Radio-frequency power amplifier with stack structure

Abstract

The invention discloses a radio-frequency power amplifier with a stack structure. The radio-frequency power amplifier comprises an input matching circuit, an output broadband matching circuit, a biasing circuit A, a biasing circuit B and a power amplification circuit, and the power amplification circuit is formed by stacking of at least two transistors with drains and sources connected. A radio-frequency signal source is connected with a grid electrode of the bottom transistor of the power amplification circuit through the input matching circuit, the biasing circuit B is connected with the grid electrode of the bottom transistor, and the source of the bottom transistor is grounded. The drain of the top transistor of the power amplification circuit is connected with a load through the output broadband matching circuit. Integral linearity, output voltage swing, operation bandwidth, power efficiency, power gain and maximum output power of the radio-frequency power amplifier are increased, and excellent second harmonic inhibition effects are achieved.

Description

Technical field [0001] The invention relates to a power amplifier, in particular to a radio frequency power amplifier. Background technique [0002] The radio frequency power amplifier is an important part of modern wireless communication systems. It can amplify low-power radio frequency signals without distortion, and then radiate them through the antenna. [0003] As the functional modules of portable devices and the modulation methods of modern communication systems become more and more complex, for example, to meet the needs of different users, wireless mobile phones generally support two or more network standards, and in order to satisfy users’ big data It is required that modern communication systems adopt modulation methods such as QPSK, which requires that the power amplifiers used in the new generation communication systems must have higher power efficiency, linearity and bandwidth. [0004] In addition, as the functional modules of portable devices become more and more com...

AI Technical Summary

Problems solved by technology

As the power of the input signal increases, the output voltage signal also becomes larger, which will make the transistor on the uppermost layer of the structure the first to have a breakdown problem

In addition, since the output impedance of the two transistors in the cascode structure is not optimal impedance, the output power is small

Images