The invention discloses a
radio frequency power
amplifier output matching network suitable for on-
chip full integration, and belongs to the technical field of
wireless communication. The power
amplifier comprises a second
harmonic short-circuit network, a
third harmonic open-circuit network, an
impedance matching network, a
third harmonic short-circuit network, a higher
harmonic suppression network, a first amplification circuit, a fifth parasitic
inductor and a first parasitic
inductor, wherein the fifth parasitic
inductor and the first parasitic inductor are used for packaging gold wires. According to the invention, the use of a grounding
capacitance path is avoided, and the ESD
discharge path of the
radio frequency signal output end is compatible with the output matching network, so that an ESD circuit does not need to be additionally arranged at the
radio frequency signal output end. According to the invention, the total number of the on-
chip inductors is ensured to be five, only one on-
chip inductor is arranged on a main
signal path, and all on-chip inductors can still reach the
harmonic suppression capability of about-70
dBc near an output 1dB compression point under the condition that the Q value is only about 10, and are suitable for on-chip implementation.