capacitors, the LNA gain and stability on a broadband are improved, better isolation is realized, and input and output are decoupled; due to the design of the grounding capacitor, the linearity of the LNA is improved; through the combination of the three-coil coupling transformer and the differential topology, output signals are superposed in the same direction at the output end, and noise is cancelled in the reverse direction at the output end, so that the thermal noise is greatly inhibited, the isolation is improved through the output matching network, the insertion loss is reduced, and the output matching performance is optimized.

The utility model relates to a radio frequency power amplification circuit with a harmonic suppression function and a radio frequency chip. The radio frequency power amplification circuit comprises an input matching unit, a first-stage power amplification unit, a first-stage bias unit, a first-stage power supply unit, an inter-stage matching unit, a second-stage power amplification unit, a second-stage bias unit, a second-stage power supply unit and an output matching unit. According to the utility model, the LC type trap circuits are designed and used in the power supply unit and the inter-stage matching unit, so that secondary, tertiary and high-order harmonic suppression is realized in the radio frequency power amplification circuit; meanwhile, based on LC circuit structures in the power supply unit and the inter-stage matching unit, the inter-stage matching bandwidth is widened, and the linearity of the multi-stage power amplification unit is improved.

The invention relates to the technical field of radio-frequency signal processing, and discloses a 5G radio-frequency signal amplification method and system, and the method comprises the steps: decomposing an obtained radio-frequency signal into a high-frequency sub-band and a low-frequency sub-band through a multilayer wavelet packet, judging whether the radio-frequency signal is sparse in a wavelet packet domain, and carrying out the sparse reconstruction of an LI norm minimization problem if the radio-frequency signal is sparse; obtaining feature data of each sub-band, extracting a nonlinear transfer function of each sub-band through a CNN-GRU network, and carrying out transfer learning pre-training and dynamic adaptation updating; on the basis of dynamic adaptation update ending, layered memory polynomial calculation and layered model joint output construction, layered model parameter optimization is converted into a least square problem to obtain an error compensation function, and resource allocation is dynamically adjusted according to the peak-to-average power ratio of an input signal; and based on power amplifier state data, holographic sensing is performed on nonlinear parameters of the device through a fusion model, and dynamic changes of the device are compensated through multi-stage calibration and calibration delay is controlled.

The invention discloses a power synthesis amplifier which comprises two power amplification structures, and each power amplification structure is composed of an input matching circuit, a driving stage amplifier DA, an inter-stage matching circuit, a power stage amplifier PA and an output matching circuit. The input end of the power synthesis amplifier is connected by a T-junction power distribution network; the output end of the power synthesis amplifier is connected with the T-junction power synthesis network. The output power of the power amplifier is improved by adopting a two-path synthesis technology, specifically, the power amplifier can be expanded to multiple paths according to needs, and an output power synthesis network adopts a current type synthesis network, so that the amplitude-phase balance of two paths of output signals and the current processing capability of a circuit are ensured, and the output efficiency is improved; the output-stage matching circuit adopts a transformer with a high coupling coefficient to reduce signal loss, the input and inter-stage matching networks adopt a transformer with a low coupling coefficient to play a role in expanding bandwidth, and the multi-stage matching circuit can be widely applied to the technical field of mobile communication and radar detection.

The invention discloses an ultra-wideband low-noise amplifier based on a double-coupling structure, relates to the field of electronic devices, and is used for solving the problems of large occupied area and large noise coefficient of a distributed amplifier in the prior art. Comprising a broadband input matching network acting on a first-stage circuit, a transconductance enhancement coupling structure and an active bias structure; the parallel RC negative feedback structure and the series-parallel coupling inductance peaking structure act on the second-stage circuit; the transconductance enhancement coupling structure at least comprises a first transistor, a first microstrip line connected with a source electrode of the first transistor and a second microstrip line connected with a drain electrode of the first transistor, and the first microstrip line and the second microstrip line are mutually coupled. Part of drain electrode current signals are coupled to the source electrode to be secondarily amplified, the high-frequency gain of the first-stage circuit is effectively improved, post-stage noise can be restrained, meanwhile, minimum noise matching under high frequency is carried out through the source electrode degeneration inductor and the broadband input matching network, and the noise performance is excellent; and the area can be saved.

The invention provides a four-frequency-band reconfigurable load modulation balanced amplifier structure and a regulation and control method thereof, and aims to solve the problems that in the existing power amplifier technology, the efficiency is low during power back-off, and multi-scene requirements cannot be met. The four-frequency-band reconfigurable load modulation balanced amplifier comprises a 90-degree Lange coupler of an input port and a 90-degree Lange coupler of an output port; a two-stage reconfigurable balanced power amplifier composed of an input matching network, a reconfigurable inter-stage matching network and an output-stage pre-matching network and a two-stage control signal power amplifier are combined through an active load modulation technology and a reconfigurable technology, a compact matching network is utilized, and a reconfigurable power amplifier is formed. The efficiency of output power rollback is greatly improved, and the system requirements in different frequency band application scenes can be met.

The invention discloses a broadband high-isolation on-chip small-size power divider applied to 5G, and the power divider comprises two branches, and the first branch and the second branch are respectively provided with a series capacitor, an on-chip grounding spiral inductor, a transmission line, an isolation capacitor, an isolation inductor and an isolation resistor. The isolation capacitor, the isolation inductor and the isolation resistor are electrically connected between the first branch circuit and the second branch circuit, and the transmission line is less than a quarter wavelength. The spiral inductors on the ground lugs connected in parallel are used for improving even mode matching of the power divider, and the isolation capacitors and the isolation resistors are used for improving odd mode matching of the power divider. By adopting the transmission line with the wavelength smaller than 1 / 4, the power divider provided by the invention effectively reduces the circuit size and can realize two-path power synthesis. The technical problem that a power divider in the prior art is difficult to adapt to the high integration level of a 5G radio frequency system can be solved, and the provided power divider also has the characteristics of wide band and high isolation.

The invention discloses an ultra-wideband high-linearity power amplifier with a negative feedback structure. The ultra-wideband high-linearity power amplifier comprises an input matching network, a driving-stage amplifying circuit, an inter-stage matching network, a power-stage amplifying circuit, an output matching network, a negative feedback RLC (Radio Link Control) network and a self-adaptive biasing circuit, an input radio-frequency signal is transmitted to the driving-stage amplification circuit through the input matching network for primary amplification, transmitted to the power-stage amplification circuit through the inter-stage matching network for secondary amplification and output through the output matching network, and the driving-stage amplification circuit comprises a first transistor and a second transistor. The power level amplification circuit comprises a third transistor and a fourth transistor; the self-adaptive bias circuit is used for providing self-adaptive bias voltage for the first transistor and the third transistor; the negative feedback RLC network is used for controlling the gain and bandwidth of the amplifier and comprises a driving-stage negative feedback network and a power-stage negative feedback network. The working bandwidth of the power amplifier can be widened, and the gain, the output power and the linearity of the amplifier can be improved.

The present invention provides a broadband harmonic suppression power amplifier containing a resistive filter, and relates to the technical field of power amplifiers. The present invention effectively solves the power supply compatibility problem between BJT power units and GaN power units through innovative single-power intelligent reconstruction technology. Ensure that the negative gate voltage required by the GaN power unit is established first and intelligently triggers the drain power supply, reducing the risk of device damage caused by bias disorder. The built-in resistive filter network and cascade control design can adaptively suppress high-frequency harmonic interference, improve signal purity and system electromagnetic compatibility. Through modular circuit integration, while retaining the original power supply interface and heat dissipation structure, the seamless upgrade from BJT to GaN architecture is achieved, reducing the cost and cycle of hardware transformation. Supporting seamless switching of dual-mode power units, the operating frequency range of old equipment is expanded and the output power is enhanced without the need for overall reconstruction, while reducing overall energy consumption.

The invention discloses a self-stabilization zero operational amplifier circuit free from input imbalance and common mode influence, relates to the technical field of integrated circuits, and is applied to a high-precision operational amplifier. The operational amplifier is a three-stage operational amplifier and mainly comprises a single auxiliary input end zeroing amplifier, a main amplifier and an output stage. After a zero setting auxiliary input end of a traditional zero setting amplifier is changed into single-end input from differential input and a zero setting input stage is subjected to multi-stage design, an offset voltage of 3.8 microvolts, a low-frequency gain of 189dB and a gain bandwidth product of 8.6 MHz are realized under power consumption of 400 microamperes, the phase margin of the operational amplifier is 78 degrees under unit gain, and the stability requirement is met. Compared with a traditional structure, the low-residual-offset operational amplifier has the advantages that lower residual offset and larger operational amplifier bandwidth are achieved, and the application range is wider.

The embodiment of the invention provides a power amplification circuit, radio frequency generation equipment and a communication system, which are applied to the technical field of wireless communication. The power amplification circuit comprises a first main amplification circuit, a second main amplification circuit, a first slave amplification circuit, a second slave amplification circuit, a first coupler, a second coupler, a first combiner and a second combiner. Wherein the pilot frequency power division characteristic is realized after a signal passes through the first coupler and the second coupler. The bandwidths of the first main amplification circuit and the second main amplification circuit are smaller than the bandwidths of the first slave amplification circuit and the second slave amplification circuit. And by narrowing the main amplification circuit, the design difficulty is reduced. Through the design of the combiner, the impedance of the two main amplification circuits is constant, so that the main amplification circuits are designed to be relatively independent, and the main amplification circuits can be easily replaced with other efficient frameworks to realize larger rollback amount. According to the embodiment of the invention, large-bandwidth, large-backoff-amount and high-efficiency power amplifier design can be carried out more easily.

A balanced radio frequency power amplifier, a front-end module, and a corresponding electronic device. The balanced radio frequency power amplifier comprises a driving-stage power unit (101, 201), an inter-stage power divider (102, 202), a main path power amplifier (103, 203), an auxiliary path power amplifier (104, 204), a first output matching network (A105, A205), a second output matching network (B106, B206), and an output power combiner (107, 207). A symmetrical balance design is used for the main path power amplifier (103, 203) and the auxiliary path power amplifier (104, 204), so that the impact of the change in the antenna voltage standing wave ratio (VSWR) on the transmission power and the transmitting efficiency is overcome to the greatest extent. Moreover, a 3 dB distributed orthogonal coupler is used for the inter-stage power divider (102, 202) and the output power combiner (107, 207).

The invention discloses a broadband power amplifier with an output reconfigurable network, and relates to the technical field of microelectronics, the broadband power amplifier with the output reconfigurable network adopts a three-stage amplification circuit with a gate width ratio of 1: 2: 8, and signal pre-amplification and gain improvement are realized through the first two stages of amplifiers; the last-stage eight-tracheid parallel structure outputs saturated power under high-voltage power supply and realizes power additional efficiency; the output reconfigurable network is controlled by a first switch and a second switch, the first switch is turned off and the second switch is turned on in a high-power mode, so that a compensation microstrip line is grounded to form a fundamental wave matching branch knot, the loss of a harmonic suppression network is avoided, and high-efficiency output is guaranteed; in a low-power mode, the first switch is switched on, the second switch is switched off, the first LC resonance unit and the second LC resonance unit jointly form a band-stop filtering network, secondary and third harmonic impedance is adjusted to be in a near-short-circuit state, so that generation of higher harmonics is restrained, phase distortion is offset through the compensation microstrip line, and the integrity of fundamental wave signals is maintained.

The invention discloses a broadband reflection amplification circuit design method based on a real frequency matching method, which comprises the following steps: firstly designing a reflection amplification circuit, designing a real frequency matching network based on the real frequency matching method, and finally inserting the real frequency matching network into the input end of the reflection amplification circuit to construct the broadband reflection amplification circuit based on the real frequency matching method. According to the method, the input impedance of the reverse amplification circuit is tested through the load traction technology, then the parameter characteristics of the matching network are calculated through the optimization algorithm, and finally the structure and parameter values of the matching network are obtained through the circuit synthesis method, so that the method is not limited by a specific matching network architecture, the performance of the matching network can be greatly improved, and the reliability of the matching network is improved. The problem of broadband matching between the transmitting-receiving antenna and the reflection amplification circuit is solved, so that the reflection amplification circuit can realize high gain under different input powers and input frequencies, the working bandwidth of the reflection amplification circuit is expanded, and the purpose of expanding the application scene of the reflection amplification circuit is achieved.

The invention discloses an ultra-wideband cross-octave high-efficiency power amplifier and a working mode design method thereof, and the method comprises the steps: analyzing the problems of the working mode of an existing power amplifier, and determining the influence of introducing second harmonics in the working mode design process according to an analysis result; designing an input voltage calculation expression at the tube core gate end based on the fundamental wave and the second harmonic at the tube core gate end in the input power amplifier, and calculating the input voltage at the tube core gate end according to the input voltage calculation expression; designing an output current calculation expression at the drain end of the tube core according to the input voltage calculation expression, and calculating the output current at the drain end of the tube core according to the output current calculation expression; and designing an efficiency calculation expression at the drain end of the tube core according to the output current calculation expression so as to calculate the efficiency at the drain end of the tube core according to the efficiency calculation expression of the power amplifier. The working mode designed by the invention is of great significance to the development of an ultra-wideband, cross-octave and high-efficiency radio frequency transceiver system.

The invention discloses a multi-mode ultra-wideband continuously adjustable microwave power amplifier circuit, and belongs to the technical field of microwave integrated circuits. Switching between the ultra wide band and multiple communication frequency bands can be realized by adjusting the control voltage and the drain electrode power supply circuit of the pre-stage circuit, and the center frequency of the communication frequency bands can be independently designed. And the center frequency of the communication frequency band can be changed by changing the values of the capacitor and the inductor in the continuous adjustable branch knot and the inductor in the drain power supply circuit of the pre-stage circuit. Through on-chip voltage and external voltage switching control, mode switching of the ultra wide band and multiple communication frequency bands can be realized, and the problems that the ultra wide band and the communication frequency bands of the high-performance power amplifier can be switched and the communication frequency is continuously adjustable are solved.

The invention relates to a low-noise dynamic ring amplifier based on variable dead-zone voltage. The amplifier comprises a ring amplifier unit and a noise reduction unit, the input end of the noise reduction unit is connected with a two-phase non-overlapping clock signal, and the noise reduction unit is used for responding to the two-phase non-overlapping clock signal and generating a plurality of bias voltages; wherein when the two-phase non-overlapping clock signal meets a first preset condition, a first bias voltage and a second bias voltage are correspondingly generated; when the two-phase non-overlapping clock signal meets a second preset condition, attenuating the first bias voltage to a first threshold value to generate a third bias voltage, and pulling up the second bias voltage to a second threshold value to generate a fourth bias voltage; and the ring amplifier unit dynamically adjusts the dead-zone voltage in the ring amplifier unit by using a plurality of bias voltages, so that the noise bandwidth of the ring amplifier unit is adjusted in real time. The device can meet the requirements of high bandwidth and low noise without increasing power consumption.

Systems and methods are related to a distributed amplification. An amplification device can include cells including a first cell and a second cell and transmission lines including a first line and a second line. The first cell is coupled to the first line, and the second cell is coupled to the second line. The first line is configured to provide a first delay related to a delay between the first cell and the second cell. The device also includes a summer including a first input coupled to the first line and second input coupled to the second line. The summer is configured to provide an output signal.

The embodiment of the invention provides a radio frequency power amplifier and a radio frequency front-end module. The radio frequency power amplifier comprises a first radio frequency amplification circuit, a second radio frequency amplification circuit, a first transformer, a second transformer and a coupler, the first radio frequency amplification circuit is used for outputting a first radio frequency signal, and the second radio frequency amplification circuit is used for outputting a second radio frequency signal; the first transformer comprises a first coil and a second coil, and the second transformer comprises a third coil and a fourth coil; the first coil is connected with the first radio frequency amplification circuit, and the second coil is coupled with the first coil to output a first coupling signal corresponding to the first radio frequency signal; the third coil is connected with the second radio frequency amplification circuit, and the fourth coil is coupled with the third coil to output a second coupling signal corresponding to the second radio frequency signal; the coupler is used for performing power synthesis on the first coupling signal and the second coupling signal to output a synthesized signal. The radio frequency power amplifier and the radio frequency front-end module have better bandwidth performance.

Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

The invention discloses a high-linearity medium-power amplifier based on cascode RC negative feedback and a composite matching network. The high-linearity medium-power amplifier comprises a common-source transistor M1, a common-gate transistor M2, a single power supply VDD with an active bias circuit, an input matching network, an output matching network and a negative feedback loop, the input matching network comprises an inductor Lb and an inductor Lg, the output skin matching network comprises an inductor Ld1 and an inductor Ld2, and the negative feedback loop comprises a resistor Rf and a capacitor Cf; the source electrode of the common source transistor M1 is connected with the drain electrode of the common gate transistor M2, one side of the active bias circuit is connected to the grid electrode of the common source transistor M1 through the inductor Lb and the inductor Lg in sequence, the common end of the inductor Lb and the inductor Lg is connected with the input end, and the resistor Rf and the capacitor Cf are connected in series and connected between the grid electrode of the common source transistor M1 and the output end. One side of the inductor Ld2 is connected with the source electrode of the common-gate transistor M2, the other side of the inductor Ld2 is connected with one side of the inductor Ld1, the other side of the inductor Ld1 is connected with the single power supply VDD, and the common end of the inductor Ld1 and the inductor Ld2 is connected with the capacitor Cf and the output end; the method is suitable for radar and communication systems in industrial application, and has important significance for developing high-performance, low-cost and high-integration-level multifunctional chips.

The invention belongs to the technical field of integrated circuits, and particularly relates to a radio frequency amplifier bandwidth expansion circuit based on resistor-capacitor series feedback. The bandwidth expansion circuit comprises a first-stage common-gate amplifier, a second-stage common-source amplifier, a transformer-based inter-stage matching network between the two stages of amplifiers, and two resistor-capacitor series feedback paths, and a resistor-capacitor series feedback path is bridged at two sides of the interstage matching network, and feedback is introduced from the output end of the common source amplifier to the output end of the common gate amplifier, so that the quality factors of two resonant cavities of the interstage matching transformer are adjusted, and the targets of adjusting the gain of the amplifier and expanding the bandwidth of the radio frequency amplifier are further realized.

The invention discloses a broadband high-linearity power amplifier which comprises an input matching network, an intermediate-stage linearity improving network and an output matching network. The intermediate-stage linearity improving network comprises two matching branches with the same structure, and the two matching branches are connected in parallel to the output end of the input matching network; and the outputs of the two matching branches are respectively connected with the output-stage matching network. The integral matching circuit mainly adopts a capacitor, a microstrip line, an inductor and a resistor to isolate alternating current and improve stability.

The invention discloses a high-frequency digital phase-locked amplifier based on a parallel digital algorithm and a control method. The amplifier comprises an analog-to-digital converter module, a serial-to-parallel module, an N parallel frequency measurement module, an N parallel phase-locked loop module and an N parallel input coherent demodulation module. The method comprises the following steps: acquiring an analog input signal and a reference signal, and sampling; performing serial-parallel conversion processing on the sampled digital input signal and the digital reference signal; performing frequency measurement on the N parallel digital reference signals to obtain reference signal frequency measurement information; performing phase locking adjustment on the N parallel digital reference signals to obtain frequency information and phase information; and performing demodulation processing on the N parallel digital input signals to obtain amplitude information, phase information and XY component information of the digital input signals. The embodiment of the invention can reduce the rate of the data flow and improve the throughput of the data information, thereby improving the bandwidth of the phase-locked amplification system. The invention can be widely applied to the technical field of phase-locked amplification.

A variable-gain multistage broadband low-noise amplifier comprises N (N > = 2) stages of amplifying circuits, the first stage of amplifying circuit and the second stage of amplifying circuit are connected through a first inter-stage matching circuit, a main circuit switch and an inter-stage matching circuit are sequentially connected between the subsequent stages of amplifying circuits in series, the input end is connected with an input matching circuit in series to be connected to the first stage of amplifying circuit, and the second stage of amplifying circuit is connected with a second stage of amplifying circuit. The Nth-stage amplification circuit is connected in series with a main switch and an output matching circuit in sequence to a signal output end; from the second stage, each stage of amplifying circuit and the main switch are integrally connected with a bypass switch in parallel; a source degeneration inductance scheme is adopted for input matching, and the noise performance is optimized; the overall gain flatness is improved through inter-stage matching; a multi-stage LC structure is adopted for output matching, and broadband matching in different gain modes is achieved; according to the invention, control of each switch is realized through logic level signals, switching of multiple gain modes is realized, the designed bandwidth reaches more than 10GHz, and the overall gain flatness and the noise coefficient in different gain modes are kept consistent.

Apparatuses and systems implementing an amplifier module are described. The amplifier module can include a substrate. A driver amplifier die, a splitter network, an output amplifier die, a bias controller, and a combiner network can be coupled to the substrate. The driver amplifier die can be configured to receive an input radio frequency (RF) signal. The splitter network can be configured to split an intermediate RF signal outputted from the driver amplifier die into first and second RF signals. The output amplifier die can be configured to receive the first and second RF signals. The bias controller can be configured to bias the driver amplifier die and the output amplifier die. The combiner network can be configured to combine first and second outputs of the output amplifier die to generate an output RF signal and terminate at least one harmonic of the output amplifier die's output impedance.

A hybrid coupler has a first port, a second port, a third port, and a fourth port to which a load is connected. An input signal distributor distributes a first input signal that is a radio frequency signal into a second input signal and a third input signal. The second input signal is inputted to a balanced amplifier. The balanced amplifier outputs two amplified radio frequency signals with a phase difference of 90° from each other from two output ends, one of which is coupled to the first port and another one of which is coupled to the second port. The control amplifier amplifies the third input signal and outputs the amplified third input signal from an output end. The output end of the control amplifier is coupled to the third port without any circuit component affecting impedance matching disposed in between.

The invention discloses a broadband low-noise amplifier, and belongs to the technical field of monolithic microwave integrated circuits. Comprising a current multiplexing structure low-noise amplifier and a balanced low-noise amplifier which are cascaded, the current multiplexing low-noise amplifier comprises a first-stage amplification circuit and a second-stage amplification circuit which are cascaded in sequence, the balanced low noise amplifier comprises two folding Lange couplers and two amplification branches, the two amplification branches are of the same two-stage amplification circuit structure and comprise a third-stage amplification circuit and a fourth-stage amplification circuit which are cascaded and have the same structure; pHEMT (Pseudomorphic High Electron Mobility Transistor) tubes are adopted as amplifying devices in each amplifying circuit, and the broadband low-noise amplifier is integrated on a monolithic gallium arsenide. By combining the current multiplexing technology, the Lange coupler folding technology, the negative feedback technology and the balanced structure, the noise coefficient is effectively reduced, the power consumption is reduced, the layout area is reduced, and the performance of a traditional balanced low-noise amplifier is improved.

A radio frequency (RF) power amplifier based on transformer matching is provided. The RF power amplifier includes: a first-stage amplification circuit configured with an input terminal and an output terminal, wherein the output terminal of the first-stage amplification circuit is configured to be connected to one terminal of a main coil of a first transformer; the first transformer configured to include the main coil and a secondary coil, wherein one terminal of the secondary coil is grounded and the other terminal of the secondary coil is connected to a medium-low power mode input terminal of a power switch; the second-stage amplification circuit configured with an input terminal for receiving the amplified RF signal from the first-stage amplification circuit, wherein an output terminal of the second-stage amplification circuit is configured to be connected to a high power mode input terminal of the power switch.

The invention discloses a bandwidth expansion circuit, a chip and a receiver, and belongs to the technical field of analog integrated circuits. The bandwidth expansion circuit comprises a signal compensation equalization module, a first bandwidth boosting module and a second bandwidth boosting module, the signal compensation equalization module is used for carrying out equalization amplification on a high-frequency component in the received first signal and outputting an equalized and amplified second signal; the second bandwidth boosting module is used for feeding back the extracted low-frequency component to the output end of the signal compensation equalization module so as to lower the low-frequency component in the second signal; the first bandwidth boosting module is used for offsetting high-frequency attenuation of the capacitive load on the second signal after the low-frequency component is reduced, and sending a third signal after offsetting the high-frequency attenuation through the signal output end; and the second bandwidth boosting module is also used for extracting a low-frequency component from the third signal. Through the combination of various technologies of compensating channel attenuation, counteracting capacitance influence, lowering low-frequency components and the like, the effective improvement of the circuit bandwidth is realized.