10results about "Phase-splitters" patented technology

A radio frequency (RF) power amplifier based on transformer matching is provided. The RF power amplifier includes: a first-stage amplification circuit configured with an input terminal and an output terminal, wherein the output terminal of the first-stage amplification circuit is configured to be connected to one terminal of a main coil of a first transformer; the first transformer configured to include the main coil and a secondary coil, wherein one terminal of the secondary coil is grounded and the other terminal of the secondary coil is connected to a medium-low power mode input terminal of a power switch; the second-stage amplification circuit configured with an input terminal for receiving the amplified RF signal from the first-stage amplification circuit, wherein an output terminal of the second-stage amplification circuit is configured to be connected to a high power mode input terminal of the power switch.

An apparatus includes a first power amplifier having a negative output terminal coupled to a first primary winding of a distributed transformer and a positive output terminal coupled to a second primary winding of the distributed transformer, a second power amplifier having a negative output terminal coupled to a third primary winding of the distributed transformer and a positive output terminal coupled to a fourth primary winding of the distributed transformer, a first conductive element connected between the negative output terminal of the first power amplifier and the negative output terminal of the second power amplifier, and a second conductive element connected between the positive output terminal of the first power amplifier and the positive output terminal of the second power amplifier.

An integrated circuit comprises an integrate-and-hold circuit including a degeneration network having a bias terminal, and a switch coupled between the bias terminal and a reference terminal, the switch configured to, in a hold phase of the integrate-and-hold circuit, connect the bias terminal to the reference terminal, and outside the hold phase of the integrate-and-hold circuit, disconnect the bias terminal from the reference terminal.

This utility model relates to the field of radio frequency communication technology and discloses a multi-band broadband power amplifier module, including a single-chip module, a thermal management module, and a power management module. The single-chip module integrates a dynamic broadband matching module, a multi-stage push-pull amplification module, and a digital predistortion correction module. The output terminal of the dynamic broadband matching module is electrically connected to the input terminal of the multi-stage push-pull amplification module, and the output terminal of the multi-stage push-pull amplification module is electrically connected to the input terminal of the digital predistortion correction module. The output terminal of the digital predistortion correction module is electrically connected to the input terminal of the dynamic broadband matching module. The single-chip module is bidirectionally electrically connected to the thermal management module. In this utility model, by adopting an integrated design, the dynamic broadband matching module, the multi-stage push-pull amplification module, and the digital predistortion correction module are integrated onto a single chip, significantly reducing the overall size, lowering production costs, and improving power amplification efficiency.

A system includes a radio frequency (RF) receiver having a low noise trans-impedance amplifier (LNTA) (101). The LNTA is configured to receive a single-ended RF voltage signal and convert the RF voltage signal to a differential current mode signal. Further components in an RF signal chain are configured to receive the differential current mode signal. The LNTA includes cascode amplifiers (N1l, N2, N3, N4, P1, P2, P3, P4).

In some embodiments, a power amplifier circuit can include a power amplifier having an input node and an output node, and a load modulation circuit coupled to the output node of the power amplifier. The power amplifier circuit can further include a control profile configured to provide information for generating a control signal for the load modulation circuit, and a control circuit configured to generate and provide the control signal to the load modulation circuit based on the control profile. In some embodiments, the control profile can be further configured to provide information for generating a control signal for a phase compensation circuit.

Methods and apparatuses for amplifying a signal via an amplifier circuit for transmission are described. An example amplifier circuit generally includes an amplifier configured to amplify a signal for wireless transmission and including a first transistor (Q 2p ) and a second transistor (Q 2n ). The amplifier circuit also includes a transformer coupled to an output of the amplifier, a first coil (L1) coupled to the first transistor (Q 2p ) and inductively coupled to the transformer, and a second coil (L2) coupled to the second transistor (Q 2n ) and inductively coupled to the transformer.

A device for controlling photovoltaic modules according to one aspect includes: a communication unit configured to receive data from a plurality of photovoltaic modules included in a plurality of photovoltaic module arrays; and a processor configured to monitor and control an operation status of the plurality of photovoltaic modules based on data received through the communication unit, wherein the communication unit may include a coupling unit that connects the plurality of photovoltaic module arrays to the processor in a many-to-one manner.

A system includes a radio frequency (RF) receiver having a low noise trans-impedance amplifier (LNTA) (400). The LNTA is configured to receive a single-ended RF voltage signal and convert the RF voltage signal to a differential current mode signal (OUTP, OUTM). The LNTA is configured for adjustable gain by controllable circuits (410, 420).

The application discloses a high-voltage power amplifier with over-temperature and over-current protection circuit and relates to the technical field of integrated circuits.The application comprises a high-voltage operational amplifier core unit and an adaptive protection circuit unit.The high-voltage operational amplifier core unit comprises a rail-to-rail input stage, a gain amplification stage and an AB class push-pull output stage which are cascaded in sequence.The AB class push-pull output stage comprises a PMOS upper power tube and an NMOS lower power tube.The adaptive protection circuit unit comprises a PMOS current-limiting protection circuit, an NMOS current-limiting protection circuit and an over-temperature protection circuit.The PMOS current-limiting protection circuit is used for generating a high-voltage domain over-current control signal when the PMOS upper power tube overflows.The NMOS current-limiting protection circuit is used for generating a low-voltage domain over-current control signal when the NMOS lower power tube overflows.The over-temperature protection circuit is used for generating high-voltage and low-voltage domain over-temperature shutdown signals when the amplifier over-temperature.Finally, the corresponding over-current control signals and over-temperature shutdown signals are logically synthesized to generate a gate clamping signal.