380results about "Amplifier modifications to extend bandwidth" patented technology

The utility model relates to a radio frequency power amplification circuit with a harmonic suppression function and a radio frequency chip. The radio frequency power amplification circuit comprises an input matching unit, a first-stage power amplification unit, a first-stage bias unit, a first-stage power supply unit, an inter-stage matching unit, a second-stage power amplification unit, a second-stage bias unit, a second-stage power supply unit and an output matching unit. According to the utility model, the LC type trap circuits are designed and used in the power supply unit and the inter-stage matching unit, so that secondary, tertiary and high-order harmonic suppression is realized in the radio frequency power amplification circuit; meanwhile, based on LC circuit structures in the power supply unit and the inter-stage matching unit, the inter-stage matching bandwidth is widened, and the linearity of the multi-stage power amplification unit is improved.

The invention discloses an ultra-wideband high-linearity power amplifier with a negative feedback structure. The ultra-wideband high-linearity power amplifier comprises an input matching network, a driving-stage amplifying circuit, an inter-stage matching network, a power-stage amplifying circuit, an output matching network, a negative feedback RLC (Radio Link Control) network and a self-adaptive biasing circuit, an input radio-frequency signal is transmitted to the driving-stage amplification circuit through the input matching network for primary amplification, transmitted to the power-stage amplification circuit through the inter-stage matching network for secondary amplification and output through the output matching network, and the driving-stage amplification circuit comprises a first transistor and a second transistor. The power level amplification circuit comprises a third transistor and a fourth transistor; the self-adaptive bias circuit is used for providing self-adaptive bias voltage for the first transistor and the third transistor; the negative feedback RLC network is used for controlling the gain and bandwidth of the amplifier and comprises a driving-stage negative feedback network and a power-stage negative feedback network. The working bandwidth of the power amplifier can be widened, and the gain, the output power and the linearity of the amplifier can be improved.

The embodiment of the invention provides a radio frequency power amplifier and a radio frequency front-end module. The radio frequency power amplifier comprises a first radio frequency amplification circuit, a second radio frequency amplification circuit, a first transformer, a second transformer and a coupler, the first radio frequency amplification circuit is used for outputting a first radio frequency signal, and the second radio frequency amplification circuit is used for outputting a second radio frequency signal; the first transformer comprises a first coil and a second coil, and the second transformer comprises a third coil and a fourth coil; the first coil is connected with the first radio frequency amplification circuit, and the second coil is coupled with the first coil to output a first coupling signal corresponding to the first radio frequency signal; the third coil is connected with the second radio frequency amplification circuit, and the fourth coil is coupled with the third coil to output a second coupling signal corresponding to the second radio frequency signal; the coupler is used for performing power synthesis on the first coupling signal and the second coupling signal to output a synthesized signal. The radio frequency power amplifier and the radio frequency front-end module have better bandwidth performance.

Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

Apparatuses and systems implementing an amplifier module are described. The amplifier module can include a substrate. A driver amplifier die, a splitter network, an output amplifier die, a bias controller, and a combiner network can be coupled to the substrate. The driver amplifier die can be configured to receive an input radio frequency (RF) signal. The splitter network can be configured to split an intermediate RF signal outputted from the driver amplifier die into first and second RF signals. The output amplifier die can be configured to receive the first and second RF signals. The bias controller can be configured to bias the driver amplifier die and the output amplifier die. The combiner network can be configured to combine first and second outputs of the output amplifier die to generate an output RF signal and terminate at least one harmonic of the output amplifier die's output impedance.

A hybrid coupler has a first port, a second port, a third port, and a fourth port to which a load is connected. An input signal distributor distributes a first input signal that is a radio frequency signal into a second input signal and a third input signal. The second input signal is inputted to a balanced amplifier. The balanced amplifier outputs two amplified radio frequency signals with a phase difference of 90° from each other from two output ends, one of which is coupled to the first port and another one of which is coupled to the second port. The control amplifier amplifies the third input signal and outputs the amplified third input signal from an output end. The output end of the control amplifier is coupled to the third port without any circuit component affecting impedance matching disposed in between.

A radio frequency (RF) power amplifier based on transformer matching is provided. The RF power amplifier includes: a first-stage amplification circuit configured with an input terminal and an output terminal, wherein the output terminal of the first-stage amplification circuit is configured to be connected to one terminal of a main coil of a first transformer; the first transformer configured to include the main coil and a secondary coil, wherein one terminal of the secondary coil is grounded and the other terminal of the secondary coil is connected to a medium-low power mode input terminal of a power switch; the second-stage amplification circuit configured with an input terminal for receiving the amplified RF signal from the first-stage amplification circuit, wherein an output terminal of the second-stage amplification circuit is configured to be connected to a high power mode input terminal of the power switch.

The invention discloses a bandwidth expansion circuit, a chip and a receiver, and belongs to the technical field of analog integrated circuits. The bandwidth expansion circuit comprises a signal compensation equalization module, a first bandwidth boosting module and a second bandwidth boosting module, the signal compensation equalization module is used for carrying out equalization amplification on a high-frequency component in the received first signal and outputting an equalized and amplified second signal; the second bandwidth boosting module is used for feeding back the extracted low-frequency component to the output end of the signal compensation equalization module so as to lower the low-frequency component in the second signal; the first bandwidth boosting module is used for offsetting high-frequency attenuation of the capacitive load on the second signal after the low-frequency component is reduced, and sending a third signal after offsetting the high-frequency attenuation through the signal output end; and the second bandwidth boosting module is also used for extracting a low-frequency component from the third signal. Through the combination of various technologies of compensating channel attenuation, counteracting capacitance influence, lowering low-frequency components and the like, the effective improvement of the circuit bandwidth is realized.

The invention discloses a single-power-supply ultra-wideband temperature compensation low-noise amplifier circuit, and belongs to the technical field of radio frequency microwaves. The circuit is mainly composed of a pre-stage low-noise amplifier module, an inter-stage temperature compensation equalization module and a post-stage driving amplifier module. The temperature compensation equalizer module generates differential voltage related to temperature through a three-stage gallium arsenide diode temperature sensing unit, outputs a control signal through an enhanced FET differential amplification circuit, drives a voltage-controlled attenuation equalizer to dynamically adjust the attenuation amount of a radio frequency signal, and achieves gain stability in a frequency band. Through the collaborative design of a blocking capacitor and a divider resistor, the grid bias of an FET switch is strictly limited in a transconductance linear adjustment interval, and the interval covers 80% of the effective range of the threshold voltage of a gallium arsenide FET tube. The circuit is powered by a single power supply + 5V, stable work of each module is ensured through active bias and a power supply filter network, and the circuit is suitable for extreme temperature environments such as high-frequency communication and radar.

The invention discloses a defect coupling low-noise amplifier. The low-noise amplifier solves the problem that the performance of a low-noise amplifier in the prior art is influenced by a grid source inductance coupling coefficient. Forward coupling of an input inductor and a grid inductor and reverse coupling of the input inductor and a source inductor are achieved through a unique defect coupling transformer matching network, meanwhile, reverse coupling of a grid inductor and the source inductor is achieved, and the coupling coefficient of the grid-source inductor is reduced through coupling counteracting inductance; by combining a differential common-source transconductance amplification stage, a four-order magnetic coupling resonance unit, a differential transconductance amplification stage with a neutralizing capacitor and an output transformer matching network, the characteristics of high gain bandwidth and low noise are realized; simulation and actual tests verify that the low-noise amplifier can effectively reduce the noise coefficient and broaden the input matching range, has good compatibility and wide application prospects based on a conventional integrated circuit production process, can be applied to a phased array system, and can also form a receiver system with other circuits.

The invention belongs to the technical field of stability compensation circuits, and particularly relates to a stability compensation circuit structure of a high-speed operational amplifier, which is characterized by comprising a function module, a first control module, a second control module, a third control module, a fourth control module and a fourth control module, and the function module comprises an input stage, a differential common-base gain stage, a common-base level converter module and an output stage, and the stability compensation assembly comprises a dual-frequency load unit which is matched with the functional module and comprises a low-frequency load branch and a high-frequency load branch which are connected in parallel. Through the synergistic effect of the double-frequency load unit and the pole regulation and control capacitor, gain segmentation regulation and control of low-frequency high gain and high-frequency fast attenuation are achieved, the open-loop gain of the operational amplifier breaks through the limitation of 30dB of an existing HBT single-stage operational amplifier, and meanwhile the problem that high-frequency phase shift changes too fast is effectively restrained; through simulation verification, the phase margin can reach 67 degrees, the stability requirement of 45-60 degrees and above of an analog circuit is met, and the core contradiction that the high-gain bandwidth and the phase margin of an HBT device are difficult to balance is thoroughly overcome.

A broadband Doherty power amplifier is provided, which includes a power divider, a carrier power amplifier circuit, a peak power amplifier circuit, and a load modulation network. The carrier power amplifier circuit includes a carrier input matching circuit, a carrier power amplifier, and a carrier output matching circuit. The peak power amplifier circuit includes a peak input matching circuit, a peak power amplifier and a peak output matching circuit. A resistance value of a system load is ZL. An output impedance of the carrier output matching circuit is Zm and meets Zm=ZL(n+1). An output impedance of the peak output matching circuit is Zp and meets Zp=ZL(n+1) / n. The load modulation network is configured to set an impedance of a combination point to be ZQ, whose resistance value is ZL. A method of implementing a broadband Doherty power amplifier is further provided.

The invention provides an operational amplifier. The operational amplifier comprises a bias module, a chopping module, an enhanced recovery folded cascode module and an output stage module, the enhanced recovery folded cascode module comprises a first input tube group, a second input tube group and a regulation resistor, grid electrodes of the first input tube group and the second input tube group are connected with the output end of the chopping module, a source electrode of the first input tube group is connected to one end of the regulation resistor, a source electrode of the second input tube group is connected to the other end of the regulation resistor, and a source electrode of the second input tube group is connected to the other end of the regulation resistor. The first input tube group and the second input tube group generate different gate-source voltages; the three-path current recovery structure comprises at least two folded node transistors, two circulating current mirror transistors and two shunt transistors, the ratio of the width-to-length ratios of the folded node transistors, the circulating current mirror transistors and the shunt transistors is (1 + x): z (1-x): y (1-x), the value of x is larger than 0 and smaller than 1, and y + z = 1; and the grid electrodes of the matching transistors are connected to the bias voltage provided by the bias module.

This disclosure provides systems, methods, and devices for wireless communications that support enhanced two-stage low-noise amplifiers with feedforward circuitry. In a first aspect, a receiver circuit includes a two-stage low-noise amplifier (LNA) configured to amplify a radio frequency (RF) input signal and output a combined amplified RF input signal to a mixer. The two-stage LNA includes a first gain stage configured to amplify the RF input signal and output the amplified RF input signal to a second gain stage of the two-stage LNA and to the mixer via a feedforward path, and includes the second gain stage configured to amplify the amplified RF input signal received from the first gain stage. The two-stage LNA further includes feedforward circuitry in the feedforward path and configured to provide the amplified RF input signal from the first gain stage to the mixer. Other aspects and features are also claimed and described.

Bias circuits for CMOS power amplifiers are provided. The bias circuit includes a feedback module, a first bias module, and a second bias module. The feedback module has a first input connected to a output common mode voltage, a second input connected to a reference voltage, and an output connected to gates of main amplification transistors in a first differential amplification module; based on a difference between the output common mode voltage and the reference voltage, the feedback module adjusts gate voltages of main amplification transistors until the output common mode voltage is equal to the reference voltage; the first bias module provides bias voltages for the first differential amplification module; the second bias module provides bias voltages for a second differential amplification module. The present disclosure adopts direct negative feedback and cascoded current mirrors, which realize accurate DC gate bias and accurate control of the output common mode voltage.

It is desirable to increase the output power of an amplifier circuit.SOLUTION: A unit amplifier including a first transistor having a first control terminal to which a first input signal is input and configured to generate a first output signal, a second transistor having a second control terminal to which a second input signal is input and configured to generate a second output signal differential from the first output signal, a third transistor provided in parallel with the first transistor and configured to generate a third output signal differential from the first output signal, and a fourth transistor provided in parallel with the second transistor and configured to generate a fourth output signal differential from the second output signal, the first output signal and the fourth output signal are merged and output to a first output transmission line, and the second output signal and the third output signal are merged and output to a second output transmission line.SELECTED DRAWING: Figure 4

The invention provides a current multiplexing type output amplifier. The current multiplexing type output amplifier comprises a current multiplexing type input stage, a first self-biased diode pair, a second self-biased diode pair, a first AB type output stage and a second AB type output stage, wherein the first self-biased diode pair and the second self-biased diode pair are connected with the current multiplexing type input stage; the first AB type output stage is connected with the first self-biased diode pair; according to the invention, two self-biased diode pairs are adopted to replace a floating voltage source in the prior art. When a large pulse signal is input, one diode in each of the two diode pairs is in a cut-off state, transient change current I only flows into or out of the output end from a certain branch, and compared with a traditional amplifier, the slew rate is multiplied under the same bias current condition. In addition, the input stage adopts a current multiplexing type architecture combining a PMOS (P-channel Metal Oxide Semiconductor) and an NMOS (N-channel Metal Oxide Semiconductor), under the same bias current, the equivalent input transconductance is the sum of the transconductance of the PMOS and the transconductance of the NMOS, and the unity gain bandwidth is also multiplied.

The invention discloses a self-adaptive gain and bandwidth operational amplifier circuit, which comprises a biasing circuit, a folded cascode operational amplifier and a source follower, and is characterized in that the folded cascode operational amplifier comprises PMOS (P-channel Metal Oxide Semiconductor) tubes forming a cascode structure and NMOS (N-channel Metal Oxide Semiconductor) tubes forming a cascode structure; the input end of the bias circuit is used for accessing a control signal, and the output end of the bias circuit is used for outputting a first bias voltage and a second bias voltage; the first bias voltage and the second bias voltage are grid voltages provided for a PMOS tube and an NMOS tube which form a cascode structure respectively, the control signal is used for controlling the first bias voltage and the second bias voltage, and the gain and the bandwidth of the operational amplifier circuit change along with the change of the first bias voltage and the second bias voltage. According to the invention, the gain and bandwidth of the operational amplifier circuit can be adaptively adjusted according to the use scene, and the circuit design is simplified, so that the complexity and cost of the circuit are reduced, and the flexibility of the circuit is improved.

To provide an amplifier circuit capable of miniaturization and widening bandwidth.SOLUTION: An amplification circuit includes: a first distributor for distributing an input signal to a first signal and a second signal; a first amplifier for amplifying the first signal; a second amplifier for amplifying the second signal; a combiner for combining the first signal and the second signal, and outputting the combined signal as an output signal; and a CRLH line, connected to at least either a first line connecting the first distributor and the first amplifier or a second line connecting the first distributor and the second amplifier, for adjusting a phase of at least the first signal flowing the first line or the second signal flowing the second line.SELECTED DRAWING: Figure 3

The radio-frequency power supply device of the present invention comprises: a radio-frequency amplification unit that carries out radio-frequency amplification by the switching operation of amplifying elements; and a gate drive unit that inputs a gate signal to the gate terminals of the amplifying elements in the radio-frequency amplification unit to drive the amplifying elements. The amplifying elements in the radio-frequency amplification unit are LDMOSFETs, and the switching elements in the gate drive unit are GaNFETs. By utilizing LDMOSFETs as the amplifying elements, a high-output / high-frequency radio-frequency is output, and by utilizing GaNFETs as the switching elements, individual differences in propagation delay in the switching elements are reduced, and the fluctuation in the dead time DT and pulse width Ton of the gate signal for carrying out PWM control are suppressed to improve accuracy and reproducibility, to improve high-speed response characteristics, and to suppress high-frequency resonance.

Low noise amplifier (LNA) architectures addressing the parasitic challenges in the circuit in order to meet the high gain and bandwidth requirement at higher frequencies are disclosed. The described LNAs include cascode transistors and implement a tunable inductor (Lgate) in series with the gate terminal of a transistor (M2) of the cascode transistors to improve the gain and bandwidth of the LNAs and achieve high gain wideband switching LNAs.

Input buffers of memory devices, memory devices, and memory systems are provided. In one aspect, an input buffer of a memory device includes a first circuit and a second circuit coupled to the first circuit. The first circuit is configured to receive an input voltage and a reference voltage, and generate differential voltages based on the input voltage and the reference voltage. The second circuit is configured to receive the differential voltages from the first circuit, and generate an amplified voltage of the input voltage based on the differential voltages. The second circuit includes an active inductor.

The application discloses a kind of low noise and high gain bandwidth product operational amplifier circuit, it is related to the technical field of electronic circuit, it solves the technical problem of the low noise and high gain bandwidth product operational amplifier circuit urgently needed at present.The circuit includes input stage, bias stage and output stage connected in turn;The output stage is push-pull structure, the bias stage is used to provide bias for the output stage;Feedback loop is arranged between the bias stage and the output stage, for determining the current of the output stage;Phase compensation stage is arranged between the feedback loop and the output stage, for providing phase compensation for output stage.The application not only can reduce the noise of circuit output stage, but also can improve the gain bandwidth product of operational amplifier.

A circuit for synthesizing a negative impedance using a current reuse includes a current source circuit, a differential circuit, and a negative impedance conversion circuit. The current source circuit is configured to provide at least one predetermined current, wherein the current source circuit has a first port and a second port, and the first port of the current source circuit is coupled to a first reference voltage. The differential circuit is coupled between the second port of the current source circuit and a second reference voltage, and is configured to receive a differential input pair and generate a differential output pair, wherein the differential circuit has a differential output port. The negative impedance conversion circuit is coupled between the differential output port and a third reference voltage, wherein the third reference voltage is different from the first reference voltage.

This invention discloses a high-efficiency power amplifier with extended harmonic modulation bandwidth and its modulation method. A harmonic control circuit unit is added to the input terminal of the final stage die of the power amplifier. The extended harmonic control unit includes a second harmonic modulation circuit and a first parasitic element of the power amplifier back hole. The second parasitic element of the source back hole of the final stage transistor participates in modulation. Considering the parasitic effect of the power amplifier and the back hole at the source of the die, the harmonic modulation bandwidth is further widened by adjusting the harmonic control circuit unit, which effectively improves the working efficiency of the amplifier.

The invention relates to the field of integrated circuit design, in particular to a burst mode trans-impedance amplifier circuit for a 50G PON (Passive Optical Network), which comprises a high-frequency signal main circuit and a quick response auxiliary circuit, and the high-frequency signal main circuit realizes high-sensitivity amplification of low-optical-power signals and low-gain amplification of high-optical-power signals through the variable-gain transimpedance-stage amplification circuit and the amplitude-limiting post-stage amplification circuit. The quick response auxiliary circuit realizes ordered quick gain control and quick direct current bias elimination through a quick average value detection circuit controlled by different reset signals generated by the two circuits, and realizes quick response to burst signals together with the high-frequency signal main circuit. The device has the characteristics of high bandwidth, quick response and the like, can stably convert and amplify 50Gbps burst signals, and is suitable for a 50G PON uplink burst mode optical receiver system.

The application discloses a kind of ultra-low voltage wideband low noise amplifiers, it is related to radio frequency signal transceiver technical field.Solve the high-frequency gain attenuation problem in the design of current low power supply voltage wideband low noise amplifier, including two-stage common-source amplifier connected in turn;The input stage amplifier is composed of input matching network, source sense asymmetric current sharing structure, cascaded matching network;The output stage amplifier is composed of MOS single-layer common-source structure, output matching network.The application improves the conventional source degeneration inductance structure, proposes a kind of source sense asymmetric current sharing structure, on the one hand, gain compensation of high frequency band is realized under the premise of not increasing power consumption, on the other hand, circuit uses peak inductance technology to realize wideband matching, gain compensation and reduce noise.In addition, the circuit uses active substrate noise reduction technology, adds high output impedance gate ground MOS tube to improve substrate resistance, reduce the noise change due to power consumption reduction.

The application relates to the radio technology field, in particular to a radio frequency power amplifier and a wireless signal transmitting system. The radio frequency power amplifier comprises a first amplification branch and a second amplification branch. The first amplification branch comprises a first transistor. The gate of the first transistor is used for connecting a radio frequency output device to receive a radio frequency signal emitted by the radio frequency output device. The drain of the first transistor is used for connecting a signal transmitting device. The second amplification branch comprises a second transistor. The gate of the second transistor is used for connecting the radio frequency output device to receive the radio frequency signal emitted by the radio frequency output device. The drain of the second transistor is used for connecting the signal transmitting device. When the radio frequency power amplifier works, the working voltage of the drain of the second transistor is greater than the working voltage of the drain of the first transistor. The impedance of the first amplification branch in a backoff state, the characteristic impedance of a transmission line connected with the drain of the first transistor and the impedance of a combiner are equal, so that the bandwidth generated by the radio frequency power amplifier in the backoff state is ensured to be larger.

The application discloses a kind of ultra-wideband high harmonic suppression power amplifier, including low-frequency power amplification branch, high-frequency power amplification branch, harmonic suppression matching network, the harmonic suppression matching network includes low-frequency harmonic suppression matching network, high-frequency harmonic suppression matching network and common output end;The low-frequency power amplification branch, high-frequency power amplification branch respectively to the frequency different low-frequency band signal, high-frequency band signal in work wideband is carried out power amplification, the low-frequency harmonic suppression matching network, high-frequency harmonic suppression matching network respectively to the impedance matching of fundamental wave in low-frequency band signal, high-frequency band signal after power amplification, while inhibiting second and third harmonic signals.The application solves the problem of low power efficiency and poor high-order harmonic suppression in the prior art.

The application discloses a 2-22GHz ultra-wideband low-noise amplifier based on inductance peaking and RLC negative feedback technology, and is applied to the field of wireless communication. The application designs and manufactures a 2-22GHz ultra-wideband low-noise amplifier GaAs MMIC based on a Sanan P15LN_LNA pHMET transistor, and the 2-22GHz ultra-wideband low-noise amplifier GaAs MMIC has smooth gain, excellent noise and linearity in the working frequency band of the ultra-wideband, the input and output are matched with a standard 50 ohm, the occupied area is small, and the 2-22GHz ultra-wideband low-noise amplifier GaAs MMIC can be used in various radio frequency front ends in 2-22GHz, can be used in sub-6GHz wireless communication application, and is compatible with multiple communication protocols; and can be applied to millimeter wave frequency bands such as communication, phased array radar, millimeter wave imaging, long-distance remote sensing and various situations.