210 results about "Power handling" patented technology

A silicon-on-insulator (SOI) RF switch adapted for improved power handling capability using a reduced number of transistors is described. In one embodiment, an RF switch includes pairs of switching and shunting stacked transistor groupings to selectively couple RF signals between a plurality of input / output nodes and a common RF node. The switching and shunting stacked transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. In one embodiment, the transistor groupings are “symmetrically” stacked in the RF switch (i.e., the transistor groupings all comprise an identical number of transistors). In another embodiment, the transistor groupings are “asymmetrically” stacked in the RF switch (i.e., at least one transistor grouping comprises a number of transistors that is unequal to the number of transistors comprising at least one other transistor grouping). The stacked configuration of the transistor groupings enable the RF switch to withstand RF signals of varying and increased power levels. The asymmetrically stacked transistor grouping RF switch facilitates area-efficient implementation of the RF switch in an integrated circuit. Maximum input and output signal power levels can be withstood using a reduced number of stacked transistors.

Receivers, which may be external or implantable, are provided. Aspects of receivers of the invention include the presence of one or more of: a high power-low power module; an intermediary module; a power supply module configured to activate and deactivate one or more power supplies to a high power processing block; a serial peripheral interface bus connecting master and slave blocks; and a multi-purpose connector. Receivers of the invention may be configured to receive a conductively transmitted signal. Also provided are systems that include the receivers, as well as methods of using the same. Additionally systems and methods are disclosed for using a receiver for coordinating with dosage delivery systems.

A three dimensional waveguide is integrated with a MEMS structure to control a signal in various RF components. The components include switches, variable capacitors, filters and phase shifters. A controller controls movement of the MEMS structure to control a signal within the component. A method of construction and a method of operation of the component are described. The switches have high power handling capability and can be operated at high frequencies. By integrating a three dimensional waveguide with a MEMS structure, the components can be small in size with good operating characteristics.

A modular, compact and widely tunable laser system for the efficient generation of high peak and high average power ultrashort pulses. Modularity is ensured by the implementation of interchangeable amplifier components. System compactness is ensured by employing efficient fiber amplifiers, directly or indirectly pumped by diode lasers. Peak power handling capability of the fiber amplifiers is expanded by using optimized pulse shapes, as well as dispersively broadened pulses. Dispersive broadening is introduced by dispersive pulse stretching in the presence of self-phase modulation and gain, resulting in the formation of high-power parabolic pulses. In addition, dispersive broadening is also introduced by simple fiber delay lines or chirped fiber gratings, resulting in a further increase of the energy handling ability of the fiber amplifiers. The phase of the pulses in the dispersive delay line is controlled to quartic order by the use of fibers with varying amounts of waveguide dispersion or by controlling the chirp of the fiber gratings. After amplification, the dispersively stretched pulses can be re-compressed to nearly their bandwidth limit by the implementation of another set of dispersive delay lines. To ensure a wide tunability of the whole system, Raman-shifting of the compact sources of ultrashort pulses in conjunction with frequency-conversion in nonlinear optical crystals can be implemented, or an Anti-Stokes fiber in conjunction with fiber amplifiers and Raman-shifters are used. A particularly compact implementation of the whole system uses fiber oscillators in conjunction with fiber amplifiers. Additionally, long, distributed, positive dispersion optical amplifiers are used to improve transmission characteristics of an optical communication system. Finally, an optical communication system utilizes a Raman amplifier fiber pumped by a train of Raman-shifted, wavelength-tunable pump pulses, to thereby amplify an optical signal which counterpropogates within the Raman amplifier fiber with respect to the pump pulses.

A high performance single-pole-double-throw (SPDT) Transmitter / Receiver (T / R) FET switch utilizes a plurality of multi-gate FETs in series to realize low insertion loss, low harmonic distortion and high power handling capabilities. The SPDT switch consists of an antenna port, a transmitter branch coupled to a transmitter port through a plurality of multi-gate FETs in series and a receiver branch coupled to a receiver port through a plurality of multi-gate FETs in series. When a high power signal passes from the transmitter port to the antenna port through the transmitter branch, the receiver branch is required to be shut off electrically to prevent the high power signal from leaking to receiver port. This leakage can degrade the isolation of the switch and cause harmonic distortion. Furthermore, the transmitter branch is required to provide a resistance as small as possible to reduce the power loss when it passes through the transmitter branch to the antenna port. In the receiver branch, two of the gate metals in the multi-gate FETs are fabricated with gate sizes several times larger than the others. Furthermore, a heavily doped cap layer is utilized between the gate fingers in a multi-gate FET to reduce the channel resistance of FET, thereby lowering the insertion loss.

An electronically tuned, absorptive, low-loss notch filter with high RF power handling capability is obtained using a four-port quadrature hybrid coupler connected to a matched pair of band pass resonator devices and resistive terminations. The notch filter design uses series-only tuning elements for the band pass resonator devices to raise the RF power handling of the band pass resonators far above conventional techniques while also being tunable at high speeds. The notch filter architecture and method can be used for interference cancellation in a wide range of wireless technologies, such as cellular phone, wireless routers, hand-held radios, satellite communications, and any other environments where there are a number of wireless technologies in close signal proximity.