33 results about "Power handling" patented technology

A device useful as a switch including an input waveguide coupled to an output waveguide; a first diode circuit integrated with the input waveguide at a first termination; a second diode circuit integrated with the output waveguide at a second termination; and wherein the biasing the diode circuits switches the switch between an off state and an on state and achieves high isolation in the off state by absorbing input power in, reflecting the input power from, and frequency multiplying the input power using the diodes in the diodes circuits when the input power is received from the input waveguide. In one embodiment, the switch is a tunable, solid-state SPST switch for Gband radar applications.

This utility model discloses a sound-generating device and electronic device, relating to the field of electroacoustic transduction technology. The sound-generating device includes a mounting component, a magnetic circuit system, a vibration system, and a rear cover. The mounting component has a first end and a second end connected together, and a mounting cavity is formed within the mounting component. The magnetic circuit system is disposed within the mounting cavity and has a magnetic gap. The vibration system includes a diaphragm and a voice coil connected to the diaphragm. The periphery of the diaphragm is connected to the first end and is opposite to and spaced from the magnetic circuit system. A first rear cavity communicating with the magnetic gap is formed between the diaphragm and the magnetic circuit system. The end of the voice coil furthest from the diaphragm is suspended within the magnetic gap. The rear cover is connected to the second end and is opposite to and spaced from the magnetic circuit system. A second rear cavity is formed between the rear cover and the magnetic circuit system. A ventilation channel communicating with the first and second rear cavities is formed between the mounting component and the magnetic circuit system. This utility model's sound-generating device effectively reduces the product's F0 (Fever), improves the product's power handling capacity, and enhances acoustic performance.

This invention provides an automatic tuner for a loop antenna used in shortwave communication, belonging to the field of shortwave communication technology. This tuner aims to solve the problems of existing automatic tuners for loop antennas, such as difficulty in balancing versatility and high power performance, and poor high-voltage withstand capability. The tuner includes: a matching circuit, which includes couplers for shunting forward and reverse radio frequency signals; a tuning actuator, which includes an oil-immersed variable capacitor and a drive mechanism; and a main control circuit. Based on the signal shunted by the coupler, the main control circuit autonomously calculates the standing wave ratio (VSWR) and generates a control signal to control the matching circuit and tuning actuator independently of the radio transceiver, thus completing automatic tuning. This invention improves voltage withstand and power handling capability by using an oil-immersed variable capacitor, and achieves universal tuning through the autonomous control of the main control circuit, overcoming the shortcomings of existing technologies and offering the advantages of high power, high reliability, and strong versatility.

High power monolithic microwave integrated circuit (MMIC) differential single pole double throw switches utilizing a series of transistors formed by a gallium nitride (GaN) foundry process. The differential switches of the present disclosure allow for larger power handling capability and wideband operation while further providing differential amplitude and phase matching.

This invention provides a cavity-enhanced germanium-silicon photodetector based on silicon corner mirrors, comprising a silicon substrate layer, a germanium absorption region on the silicon substrate layer, and silicon corner mirrors located on the front and rear sides of the germanium absorption region; a germanium via layer is provided above the germanium absorption region, the via layer having a plurality of germanium vias, and a signal electrode is provided at the top of the germanium via layer; silicon via layers are provided on the left and right sides of the germanium absorption region, the silicon via layers having a plurality of silicon vias, and a ground electrode is provided at the top of the silicon via layers; two silicon nitride waveguides are arranged opposite each other, extending from the opposite outer sides of the two silicon via layers toward the sides of the germanium absorption region. The technical solution of this invention has excellent high-power processing capability, achieves polarization-insensitive detection, effectively overcomes the contradiction between responsivity and bandwidth, is fully compatible with CMOS manufacturing processes, and is conducive to large-scale integration and mass production.

Wafer-bonded inductors, transformers, and related electronic components can be used in power electronics and provide low conduction loss in the MHz-GHz frequency range. The wafer bonding fabrication process and its thermal requirements offer relatively simple and low cost manufacturing. The resulting devices offer a unique combination of high power handling at high frequencies and small form factor.

A USB-C to MoCA converter includes a USB-C interface for receiving and transmitting USB-C power and data, a MoCA interface handling the reception and transmission of USB-C power and data. A MoCA data / power handling converter is configurated to manage MoCA power and data in both directions. A USB / MoCA data converter is coupled between USB-C interface and MoCA interface to determine the communication protocol and to process incoming USB-C data signals into MoCA data formats and vice versa. A power converter is coupled between USB-C interface and MoCA interface to convert USB-C voltage of the USB-C power to fit MoCA voltage. A USB-C power delivery controller is connected between USB-C interface and the power converter to power a device connected to MoCA interface. The USB-C to MoCA converter enables data and power exchange between USB-C and MoCA interfaces for promoting compatibility and smooth operation.

The invention relates to an elastic wave device which comprises a supporting substrate, a piezoelectric layer and an IDT electrode. An IDT electrode formed on the main surface of the piezoelectric layer and configured to excite an elastic wave having a wavelength of lambda; the piezoelectric layer is laminated on the supporting substrate; wherein the supporting substrate is made of metal, and the metal material needs to meet the relational expression: wherein, E is the material density, and E is the material Young modulus and Poisson's ratio. By adopting the metal material meeting the relational expression as the supporting substrate, on one hand, the heat dissipation capability of the substrate can be remarkably improved, and the power endurance capability of the device is improved; on the other hand, the metal meeting the relational expression has high acoustic impedance, and the Q value can be improved.

The invention discloses a surface treatment method of a high-specific-gravity tungsten alloy, which comprises the following steps: firstly, carrying out plasma treatment on the high-specific-gravity tungsten alloy for 10-15 minutes at the treatment power of 350-400 W, and after the treatment is finished, preheating for 1 hour at the temperature of 60-65 DEG C to obtain the preheated high-specific-gravity tungsten alloy; preparing a modified liquid: adding 1-3 parts of a silane coupling agent KH550, 2-4 parts of a sodium stearate agent and 3-5 parts of a modified additive into 5-8 parts of a chitosan solution, and fully stirring to obtain the modified liquid. According to surface treatment of the high-specific-gravity tungsten alloy, the high-specific-gravity tungsten alloy is subjected to plasma treatment and then subjected to ultrasonic modification treatment through a modification solution, a sodium stearate agent in the modification solution is matched with a modification additive and a silane coupling agent KH550, and the acid corrosion resistance stability of a high-specific-gravity tungsten alloy product is optimized through blending and synergistic effects of the raw materials; the acid corrosion stability under different concentration conditions is optimized.

An acoustic resonator (100) provides high-voltage electrical coupling and exhibits improved power handling characteristics and Q factor at the resonant frequency. The acoustic resonator (100) includes an interdigital transducer (IDT) (102) formed on a piezoelectric substrate (104). Each staggered finger electrode of the IDT (102) has a multilayer structure comprising a first layer (200) and a second layer (202), the second layer being disposed above the first layer (200) and separated from the first layer (200) by one or more bases (204). The thickness and width of the first layer (200), the second layer (202), and the one or more bases (204) are defined based on the wavelength of the sound wave to be generated by the IDT (102) at the resonant frequency of the acoustic resonator (100). The thickness of the first layer (200) is less than the thickness of each of the one or more bases (204) and the second layer (202), and the width of the one or more bases (204) is less than the width of each of the first layer (200) and the second layer (202).

The application discloses a system and a control method for improving the transient power bearing capacity of a slow-start circuit MOSFET, and the method comprises the following steps: step 1) coupling two opposite surfaces of an active cooling device to the surface of a MOS power device and the surface of a power supply system heat dissipation device respectively; step 2) after detecting a starting signal, applying a current pulse of a predetermined length to the active cooling device before the slow-start operation starts, so that the active cooling material generates a refrigeration effect and reduces the junction temperature of the MOS power device by a predetermined temperature value; step 3) performing the slow-start operation when the MOS power device is in a low-temperature state; and step 4) turning off the active cooling device after the MOS power device completes the slow-start operation. The system comprises the active cooling device and a control circuit. According to the inverse calculation of the transient thermal resistance, the transient power loss bearing capacity of the device can be improved by about 1 times by reducing the junction temperature of the MOS device by 30-60 degrees Celsius in advance.

This invention belongs to the field of microwave passive device technology, and relates to a P-band eight-layer ferrite parallel water-cooled ultra-high power Y-junction circulator, including a waveguide Y-junction three-way cavity, a four-layer copper folded water-cooling plate, etc.; it adopts a comprehensive technical solution such as a full-height waveguide Y-junction cavity and symmetrical loading of eight-layer ferrite sheets, which significantly improves the peak power handling capacity, enabling forward peak power transmission of not less than 3MW; the average power capacity is greatly improved, meeting the requirements for long-term continuous high-power stable operation; the heat dissipation uniformity is excellent, suppressing device performance drift; the RF transmission performance is excellent, achieving stable RF transmission characteristics; the temperature stability and operational reliability are improved; the adaptability to extreme conditions is strong; and the structure is compact, with excellent integration, possessing superior system integration and engineering applicability.

1. The name of the design product: power control device and its main body. 2. The use of the design product: power control device and power control device main body for controlling propeller. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: design 1 perspective view. 5. Design 1 is designated as the basic design. 6. Other circumstances that need to be explained: the dotted line in the figure represents the unclaimed part of the design, indicating the partial appearance.

The loudspeaker voice coil diaphragm structure provided by the invention has the characteristics that the diaphragm is laminated after being formed in a split manner, and the voice coil framework and the diaphragm are integrally formed, and the complete diaphragm is decomposed into at least two separated diaphragms for forming, so that the requirement on the ductility of a single material is effectively reduced, the process problem of large-angle stretching is avoided, and the production efficiency is improved. A reinforcing structure is naturally formed at the fitting part; the voice coil framework and the vibrating diaphragm body are integrally formed, so that a glue bonding interface is eliminated, the connection reliability and the structural strength are improved, and the vibration quality is reduced; by designing the specific included angle between the skeleton and the neck of the vibrating diaphragm, the vibrating diaphragm assembly with the integrated skeleton is ensured to be smooth and accurate in signal transmission motion in a magnetic circuit. According to the structure, many performance and reliability bottlenecks caused by difficult material forming and a bonding process in a traditional design are fundamentally overcome, and the power bearing capacity, the acoustic performance and the long-term stability of the loudspeaker are remarkably improved.

The disclosed subject matter relates to systems and methods for trapping single atoms and molecules using metasurface-generated optical tweezer arrays. A metasurface, comprising a plurality of subwavelength-spaced pixels fabricated from dielectric materials, is configured to generate an optical tweezer array from an incident laser beam in which particles are trapped. The metasurface enables the creation of highly uniform and scalable tweezer arrays with arbitrary geometries, dimensionalities, and trap spacings, supporting array sizes exceeding 10,000 traps. The compact, robust design and high power-handling capabilities of the metasurface facilitate direct trapping of ultracold particles, such as strontium atoms, with a vacuum chamber, and allow for field-deployable quantum devices. The disclosed approach achieves high uniformity in trap intensity and position, enabling advanced quantum applications.

This invention discloses a frequency converter circuit structure and its fabrication method for a double-sided integrated Schottky diode, relating to the field of terahertz high-frequency devices and integrated circuit fabrication technology. The structure includes a first Schottky die, a second Schottky die, and a suspended microstrip metal circuit layer. Both dies have a front side that forms a Schottky junction. The first Schottky die is positioned with the suspended microstrip metal circuit layer attached to its first back side, and the second Schottky die is positioned with the suspended microstrip metal circuit layer attached to its second back side. The two dies are mirror-symmetrical about the suspended microstrip metal circuit layer. This allows for a "back-to-back" stacking of the two Schottky dies through three-dimensional integration, increasing the number of Schottky junctions without significantly increasing the two-dimensional area of ​​the circuit. This effectively improves the power handling capability and integration density of the frequency converter circuit, while optimizing energy coupling efficiency, making it particularly suitable for high-power frequency doubling sources in the terahertz band.

The present invention provides elastic wave devices, filters, and multiplexers capable of improving power handling. [Solution] The elastic wave device comprises a piezoelectric layer 15, a first layer 31 provided on the piezoelectric layer 15 which is a titanium aluminum nitride layer, a chromium aluminum nitride layer, a chromium nitride layer, a diamond-like carbon layer, or a titanium carbide nitride layer, and a second layer 32 provided on the first layer 31 which is a metal layer formed of a metal with a lower electrical resistivity than the first layer 31, and includes a pair of comb-shaped electrodes 22 including electrode fingers 23.

The invention discloses a miniaturized kilowatt-level optical isolator based on an innovative magnetic circuit, and relates to the field of passive optical devices. The isolator comprises a first collimator, a second collimator, a first polarizing beam splitter, a second polarizing beam splitter, a third polarizing beam splitter, a fourth polarizing beam splitter, a first optical rotation assembly, a second optical rotation assembly, a first light absorption device, a second light absorption device and a shell. Aiming at a thermally induced birefringence compensation scheme adopting double magneto-optical crystals and a quartz optical rotation sheet, the core of the invention lies in innovation of a permanent magnet structure in an optical rotation assembly: two discrete magnetic field peak regions are constructed on an optical axis by adopting a multi-ring nesting and specific magnetizing design. On the basis, a magnetic field strategy distributed according to needs is provided, the two magneto-optical crystals are arranged at the peak value of the magnetic field to enhance the Faraday effect, and meanwhile the quartz optical rotation piece is made to avoid the middle area. The design is different from a traditional uniform field scheme, and by means of accurate distribution of magnetic energy, device miniaturization and magnetic energy efficiency improvement are achieved while high isolation and kilowatt-level power bearing are guaranteed.

This invention discloses a ventilation device for a ceiling loudspeaker and its usage method, relating to the field of ceiling loudspeaker technology. It includes a ceiling panel, a speaker body, a mounting groove, a mating groove, and a connecting hole. The ceiling panel is fitted onto the surface of the speaker body, the mounting groove is formed within the inner cavity of the speaker body, the mating groove is formed within the inner cavity of the speaker body, and the connecting hole is formed at the bottom of the mating groove. By incorporating an auxiliary cleaning component, an annular groove, an auxiliary positioning component, a connecting pipe, an anti-detachment hole, an anti-detachment plate, a rotating rod, and a linked fan, the invention solves the problem that during operation, the voice coil, magnet, power amplifier circuit, crossover capacitor, and inductor of a ceiling loudspeaker continuously generate heat. Without proper ventilation and heat dissipation, this heat cannot be quickly dissipated, leading to excessively high voice coil temperatures, insulation aging, and magnet performance degradation. This directly results in decreased sensitivity, increased distortion, reduced power handling capacity, and even unit burnout. The invention achieves the desired ventilation and heat dissipation effect.

The invention provides a surface acoustic wave resonator based on a quartz film. The surface acoustic wave resonator comprises a high-resistance silicon substrate, a sound wave reflecting layer, a single crystal quartz film, an interdigital transducer and a reflecting grating, wherein the high-resistance silicon substrate is used for realizing mechanical support of the resonator; the sound wave reflecting layer is made of silicon dioxide and is used for providing temporary support and a leveling substrate for the upper-layer single crystal quartz film; and constructing a specific acoustic structure; blocking atomic diffusion and charge migration between the layers; the single crystal quartz film is a piezoelectric waveguide layer; the interdigital transducer is used for realizing acoustic-electric energy conversion; the reflecting grating and the interdigital transducer form a Fabry-Perot resonant cavity, and by means of the resonator, the core defects that a traditional lithium niobate-based SAW resonator is low in Q value, poor in temperature stability, weak in power processing capacity, poor in process compatibility, insufficient in phase noise and the like are overcome.

The invention discloses an energy storage module with precise voltage regulation and constant current, and belongs to the technical field of power electronics and energy storage. The module comprises an energy storage device module and a modulation protection module. According to the modulation protection module, linear voltage regulation of a semiconductor switching device and forward voltage drop of a diode are connected in series to form a hybrid modulation circuit, and continuous and dynamic control over the output voltage and the charging current of the energy storage module is jointly achieved. According to the invention, the problem that the existing battery module can only realize on-off control and cannot realize efficient and accurate voltage regulation and constant current is solved, the power processing capability and the system reliability are remarkably improved, and the system can be widely applied to aviation ground power supplies, airborne storage batteries and occasions requiring power buffering.

The present application relates to a kind of intelligent handling trolley for electric power, it is characterized in that: including track walking mechanism, support plate and hoisting mechanism, the left and right ends of the support plate each is equipped with one track walking mechanism, it is characterized in that: the top of the support plate is provided with large cargo platform, the large cargo platform is connected on support plate by two-way leveling mechanism, the periphery of the large cargo platform is provided with surrounding block component, the top of the large cargo platform is double-layered ladder structure, wherein the ladder plane in lower layer is storage area, the ladder plane in upper layer is installation area, the hoisting mechanism is connected on installation area, the two-way leveling mechanism is by Y direction adjusting component and X direction adjusting component, the large cargo platform is connected by Y direction adjusting component with support plate, the X direction adjusting component is installed on support plate and it is connected by Y direction adjusting component with large cargo platform.The design has the advantages of simple structure, easy to manufacture and practical high efficiency.

The invention discloses a high-power radio frequency circulator based on a silicon-based CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process. The circulator comprises a transmission network consisting of a gyrator and lumped parameter LC elements, the gyrator includes a first pair of switches, a second pair of switches, and a lambda / 4 transmission line connected therebetween. The first switch pair is connected between the transmitting end and the lambda / 4 transmission line, the second switch pair is connected between the lambda / 4 transmission line and the antenna end, and the two groups of switch pairs are respectively controlled by complementary non-overlapped local oscillation signals, so that directional transmission of the signals in the circulator and isolation between ports are realized. A switched capacitor clock booster circuit is further integrated, three times of voltage swing is realized on the premise of not increasing the power supply voltage, the power processing capacity of the transistor switch is remarkably improved, and meanwhile, the system power consumption is reduced. Besides, an LC lumped structure is adopted to replace a distributed transmission line, so that the chip area is greatly reduced, the integration level is improved, and the antenna is suitable for high-power and high-integration-level radio frequency front-end application in a full-duplex communication system.

The utility model discloses a broadband band-pass filter capable of improving right-end suppression. The filter comprises a cavity and a cover plate, wherein the cover plate is fixedly arranged on the cavity; a plurality of resonators are fixedly installed in the cavity, and two dumbbell-shaped flying rods and two protruding connecting ends are further installed in the cavity. A plurality of frequency tuning assemblies, a plurality of main coupling tuning assemblies and four cross coupling tuning assemblies are mounted on the cover plate, each frequency tuning assembly is electrically connected with each resonator, and two cross coupling tuning assemblies are electrically connected with two dumbbell-shaped flying rods; and the other two cross coupling tuning assemblies are loaded with coiled screw fly rods and are electrically connected with the two connecting ends respectively. According to the broadband band-pass filter for improving right-end suppression, the advantages of a common dumbbell-shaped flying rod and a metal belt disc screw flying rod are combined together, left-end high suppression is met, high-end resonance suppression can be improved, the size and insertion loss are small, and the bearing power is large.

The invention provides a photovoltaic power generation module and a photovoltaic power generation system, the photovoltaic power generation module comprises a laminated photovoltaic assembly, a differential power processing circuit and a DC conversion circuit, the laminated photovoltaic assembly comprises a first battery assembly and a second battery assembly which are laminated, one of the first battery assembly and the second battery assembly is a wide-band-gap battery assembly, and the other one is a narrow-band-gap battery assembly. The first battery assembly and the second battery assembly are connected in series and then connected with the differential power processing circuit, and the differential power processing circuit is connected with the direct current conversion circuit. The differential power processing circuit processes output current deviation or output voltage deviation of the first battery assembly and the second battery assembly, and the direct current conversion circuit carries out MPPT on the laminated photovoltaic assembly. On the basis that the first battery assembly and the second battery assembly are not transformed, the differential power processing circuit and the direct current conversion circuit are adopted to achieve matching adjustment of the output power of the first battery assembly and the output power of the second battery assembly respectively, and the system adaptability of the laminated photovoltaic assembly can be improved.

This invention relates to the field of microelectronics and MEMS manufacturing technology, and in particular to a bulk acoustic wave resonator with a double-layer piezoelectric film and its fabrication method. This method utilizes a first and a second piezoelectric layer deposited on either side of a central electrode layer to form a heterogeneous integrated key structure, overcoming the physical and technological limitations of single-layer piezoelectric thin film FBARs. This results in improved bandwidth at higher frequencies. The tuning of the central electrode layer, combined with back-side through-silicon vias, eliminates wire bonding inductance on the front side, ensuring low-loss characteristics of the filter at high frequencies. Integrated heat dissipation packaging effectively suppresses self-heating issues under high bandwidth and high power, improving power handling capability. This method is compatible with CMOS processes and can be directly embedded into existing production lines. This allows the double-layer piezoelectric film bulk acoustic wave resonator to effectively cover frequencies above 3GHz while further reducing its size, solving the problem that single-layer piezoelectric films and their supporting processes cannot meet the requirements of next-generation RF front-ends for high frequency, high bandwidth, high power, and wafer-level packaging.

The disclosure provides a design of integrating a ferrite-based circulator within the surface mount device (SMD) package for an RF front-end module. The ferrite-based circulator serves as a duplexer. The front-end module contains all relevant transmitting / receiving (T / R) functions within a small footprint having significant power handling. The disclosed front-end module can be interfaced with Analog-to-Digital and Digital-to-Analog converters.

This invention discloses a reflective high-power repolarization and phase-modulation metasurface unit based on PIN diodes, belonging to the field of reconfigurable intelligent metasurface technology. The unit adopts a ten-layer stacked structure, comprising, from top to bottom: a first dielectric layer, an impedance matching layer, a second dielectric layer, a pad layer, a PP layer, a functional layer, a third dielectric layer, a ground layer, a fourth dielectric layer, and a feed network layer. By optimizing the impedance matching layer (etching periodic grooves on a metal annular plate), designing a PP layer with a cavity to protect the PIN diodes, and employing a parallel-shunt, pairwise reverse-connection method for the PIN diodes in the functional layer, the local electric field enhancement within the unit is effectively suppressed, improving the device's power handling capability. This invention does not rely on special insulating gases, effectively improving the unit's power carrying capacity, achieving stable repolarization and phase modulation functions at 8.5 GHz, and increasing the unit's power capacity in an air environment to 35 kW, thus meeting the application requirements of high-power microwave systems.

The invention discloses a preparation method of an intelligent vehicle circuit board based on vision, and relates to the technical field of intelligent driving. The method comprises the following steps that 1, a base material is pretreated, specifically, a high-Tg halogen-free FR-4 base material with the thickness of 1.6 mm and the surface gold immersion layer thickness of 10 micrometers is selected, surface treatment is conducted through a plasma cleaning technology, the cleaning power is 300 W, the treatment time is 15 s, and the water contact angle of the surface of the base material is smaller than or equal to 30 degrees; step 2, manufacturing a circuit pattern, adopting an LDI laser direct imaging technology to carry out circuit exposure, enabling the line width and the line distance to be 0.1 mm / 0.1 mm and the positioning precision to be + / -0.01 mm, and adopting an acidic copper chloride etching solution to carry out etching at 45 + / -2 DEG C and the etching speed to be 1.2 mu m / min; according to the invention, through integrated wiring design and special interface integration, visual perception, data processing and vehicle control are highly integrated on a single board, and a special visual processing unit is combined, so that the multi-channel visual data processing delay can be reduced to be less than 50ms, such as 42ms in the embodiment, and the real-time response capability of an intelligent driving system is greatly improved.

The invention provides a transistor preparation method and an array buried trench diamond field effect transistor, and relates to the technical field of semiconductor preparation. The method comprises the steps that an intrinsic diamond epitaxial layer grows on a target diamond substrate, N heavily-doped regions are prepared on the intrinsic diamond epitaxial layer, an array arrangement structure is formed, each heavily-doped region comprises a source electrode heavily-doped region and a drain electrode heavily-doped region, and a conductive channel layer is formed by every two adjacent heavily-doped regions; growing a transfer doping layer on the array arrangement structure, and removing the transfer doping layer on the N heavily doped regions and all the conductive channel layers; growing a diamond epitaxial dielectric layer on the target diamond substrate, and removing the diamond epitaxial dielectric layer outside the transfer doping layer; and respectively preparing a source electrode and a drain electrode on each source electrode heavily doped region and each drain electrode heavily doped region, and depositing a gate electrode on the diamond epitaxial dielectric layer to complete preparation of the array buried trench diamond field effect transistor. The power processing capability of the device can be improved.