4 results about "Power-added efficiency" patented technology

This invention discloses a high-efficiency terahertz voltage-controlled oscillator and a phase-locked loop system based thereon, applicable to the field of terahertz communication. It addresses the problem that existing technologies cannot achieve maximum output power or maximum conversion efficiency for the oscillator. Based on the traditional cross-coupled oscillator, this invention adds a gate inductor L between the gates of the two transistors. gg Provides two transistors M P M N Operating at maximum power-added efficiency, the improved voltage-controlled oscillator of this invention outputs maximum power or achieves maximum DC-to-RF conversion efficiency. At the same time, the phase-locked loop system using the high-efficiency oscillator structure shown in this invention can eliminate the need for high-loss power dividers and other components required for multiple outputs, thereby saving the overall power consumption of the phase-locked loop.

The application discloses a push-pull power amplifier circuit, which comprises a first power amplifier, a second power amplifier, an impedance adjustable unit and a first switching switch; a first input end of the impedance adjustable unit is connected with an output end of the first power amplifier, and a second input end of the impedance adjustable unit is connected with an output end of the second power amplifier; a first end of the first switching switch is connected with an input end of the first power amplifier, and a second end of the first switching switch is grounded; when the push-pull power amplifier circuit works in a high-power mode, the first switching switch is turned off, and the impedance adjustable unit forms a first impedance value; when the push-pull power amplifier circuit works in a low-power mode, the first switching switch is turned on, and the impedance adjustable unit forms a second impedance value, and the first impedance value is smaller than the second impedance value. The technical scheme can improve power-added efficiency and gain flatness of the push-pull power amplifier circuit under different power modes.

This invention discloses a variable-temperature aluminum nitride nucleation layer and its epitaxial growth method for suppressing radio frequency loss. The method involves setting the third-order AlN nucleation layer as a low-temperature-high-temperature-low-temperature layer and introducing in-situ crystalline SiN between the AlN interfaces. x Layer, this in-situ crystalline SiN x The layer effectively blocks Al / Ga interface diffusion, reducing the probability of parasitic conductive channel formation and effectively reducing RF device loss. The introduction of two low-temperature AlN nucleation layers effectively slows down Al / Ga diffusion, avoids the formation of conductive channels in the substrate, reduces leakage current during RF operation, and improves device power-added efficiency (PAE). Through three-stage temperature control, high-density nucleation and diffusion suppression are achieved in the low-temperature seed layer. The medium-high temperature crystallization layer significantly improves crystal quality and compresses dislocation density to a low level. Finally, the low-temperature high-resistivity layer effectively locks carbon atoms and improves resistivity, thereby achieving a synergistic improvement in the electrical and structural properties of the material.