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13 results about "Power-added efficiency" patented technology

Power-added efficiency (PAE) is a metric for rating the efficiency of a power amplifier that takes into account the effect of the gain of the amplifier. It is calculated (in percent) as: PAE=100×(POUTᴿF-PINᴿF)/PDCᵀᴼᵀᴬᴸ It differs from most power efficiency descriptions calculated (in percent) as: η=100×POUTᴿF/PINᴰC PAE will be very similar to efficiency when the gain of the amplifier is sufficiently high.

W-band high-backoff-efficiency power amplifier adopting power synthesis technology

PendingCN121907164APower amplifiersDifferential amplifiersPower-added efficiencyMillimetre wave
The invention discloses a W-band high-backoff-efficiency power amplifier adopting a power synthesis technology, and relates to the technical field of millimeter wave integrated circuits, and the power amplifier comprises a power distribution network, a differential driving stage, an inter-stage matching network, a differential output stage, an active load modulation network and a self-adaptive bias network. A radio frequency input signal is divided into two paths of signals which are equal in amplitude and have a phase difference of 90 degrees through the power distribution network, and after the two paths of signals are subjected to differential amplification through the main path and the auxiliary path respectively, in-phase power synthesis output is completed through the active load modulation network. A self-adaptive bias network is introduced for an auxiliary circuit amplifier, a radio frequency input signal is accessed to the input end of the self-adaptive bias network, and auxiliary circuit bias is dynamically adjusted according to the size of input power: an auxiliary circuit is closed or slightly opened when the signal is small, and is completely opened when the signal is large, so that high linearity and high power additional efficiency are simultaneously realized in a wide power range. The power amplifier disclosed by the invention still keeps high efficiency in a backoff region, and is suitable for 5.5 G / 6G communication, radar and imaging systems.
Owner:XIDIAN UNIV

A table-based frequency-domain behavior model parameter extraction method and system

The present application belongs to but is not limited to the technical field of power amplifier chip, and particularly relates to a table-based frequency domain behavior model parameter extraction method and system, comprising: step 1, testing the output characteristics of the chip under different input powers; step 2, extracting the P2D model parameters of the power amplifier chip; step 3, extracting the bias current and third-order intermodulation product model files; step 4, dynamically calculating and realizing the third-order intermodulation and power added efficiency; and step 5, comparing and verifying the P2D model simulation and actual measurement of the power amplifier chip. The present application proposes a behavior model parameter extraction method capable of representing the power added efficiency and third-order intermodulation based on the table-based frequency domain P2D behavior model, and by combining the measured data of the dynamic drain current in the chip, the third-order intermodulation product output power of the chip and the simulation results of the fundamental wave output power of the chip, the dynamic calculation method of the power added efficiency and third-order intermodulation is broken through, and the simulation prediction of the power added efficiency and third-order intermodulation of the table-based frequency domain P2D model of the chip is realized.
Owner:YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE (HUZHOU)

A high-efficiency terahertz voltage-controlled oscillator and a phase-locked loop system based thereon

This invention discloses a high-efficiency terahertz voltage-controlled oscillator and a phase-locked loop system based thereon, applicable to the field of terahertz communication. It addresses the problem that existing technologies cannot achieve maximum output power or maximum conversion efficiency for the oscillator. Based on the traditional cross-coupled oscillator, this invention adds a gate inductor L between the gates of the two transistors. gg Provides two transistors M P M N Operating at maximum power-added efficiency, the improved voltage-controlled oscillator of this invention outputs maximum power or achieves maximum DC-to-RF conversion efficiency. At the same time, the phase-locked loop system using the high-efficiency oscillator structure shown in this invention can eliminate the need for high-loss power dividers and other components required for multiple outputs, thereby saving the overall power consumption of the phase-locked loop.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Push-pull power amplification circuit

ActiveCN114665828BPower-added efficiencyPower mode
The application discloses a push-pull power amplifier circuit, which comprises a first power amplifier, a second power amplifier, an impedance adjustable unit and a first switching switch; a first input end of the impedance adjustable unit is connected with an output end of the first power amplifier, and a second input end of the impedance adjustable unit is connected with an output end of the second power amplifier; a first end of the first switching switch is connected with an input end of the first power amplifier, and a second end of the first switching switch is grounded; when the push-pull power amplifier circuit works in a high-power mode, the first switching switch is turned off, and the impedance adjustable unit forms a first impedance value; when the push-pull power amplifier circuit works in a low-power mode, the first switching switch is turned on, and the impedance adjustable unit forms a second impedance value, and the first impedance value is smaller than the second impedance value. The technical scheme can improve power-added efficiency and gain flatness of the push-pull power amplifier circuit under different power modes.
Owner:RADROCK (SHENZHEN) TECH CO LTD

Specific absorption rate method, apparatus, communication device, and readable storage medium

ActiveCN116805881BTransmissionHigh level techniquesPower-added efficiencyCommunication device
The application relates to a specific absorption rate adjusting method, device, computer equipment, storage medium and computer program product. The method comprises the following steps: acquiring a current bias parameter and a continuous working duration of a power amplifier respectively; determining an actual average specific absorption rate according to a preset mapping relationship, the bias parameter and the continuous working duration; if the actual average specific absorption rate is equal to a preset threshold value, controlling the power amplifier to work at a target bias parameter according to the preset mapping relationship, so that the actual average specific absorption rate is lower than the preset threshold value. By using the method, the actual average absorption rate of the communication equipment can be ensured to be lower than the safety standard preset threshold value of the region, and the power amplifier can work in a state with higher power additional efficiency, so that the transmission efficiency of the communication equipment is improved.
Owner:GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP LTD

A method for inhibiting radio frequency loss of a variable temperature aluminum nitride nucleation layer and epitaxial growth

This invention discloses a variable-temperature aluminum nitride nucleation layer and its epitaxial growth method for suppressing radio frequency loss. The method involves setting the third-order AlN nucleation layer as a low-temperature-high-temperature-low-temperature layer and introducing in-situ crystalline SiN between the AlN interfaces. x Layer, this in-situ crystalline SiN x The layer effectively blocks Al / Ga interface diffusion, reducing the probability of parasitic conductive channel formation and effectively reducing RF device loss. The introduction of two low-temperature AlN nucleation layers effectively slows down Al / Ga diffusion, avoids the formation of conductive channels in the substrate, reduces leakage current during RF operation, and improves device power-added efficiency (PAE). Through three-stage temperature control, high-density nucleation and diffusion suppression are achieved in the low-temperature seed layer. The medium-high temperature crystallization layer significantly improves crystal quality and compresses dislocation density to a low level. Finally, the low-temperature high-resistivity layer effectively locks carbon atoms and improves resistivity, thereby achieving a synergistic improvement in the electrical and structural properties of the material.
Owner:XIDIAN UNIV

A bidirectional amplifier and electronic device

The application provides a bidirectional amplifier and electronic equipment, comprising a low-noise amplification module, a power amplification module and a multiplex matching network module, the multiplex matching network module comprising a three-coil transformation unit, a first switch and a second switch; the first switch and the second switch switch the second winding and the third winding in the three-coil transformation unit to be in-phase coupled according to a sending voltage signal, and switch the second winding and the third winding to be anti-phase coupled according to a receiving voltage signal, so as to realize high isolation of the bidirectional amplifier sending signal, power additional efficiency of a high-frequency output signal and high gain and low noise of a receiving signal. Since the first switch and the second switch are both embedded into the three-coil transformation unit, no additional chip area is occupied, so that the advantages of high area efficiency and low cost are achieved.
Owner:FUDAN UNIVERSITY

Bayesian optimization based multi-octave power amplifier design method

The application discloses a multi-octave power amplifier design method based on Bayesian optimization, constructs a new acquisition function, and uses a Bayesian optimization algorithm to design a multi-octave power amplifier. Through data training, model fitting, prediction point classification, and sampling processes, a set of optimal parameters are obtained as power amplifier coefficients. The application of the method enables the PA to obtain considerable performance in a relatively short optimization time. In the range of 0.6-2.8 GHz, the output power of the power amplifier is greater than 40.3 dBm, the PAE is greater than 62%, and the gain is greater than 10.3 dB. The acquisition function CG-GPUCB is applied to the optimization of the PA circuit for the first time as an acquisition function of the Bayesian optimization algorithm, and the long optimization time is overcome. In a relatively short optimization time, the designed PA has a wider bandwidth under the conditions that the output power, power additional efficiency, gain and the like meet the index requirements.
Owner:HANGZHOU DIANZI UNIV

Operating a power management circuit based on modulation bandwidth and power backoff

PCT designated stageWO2026054938A1Power amplifiersAmplifier modifications to raise efficiencyModulation bandwidthPower-added efficiency
Operating a power management circuit based on modulation bandwidth and power backoff is provided. The power management circuit includes a transceiver circuit, a power management integrated circuit (PMIC), and a power amplifier circuit that are configured to amplify a radio frequency (RF) signal for transmission in a wireless device. Herein, the power management circuit can be configured to operate under different operating conditions that are defined by modulation bandwidth of the RF signal and power backoff of the power amplifier circuit. The transceiver circuit is configured to adapt configurations and / or controls for the PMIC and / or the power amplifier circuit based on the different operating conditions. As a result, it is possible to improve power added efficiency (PAE), linearity, and / or noise tolerance in the power management circuit under the different operating conditions.
Owner:QORVO US INC

A high-efficiency high-linearity dual-frequency power amplifier

The application relates to the field of radio frequency and microwave electronic technology and discloses a high-efficiency high-linearity dual-frequency power amplifier which comprises an input duplexer, a high-frequency power amplifier, a low-frequency power amplifier, an analog voltage source, a power supply and an output duplexer; two input ends of the input duplexer are connected with a radio frequency input end; two output ends of the input duplexer are connected with an input end of the high-frequency power amplifier and an input end of the low-frequency power amplifier respectively; an output end of the high-frequency power amplifier and an output end of the low-frequency power amplifier are connected with two input ends of the output duplexer respectively; two output ends of the output duplexer are connected with a radio frequency output end; the analog voltage source is connected with a bias voltage end of the high-frequency power amplifier and a bias voltage end of the low-frequency power amplifier respectively; and the power supply is connected with a power supply end of the high-frequency power amplifier and a power supply end of the low-frequency power amplifier respectively. The application can realize high power additional efficiency and high linearity simultaneously under dual frequency bands.
Owner:CHENGDU GANIDE TECH