63 results about "Power handling" patented technology

FinFET multi-diode thyristor switches for protecting high data rate communication system interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and / or reduces total on-state resistance.

A method, apparatus, and a computer-readable storage medium are provided for transmission power handling with RF impairments. A method, apparatus, and a computer-readable storage medium are provided for adjusting maximum power reduction (MPR) values based on transmitter and receiver impairments. transmission power handling with RF impairments. In an example implementation, the method may include determining, by a user equipment, at least a first maximum power reduction (MPR) value for a radio link, the determining based at least on one or more receiver impairments associated with a receiver of the radio link; adjusting, by the user equipment, a transmit power and a quality of a signal being transmitted on the radio link based at least on the first MPR value; and transmitting, by the user equipment, the signal using the adjusted transmit power. In another example implementation, the method may include transmitting, by a gNB, a first MPR value or a parameter indicative of the first MPR value of a radio link to a user equipment; and receiving, by the gNB, a signal from the user equipment, wherein a transmit power and a quality of the signal is adjusted at the user equipment based at least on the first MPR value.

Embodiments of the invention relate to an acoustic resonator device for excitation of bulk acoustic waves (BAW) with enhanced power handling capabilities. The acoustic resonator device has a composite piezoelectrical platelet which comprises a first piezoelectrical layer and a second piezoelectric layer with the same or similar acoustic impedance but with opposite phase wave excitation for a given wave polarization. The dimensions of the composite piezoelectrical platelet for a given static capacitance can hence be increased, while maintaining a wide bandwidth of the acoustic resonator device.

A device useful as a switch including an input waveguide coupled to an output waveguide; a first diode circuit integrated with the input waveguide at a first termination; a second diode circuit integrated with the output waveguide at a second termination; and wherein the biasing the diode circuits switches the switch between an off state and an on state and achieves high isolation in the off state by absorbing input power in, reflecting the input power from, and frequency multiplying the input power using the diodes in the diodes circuits when the input power is received from the input waveguide. In one embodiment, the switch is a tunable, solid-state SPST switch for Gband radar applications.

A wearable smart insole for a user having foot having a planter arch and a medial plantar artery (MPA) along the plantar arch is provided. The insole has at least one optical sensor disposed in the insole along the MPA, a power handling circuit, an energy storage module operatively coupled with the power handing circuit to provide power to the optical sensor. The optical sensor is disposed along the MPA in the insole and provides a signal for obtaining heart rate data, blood oxygen saturation data and blood glucose measurements. Two optical sensors may be provided along the MPA to provide signals for calculating blood pressure. A third optical sensor may be provided along the lateral plantar artery to provide signals to detect diabetes or arterial disease.

A modular multilevel flying capacitor (MMFC) converter that seamlessly integrates features of flying capacitor converter and conventional modular multilevel converters. The converter achieves higher voltage and power handling capabilities, along with substantial cost, weight, and size reductions for High Voltage DC (HVDC) systems as the MMC arms within the MMFC converter only sustain half of the full DC voltage. Therefore, the required number of expensive submodules is halved, and size and weight of the total capacitors can be significant reduced, irrespective of the submodule topologies, whether the submodules contain half-bridge or full-bridge switch poles or T-type converter submodule or full-bridge T-type converter submodule or any other submodule topologies. The switches for MMC submodules can be implemented with any type of fully controllable switches made of any types of semiconductor materials.

This utility model discloses a sound-generating device and electronic device, relating to the field of electroacoustic transduction technology. The sound-generating device includes a mounting component, a magnetic circuit system, a vibration system, and a rear cover. The mounting component has a first end and a second end connected together, and a mounting cavity is formed within the mounting component. The magnetic circuit system is disposed within the mounting cavity and has a magnetic gap. The vibration system includes a diaphragm and a voice coil connected to the diaphragm. The periphery of the diaphragm is connected to the first end and is opposite to and spaced from the magnetic circuit system. A first rear cavity communicating with the magnetic gap is formed between the diaphragm and the magnetic circuit system. The end of the voice coil furthest from the diaphragm is suspended within the magnetic gap. The rear cover is connected to the second end and is opposite to and spaced from the magnetic circuit system. A second rear cavity is formed between the rear cover and the magnetic circuit system. A ventilation channel communicating with the first and second rear cavities is formed between the mounting component and the magnetic circuit system. This utility model's sound-generating device effectively reduces the product's F0 (Fever), improves the product's power handling capacity, and enhances acoustic performance.

This invention provides an automatic tuner for a loop antenna used in shortwave communication, belonging to the field of shortwave communication technology. This tuner aims to solve the problems of existing automatic tuners for loop antennas, such as difficulty in balancing versatility and high power performance, and poor high-voltage withstand capability. The tuner includes: a matching circuit, which includes couplers for shunting forward and reverse radio frequency signals; a tuning actuator, which includes an oil-immersed variable capacitor and a drive mechanism; and a main control circuit. Based on the signal shunted by the coupler, the main control circuit autonomously calculates the standing wave ratio (VSWR) and generates a control signal to control the matching circuit and tuning actuator independently of the radio transceiver, thus completing automatic tuning. This invention improves voltage withstand and power handling capability by using an oil-immersed variable capacitor, and achieves universal tuning through the autonomous control of the main control circuit, overcoming the shortcomings of existing technologies and offering the advantages of high power, high reliability, and strong versatility.

High power monolithic microwave integrated circuit (MMIC) differential single pole double throw switches utilizing a series of transistors formed by a gallium nitride (GaN) foundry process. The differential switches of the present disclosure allow for larger power handling capability and wideband operation while further providing differential amplitude and phase matching.

The invention discloses an antenna tuning switch structure. The antenna tuning switch structure comprises an epitaxial substrate, a gate structure, a source electrode and a drain electrode, the epitaxial substrate comprises a semiconductor substrate and a nitride heterostructure formed on the semiconductor substrate, two-dimensional electron gas is arranged in the nitride heterostructure, the gate structure is arranged on the nitride heterostructure, and the source electrode and the drain electrode are arranged on the opposite sides of the gate structure respectively. One of the source electrode and the drain electrode is connected with the antenna, the other of the source electrode and the drain electrode is connected with the tuning element, and the gate structure is used for controlling electric connection between the tuning element and the antenna. Therefore, the antenna tuning switch structure can improve the breakdown voltage, has low leakage current performance and high-power processing capability based on the two-dimensional electron gas, and is suitable for a high-power environment.

This invention provides a cavity-enhanced germanium-silicon photodetector based on silicon corner mirrors, comprising a silicon substrate layer, a germanium absorption region on the silicon substrate layer, and silicon corner mirrors located on the front and rear sides of the germanium absorption region; a germanium via layer is provided above the germanium absorption region, the via layer having a plurality of germanium vias, and a signal electrode is provided at the top of the germanium via layer; silicon via layers are provided on the left and right sides of the germanium absorption region, the silicon via layers having a plurality of silicon vias, and a ground electrode is provided at the top of the silicon via layers; two silicon nitride waveguides are arranged opposite each other, extending from the opposite outer sides of the two silicon via layers toward the sides of the germanium absorption region. The technical solution of this invention has excellent high-power processing capability, achieves polarization-insensitive detection, effectively overcomes the contradiction between responsivity and bandwidth, is fully compatible with CMOS manufacturing processes, and is conducive to large-scale integration and mass production.

Wafer-bonded inductors, transformers, and related electronic components can be used in power electronics and provide low conduction loss in the MHz-GHz frequency range. The wafer bonding fabrication process and its thermal requirements offer relatively simple and low cost manufacturing. The resulting devices offer a unique combination of high power handling at high frequencies and small form factor.

A USB-C to MoCA converter includes a USB-C interface for receiving and transmitting USB-C power and data, a MoCA interface handling the reception and transmission of USB-C power and data. A MoCA data / power handling converter is configurated to manage MoCA power and data in both directions. A USB / MoCA data converter is coupled between USB-C interface and MoCA interface to determine the communication protocol and to process incoming USB-C data signals into MoCA data formats and vice versa. A power converter is coupled between USB-C interface and MoCA interface to convert USB-C voltage of the USB-C power to fit MoCA voltage. A USB-C power delivery controller is connected between USB-C interface and the power converter to power a device connected to MoCA interface. The USB-C to MoCA converter enables data and power exchange between USB-C and MoCA interfaces for promoting compatibility and smooth operation.

An optical ranging and detection system enables a reconfigurable very wide field of view, high sampling of spatial points per second, and high optical power handling by effectively combining different wavelength, time and frequency encoding, and spatial selectivity using an architecture. A transmitter is capable of generating multiple narrow beams, encoding different beams, and transmitting in different spatial directions. A receiver can distinguish and extract range and reflectivity information of the reflected beams. Three-dimensional imaging of an environment is achieved by scanning the field of view of the transmitter. Control and signal processing electronics fabricated in a chip are packaged together with a chip containing photonic components of the ranging system. The optical ranging and detection system generates terahertz beams in addition to optical beams, and the combined two beams allow reconfigurable spectral analysis.

The utility model discloses an asymmetric filter multi-way switch and communication equipment. The asymmetric filter multi-way switch comprises a switch subset, a segmented filter bank, a second switch subset and a control circuit, wherein the high-frequency connection part in the first switch subset is connected with the input end of the segmented filter bank through one switch, and the low-frequency connection part in the first switch subset is connected with the input end of the segmented filter bank through at least two switches; the output end of the segmented filter bank is connected with the second switch subset; the control circuit is connected with the first switch subset and the second switch subset. The communication device comprises an asymmetric filter multi-way switch. According to the embodiment of the utility model, through the arrangement of the asymmetric switch structure, the number of single-end parallel sub-switch units in the whole switch structure can be reduced, so that the insertion loss caused by on-resistance and off-capacitance is reduced, and the insertion loss, the isolation degree and the bearing power of the switch can be greatly improved.

The invention discloses a laser output head and a laser. The laser output head comprises an optical fiber and a cooling assembly. The cooling assembly comprises an inner pipe, a cooling loop spiral pipe and a shell. The inner tube is a light-transmitting tube and wraps the optical fiber; the inner pipe is sleeved with the cooling loop spiral pipe, the cooling loop spiral pipe is sleeved with the outer shell, and a liquid inlet and a liquid outlet which are communicated with the cooling loop spiral pipe are formed in the outer shell; wherein the inner tube is used for transmitting return light or stray light in the laser output head into the cooling loop spiral tube, and the cooling loop spiral tube is used for cooling the return light or the stray light. The structure realizes photo-thermal management through a light-transmitting conduction mode and a spiral heat exchange structure, prevents the inner tube from absorbing light and heating and burnout optical fibers, solves the problem of internal heat dissipation of the laser output head, and improves the thermal stability and integration efficiency of a laser system and the power bearing capacity of the laser output head.

The invention relates to an elastic wave device which comprises a supporting substrate, a piezoelectric layer and an IDT electrode. An IDT electrode formed on the main surface of the piezoelectric layer and configured to excite an elastic wave having a wavelength of lambda; the piezoelectric layer is laminated on the supporting substrate; wherein the supporting substrate is made of metal, and the metal material needs to meet the relational expression: wherein, E is the material density, and E is the material Young modulus and Poisson's ratio. By adopting the metal material meeting the relational expression as the supporting substrate, on one hand, the heat dissipation capability of the substrate can be remarkably improved, and the power endurance capability of the device is improved; on the other hand, the metal meeting the relational expression has high acoustic impedance, and the Q value can be improved.

The invention provides a radio frequency device and a preparation method thereof, and the preparation method comprises the steps: providing a second substrate structure, inverting a semiconductor structure where a first substrate structure is located, bonding the semiconductor structure on the second substrate structure, and carrying out the thinning and removal of bottom silicon from the back surface of the bottom silicon, and stopping the thinning and removal of the bottom silicon at the back surface of a middle insulating layer. The second substrate structure is used as a new substrate of the radio frequency device, and the middle insulating layer in the first substrate structure is used for removing a stop layer, thinning and removing bottom silicon, so that the parasitic capacitance of the first substrate structure can be remarkably reduced, the negative effect of the parasitic capacitance of the substrate is effectively eliminated, the coupling effect of the substrate capacitance is eliminated, and the reliability of the radio frequency device is improved. Signal leakage is reduced, the overall breakdown voltage uniformity of the radio frequency switch is improved, and the power processing capability is improved, so that the radio frequency performance of a radio frequency switch device is improved.

The invention discloses a surface treatment method of a high-specific-gravity tungsten alloy, which comprises the following steps: firstly, carrying out plasma treatment on the high-specific-gravity tungsten alloy for 10-15 minutes at the treatment power of 350-400 W, and after the treatment is finished, preheating for 1 hour at the temperature of 60-65 DEG C to obtain the preheated high-specific-gravity tungsten alloy; preparing a modified liquid: adding 1-3 parts of a silane coupling agent KH550, 2-4 parts of a sodium stearate agent and 3-5 parts of a modified additive into 5-8 parts of a chitosan solution, and fully stirring to obtain the modified liquid. According to surface treatment of the high-specific-gravity tungsten alloy, the high-specific-gravity tungsten alloy is subjected to plasma treatment and then subjected to ultrasonic modification treatment through a modification solution, a sodium stearate agent in the modification solution is matched with a modification additive and a silane coupling agent KH550, and the acid corrosion resistance stability of a high-specific-gravity tungsten alloy product is optimized through blending and synergistic effects of the raw materials; the acid corrosion stability under different concentration conditions is optimized.

The invention belongs to the technical field of microwave antennas, and discloses a broadband high-power strip line microwave network circuit. The Wilkinson single-section power divider is additionally connected with the broadside coupler, the coupling end is connected with the non-isolated power division network, and the tail end of the network is connected with the multiple loads, so that the problem of power resistance of the broadband strip line microwave network is solved; under the condition that the size of a main path is not greatly increased, the working bandwidth of a single-section power divider is improved to octave from 15%, and the average power resistance of a network is increased to dozens of watts.

An acoustic resonator (100) provides high-voltage electrical coupling and exhibits improved power handling characteristics and Q factor at the resonant frequency. The acoustic resonator (100) includes an interdigital transducer (IDT) (102) formed on a piezoelectric substrate (104). Each staggered finger electrode of the IDT (102) has a multilayer structure comprising a first layer (200) and a second layer (202), the second layer being disposed above the first layer (200) and separated from the first layer (200) by one or more bases (204). The thickness and width of the first layer (200), the second layer (202), and the one or more bases (204) are defined based on the wavelength of the sound wave to be generated by the IDT (102) at the resonant frequency of the acoustic resonator (100). The thickness of the first layer (200) is less than the thickness of each of the one or more bases (204) and the second layer (202), and the width of the one or more bases (204) is less than the width of each of the first layer (200) and the second layer (202).

The application discloses a system and a control method for improving the transient power bearing capacity of a slow-start circuit MOSFET, and the method comprises the following steps: step 1) coupling two opposite surfaces of an active cooling device to the surface of a MOS power device and the surface of a power supply system heat dissipation device respectively; step 2) after detecting a starting signal, applying a current pulse of a predetermined length to the active cooling device before the slow-start operation starts, so that the active cooling material generates a refrigeration effect and reduces the junction temperature of the MOS power device by a predetermined temperature value; step 3) performing the slow-start operation when the MOS power device is in a low-temperature state; and step 4) turning off the active cooling device after the MOS power device completes the slow-start operation. The system comprises the active cooling device and a control circuit. According to the inverse calculation of the transient thermal resistance, the transient power loss bearing capacity of the device can be improved by about 1 times by reducing the junction temperature of the MOS device by 30-60 degrees Celsius in advance.

This invention belongs to the field of microwave passive device technology, and relates to a P-band eight-layer ferrite parallel water-cooled ultra-high power Y-junction circulator, including a waveguide Y-junction three-way cavity, a four-layer copper folded water-cooling plate, etc.; it adopts a comprehensive technical solution such as a full-height waveguide Y-junction cavity and symmetrical loading of eight-layer ferrite sheets, which significantly improves the peak power handling capacity, enabling forward peak power transmission of not less than 3MW; the average power capacity is greatly improved, meeting the requirements for long-term continuous high-power stable operation; the heat dissipation uniformity is excellent, suppressing device performance drift; the RF transmission performance is excellent, achieving stable RF transmission characteristics; the temperature stability and operational reliability are improved; the adaptability to extreme conditions is strong; and the structure is compact, with excellent integration, possessing superior system integration and engineering applicability.

1. The name of the design product: power control device and its main body. 2. The use of the design product: power control device and power control device main body for controlling propeller. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: design 1 perspective view. 5. Design 1 is designated as the basic design. 6. Other circumstances that need to be explained: the dotted line in the figure represents the unclaimed part of the design, indicating the partial appearance.

An antenna element suited for direction finding (DF) with omni-directional radiation patterns utilizing a pair of chevron slots fed using a ridged waveguide magic tee (magic-t) and connected microstrip probes. The provided antenna element provides improved performance, power handling, and improved bandwidth compared to current monocone and / or slot antenna elements. The antenna element may be further realized utilizing additive manufacturing processes in combination with standard metal and polymer production techniques.

The loudspeaker voice coil diaphragm structure provided by the invention has the characteristics that the diaphragm is laminated after being formed in a split manner, and the voice coil framework and the diaphragm are integrally formed, and the complete diaphragm is decomposed into at least two separated diaphragms for forming, so that the requirement on the ductility of a single material is effectively reduced, the process problem of large-angle stretching is avoided, and the production efficiency is improved. A reinforcing structure is naturally formed at the fitting part; the voice coil framework and the vibrating diaphragm body are integrally formed, so that a glue bonding interface is eliminated, the connection reliability and the structural strength are improved, and the vibration quality is reduced; by designing the specific included angle between the skeleton and the neck of the vibrating diaphragm, the vibrating diaphragm assembly with the integrated skeleton is ensured to be smooth and accurate in signal transmission motion in a magnetic circuit. According to the structure, many performance and reliability bottlenecks caused by difficult material forming and a bonding process in a traditional design are fundamentally overcome, and the power bearing capacity, the acoustic performance and the long-term stability of the loudspeaker are remarkably improved.

The disclosed subject matter relates to systems and methods for trapping single atoms and molecules using metasurface-generated optical tweezer arrays. A metasurface, comprising a plurality of subwavelength-spaced pixels fabricated from dielectric materials, is configured to generate an optical tweezer array from an incident laser beam in which particles are trapped. The metasurface enables the creation of highly uniform and scalable tweezer arrays with arbitrary geometries, dimensionalities, and trap spacings, supporting array sizes exceeding 10,000 traps. The compact, robust design and high power-handling capabilities of the metasurface facilitate direct trapping of ultracold particles, such as strontium atoms, with a vacuum chamber, and allow for field-deployable quantum devices. The disclosed approach achieves high uniformity in trap intensity and position, enabling advanced quantum applications.

This invention discloses a frequency converter circuit structure and its fabrication method for a double-sided integrated Schottky diode, relating to the field of terahertz high-frequency devices and integrated circuit fabrication technology. The structure includes a first Schottky die, a second Schottky die, and a suspended microstrip metal circuit layer. Both dies have a front side that forms a Schottky junction. The first Schottky die is positioned with the suspended microstrip metal circuit layer attached to its first back side, and the second Schottky die is positioned with the suspended microstrip metal circuit layer attached to its second back side. The two dies are mirror-symmetrical about the suspended microstrip metal circuit layer. This allows for a "back-to-back" stacking of the two Schottky dies through three-dimensional integration, increasing the number of Schottky junctions without significantly increasing the two-dimensional area of ​​the circuit. This effectively improves the power handling capability and integration density of the frequency converter circuit, while optimizing energy coupling efficiency, making it particularly suitable for high-power frequency doubling sources in the terahertz band.

A polarizer design combines many ideal qualities of crystalline polarizers and many ideal qualities of beam splitting cubic polarizers manufactured with high power processing glass and thin film coating manufacturing processes. That is to say, the design has a wide optical bandwidth (delta lambda / lambda gt; 0.1) to achieve a high extinction ratio (gt; 100000: 1 Tp / Ts), with high power and pulse energy processing, and all four input / output ports are high optical quality surfaces (different from many crystalline polarizers), high transmissivity (Tpgt; 98%) and low and low bulk material dispersion (group velocity dispersion at 500, 1000 and 1500 nm, respectively, is 72, 21 and-22 fs2 / mm) in the film.

The application provides a radio frequency switch structure and a preparation method thereof. The radio frequency switch structure comprises: an SOI substrate; a transistor chain arranged on the front surface of the SOI substrate, which comprises first to Nth transistors cascaded between a head end and a tail end, the head end is connected to a radio frequency input, the tail end is grounded, and N is an integer greater than or equal to 4; a dielectric layer covering the SOI substrate and the transistor chain; first to Nth conductive ground layers arranged on the dielectric layer or the back surface of the SOI substrate, the first to Nth conductive ground layers correspond to the front surface or the back surface of the first to Nth transistors respectively, and the areas of the first to Nth conductive ground layers exposed to the front surface or the back surface of the corresponding transistors increase successively. The application can balance the voltage distribution of each transistor on the radio frequency switch structure to improve the power handling capability of the radio frequency switch structure.