Resonator and filter

A resonator and filter technology, applied in the direction of electrical components, impedance networks, etc., can solve problems such as adverse effects of resonator performance, and achieve the effect of reducing input impedance

Active Publication Date: 2013-06-19
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problem that the performance of the resonator is adversely affected due to the large input impedance of the resonator in the related art, the present invention proposes a resonator and a filter, which can effectively reduce the input impedance of the resonator, thereby improving the performance of the resonator and filter. performance

Method used

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Embodiment Construction

[0058] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art fall within the protection scope of the present invention.

[0059] According to an embodiment of the present invention, a resonator is provided.

[0060] A resonator according to an embodiment of the present invention includes:

[0061] base;

[0062] a lower electrode layer, located above the substrate;

[0063] Piezoelectric layer, the lower electrode layer is located under the piezoelectric layer in whole or in part;

[0064] the upper electrode layer, located above the piezoelectric layer;

[0065] The connection st...

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Abstract

The invention discloses a resonator and a filter. The resonator comprises a substrate, a bottom electrode layer, piezoelectric layers, top electrode layers and a connecting structure, wherein the bottom electrode layer is positioned on the upper side of the substrate; the bottom electrode layer is positioned on the lower sides of the piezoelectric layers integrally or partially; the top electrode layers are positioned on the upper sides of the piezoelectric layers,; and the connecting structure is positioned outside an effective area of the resonator and is in electric contact with the bottom electrode layer and/or the top electrode layers. According to the resonator, the connecting structure is arranged additionally to be connected with at least electrode layer, so that the input impedance of the resonator can be reduced effectively to improve the performance of the resonator and the filter (a Q value of the resonator is prevented from being reduced); and the connecting structure is positioned outside the effective area of the resonator, so that the normal operation of the resonator is not influenced.

Description

technical field [0001] The present invention relates to the field of resonator processing, and in particular, to a resonator and a filter. Background technique [0002] Thin-film piezoelectric bulk-wave resonators made by using the longitudinal resonance of piezoelectric films in the thickness direction have become a feasible alternative to surface acoustic wave devices and quartz crystal resonators in many aspects such as high-speed serial data applications. RF front-end bulk-wave piezoelectric filters / duplexers offer superior filtering characteristics such as low insertion loss, steep transition band, large power handling, and strong resistance to electrostatic discharge (ESD). High frequency thin film piezoelectric bulk wave oscillator with ultra-low frequency temperature drift, low phase noise, low power consumption and large bandwidth modulation range. In addition, these miniature thin-film piezoelectric resonators use complementary metal-oxide-semiconductor (CMOS)-com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/15H03H9/02H03H9/54
Inventor 庞慰张孟伦张浩
Owner TIANJIN UNIV
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