Radio-frequency power amplifier with stack structure

A technology of radio frequency power and stacking structure, which is applied in the direction of power amplifiers, high frequency amplifiers, amplifiers, etc., can solve the problems of low output power, transistor breakdown, etc., and achieve improved linearity, increased output voltage swing, and good second harmonic The effect of the wave suppression effect

Inactive Publication Date: 2016-04-20
臻智微芯(广州)技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the power of the input signal increases, the output voltage signal also becomes larger, which will make the transistor on the uppermost layer of the structure the first to have a breakdown problem
In addition, since the output impedance of the two transistors in the cascode structure is not optimal impedance, the output power is small

Method used

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  • Radio-frequency power amplifier with stack structure
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  • Radio-frequency power amplifier with stack structure

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Embodiment Construction

[0030] A preferred embodiment of the present invention is a stacked radio frequency power amplifier, such as Figure 5 As shown, the RF power amplifier includes an input matching circuit 201, an output broadband matching circuit 214, a bias circuit A is 203, a bias circuit B is 202, and four transistors (ie M1 to M4, 204 to 207 in the figure) The drain source is connected to the stacked power amplifier circuit; wherein the radio frequency signal source RFin is connected to the gate of the bottommost transistor 204 of the power amplifier circuit through the input matching circuit 201, and the bias circuit B is connected to 202 The gate of the transistor 204 and the source of the transistor 204 are grounded; the bias circuit A, namely 203, is connected to the gates of the remaining transistors (205 to 207) of the power amplifier circuit, and the gates of the transistors 205 to 207 The gate is connected to the ground through the gate capacitance (208 to 210); the drain of the trans...

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PUM

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Abstract

The invention discloses a radio-frequency power amplifier with a stack structure. The radio-frequency power amplifier comprises an input matching circuit, an output broadband matching circuit, a biasing circuit A, a biasing circuit B and a power amplification circuit, and the power amplification circuit is formed by stacking of at least two transistors with drains and sources connected. A radio-frequency signal source is connected with a grid electrode of the bottom transistor of the power amplification circuit through the input matching circuit, the biasing circuit B is connected with the grid electrode of the bottom transistor, and the source of the bottom transistor is grounded. The drain of the top transistor of the power amplification circuit is connected with a load through the output broadband matching circuit. Integral linearity, output voltage swing, operation bandwidth, power efficiency, power gain and maximum output power of the radio-frequency power amplifier are increased, and excellent second harmonic inhibition effects are achieved.

Description

Technical field [0001] The invention relates to a power amplifier, in particular to a radio frequency power amplifier. Background technique [0002] The radio frequency power amplifier is an important part of modern wireless communication systems. It can amplify low-power radio frequency signals without distortion, and then radiate them through the antenna. [0003] As the functional modules of portable devices and the modulation methods of modern communication systems become more and more complex, for example, to meet the needs of different users, wireless mobile phones generally support two or more network standards, and in order to satisfy users’ big data It is required that modern communication systems adopt modulation methods such as QPSK, which requires that the power amplifiers used in the new generation communication systems must have higher power efficiency, linearity and bandwidth. [0004] In addition, as the functional modules of portable devices become more and more com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/32H03F1/42H03F1/52H03F1/56H03F3/19H03F3/21H03F3/24
CPCH03F1/3205H03F1/42H03F1/523H03F1/56H03F3/19H03F3/21H03F3/245
Inventor 林俊明章国豪张志浩余凯黄亮李嘉进陈锦涛
Owner 臻智微芯(广州)技术有限公司
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