The invention discloses a preparation method of a high-
gain photoelectric
detector, and relates to the technical field of photoelectric detectors, and the method comprises the steps: S1, structural design: selecting a corresponding photoelectric material to manufacture an
avalanche photodiode according to the application scene requirements and the
working environment of the
detector, the method comprises the following steps: S1, preparing a
semiconductor wafer, S2, preparing the
wafer, namely cleaning the
semiconductor wafer by using an ultrasonic
cleaning agent and a
chemical solution, S3, treating the material, namely performing
doping operation, and injecting ions containing
phosphorus and
boron elements into a
semiconductor material by using an
ion accelerator, S4, performing
gain optimization, namely optimizing a circuit by using a
Cascode technology, connecting circuits of two transistors, and performing
gain optimization. S5, packaging and integrating: packaging the manufactured
chip into a shell; according to the photoelectric
detector, the circuit of the semiconductor is optimized by using a
Cascode technology, the gain of the photoelectric detector can be improved by adjusting the bias
voltage of the circuit, configuring the gain circuit and
processing external signals, and meanwhile, the influence on
output impedance is reduced, so that the high-frequency performance and the
linearity of the whole circuit are improved.